Datasheet PF0210 Datasheet (HITACHI)

PF0210

MOS FET Power Amplifier Module for ADC Mobile Phone

ADE-208-102E (Z)

Features

• High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK

• Low input power: 0 dBm ave. Typ for π /4-DQPSK

• Simple bias circuit

• High speed switching: 8 µs Typ

Pin Arrangement

Preliminary

6th Edition

July 1996

• RF-B2

5

1: Pin 2: V

4

3

2

5

1

APC

3: V

DD

4: Pout 5: GND

PF0210

Internal Diagram and External Circuit

G

GND

Pin1

Z1

Pin2

V

APC

C1 C3 C2

FB1 FB2

V

APC

Pin3

V

DD

Pin4 Pout

V

DD

Pout

G

GND

Z2

C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)

Absolute Maximum Ratings (Tc = 25°C)

Item Symbol Rating Unit

Supply voltage V Supply current I V

voltage V

APC

DD

APC

Input power Pin 20 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –40 to +110 °C

17 V 4A

5.5 V

2

Electrical Characteristics (Tc = 25°C)

Analog Transmission

Item Symbol Min Typ Max Unit Test Condition

Frequency f 824 — 849 MHz — Drain cutoff current I

DS

Total efficiency(1) ηT(1) 30 34 — % Pin = 3 dBm, VDD = 12.5 V, 2nd harmonic distortion 2nd H.D. — –55 –30 dBc Pout = 6 W (V 3rd harmonic distortion 3rd H.D. — –60 –40 dBc Input VSWR VSWR (in) — 2 3 — Output power Pout 6 9 — W Pin = 3 dBm, VDD = 12.5 V,

Isolation — — –45 –40 dBm Pin = 3dBm, VDD = 12.5 V,

Stability — No parasitic oscillation — Pin = 3 dBm, VDD = 12.5 V,

— — 500 µAVDD = 17 V, V

V

= 4 V

APC

V

= 0.5 V

APC

Pout ≤ 6 W, Output VSWR = 20:1 All phases

= 0 V

APC

controlled),

APC

PF0210

Digital Transmission

Item Symbol Min Typ Max Unit Test Condition

Frequency f 824 — 849 MHz — Total efficiency(2) ηT(2) 25 30 — % Pin controlled (π/4-DQPSK, √α = Adjacent channel P leakage power P

(30k) — –30 –28 dBc 0.35, 48.6 kbps),

ADJ

(60k) — –50 –46 dBc BW =24.3 kHz with Root Nyquist

ADJ

Input power Pin — — 5 dBm ave. Filter,

Pout = 5.5 W ave., V

= 3.9 V

VAPC

= 12.5 V

DD

Mechanical Characteristics

Item Conditions Spec

Torque for screw up the heatsink flange M3 Screw Bolts 4 to 6 kg•cm Warp size of the heatsink flange: S

S

S = 0 +0.3/– 0 mm

3

PF0210

Characteristics Curve

6

5

4

5

4

(V)

3

APC

V

APC

η

, ηT, VSWR (in) vs. Frequency

V

APC

60 Pin = 2 mW V

= 12.5 V

DD

Pout = 6 W

50

40

(%)

T

30

3

V.S.W.R. (in)

Apc Voltage V

2

1

6

5

4

3

V.S.W.R. (in)

20

16

12

Output Power Pout (W)

2

1

0 824

8

4

V

SWRin

829 839

834 844

Frequency f (MHz)

Pout, η

, VSWR (in) vs. Frequency

T

η

T

Pout

V

SWRin

Pin = 2 mW V

= 12.5 V

DD

V

= 3.9 V

APC

849

20

10

0

60

50

40

30

20

10

Efficiency η

(%)

T

Efficiency η

1

0 824

829 839

834 844

0

849

Frequency f (MHz)

4

−20

−30

2nd H.D, 3rd H.D vs. Frequency (1)

Pin = 2 mW V

= 12.5 V

DD

Pout = 6 W

PF0210

−20

−30

−40

−50

2nd H.D (dB)

−60

−70

824

−20

−30

−40

2nd H.D

3rd H.D

829 839

834 844

Frequency f (MHz)

2nd H.D, 3rd H.D vs. Frequency (2)

Pin = 2 mW V

= 12.5 V

DD

V

= 3.9 V

APC

849

−40

−50

−60

−70

−20

−30

−40

3rd H.D (dB)

−50

2nd H.D (dB)

−60

−70

824

3rd H.D

2nd H.D

829 839

834 844

Frequency f (MHz)

849

−50

−60

−70

3rd H.D (dB)

5

PF0210

Pout, ηT vs. Frequency (1)

20

16

12

8

Output Power Pout (W)

4

η

T

Pout

Pin = 2 mW V

= 12.5 V

DD

V

= 3.9 V

APC

60

50

40

30

20

10

(%)

T

Efficiency η

0 824

829 839

Frequency f (MHz)

Pout, ηT vs. Frequency (2)

20

16

12

8

Output Power Pout (W)

4

Tx Rx

0 824

838 866

Frequency f (MHz)

834 844

Pin = 2 mW V

= 12.5 V

DD

V

= 3.9 V

η

T

APC

Pout

852 880

849

894

0

60

50

40

30

20

10

0

(%)

T

Efficiency η

6

5

(V)

4

3

V.S.W.R. (in)

APC

Apc Voltage V

PF0210

, ηT, VSWR (in) vs. VDD (1)

V

APC

5

f = 824 MHz Pin = 2 mW Pout = 6 W

4

V

APC

3

η

T

2

60

50

40

30

20

(%)

T

Efficiency η

2

1

6

5

(V)

4

3

V.S.W.R. (in)

APC

Apc Voltage V

2

1

0

10.5

5

4

3

2

1

V

SWRin

11.5 14.5

12.5 15.5

13.5

Supply Voltage VDD (V)

, ηT, VSWR (in) vs. VDD (2)

V

APC

V

APC

η

T

V

SWRin

f = 849 MHz Pin = 2 mW Pout = 6 W

16.5

10

0

60

50

40

30

20

10

(%)

T

Efficiency η

1

0

10.5

11.5 14.5

12.5 15.5

13.5

0

16.5

Supply Voltage VDD (V)

7

PF0210

−20

−30

−40

−50

2nd H.D (dB)

−60

−70

10.5

−20

−30

2nd H.D, 3rd H.D vs. V

2nd H.D

3rd H.D

11.5 14.5

12.5 15.5

Supply Voltage VDD (V)

2nd H.D, 3rd H.D vs. V

13.5

(1)

DD

f = 824 MHz Pin = 2 mW Pout = 6 W

(2)

DD

f = 849 MHz Pin = 2 mW Pout = 6 W

16.5

−20

−30

−40

−50

−60

−70

−20

−30

3rd H.D (dB)

−40

−50

2nd H.D (dB)

−60

−70

10.5

2nd H.D

3rd H.D

11.5 14.5

12.5 15.5

Supply Voltage VDD (V)

13.5

16.5

−40

−50

−60

−70

3rd H.D (dB)

8

PF0210

Pout, ηT vs. V

25

f = 824 MHz Pin = 2 mW V

= 12.5 V

DD

20

15

10

Output Power Pout (W)

5

0

2.5 4

2

3 4.5

Apc Voltage V

Pout, ηT vs. V

25

f = 849 MHz Pin = 2 mW V

= 12.5 V

DD

20

15

3.5

APC

η

T

Pout

APC

η

T

(1)

(V)

(2)

60

50

40

(%)

T

30

Efficiency η

20

10

0

5

60

50

40

(%)

T

30

10

Output Power Pout (W)

5

0

2.5 4

2

3 4.5

Apc Voltage V

3.5

Pout

APC

(V)

Efficiency η

20

10

0

5

9

PF0210

6

5

15

12

4

3

V.S.W.R. (in)

Output Power Pout (W)

2

1

6

5

15

12

Pout, η

, VSWR (in) vs. Pin (1)

T

60 f = 824 MHz V

= 12.5 V

DD

V

= 3.9 V

APC

η

9

T

50

40

(%)

T

30

6

Pout

3

V

SWRin

0

0.2 0.6

0.4 0.8

1.0

20

10

0

Efficiency η

Input Power Pin (mW)

Pout, η

, VSWR (in) vs. Pin (2)

T

60 f = 849 MHz V

= 12.5 V

DD

V

= 3.9 V

APC

50

4

3

V.S.W.R. (in)

Output Power Pout (W)

2

1

η

T

9

40

(%)

T

30

Pout

6

Efficiency η

20

3

0

0.2 0.6

V

SWRin

0.4 0.8

10

0

1.0

Input Power Pin (mW)

10

Package Dimensions

12.7 ± 0.5

11.0 ± 0.3

+ 0.6

– 0.3

5.0

2.3

13.0 ± 1

60.5 ± 0.5

57.5 ± 0.5

R1.6

2134

0.5

5 ± 1

6.35 ± 0.5

49.8 ± 0.5

3.3

9.2 ± 1

0.25

8.0 ± 1

22.0 ± 1

PF0210

Unit: mm

Hitachi Code JEDEC EIAJ Weight

(reference value)

RF-B2 — — 16 g

11

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223

Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533

Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX