Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMD6
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open
Product specification
Supersedes data of 2001 Oct 22
2001 Nov 07
Page 2
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
PEMD6
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 NPN −−
TR2 PNP −−
R1 bias resistor 4.7 kΩ
R2 open −−
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 50 V
peak collector current 100 mA
465
654
MARKING
TYPE NUMBER MARKING CODE
PEMD6 D6
R1
TR1
R1
123
Top view
MHC028
123
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
TR2
2001 Nov 07 2
Page 3
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage TR1
positive − +40 V
negative −−10 V
input voltage TR2
positive − +10 V
negative −−40 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07 3
Page 4
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open
CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 input resistor 3.3 4.7 6.1 kΩ
C
c
collector-base cut-off current VCB=50V; IE=0 −−100 nA
collector-emitter cut-off current VCE=50V; IB=0 −−1µA
V
=30V; IB= 0; Tj= 150 °C −−50 µA
CE
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=10mA 200 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz
TR1 (NPN) −−2.5 pF
TR2 (PNP) −−3pF
2001 Nov 07 4
Page 5
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
3
10
handbook, halfpage
h
FE
2
10
−1
10
TR1 (NPN); VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 100°C.
=25°C.
= −40 °C.
(1)
(2)
(3)
11010
MHC024
2
IC (mA)
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
−1
10
TR1 (NPN); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C.
=25°C.
= −40 °C.
PEMD6
MHC025
(1)
(2)
(3)
110
IC (mA)
2
10
Fig.3 DC current gain as a function of collector
current; typical values.
3
10
handbook, halfpage
h
FE
2
10
10
−1
−10
TR2 (PNP); VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C.
=25°C.
= −40 °C.
(1)
(2)
(3)
−1 −10
MHC026
IC (mA)
−10
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC (mA)
MHC027
−10
2
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
(1)
(2)
(3)
2
−10
−10
−1
−1 −10
TR2 (PNP); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C.
=25°C.
= −40 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
2001 Nov 07 5
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Page 6
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT666
D
S
YS
A
E
H
E
X
pin 1 index
123
e
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
A
0.6
0.5
0.27
0.17
p
cD
0.18
0.08
1
1.7
1.5
b
p
e
E
1.3
1.1
456
A
wM
A
0 1 2 mm
scale
e
H
L
1.0
e
1
E
1.7
0.5
1.5
0.3
0.1
p
w
0.1y0.1
detail X
c
L
p
OUTLINE
VERSION
SOT666
IEC JEDEC EIAJ
REFERENCES
2001 Nov 07 6
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
Page 7
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
STATUS
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 07 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 75009048
SCA73
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