Datasheet PD57006 Datasheet (SGS Thomson Microelectronics)

Page 1
PD57006
PD57006S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
COMMON SOURCE CONFIGURATION
P
= 6 W with 15 dB gain @ 945 MHz / 28V
OUT
NEW RF PLASTIC PACKAGE DESCRIPTION
The PD57006 is a common source N-Channel, en­hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD 57006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF power package, PowerSO-10RF . PD57006’s su­perior linearity performance makes it an ideal so­lution for car mobile radio.
The LdmoST
PowerSO-10RF
(formed lead)
ORDER CODE
PD57006
Plastic FAMILY
BRANDING
PD57006
The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been spe cially optimized for RF needs and offers excellent RF performances and ease of assembly.
ORDER CODE
PD57006S
PowerSO-10R F
(straight lead)
BRANDING
PD57006S
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 65 V Gate-Source Voltage ± 20 V Drain Current 1 A Power Dissipation (@ Tc = 70°C) 20 W
Storage Temperature -65 to +150 °C
CASE
= 25°C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 5 °C/W
1/14March, 21 2003
Page 2
PD57006 - PD57006S
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
VGS = 0 V ID = 10 mA VGS = 0 V VDS = 28 V VGS = 20 V VDS = 0 V VDS = 28 V
= 70 mA
ID
VGS = 10 V ID = 0.5 A VDS = 10 V ID = 800 mA VGS = 0 V VDS = 28 V f = 1 MHz VGS = 0 V VDS = 28 V f = 1 MHz VGS = 0 V VDS = 28 V f = 1 MHz
65
1 µA 1 µA
2.0 5.0 V
0.9 V
0.58 mho 27 pF 14 pF
0.9 pF
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
G
P
η
D
Load
mismatch
VDD = 28 V IDQ = 70 mA f = 945 MHz V
= 28 V IDQ = 70 mA P
DD
VDD = 28 V IDQ = 70 mA P
= 28 V IDQ = 70 mA P
V
DD
= 6 W f = 945 MHz
OUT
= 6 W f = 945 MHz
OUT
= 6 W f = 945 MHz
OUT
ALL PHASE ANGLES
6W 14 15 dB 45 50 %
10:1 VSWR
PIN CONNECTION
SOURCE
GATE
SC15200
PD57006
()Z
FREQ. MHz
Z
IN
925 6.040 - j 0.936 6.273 + j 8.729 945 5.886 - j 2.326 6.578 + j 5.999 960 6.056 - j 3.522 7.215 + j 7.539
DRAIN
DL
IMPEDANCE DATA
()
D
Typical Input Impeda nce
Typical Drain Load Imped ance
G
Zin
S
SC13140
PD57006S
()Z
FREQ. MHz
Z
IN
925 3.794 - j 1.632 3.513 + j 10.81 945 4.039 - j 2.300 3.862 + j 10.58 960 4.250 - j 3.791 4.005 + j 11.34
Z
DL
()
DL
2/14
Page 3
TYPICAL PERFORMANCE
0 4 8 12 16 20 24 28
VDD, DRAIN VOLTAGE (V)
0.1
1
10
100
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Capacitance vs. Drain Voltage
Gate-Source Voltage vs. Case Temperature
PD57006 - PD57006S
Drain Current vs. Gate-Source Voltage
1
0.8
0.6
0.4
Id, DRAIN CURRENT (A)
0.2
0
2 2.5 3 3.5 4 4.5 5 5.5
VGS, GATE-SOURCE VOLTAGE (V)
Vds=10 V
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
VGS, GATE-SOURCE VOLTAGE(Normalized)
-25 0 25 50 75 100
Vds=10 V
Tc, CASE TEMPERATURE (°C)
Id=.05 A
Id=1.5 A
Id=1 A
Id=.6 A
Id=.2 A
3/14
Page 4
PD57006 - PD57006S
TYPICAL PERFORMANCE Output Power vs. Input Power
PD57006
Power Gain vs. Output Power
9 8 7 6 5 4 3 2
Pout, OUTPUT POWER (W)
1
0
0 0.1 0.2 0.3 0.4
Pin, INPUT POWER (W)
925 MHz
960 MHz
945 MHz
Vdd=28V Idq=70mA
Drain Efficiency vs. Output Power
60
50
40
945 MHz
30
20
Nd, DRAIN EFFICIENCY (%)
10
0123456789
Pout, OUTPUT POWER (W )
925 MHz
960 MHz
Vdd=28V Idq=70mA
18 16 14 12 10
8
Pg, POWER GAIN (dB)
6 4
0123456789
945 MHz
Pout, OUTPUT POWER (W)
925 MHz
960 MHz
Vdd=28V Idq=70mA
Inpu t R e turn L o s s vs. Out p u t Powe r
0
-5
-10
-15
Rtl, RETURN LOSS (dB)
-20
-25 0123456789
960 MHz
925 MHz
Pout, OUTPUT POWER (W )
945 MHz
Vdd=28V Idq=70mA
Output Power vs. Bias Current
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
0 100 200 300 400
4/14
925 MHz
IDQ, BIAS CURRENT (mA)
945 MHz
960 MHz
Vdd=28V Pin= 23.6 dBm
Drain Efficiency vs. Bias Current
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400
945 MHz
925 MHz
IDQ, BIAS CURRENT (mA)
960 MHz
Vdd=28V Pin= 23.6 dBm
Page 5
TYPICAL PERFORMANCE Output Power vs. Supply Voltage
PD57006 - PD57006S
Drain Efficiency vs. Supply Voltage
8 7 6 5 4 3
Pout, OUTPUT POWER (W)
2
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
960 MHz
Idq=70 mA Pin= 23.6 dBm
Output Power vs. Gate-Source Voltage
9 8 7 6 5 4 3 2
Pout, OUTPUT POWER (W)
1 0
01234
VGS, G ATE-SOURCE VOLTAGE (V)
925 MHz
945 MHz
Vdd=28V Pin= 23.6 dBm
960 MHz
60
925 MHz
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
960 MHz
10 12 14 16 18 20 22 24 26 28 30
945 MHz
VDD, SUPPLY VOLTAGE (V)
Idq= 70 mA Pin= 23.6 dBm
5/14
Page 6
PD57006 - PD57006S
TYPICAL PERFORMANCE Output Power vs. Input Power PD57006S
Power Gain vs. Output Power
9 8 7 6 5 4 3 2
Pout, OUTPUT POWER (W)
1 0
0 0.1 0.2 0.3 0.4
925 MHz
945 MHz
Pin, INPUT POWER (W)
960 MHz
Vdd=28V Idq=70mA
Drain Efficiency vs. Output Power
60
945 MHz
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0123456789
960 MHz
Pout, OUTPUT POWER (W)
925 MHz
Vdd=28V Idq=70mA
18
16
14
12
10
8
Pg, POWER GAIN (dB)
Vdd=28V Idq=70mA
6
4
0123456789
945 MHz
Pout, OUTPUT POWER (W)
925 MHz
960 MHz
Inpu t R e turn L o s s vs. Out p u t Powe r
0
Vdd=28V
-5
Idq=70mA
-10
-15
-20
Rtl, RETURN LOSS (dB)
-25 0123456789
925 MHz
960 MHz
Pout, OUTPUT POWER (W)
945 MHz
Output Power vs. Bias Current
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
0 100 200 300 400
6/14
925 MHz
960 MHz
IDQ, BI A S CURRENT (m A )
945 MHz
Vdd=28V Pin= 22.7 dBm
Drain Efficiency vs. Bias Current
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400
925 MHz
945 MHz
960 MHz
IDQ, BI A S CURRENT (m A )
Vdd=28V Pin= 22.7 dBm
Page 7
TYPICAL PERFORMANCE Output Power vs. Supply Voltage
PD57006 - PD57006S
Drain Efficiency vs. Supply Voltage
8
7
6 5
4
3
Pout, OUTPUT POWER (W)
2
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
960 MHz
Idq=70 mA Pin= 22.7 dBm
Output Power vs. Gate-Source Voltage
9 8 7 6 5 4 3 2
Pout, OUTPUT POWER (W)
1
0
01234
VGS, GATE-SOURCE VOLTAGE (V )
945 MHz
925 MHz
Vdd=28V Pin= 22.7 dBm
960 MHz
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
10 12 14 16 18 20 22 24 26 28 30
960 MHz
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
Idq=70 mA Pin= 22.7 dBm
7/14
Page 8
PD57006 - PD57006S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1, B2 C1, C2, C11, C14 47 pF, 100B ATC CHIP CAPACITOR R3 4.7 m CHIP RESISTOR 1 W C5 C4, C12 .01 µF, VENKEL CHIP CAPACITOR Z1 0.430” X 0.084” MICROSTRIP
C3, C13
C10
C9
C7, C8
L1
N1, N2 TYPE N FLANGE MOUNT BOARD
R1 100 CHIP RESISTOR 1 W
SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446)
1000 pF, 100B ATC CHIP CAPACITOR
220 µF, 63 V ELECTROLYTIC CAPACITOR
100 pF, 100B ATC CHIP CAPACITOR
6.2 pF, 100B ATC CHIP CAPACITOR
08-8 pF VARIABLE CAPACITOR JOHANSON
15 nH, 3 TURN, .140” DIA. 22 AWG BELDEN 8021 BLIS PER WIRE
R2 18 k CHIP RESISTOR 1 W
R4 12 k CHIP RESISTOR 1 W
Z2 0.1.186” X 1.120” MICROSTRIP
Z3 1.273” X 0.565” MICROSTRIP
Z4 0.770” X 0.171” MICROSTRIP
Z5 0.880” X 0.105” MICROSTRIP
Z6 1.200” X 0.084” MICROSTRIP
ROGER ULTRA LAM 2000 THK
ε
0.030” SIDES
= 2.55 2oz ED Cu BOTH
r
8/14
Page 9
TEST CIRCUIT PHOTOMASTER
PD57006 - PD57006S
4 inches
TEST CIRCUIT
6.4 inches
TRANSMISSION LINE DIMENSIONS
Z1 0.430” X 0.084” MICROSTRIP Z4 1.273” X 0.565” MICROSTRIP Z7 0.778” X 0.150” MICROSTRIP Z2 0.220” X 0.155” MICROSTRIP Z5 0.195” X 0.250” MICROSTRIP Z8 0.120” X 0.171” MICROSTRIP Z3 0.960” X 0.120” MICROSTRIP Z6 0.555” X 0.171” MICROSTRIP Z8 1.200” X 0.084” MICROSTRIP
9/14
Page 10
PD57006 - PD57006S
COMMON SOURCE S-PARAMETER (PD57006)
(V
= 13.5V IDS = 0.2A)
DS
FREQ
IS11I
IS
∠Φ
S
11
I
21
∠Φ
S
21
IS
I
12
∠Φ
S
12
IS
I
22
S
22
(MHz)
50 0.895 -79 29.76 130 0.033 39 0.814 -70 100 0.786 -118 18.68 102 0.041 13 0.699 -106 150 0.765 -134 12.61 90 0.042 2 0.621 -121 200 0.767 -143 9.22 80 0.041 -8 0.629 -132 250 0.778 -151 7.50 73 0.041 -15 0.629 -136 300 0.790 -156 6.09 66 0.038 -22 0.650 -141 350 0.794 -159 5.23 59 0.038 -28 0.685 -143 400 0.806 -162 4.39 54 0.036 -32 0.700 -147 450 0.814 -165 3.82 48 0.035 -37 0.724 -149 500 0.826 -167 3.30 43 0.033 -41 0.749 -152 550 0.836 -170 2.90 38 0.031 -45 0.771 -154 600 0.843 -172 2.59 34 0.029 -49 0.785 -1564 650 0.850 -174 2.32 31 0.028 -53 0.803 -158 700 0.857 -176 2.09 27 0.027 -56 0.814 -1598 750 0.863 -178 1.91 23 0.025 -59 0.829 -162 800 0.869 -180 1.76 20 0.024 -62 0.839 -163 850 0.869 178 1.61 16 0.023 -64 0.847 -165 900 0.872 177 1.50 13 0.022 -68 0.859 -166 950 0.875 175 1.40 10 0.020 -72 0.868 -168
1000 0.873 173 1.32 7 0.020 -75 0.873 -169 1050 0.875 172 1.24 3 0.019 -78 0.885 -171 1100 0.872 170 1.18 0 0.019 -81 0.886 -172 1150 0.871 168 1.12 -4 0.018 -86 0.889 -174 1200 0.864 166 1.08 -7 0.017 -92 0.890 -175 1250 0.861 164 1.03 -11 0.016 -97 0.895 -177 1300 0.855 163 1.00 -15 0.016 -102 0.896 -178 1350 0.847 160 0.96 -19 0.015 -108 0.895 -180 1400 0.835 158 0.93 -23 0.015 -111 0.897 179 1450 0.818 156 0.89 -27 0.015 -120 0.896 178 1500 0.797 153 0.88 -31 0.016 -128 0.899 177
∠Φ
10/14
Page 11
COMMON SOURCE S-PARAMETER (PD57006)
= 28V IDS = 0.2A)
(V
DS
PD57006 - PD57006S
FREQ
IS11IIS
∠Φ
S
IIS
21
∠Φ
S
I
12
∠Φ
S
12
IS
I
22
S
(MHz)
50 0.953 -65 31.01 138 0.022 48 0.780 -52 100 0.855 -104 21.59 112 0.030 20 0.677 -85 150 0.823 -124 15.49 96 0.031 7 0.601 -101 200 0.818 -136 11.84 85 0.031 -5 0.605 -113 250 0.824 -144 9.54 75 0.031 -12 0.614 -118 300 0.832 -150 7.85 67 0.029 -19 0.635 -126 350 0.835 -155 6.48 59 0.029 -25 0.676 -129 400 0.845 -159 5.51 53 0.027 -31 0.696 -134 450 0.850 -162 4.69 4 0.025 -36 0.722 -137 500 0.860 -165 4.11 43 0.024 -41 0.748 -141 550 0.866 -168 3.58 38 0.023 -44 0.773 -144 600 0.870 -170 3.21 33 0.021 -48 0.790 -147 650 0.878 -172 2.88 29 0.019 -53 0.808 -150 700 0.883 -174 2.60 25 0.019 -53 0.821 -152 750 0.887 -177 2.37 21 0.016 -59 0.838 -154 800 0.890 -179 2.16 17 0.017 -60 0.846 -156 850 0.890 179 1.98 13 0.015 -62 0.856 -158 900 0.888 178 1.82 9 0.014 -67 0.869 -160 950 0.892 176 1.69 6 0.013 -70 0.879 -162
1000 0.894 174 1.57 3 0.013 -72 0.886 -163 1050 0.892 172 1.47 0 0.011 -76 0.892 -165 1100 0.888 170 1.36 -3 0.011 -80 0.894 -166 1150 0.885 169 1.28 -6 0.010 -86 0.899 -168 1200 0.880 167 1.21 -9 0.009 -89 0.897 -170 1250 0.872 165 1.16 -11 0.009 -95 0.901 -171 1300 0.864 163 1.11 -14 0.008 -103 0.906 -173 1350 0.856 161 1.09 -17 0.007 -110 0.905 -174 1400 0.844 159 1.06 -20 0.007 -118 0.905 -176 1450 0.824 156 1.06 -23 0.007 -129 0.906 -177 1500 0.806 154 1.04 -29 0.008 -143 0.910 -178
∠Φ
22
11/14
Page 12
PD57006 - PD57006S
PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA
DIM.
A1 0 0.05 0.1 0. 0.0019 0.0038 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 13.85 14.1 14.35 0.544 0.555 0.565 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
L 0.8 1 1.1 0.030 0.039 0.042
R1 0.25 0.01 R2 0.8 0.031
T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 10 deg 10 deg
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
12/14
CRITICAL DIMENSIONS:
- Stand-off (A1)
- Overall width (L)
Page 13
PD57006 - PD57006S
PowerSO-10RF Straight Lead MECHANICAL DATA
DIM.
A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047 R1 0.25 0.01 R2 0.8 0.031
T1 6 deg 6 deg T2 10 deg 10 deg
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
13/14
Page 14
PD57006 - PD57006S
Information furnished is believed to be ac curate and reliable. Howev er, STMicroel ectronics assumes no resp onsibility for t he consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any pat ent or pat ent rights of STMicroelectron i cs. Specifications mentioned in this publicatio n are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as cri tical comp onents in life support devi ces or systems wi thout express written approval of STM i croelect ronics.
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