Datasheet PF0414B Datasheet (HITACHI)

PF0414B

MOS FET Power Amplifier Module

for DCS 1800 Handy Phone

Application

For DCS 1800 class1 1710 to 1785 MHz.

Features

• 3stage amplifier : 0 dBm input

• Lead less thin & small package : 2 mm Max & 0.2cc

• High efficiency : 40% Typ at 32.5 dBm

• Wide gain control range : 70 dB Typ

• Low voltage operation : 3.5 V

ADE-208-432C (Z)

4th Edition

December 1997

Pin Arrangement

• RF-K
4

3

G

G

G

G

1

1: Pin
2: Vapc
3: Vdd

2

4: Pout
G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item Symbol Rating Unit

Supply voltage V
Supply current I
V

voltage V

APC

Input power Pin 10 mW
Operating case temperature Tc (op) –30 to +100 °C
Storage temperature Tstg –30 to +100 °C
Output power Pout 3 W

DD

DD

APC

8V
2A
4V

PF0414B

C

C

C

Electrical Characteristics (Tc = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Frequency range f 1710 — 1785 MHz
Control voltage range V
Drain cutoff current I
Total efficiency η

APC

DS

T

2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 32.5 dBm (at APC controlled),
3rd harmonic distortion 3rd H.D. — –45 –35 dBc RL = Rg = 50 Ω, Tc = 25°C
Input VSWR VSWR (in) — 1.5 3 —
Output power (1) Pout (1) 32.5 33.0 — dBm Pin = 0 dBm, VDD = 3.5 V,

Output power (2) Pout (2) 31 31.5 — dBm Pin = 0 dBm, VDD = 3.0 V,

Isolation — — –36 –33 dBm Pin = 0 dBm, VDD = 3.5 V,

Switching time tr, tf — 1 2 µs Pin = 0 dBm, VDD = 3.5 V,

Stability — No parasitic

0.5 — 2.2 V
— — 100 µAVDD = 8 V, V

APC

= 0 V

35 40 — % Pin = 0 dBm, VDD = 3.5 V,

V

= 2.2 V, RL = Rg = 50 Ω,

AP

Tc = 25°C

V

= 2.2 V, RL = Rg = 50 Ω,

AP

Tc = 85°C

V

= 0.5 V, RL = Rg = 50 Ω,

AP

Tc = 25°C

Pout = 32.5 dBm, R

= Rg = 50 Ω,

L

Tc = 25°C

— Pin = 0 dBm, VDD = 3 to 5.1 V,

oscillation

Pout ≤ 32.5 dBm (at APC controlled),
Rg = 50 Ω, t = 20 sec., Tc = 25°C,
Output VSWR = 6 : 1 All phases

2

Package Dimensions

PF0414B

Unit: mm

43G

(7.8)

8.0 ± 0.3

12

G

(Upper side)

13.75 ± 0.3

12

(3.7)

(3.7)

43GG

(1.8) (1.8) (1.8) (1.8)

(1.3) (1.3)

(2.225) (2.975)

(6.875)

13.75 ± 0.3

(Bottom side)

(9.6)

(1.6)

G

G

GG

(6.875)

(2.1)(2.1)

1.8 ± 0.2

8.0 ± 0.3

3

G

G

4

G

1

(0.6)

Remark:
Coplanarity of bottom side of terminals
are less than 0 ± 0.1mm.

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

RF-K





2

G

3

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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