Key Features
• 1550 nm DFB CW source monolithicly
integrated with an Electro Absorptionmodulator (EA)
• Hermetic, 14 pin butterfly package
• Single-mode fiber pigtail
• 4 GHz typical bandwidth
• -3 dBm output power
• Multisourced footprint
Applications
• 2.5 Gb/s
• DWDM-systems
PGT 201 02
DFB/EA Laser Module
for 2.5 Gb/s Applications
Description
The laser module, intended for DWDM applications at OC-48/STM-16,
consists of a DFB laser with integrated absorption modulator mounted in a
high speed package including isolator. Laser wavelengths are available
according to the ITU-T grid.
1
PGT 201 02
71
10k
TEC
Figure 1. Block diagram
30.0
5.0
Pin 14
ø6.0
4xø2.7
Pin 1
8
TOP VIEW
20.83 4.58
26.04
30.0
7.38
7x0.5 6x2.54
8.1
8.89
0.76
12.7
14
0.2
5.4
5.0
Pin Description
1. Thermistor
2. Thermistor
3. Laser DC bias (+)
4. Monitor (-)
5. Monitor (+)
6. TEC (+)
7. TEC (-)
8. NC
9. NC
10. GND
11. GND
12. EA modulation (-)
13. GND
14. GND
Figure 2. Mechanical outline and pin description
2
PGT 201 02
Optical Characteristics
Electrical and optical characteristics at recommended operating conditions, unless otherwise noted.
Parameter Conditions Symbol Min Typ Max Unit
Wavelength ITU-T grid λ 1530 1564 nm
Output power BOL P
Extinction ratio 2.5 V
pp
out
ER 10 dB
Dispersion penalty @ 6500 ps/nm disp. 1.5 dB
Side mode suppr.ratio SMSR 35 dB
Optical isolation 30 dB
Electrical Characteristics
Parameter Conditions Symbol Min Typ Max Unit
Operating Current I
Treshold Current I
Forward Voltage V
Reflection E/E 0-3 GHz S
Small signal modulation bandwidth -3 dB
e
Rise/Fall time 20/80% tr/t
Monitor current 0.1 1 mA
Monitor dark current -5 V 5 100 nA
Thermistor resistance @ 25 °C 9.5 10.5 kΩ
TEC Voltage -2.5 2.5 V
Current -1.2 1.2 A
Power 3W
op
th
f
11
f
C
f
-3 dBm
50 100 mA
25 mA
2V
-10 dB
3 GHz
125 ps
Operating Conditions
Parameter Symbol Min Typ Max Unit
Operating Case Temperature T
Operating Chip Temperature T
Case
op
070°C
20 35 °C
Absolute Maximum Ratings
Parameter Symbol Min Max Unit
Storage Temperature, maximum duration 12 months T
Laser forward current I
Modulator voltage V
Stg
LD
mod
CAUTION: Stresses outside those listed in ”Absolute Maximum Ratings” may cause permanent damage to the device.
-40 85 °C
150 mA
-4 1 V
3
PGT 201 02
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both handling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device production and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
FC/PC
SC
(Other connectors available on request)
DANGER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGT 201 02 Rev. E
© Ericsson Microelectronics AB, October 2000
4
Loading...