Datasheet PD - 90335F Datasheet (IOR)

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PD - 90335F

IRF330

REPETITIVE A V ALANCHE AND dv/dt RA TED JANTX2N6760

HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)

Product Summary

Part Number BVDSS RDS(on) ID

IRF330 400V 1.00Ω 5.5A

The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis­tance combined with high transconductance; superior re­verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab­lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.

They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.

400V, N-CHANNEL

[REF:MIL-PRF-19500/542]

Features:

n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling

JANTXV2N6760

TO-3

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5. 5

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 3. 5

I

DM

PD @ TC = 25°C Max. Power Dissipation 7 5 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 4.0

T

J

T

STG

For footnotes refer to the last page

Pulsed Drain Current ➀ 22

Linear Derating Factor 0.60 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 1.7 mJ
Avalanche Current ➀ 5.5 A
Repetitive Avalanche Energy ➀ —mJ

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g

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A

V/ns

o

C

01/22/01

IRF330

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV
∆BV

R

V
g
I

I
I
Q
Q
Q
t
t
t

t

L

C
C
C

DSS

GSS
GSS

d(on)

r

d(off)

f

DSS

DSS

DS(on)

GS(th)

fs

g
gs

gd

S + LD

iss
oss
rss

Drain-to-Source Breakdown Voltage 40 0 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source On-State — — 1.00 VGS = 10V, ID =3.5A➃
Resistance — — 1.22 VGS =10V, ID =5.5A ➃
Gate Threshold Voltage 2. 0 — 4.0 V VDS = VGS, ID =250µA
Forward Transconductance 2.9 — — S ( ) VDS > 15V, IDS =3.5A➃
Zero Gate Voltage Drain Current — — 2 5 VDS=320V , VGS=0V

— — 250 VDS =320V

VGS = 0V, TJ = 125°C
Gate-to-Source Leakage Forward — — 10 0 VGS =20V
Gate-to-Source Leakage Reverse — — -100 VGS =-20V
Total Gate Charge 17 — 3 9 VGS =10V, ID=5.5A
Gate-to-Source Charge 2. 0 — 6. 0 nC VDS =200V
Gate-to-Drain (‘Miller’) Charge 8. 0 — 2 0
Turn-On Delay Time — — 3 0 VDD =200V, ID =5.5A,
Rise Time — — 4 0 RG =7.5Ω
Turn-Off Delay Time — — 8 0
Fall Time — — 3 5
Total Inductance — 6 .1 —

Input Capacitance — 62 0 VGS = 0V, VDS =25V
Output Capacitance — 2 00 — pF f = 1.0MHz
Reverse Transfer Capacitance — 7 5 —

Ω

Ω

µA

nA

ns

nH

Measured from the center of
drain pad to center of source
pad

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 5.5

S

I

Pulse Source Current (Body Diode) ➀ —— 22

SM

V

Diode Forward Voltage — — 1. 4 V Tj = 25°C, IS =5.5A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 700 nS Tj = 25°C, IF = 5.5A, di/dt ≤100A/µs

rr

Q

Reverse Recovery Charge — — 6. 2 µc VDD ≤50V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thJA

For footnotes refer to the last page

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Junction to Case — — 1.67
Junction to Ambient — — 30 Typical socket mount

°C/W

+ LD.

IRF330

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF330

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

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Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF330

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF330

15V

DRIVER

+

-

R

V

G

10V

20V

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

V

DD

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

V

DS

-

V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 13b. Gate Charge Test Circuit

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IRF330

Foot Notes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ V

=50V, starting TJ = 25°C,

DD

Peak IL = 5.5A,

➂ I

≤5.5A, di/dt ≤90A/µs,

SD

VDD≤ 400V, TJ ≤ 150°C
Suggested RG =7.5 Ω

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-204AA (Modified TO-3)

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]

Data and specifications subject to change without notice. 01/01

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