Datasheet PEMD6 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D744
PEMD6
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = open
Product specification Supersedes data of 2001 Oct 22
2001 Nov 07
Page 2
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES

300 mW total power dissipation
Very small 1.6 × 1.2 mm ultra thin package
Self alignment during soldering due to straight leads
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
Reduces required PCB area
Reduced pick and place costs.

APPLICATIONS

General purpose switching and amplification
Inverter and interface circuits
Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistors in a SOT666 plastic package.
PEMD6

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
TR1 NPN −− TR2 PNP −− R1 bias resistor 4.7 k R2 open −−

PINNING

PIN DESCRIPTION
1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 50 V peak collector current 100 mA
465
654

MARKING

TYPE NUMBER MARKING CODE
PEMD6 D6
R1
TR1
R1
123
Top view
MHC028
123
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
TR2
2001 Nov 07 2
Page 3
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter 50 V collector-emitter voltage open base 50 V emitter-base voltage open collector 10 V input voltage TR1
positive +40 V negative −−10 V
input voltage TR2
positive +10 V
negative −−40 V output current (DC) 100 mA peak collector current 100 mA total power dissipation T
25 °C; note 1 200 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
total power dissipation T
25 °C; note 1 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07 3
Page 4
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open

CHARACTERISTICS

T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 input resistor 3.3 4.7 6.1 k C
c
collector-base cut-off current VCB=50V; IE=0 −−100 nA collector-emitter cut-off current VCE=50V; IB=0 −−1µA
V
=30V; IB= 0; Tj= 150 °C −−50 µA
CE
emitter-base cut-off current VEB=5V; IC=0 −−100 nA DC current gain VCE=5V; IC=10mA 200 −− collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz
TR1 (NPN) −−2.5 pF
TR2 (PNP) −−3pF
2001 Nov 07 4
Page 5
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
3
10
handbook, halfpage
h
FE
2
10
1
10
TR1 (NPN); VCE=5V. (1) T (2) T (3) T
amb amb amb
= 100°C. =25°C. = 40 °C.
(1)
(2)
(3)
11010
MHC024
2
IC (mA)
3
10
handbook, halfpage
V
CEsat (mV)
2
10
10
1
10
TR1 (NPN); IC/IB= 20. (1) T (2) T (3) T
amb amb amb
= 100 °C. =25°C. = 40 °C.
PEMD6
MHC025
(1)
(2) (3)
110
IC (mA)
2
10
Fig.3 DC current gain as a function of collector
current; typical values.
3
10
handbook, halfpage
h
FE
2
10
10
1
10
TR2 (PNP); VCE= 5V. (1) T (2) T (3) T
amb amb amb
= 100 °C. =25°C. = 40 °C.
(1) (2)
(3)
1 10
MHC026
IC (mA)
10
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC (mA)
MHC027
10
2
3
10
handbook, halfpage
V
CEsat (mV)
2
10
(1)
(2) (3)
2
10
10
1
1 10
TR2 (PNP); IC/IB= 20. (1) T (2) T (3) T
amb amb amb
= 100 °C. =25°C. = 40 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
2001 Nov 07 5
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Page 6
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT666
D
S
YS
A
E
H
E
X
pin 1 index
123
e
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
A
0.6
0.5
0.27
0.17
p
cD
0.18
0.08
1
1.7
1.5
b
p
e
E
1.3
1.1
456
A
wM
A
0 1 2 mm
scale
e
H
L
1.0
e
1
E
1.7
0.5
1.5
0.3
0.1
p
w
0.1y0.1
detail X
c
L
p
OUTLINE VERSION

SOT666

IEC JEDEC EIAJ
REFERENCES
2001 Nov 07 6
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04 01-08-27
Page 7
Philips Semiconductors Product specification
NPN/PNP resistor-equipped transistors;
PEMD6
R1 = 4.7 kΩ, R2 = open
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
STATUS
(2)
development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting valuesdefinition  Limitingvalues givenare in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese orat anyother conditionsabovethose givenin the Characteristics sectionsof the specification isnot implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation orwarrantythat suchapplications willbe suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably beexpected toresult inpersonal injury.Philips Semiconductorscustomers usingorselling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuse ofany oftheseproducts, conveysno licenceortitle under any patent, copyright, or mask work right to these products,and makesno representationsor warrantiesthat these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 07 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 75009048
SCA73
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