Page 1
Wireless Bipolar Power Transistor, 2W
1.6 - 1.7 GHz PH1617-2
Features
l Designed for Linear Amplifier Applications
l Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP
l Class A: +44 dBm Typ 3rd Order Intercept Point
l Common Emitter Configuration
l Internal Input Impedance Matching
l Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
Parameter
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage V
Collector Current
Power Dissipation
Junction Temperature
1 StorageTemperature
Thermal Resistance 6
( Symbol ( Rating
V
CBO
V
ES
EBO
‘c
PO
T,
I TSTG
JC
6.5
65
3.0
2.0
13.5
200
1 -55to+150 1 “C 1
13
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage BV,-, 65 - V
Collector-Emitter Leakage Current
Collector-EmitterBreakdownVoltage ( BV,,, ( 22 ( - 1 V 1
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
Symbol
‘ES
BV,,, 30 -
BVEBO
h
FE
GP
“rlC
RL
VSWR-T -
IMD, - -32 dBc
Units
V
V
V
I
A
W
“C
“CNV
UNLESS DTHERvIsE NOTED, TDLER*NCES ARE
Min Max Units Test Conditions
I,=5 mA
1.0 mA V,,=25 V
I,=5 mA
V
I,=5 mA, R,,=220Q
/
3.0 -
V
I,=5 mA
15 120 - V,,& V, I,=200 mA
10 - dB
35 10 - dB
I
5:l - V,,=25 V, I,,=25 mA, P,,e2.0 W, F=l.60,1.65, 1.70 GHr
V,,=25 V, lo=25 mA, Po,,=2.0 W, F=l.60,1.65.1.70 GHz
V,,=25 V, I,,=25 mA, P,,,=2.0 W, F=l.60, 1.65. 1.70 GHz
%
V,,=25 V, I,,=25 mA, P,,=2.0 W, F=l.60.1.65,1.70 GHz
V,,=25 V, I,,=25 mA, Po,=2.0 W, PEP F=l650 MHz. AF=lOO kHz
.0601003
(1.5.?%08)
v2.00
Typical Optimum Device Impedances
Page 2
Wireless Bipolar Power Transistor, 2W
RF Test Fixture
INPUT
50 OHMS
“cc
PH 1617-2
y2.00
cu OUTPUT
L
125cu50 OHMS
ARTWORK DIMENSIONS IN MILS
PAR-I-S
Cl c2 c3
c4
c5
CR1
Ql
Rl
RLl
BOARD
TYPE:
L-ISl-
33 pF ATC SIZE A
487 uF 35 “LILTS
50 UF 50 VOLTS
lN914B DIODE
PH1617-2
5R l/4 WATT
6T/NO, 24 AWG ON
ROGERS 6010,5 25
CHIP
39
MILS
1/4WATT
THICK, ER
= 10.5
Page 3
Wireless Bipolar Power Transistor, 2W
Typical Broadband Performance Curves
PH1617-2
v2.00
GAIN-EFFICIENCY vs FREQUENCY
P
15
-
OuT=2.0 W Vcc=25 V I,,=25
Gain
Eificiencv
11
10 .
-
1.60
1.65
FREQUENCY (GHz)
GAIN vs P,,,
16 -
F=l600 MHz I’,,=25 V
mA
- &- 3
-35
. 25
1.70
75
65
55 m
=
OUTPUT POWER vs COLLECTOR VOLTAGE
4
12
14 16 18
IO=25 mA F=l600 MHz
20 22
COLLECTOR VOLTAGE (V)
24
3RD ORDER IMD vs P,,,
-15
Fl =1600.0 MHz F2=1600.1 MHz Vcc=25 V
-30
26
28
1
I
9’
20
24
20
P,,,,, (dBm)
32
IMD vs POUT
~1=1600.0 MHz F2=1600.1 MHz Vcc=25 V I,,=25 mA
-15
24 28
MassAB
32
P,,(PEP) in dBm
36
36
0.9
0.6
455-
I
20
24
P&PEP) in dBm
26
32
36
IMD vs P,,
F14 600.0 MHZ F2=1600.1 MHz Vcc=25 V I,,=200 mA
-15
24
Class A
28 32
P&PEP) in dBm
0.9
36
Page 4
Wireless Bipolar Power Transistor, 2W
Typical S-Parameters
V,,=25 V,1,,=200 mA
PH1617-2
v2.00
WI
f(MHz)
100 1.10 171.5 23.80 120.3 0.012 - 7.4 0.32 -74.5
200 0.75 175.1 12.15 92.1 0.014 - 4.7 0.22 -89.6
300 0.79 -177.9 7.79 81.2 0.016 - 4.5 0.20 -95.7
400 0.84 -177.4 5.77 74.4 0.016 - 9.8 0.23 - 98.7
50d - 0.87 -178.5 4.65 68.4 0.017 - 3.7 0.26 -100.5
600 0.89 179.8 3.96 62.6 0.018 - 5.9 0.27 -101.4
700 0.89 178.3 3.49 56.7 0.018 - 0.7 0.29 -104.4
800 0.91 177.4 3.08 51.1 0.019 - 2.7 0.33 -103.3
900 0.91 175.4 2.89 45.4 0.017 - 3.4 0.36 -111.0
1000 0.91 174.1 2.74 38.9 0.019 - 0.9 0.40 -114.6
1100 0.89 171.5 2.64 28.9 0.024 - 6.1 0.46 -117.3
1200 0.87 171.7 2.45 22.8 0.024 - 13.6 0.53 -120.8
1300 0.86 170.8 2.35 15.7 0.023 - 18.3 0.57 -122.3
1400 0.86 170.3 2.32 7.6 0.026 - 21 .l 0.63 -145.5
1450 0.85 170.1 2.30 3.4 0.026 - 22.9 0.65 -126.2
1500 0.84 169.9 2.27 -1.2 0.025 - 22.3 0.66 -127.6
1550 0.83 169.7 2.26 -6.4 0.026 - 31.0 0.68 -129.1
1600 0.82 169.7 2.24 -11.5 0.630 - 37.3 0.71 -131.9
1650 0.82 170.0 2.22 -16.6 0.029 - 43.2 0.72 -133.6
1700 0.81 170.5 2.19 -22.4 0.027 - 48.5 0.73 -137.6
1750 0.80 171.1 2.14 -28.4 0.025 - 52.2 0.76 -140.1
1800 0.80 171.5 2.11 -35.5 0.026 - 60.2 0.76 -143.9
1850 0.80 171.9 2.05 -40.7 0.027 - 60.1 0.81 -147.5
1900 0.81 172.6 1.99 -47.4 0.024 - 67.1 0.81 -150.1
2000 0.82 173.6 1.83 -60.7 0.024 - 80.8 0.86 -155.5
2100 0.84 174.5 1.61 -74.0 0.020 - 94.0 0.88 -160.0
2200 0.88 174.2 1.40 -84.6 0.019 -104.7 0.87 -164.5
2300 0.90 173.6 1.21 -94.7 0.016 -128.7 0.86 -168.1
Mag Phase
s21
Mag Phase
s12
Mag Phase
s22
Mag Phase
Specifications Subject to Change Without Notice.
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