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Wireless Bipolar Power Transistor, 15W
1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor
Designed for Linear Amplifier Applications
Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP
Class A: +48 dBm Typ 3rd Order lnrercept Point .
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Gold Metallization System
.
PH1819-15N
v2.00
Power Gain
Collector Efficiency
Input Return Loss RL 10 - dB
Load Mismatch Tolerance
3rd Order IMD
GP
I
%
VSWR-T -
IMD, -
7.0 - dB
I
25 - %
1O:l -
-30 dBc
Typical Optimum Device Impedances
FWW
1780
1850
1880
1880
1900
Z,(Q)
lOStjl2.3 l.S-il.9
11.4+jll
11.9+j6.2
9.9 + j3.6 1.6 - j2.7
8.8+j1.9
LCSQ)
1.6 - j2.2
1.6 - j2.5
1.4 -j2.7
1
I’,,=26 V, I,,=25 mA, P,,,$5 W PEP, F=1880 MHz. AF=lOO kHz
V,,=26 V. I,,=25 mA, P,,.,=15 W PEP, F=1880 MHZ, AF=lOO kHz
V,,=26 V, I,,=25 mA, Pour
V,,=26 V, I,,=25 mA, P,,$5 W PEP, F=1880 MHZ, AF=lOO id-k
V,,=26 V, Ico=25 mA, Poe15 W PEP, F=1880 MHz, ~F=100 Cl.?
iNPllT
NZTWO=X
-I 5 W PEP, F=l880 MHz, AF=lOO kHz
- 2 343
-
-q-
ZiN i
JUTPLIT
NCTW3RK
Wireless Bipolar Power Transistor, 15W
RF Test Fixture
PHI 819-I 5N
v2.00
. .
INPUT
50 OHMS
Rl
GD
Q Q
“cc
c3
I I
1
OUTPUT
50 OHMS
Cl c4
c2
c3
C5
CR1
Ll
01
Rl
RLl
BOARD TYPE
ARTWORK DIMENSIONS IN MILS
PAR-l-S LIST
2OpF ATC SIZE A CAPACITOR
2,2pF ATC SIZE A CAPACITOR
5000pF CHIP CAPACITOR
50 VOLT 50uF ELECTROLYTIC CAPACITOR
lN5417 DIODE
10 TURNS OF ND. 22 AWG ON J25' DIA
PH1819-15N
487 IIHM l/4 WATT RESISTOR
13 TURNS OF NO, 26 AWG ON 3 OHM
l/4 WATT RESISTOR
ROGERS 6OlOt5 ,025' THICK, ER = lOe5
Wireless Bipolar Power Transistor, 15W
Typical Broadband Performance Curves
PH1819-15N
v2.00
5 7
s
6
12 [
10
GAIN-EFFICIENCY vs FREQUENCY
PO,,.,=15 W PEP V,,=26 V I,,=25 mA
gj’”
6
-
.
6
5
-
4L -
1805
Gain
CW Efficiency
FREQUENCY (MHz)
-
1850
GAIN vs P,,
V,,=26 V Fld880.0 MHz F2=1880.1 MHz
I,=l.OA
-
7s
.so =
2Tone Efficiency 25
‘0
1660
I
OUTPUT POWER vs COLLECTOR VOLTAGE
I,,=25 mA Fld880.0 MHz F2~1880.1 MHz
1::
m
2
.-
0'
12
16
20
24
COLLECTOR VOLTAGE (V)
I
26
IMD vs P,,,
V,,=26 V ICo- -100 mA F1=1880.0 MHz F2=1880.1 MHz
-15
Class AB
2.7
25 27 29 31 33 35 37 39 41 43
P, WBm)
IMD vs P,,,
Vcc=2B V I,,=25 mA F1~1880.0 MHz F2=1880.1 MHz
-15
25
27 29 31 33
Class AB
35
P&PEP) in dBm
37
39 41 43 25
25
27 29
31 33
35 37
39 41
43
P&PEP) in dBm
IMD vs P,,
2.7
0
V,,=26 V I,,=l.O A F1=1880.0 MHz F2=1880.1 MHz
-15
27 29
Class A
33
31
35 37 39 41
P&PEP) in dBm
9
6
3
43
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