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Avionics Pulsed Power Transistor, 700 Watts,
PH1090-700B
1.03-1.09 GHz, 32 µS Pulse, 2% Duty
Features
Q Designed for Mode-S IFF Applications
Q NPN Silicon Microwave Power Transistor
Q Common Base Configuration
Q Broadband Class C Operation
Q High Efficiency Interdigitated Geometry
Q Gold Metalization System
Q Internal Input and Output Impedance Matching
Q Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings @ 25 °C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Dissipated Power
(Standard Pulse Cond.)
Dissipated Power
(Mode-S Pulse Train)
Storage Temperature
Junction Temperature
Symbol Rating Units
12/10/01
Rev. 0
V
CES
V
EBO
IC
P
TOT
P
TOT
T
STG
Tj
65 V
3.0 V
35 A
2.9 kW
700 W
-65 to +200 °C
200 °C
Broadband Test Fixture Impedances
TEST FIXTURE
INPUT
CIRCUIT
50Ω 50Ω
Z
IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z
OF
F (GHz)
Z IF (Ω) Z OF (Ω)
1.03 1.1 –j1.4 1.2 –j0.8
1.06 1.1 –j1.2 1.0 –j0.7
1.09 1.0 –j1.0 0.8 –j0.7
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Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty
Electrical Characteristics at 25ºC
Standard Pulse Condition: 32µS Pulse Width, 2% Duty Cycle
Peak Power: 700 Watts
PH1090-700B
12/10/01
Rev. 0
Parameter
Collector-Emitter Breakdown Voltage BVCES IC = 250 mA 80 - V
Collector-Emitter Leakage Current ICES VCE = 50 V - 25 mA
Thermal Resistance RTH(JC)
Power Gain GP
Collector Efficiency
Input Return Loss RL
Load Mismatch Tolerance VSWR-T
Load Mismatch Stability VSWR-S
Symbol Test Conditions Min Max Units
VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz
Pulse Conditions: 32µs, 2%
VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz
Pulse Conditions: 32µs, 2%
VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz
η
Pulse Conditions: 32µs, 2%
VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz
Pulse Conditions: 32µs, 2%
VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz
Pulse Conditions: 32µs, 2%
VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz
Pulse Conditions: 32µs, 2%
- 0.06
7.5 - dB
50 - %
-10 - dB
- 5.0:1 -
- 1.5:1 -
°C/W
Mode-S Pulse Train: 48 Pulses of 32µS “on”, 18µS “off” repeated
every 24 mS, 6.4% Overall Duty Cycle**
Peak Power: 450 Watts
Parameter Symbol Test Conditions Typical Units
Thermal Resistance RTH(JC)
Power Gain GP
Collector Efficiency
Input Return Loss RL
Load Mismatch Tolerance VSWR-T
Load Mismatch Stability VSWR-S
** Please note, the standard PH1090-700B device will be tested in accordance with the specifications defined for
the Standard Pulse Condition (32µS, 2%)
VCC=45v, Pout=450 W, F=1.03, 1.09 GHz
Mode-S Pulse Train
VCC=45v, Pout=450 W, F=1.03, 1.09 GHz
Mode-S Pulse Train
VCC=45v, Pout=450 W, F=1.03, 1.09 GHz
η
Mode-S Pulse Train
VCC=45v, Pout=450 W, F=1.03, 1.09 GHz
Mode-S Pulse Train
VCC=45v, Pout=450 W, F=1.03, 1.09 GHz
Mode-S Pulse Train
VCC=45v, Pout=450 W, F=1.03, 1.09 GHz
Mode-S Pulse Train
0.20
8.0 dB
55 %
-13 dB
2:1 -
1.5:1 -
°C/W
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Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty
PH1090-700B
12/10/01
Rev. 0
Gain & Efficiency vs P
Vcc = 50V, Pulse Width = 32µS, Duty Cycle = 2%
Frequency = 1030 MHz
9.0
Gain
8.5
8.0
Gain (dB)
7.5
7.0
300 400 500 600 700 800
Pout (watts)
Efficiency
65
60
55
50
Collector Efficiency (%)
45
9.0
8.5
8.0
Gain (dB)
7.5
7.0
OUT
Frequency = 1090 MHz
Efficiency
Gain
300 400 500 600 700 800
Pout (watts)
65
60
55
50
45
Collector Efficiency (%)
Gain & Efficiency vs P
Frequency = 1030 MHz
9.0
Gain
8.5
8.0
Gain (dB)
7.5
7.0
300 350 400 450 500 550
Efficiency
Pout (watts)
Vcc = 45V, Mode-S Pulse Train
65
60
55
50
Collector Efficiency (%)
45
9.0
8.5
8.0
Gain (dB)
7.5
7.0
300 350 400 450 500 550
OUT
Frequency = 1090 MHz
Pout (watts)
Gain
Efficiency
65
60
55
50
45
Collector Efficiency (%)
3
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Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty
Broadband Circuit Dimensions
PH1090-700B
12/10/01
Rev. 0
Broadband Assembly Diagram
Specifications subject to change without notice.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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