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an AMP company
Wireless Bipolar Power Transistor, 35W
850 - 960 MHz
Features
Designed for Linear Amplifier Applications
Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP
Class A: +53dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Absolute‘ Maximum Ratings at 25°C
.100*.010
(2.54t.25)
I t
c5.?4)
PH081 o-35
.230
Electrical Characteristics at 25°C
Typical Optimum Device Impedances
F(MHz)
600 1 .O + j3.7 2.1 + j0.9
650 1.3 + j4.0 1.6 + j0.7 900 1.9 + j4.3 1.6+jO.4
960 3.0 + j2.7 1.7 + jO.1
q#4
ZOAim
UNLESS OTHERWISE NOTED, TOLERANCES ARE ,.HILuNETERS tlsnn,
INCHES f.005
- 2 LOA
i.i”Tw
ZIN
Specifications Subject to Change Without Notice.
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Wireless Bipolar Power Transistor, 35W
v2.00
Typical Broadband Performance Curves
PH0810-35
GAIN-EFFICIENCY vs FREQUENCY
Po,,=35 W Vcc=24 V I,,=200 mA
l5 6 75
14
11
10 1
* -
850 900 960
FREQUENCY (MHz)
' 25
GAIN vs POWER OUTPUT
F=900 MHz V,,=24 V
OUTPUT POWER vs COLLECTOR VOLTAGE
1,,=200 mA F=900 MHz
P,,r0.75 w _
72 14 16 18 20 22 24 26
COLLECTOR VOLTAGE (V)
C,, vs COLLECTOR VOLTAGE
60 ,
F=l.OMHz
I
24 27 30 33 36 39 42 45 48
P,, Wm)
IMD vs PoUT
Vcc=24 V I,,=200 mA F1=900 MHz F2=900.1 MHz
Claaa A6
24 28 32 36 40 44 48
P&PEP) in dBm
5 10 15 20 25 30
v,, W)
IMD vs P,,
Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1 MHz
9
6
ii
z
3
0
-15 r
24 26 32 36 40 44 48
Clam A
P&PEP) in dBm
6
B
2
3
0
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Wireless Bipolar Power Transistor, 35W
RF Test Fixture
“B
PH0810-35
v2.00
Cl
P
740
CR1
c2
iii.
1,241
247 - (*)
431
ARTWORK DIMENSIONS IN MILS
PAR-l-S
Cl c2 c3 c4
C5
C6
CR1
Ll L2
Ql
Rl
RLl
BOARD TYPE
Specifications Subject to Change Wiiout Notice.
LIST
100 pF ATC SIZE B
5000 pF
50 UF 50 VOLTS
lN4245 DIODE
lOT/Nll, 20 AWG ON l/8’ DIAMETER
PH0810-35
5 OHMS l/4 WATT
lOT/ND, 22 AWG ON 3.1 OHM l/4 WATT
ROGERS 6010,5 ,025' THICK, ER = 1085
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