Page 1
an AMP comDanv
ZE r =
Wireless Bipolar Power Transistor, 30W
1.6 - 1.7 GHz
Features
l Designed for Linear Amplifier Applications
l -30 dBc Typ 3rd IMD at 30 Watts PEP
l Common Emitter Class AB Operation
l Internal Input Impedance Matching
l Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating
Collector-Base Voltage V
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
V
V
T
CSC
CES
EBD
‘c
pcl
?
STG
8
JC
60 V
60
3.0
10 A
109
200
-55 to +150
1.6
Electrical Characteristics at 25°C
Parameter Symbol Min Max Units
Collector-Emitter Breakdown Voltaae
~olle%-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltaae
DC Forward Current Gain
Power Gain
Collector Efficiencv
I Input Return Loss
Load Mismatch Tolerance VSWR-T -
3rd Order IMD ‘MD, -
BV,,, 60 -
I LFP I -
BV,,, 20 BV,,, 30 - V
BV,,, 3.0 - V
1 RL 1 10 1 - 1 dB 1 V-,=25 V, I,,=200 mA. P-,.,=30 W PEP, F=1.6, 1.65, 1.70GHz 1
Units
V
V
w
“C
“C
“CM,
) 4.0 1 mA 1 V,,=25V
15 120 - V,,=5 V, I,=2 A
10 - dB V,,=25 V, I,,=200 mA, P,,,=30 W PEP, F=l.6, 1.65,1.70 GHz
40 - %
3.0:1 -
-28 dBc V,,=25 V, I,,=020 mA, P,,,=30 W PEP, F=l650 MHz, 4F=lOO kHz
PHI 617-30
,400
<lO.l6)-
-I
.225?k010
(5.72i.25)
r
.225&O
(5.72i.25)
UNLESS OTHERWISE NOTED, TOLERANCES ARE cHILUHETERS tJ3nH,
Test Conditions
V
I,=40 mA
V
I,=40 mA
I,=40 mA, F&=220 R
I,=40 mA
VP,=25 V, I,,=200 mA, P,,,,=30 W PEP, F=l.6, 1.651.70 GHz
V,,=25 V, I,,=200 mA, P,,,=30 W PEP, F=l.6, 1.65, 1.70 GHz
It+CHES tO’J5’
I
Typical Optimum Device Impedances
F(GHz)
1.60 2.1 + j4.9
1.65 3.1 + j3.8 1.2 - j0.8
1.70 2.1 +j3.5 1.2 - j0.9
z,,w
Z,,m(~)
1.3-j0.7
FZ-
’ 04D
Page 2
Wireless Bipolar Power Transistor, 30W
RF Test Fixture
PH1617-30
v2.00
INPUT -t,G
50 OHMS cu 159
I
Rl 150
AU
cl
200
ARTWORK DIMENSIDNS IN MILS
PARTS
I-IS-l-
Cl c2 c3
c4
c5
C6
CR1
Ql
Rl
R2
Ll
BOARD TYPE: RDGERS 6010.5 25 MILS THICK, ER = 10.5
33 pF ATC SIZE A
6,8 UF 35 VDLTS CHIP
4,7 uF 35 VOLTS CHIP
50 UF 50 VOLTS
lN4245 DIODE
PH1617-30
5R l/4 WATT
2.2R l/8 WATT CHIP
10 T/NO. 24 AWG ON L/8’ DIAMETER
Page 3
Wireless Bipolar Power Transistor, 30W
Typical Broadband Performance Curves
PH1617-30
13
- 11
.z
co -
9
8
1.60
14 -
GAIN-EFFICIENCY vs FREQUENCY
P ouT=30 W V,,=25 V I,,=200 mA mA F=l650
-
. T
Efficiency
1.65
FREQUENCY (GHr)
GAIN vs PoUT
F=l650 MHz V,,=25 V F=l .O MHz
I,=300 mA
. 7s
z
.45- 3 .
3.5
25
1.70
OUTPUT POWER vs COLLECTOR VOLTAGE
40 .
0 -
12 14
I,,=200
16 18 20
COLLECTOR VOLTAGE (V)
MHz
22 24 26
C,, vs COLLECTOR VOLTAGE
,I
30
24
Specifications Subject to Change Without Notice.
34
28 32
P&PEP) in dBm P&PEP) in dBm
38 42 45
P
OUT
36 40 44
48
24 26
32 36
40 44 48
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