Datasheet PF08103A Datasheet (HITACHI)

PF08103A

MOS FET Power Amplifier Module

for E-GSM900 and DCS1800 Dual Band Handy Phone

ADE-208-685B (Z)

Application

• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).

• For 4.8 V nominal battery use

Features

• 1 in / 2 out dual band amplifier

• Simple external circuit including output matching circuit

• Simple band switching and power control

• High gain 3stage amplifier : +4.5 dBm input

• Lead less thin & Small package : 11 × 13.75 × 1.8 mm

• High efficiency : 48% Typ at 34.5 dBm for E-GSM

36% Typ at 31.5 dBm for DCS1800

3rd Edition

Apr. 1999

PF08103A

Internal Circuit Block Diagram

Vdd1

Vdd2

Pin

Bias circuit

V

CTL

V

CTL

Vapc

Band Select and Power Control (H: 2 V Min, L: 0.3 V Max)

Operating Mode V

CTL

GSM Tx ON H L Control
DCS Tx ON L H Control
Tx OFF L L < 0.2 V

V

CTL

Vapc

Pout

Pout

GSM

DCS

Current of Control Pin

Control Pin Equivalent Input Circuit Control Current

V

CTL

V

CTL

Vapc 3 mA Max at 3 V

2

160 µA Max at 3 V

80 µA Max at 3 V

Internal Diagram and External Circuit

8

Pin

Z1 Z2

Bias circuit

4

Pout

5

Pout

PF08103A

GSM

DCS

Z3

3

C2

Pin

C1

6

V

C3

CTL

V

CTL

C5

FB

V

CTL

V

CTL

721

Vapc Vdd2Vdd1

C6 C7 C4

FB FB

Vapc Vdd2Vdd1

Note: C1 = C2 = 4.7 µF TANTALUM ELECTROLYTE

C3 = C4 = 0.01 µF CERAMIC CHIP
C5 = C6 = C7 = 1000 pF CERAMIC CHIP
FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent
Z1 = Z2 = Z3 = 50 Ω MICRO STRIP LINE

Pout

DCS

Pout

GSM

3

PF08103A

C

C

Absolute Maximum Ratings (Tc = 25°C)

Item Symbol Rating Unit

Supply voltage V
Supply current I

V

, V

CTL

voltage V

CTL

DD

DD GSM

I

DD DCS

CTL

, V

CTL

Vapc voltage Vapc 4 V
Input power Pin 10 dBm
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout

Pout

GSM

DCS

Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band

(1710-1785 MHz).

Electrical Characteristics for DC (Tc = 25°C)

8.5 V
3A
3A
4V

5W
3W

Item Symbol Min Typ Max Unit Test Condition

Drain cutoff current Ids — — 20 µA Vdd = 6.0 V, Vapc = 0 V,

V

= 0 V, V

CTL

CTL

= 0 V

— — 300 µA Vdd = 8.5 V, Vapc = 0 V,

V

= 0 V, V

TL

= 0 V,

TL

Tc = –20 to +80°C

V

control current I

CTL

V

control current I

CTL

CTL

CTL

— 100 160 µAV
—5080µAV

= 3.0 V

CTL

= 3.0 V

CTL

4

PF08103A

GS

GS

Electrical Characteristics for GSM900 mode (Tc = 25°C)

Test conditions unless otherwise noted:

f = 880 to 915MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V
Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.

Item Symbol Min Typ Max Unit Test Condition

Frequency range f 880 — 915 MHz
Control voltage range Vapc 0.2 — 3.0 V
Vapc control current Iapc — — 3 mA Vapc = 3.0V
Total efficiency η

T

2nd harmonic distortion 2nd H.D. — –45 –35 dBc Vapc = control
3rd harmonic distortion 3rd H.D. — –45 –35 dBc
4th~8th harmonic distortion 4th~8th H.D. — — –35 dBc
Input VSWR VSWR (in) — 2 3 —
Output power (1) Pout (1) 35.0 35.7 — dBm Vapc = 3.0V
Output power (2) Pout (2) 33.0 34.0 — dBm Vdd = 4.2V, Vapc = 3.0V,

Isolation — — –40 –20 dBm Vapc = 0.2 V
Isolation at

— — –30 –20 dBm Pout
DCS RF-output
when GSM is active

Switching time tr, tf — 1 2 µs Pout
Stability — No parasitic oscillation

Load VSWR tolerance — No degradation

Noise power Pnoise1 — — –73 dBm f0 = 915MHz, frx = f0 +10MHz

Pnoise2 — — –85 dBm f0 = 915MHz, frx = f0 +20MHz

Pnoise3 — — –77 dBm frx = 1805 to 1880MHz

Slope Pout/Vapc — — — 200 dB/V Pout

43 48 — % Pout

All spuriouses < –36 dBm

or
Permanent degradation

= 2.0V, V

CTL

= 0.3V, Rg = Rl = 50Ω,

CTL

= 34.5dBm,

GSM

Tc = +85°C, Pin = +3dBm

= 34.5dBm (GSM mode)

M

Measured at f = 1760 to 1830MHz

= –15 to 35.0dBm

GSM

—VDD = 4.2 to 6.3V, Pout ≤ 35.0dBm,

Vapc ≤ 3.0V GSM pulse.
Rg = 50Ω, Tc = –20 to +85°C,
Output VSWR = 6 : 1 All phases,
RES BW = 3MHz

—VDD = 4.2 to 6.3V,

Pout

≤ 35.0dBm,

M

Vapc ≤ 3.0V GSM pulse. Rg = 50Ω,
t = 30sec., Tc = –20 to +85°C,
Output VSWR = 10 : 1 All phases

Pout

Pout

Pout

= 35dBm, RES BW = 100kHz

GSM

= 35dBm, RES BW = 100kHz

GSM

= 35dBm, RES BW = 100kHz

GSM

= 0 to 35dBm

GSM

5

PF08103A

CS

CS

Electrical Characteristics for DCS1800 mode (Tc = 25°C)

Test conditions unless otherwise noted:

f = 1710 to 1785MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V
Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.

Item Symbol Min Typ Max Unit Test Condition

Frequency range f 1710 — 1785 MHz
Control voltage range Vapc 0.2 — 3.0 V
Vapc control current Iapc — — 3 mA Vapc = 3.0V
Total efficiency η

T

2nd harmonic distortion 2nd H.D. — –45 –35 dBc Vapc = control
3rd harmonic distortion 3rd H.D. — –45 –35 dBc
4th~8th harmonic distortion 4th~8th H.D. — — –35 dBc
Input VSWR VSWR (in) — 3 5 —
Output power (1) Pout (1) 32.5 33.0 — dBm Vapc = 3.0V
Output power (2) Pout (2) 31 31.5 — dBm Vdd = 4.8V, Vapc = 3.0V,

Isolation — — –35 –30 dBm Vapc = 0.2V
Switching time tr, tf — 1 2 µs Pout
Stability — No parasitic oscillation — VDD = 4.2 to 6.3V, Pout

Load VSWR tolerance — No degradation — VDD = 4.2 to 6.3V, Pout

Noise power Pnoise1 — — –77 dBm f0 = 1785MHz, frx = f0 +20MHz,

Pnoise2 — — –74 dBm frx = 925 to 935MHz,

Pnoise3 — — –85 dBm frx = 935 to 960MHz,

Slope Pout/Vapc — — — 200 dB/V Pout
Intermodulation — — — –20 dBm Pout = 31.5dBm,

33 36 — % Pout

= 0.3V, V

CTL

= 2.0V, Rg = Rl = 50Ω,

CTL

= 31.5dBm,

DCS

Tc = +85°C, Pin = +3dBm

= –15 to 32.0dBm

DCS

Vapc ≤ 3.0V DCS pulse.
Rg = 50Ω, Tc = –20 to +85°C,
Output VSWR = 6 : 1 All phases

Vapc ≤ 3.0V DCS pulse. Rg = 50Ω,
t = 30sec., Tc = –20 to +85°C,
Output VSWR = 10 : 1 All phases

Pout

Pout

Pout

= 31.5dBm, RES BW = 30kHz

DCS

= 31.5dBm, RES BW = 30kHz

DCS

= 31.5dBm, RES BW = 30kHz

DCS

= 0 to 32.0dBm

DCS

Interferer.CW f0 +800kHz,
Pinterfer = –9dBm, RES BW = 300kHz,
Measure at f0 –800kHz

≤ 32.5dBm,

D

≤ 32.5dBm,

D

6

Package Dimensions

87 56G

PF08103A

Unit: mm

1.8 ± 0.2

11.0 ± 0.3

11.0 ± 0.3
(1.40)

(10.8)

(2.40)
(2.40)

12 43G

(1.60)

(1.40)
(1.40) (1.40)

(Upper side)

13.75 ± 0.3

13.75 ± 0.3

(5.40)

(3.30) (3.30)

(3.40)

(1.60)

(5.40)

(1.60)(1.60)

GG

(1.40)

(1.40)

(3.40)

11.0 ± 0.3

5

6

G

7

8

G

Pin arrangement
1 : V

CTL

2 : V

CTL

3 : Vdd2
4 : Pout
5 : Pout
6 : Vdd1
7 : Vapc
8 : Pin
G : GND

1

GSM
DCS

G

4

3

G

2

(3.70)

(2.50) (2.50)

(Bottom side)

(3.70)

(1.40)

Remark:
Coplanarity of bottom side of terminals
are less than 0 ± 0.1mm.

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

RF-O





7

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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