Datasheet PH1516-60 Datasheet (M A COM)

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company

Wireless Bipolar Power Transistor, 60W

1450 - 1550 MHz

Features

Designed for Linear Amplifier Applications
Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP
Class A: +53 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Marching

Diffused Emitter Ballasting

Absolute Maximum Ratings at 25°C

Parameter

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation

JunctionTemperature
Storage Temperature
Thermal Resistance

Symbol

V

cm

V

CES

V

Em

1,

P, ( 116 W
T,

T

srt

8

JC

Rating

65
65

3.0
10

200

-55 to +150

1.5

Units

] A

“C
“C

“CIW

PHI516160

‘f

.22st.010

C5.72t.25)

f

V
V
V

UNLESS OTHERWISE NOTED, TOLERANCES ARE <,,,ILUnETERS r,13M,,,>

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INCHES t.005

Electrical Characteristics at 25°C

Typical Optimum Device Impedances

F(MHr)

1450

1500

1550

Z,(Q)

2.2 + j5.0

2.7+j4.5

2.1 + j3.7

Wireless Bipolar Power Transistor, 60W

RF Test Fixture

PH1516-60

INPUT

50 OHMS

vB

“cc

CR1

ARTWORK DIMENSIONS IN MILS

GD

DUTPUT

50 OHMS

Cl c2 c3 c4
C5
C6

CR1
Ll
Ql
Rl

RLl

BUARD TYPE:

18pF ATC SIZE B CAPACITOR
5OOOpF CHIP CAPACITOR
50 VOLT 5OuF ELECTROLYTIC CAPACITOR
lN5417 DIODE
7 TURNS OF Nil. 22 AWG CIN ,125' DIA

PH1516-60

4.7 OHM l/2 WATT RESISTOR
10 TURNS OF ND 26 AWG IIN 3 OHM
l/4 WATT RESISTOR
ROGERS 601Os5 ,025" THICK, ER = 10.5

Wireless Bipolar Power Transistor, 60W

Typical Broadband Performance Curves

PH1516-60

v2.00

GAIN-EFFICIENCY vs FREQUENCY

11

7 -

6 -

1450

.

P,,=60 W PEP I’,,=26 V I,,=25 mA

CW Efficiency

2 Tone

Efficiency

s

1500

FREQUENCY (MHz)

UMIIY vs rouT

l500.0MHz Fl=lSOO.l MHz

3.5 A

Gain

- loo

. 60

- 60

.40--

- 20

1550

OUTPUT POWER vs COLLECTOR VOLTAGE

90

75 -

1,,=25mA F1=1500.0MHz

60

2

$?

0

z

+45 ­s

a

30

15

0

12

14 16

18 20

COLLECTOR VOLTAGE (V)

F2=1500.1 MHz

22 24 26

,r

28

IMD vs P,,

F1=1500.0 MHz F2=1500.1 MHz Vcc=26 V I,,=25 mA

-15

I

Mess AB

9

6

4'

30. 34

38 42

P,, VW

46 50

IMD vs P,,

F1=1500.0 MHz F2=1500.1 MHZ Vcc=26 V 1,,=200 mA

3rd

30 34

PaPEP in dBm2

46 50

J

20

34 38

P,,PEPin dBm

42 46

50

IMD vs P,,

F1=1500.0 MHz F2=1500.1 MHz V,,=20 V 1,,=3.5 A

Class A

30

33

%P,,PEP~B dBm 42 45

48