Datasheet PEMD6 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PEMD6

NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open

Product specification
Supersedes data of 2001 Oct 22

2001 Nov 07

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666
plastic package.

PEMD6

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

CM

TR1 NPN −−
TR2 PNP −−
R1 bias resistor 4.7 kΩ
R2 open −−

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

handbook, halfpage

collector-emitter voltage 50 V
peak collector current 100 mA

465

654

MARKING

TYPE NUMBER MARKING CODE

PEMD6 D6

R1

TR1

R1

123

Top view

MHC028

123

Fig.1 Simplified outline (SOT666) and symbol.

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

TR2

2001 Nov 07 2

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;

PEMD6

R1 = 4.7 kΩ, R2 = open

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

V

i

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage TR1

positive − +40 V
negative −−10 V

input voltage TR2

positive − +10 V

negative −−40 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

notes 1 and 2 416 K/W

ambient

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

2001 Nov 07 3

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;

PEMD6

R1 = 4.7 kΩ, R2 = open

CHARACTERISTICS

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

R1 input resistor 3.3 4.7 6.1 kΩ
C

c

collector-base cut-off current VCB=50V; IE=0 −−100 nA
collector-emitter cut-off current VCE=50V; IB=0 −−1µA

V

=30V; IB= 0; Tj= 150 °C −−50 µA

CE

emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=10mA 200 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz

TR1 (NPN) −−2.5 pF

TR2 (PNP) −−3pF

2001 Nov 07 4

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open

3

10

handbook, halfpage

h

FE

2

10

−1

10

TR1 (NPN); VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 100°C.
=25°C.
= −40 °C.

(1)

(2)

(3)

11010

MHC024

2

IC (mA)

3

10

handbook, halfpage

V

CEsat
(mV)

2

10

10

−1

10

TR1 (NPN); IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C.
=25°C.
= −40 °C.

PEMD6

MHC025

(1)

(2)
(3)

110

IC (mA)

2

10

Fig.3 DC current gain as a function of collector

current; typical values.

3

10

handbook, halfpage

h

FE

2

10

10

−1

−10

TR2 (PNP); VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C.
=25°C.
= −40 °C.

(1)
(2)

(3)

−1 −10

MHC026

IC (mA)

−10

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC (mA)

MHC027

−10

2

3

−10

handbook, halfpage

V

CEsat
(mV)

2

−10

(1)

(2)
(3)

2

−10

−10

−1

−1 −10

TR2 (PNP); IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C.
=25°C.
= −40 °C.

Fig.5 DC current gain as a function of collector

current; typical values.

2001 Nov 07 5

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;

PEMD6

R1 = 4.7 kΩ, R2 = open

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT666

D

S

YS

A

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

A

0.6

0.5

0.27

0.17

p

cD

0.18

0.08

1

1.7

1.5

b

p

e

E

1.3

1.1

456

A

wM

A

0 1 2 mm

scale

e

H

L

1.0

e

1

E

1.7

0.5

1.5

0.3

0.1

p

w

0.1y0.1

detail X

c

L

p

OUTLINE
VERSION

SOT666

IEC JEDEC EIAJ

REFERENCES

2001 Nov 07 6

EUROPEAN

PROJECTION

ISSUE DATE

01-01-04
01-08-27

Philips Semiconductors Product specification

NPN/PNP resistor-equipped transistors;

PEMD6

R1 = 4.7 kΩ, R2 = open

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

STATUS

(2)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Nov 07 7

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 75009048

SCA73