Page 1
PD57006
PD57006S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 6 W with 15 dB gain @ 945 MHz / 28V
OUT
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD 57006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF . PD57006’s superior linearity performance makes it an ideal solution for car mobile radio.
The LdmoST
PowerSO-10RF
(formed lead)
ORDER CODE
PD57006
Plastic FAMILY
BRANDING
PD57006
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been spe cially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD57006S
PowerSO-10R F
(straight lead)
BRANDING
PD57006S
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 ° C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 1 A
Power Dissipation (@ Tc = 70° C) 20 W
Storage Temperature -65 to +150 ° C
CASE
= 25° C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 5 ° C/W
1/14 March, 21 2003
Page 2
PD57006 - PD57006S
ELECTRICAL SPECIFICATION (T
CASE
= 25° C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
VGS = 0 V ID = 10 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V
= 70 mA
ID
VGS = 10 V ID = 0.5 A
VDS = 10 V ID = 800 mA
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
65
1 µ A
1 µ A
2.0 5.0 V
0.9 V
0.58 mho
27 pF
14 pF
0.9 pF
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
G
P
η
D
Load
mismatch
VDD = 28 V IDQ = 70 mA f = 945 MHz
V
= 28 V IDQ = 70 mA P
DD
VDD = 28 V IDQ = 70 mA P
= 28 V IDQ = 70 mA P
V
DD
= 6 W f = 945 MHz
OUT
= 6 W f = 945 MHz
OUT
= 6 W f = 945 MHz
OUT
ALL PHASE ANGLES
6W
14 15 dB
45 50 %
10:1 VSWR
PIN CONNECTION
SOURCE
GATE
SC15200
PD57006
(Ω )Z
FREQ. MHz
Z
IN
925 6.040 - j 0.936 6.273 + j 8.729
945 5.886 - j 2.326 6.578 + j 5.999
960 6.056 - j 3.522 7.215 + j 7.539
DRAIN
DL
IMPEDANCE DATA
(Ω )
D
Typical Input
Impeda nce
Typical Drain
Load Imped ance
G
Zin
S
SC13140
PD57006S
(Ω )Z
FREQ. MHz
Z
IN
925 3.794 - j 1.632 3.513 + j 10.81
945 4.039 - j 2.300 3.862 + j 10.58
960 4.250 - j 3.791 4.005 + j 11.34
Z
DL
(Ω )
DL
2/14
Page 3
TYPICAL PERFORMANCE
0 4 8 12 16 20 24 28
VDD, DRAIN VOLTAGE (V)
0.1
1
10
100
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Capacitance vs. Drain Voltage
Gate-Source Voltage vs. Case Temperature
PD57006 - PD57006S
Drain Current vs. Gate-Source Voltage
1
0.8
0.6
0.4
Id, DRAIN CURRENT (A)
0.2
0
2 2.5 3 3.5 4 4.5 5 5.5
VGS, GATE-SOURCE VOLTAGE (V)
Vds=10 V
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
VGS, GATE-SOURCE VOLTAGE(Normalized)
-25 0 25 50 75 100
Vds=10 V
Tc, CASE TEMPERATURE (°C)
Id=.05 A
Id=1.5 A
Id=1 A
Id=.6 A
Id=.2 A
3/14
Page 4
PD57006 - PD57006S
TYPICAL PERFORMANCE
Output Power vs. Input Power
PD57006
Power Gain vs. Output Power
9
8
7
6
5
4
3
2
Pout, OUTPUT POWER (W)
1
0
0 0.1 0.2 0.3 0.4
Pin, INPUT POWER (W)
925 MHz
960 MHz
945 MHz
Vdd=28V
Idq=70mA
Drain Efficiency vs. Output Power
60
50
40
945 MHz
30
20
Nd, DRAIN EFFICIENCY (%)
10
0123456789
Pout, OUTPUT POWER (W )
925 MHz
960 MHz
Vdd=28V
Idq=70mA
18
16
14
12
10
8
Pg, POWER GAIN (dB)
6
4
0123456789
945 MHz
Pout, OUTPUT POWER (W)
925 MHz
960 MHz
Vdd=28V
Idq=70mA
Inpu t R e turn L o s s vs. Out p u t Powe r
0
-5
-10
-15
Rtl, RETURN LOSS (dB)
-20
-25
0123456789
960 MHz
925 MHz
Pout, OUTPUT POWER (W )
945 MHz
Vdd=28V
Idq=70mA
Output Power vs. Bias Current
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
0 100 200 300 400
4/14
925 MHz
IDQ, BIAS CURRENT (mA)
945 MHz
960 MHz
Vdd=28V
Pin= 23.6 dBm
Drain Efficiency vs. Bias Current
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400
945 MHz
925 MHz
IDQ, BIAS CURRENT (mA)
960 MHz
Vdd=28V
Pin= 23.6 dBm
Page 5
TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
PD57006 - PD57006S
Drain Efficiency vs. Supply Voltage
8
7
6
5
4
3
Pout, OUTPUT POWER (W)
2
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
960 MHz
Idq=70 mA
Pin= 23.6 dBm
Output Power vs. Gate-Source Voltage
9
8
7
6
5
4
3
2
Pout, OUTPUT POWER (W)
1
0
01234
VGS, G ATE-SOURCE VOLTAGE (V)
925 MHz
945 MHz
Vdd=28V
Pin= 23.6 dBm
960 MHz
60
925 MHz
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
960 MHz
10 12 14 16 18 20 22 24 26 28 30
945 MHz
VDD, SUPPLY VOLTAGE (V)
Idq= 70 mA
Pin= 23.6 dBm
5/14
Page 6
PD57006 - PD57006S
TYPICAL PERFORMANCE
Output Power vs. Input Power PD57006S
Power Gain vs. Output Power
9
8
7
6
5
4
3
2
Pout, OUTPUT POWER (W)
1
0
0 0.1 0.2 0.3 0.4
925 MHz
945 MHz
Pin, INPUT POWER (W)
960 MHz
Vdd=28V
Idq=70mA
Drain Efficiency vs. Output Power
60
945 MHz
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0123456789
960 MHz
Pout, OUTPUT POWER (W)
925 MHz
Vdd=28V
Idq=70mA
18
16
14
12
10
8
Pg, POWER GAIN (dB)
Vdd=28V
Idq=70mA
6
4
0123456789
945 MHz
Pout, OUTPUT POWER (W)
925 MHz
960 MHz
Inpu t R e turn L o s s vs. Out p u t Powe r
0
Vdd=28V
-5
Idq=70mA
-10
-15
-20
Rtl, RETURN LOSS (dB)
-25
0123456789
925 MHz
960 MHz
Pout, OUTPUT POWER (W)
945 MHz
Output Power vs. Bias Current
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
0 100 200 300 400
6/14
925 MHz
960 MHz
IDQ, BI A S CURRENT (m A )
945 MHz
Vdd=28V
Pin= 22.7 dBm
Drain Efficiency vs. Bias Current
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400
925 MHz
945 MHz
960 MHz
IDQ, BI A S CURRENT (m A )
Vdd=28V
Pin= 22.7 dBm
Page 7
TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
PD57006 - PD57006S
Drain Efficiency vs. Supply Voltage
8
7
6
5
4
3
Pout, OUTPUT POWER (W)
2
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
960 MHz
Idq=70 mA
Pin= 22.7 dBm
Output Power vs. Gate-Source Voltage
9
8
7
6
5
4
3
2
Pout, OUTPUT POWER (W)
1
0
01234
VGS, GATE-SOURCE VOLTAGE (V )
945 MHz
925 MHz
Vdd=28V
Pin= 22.7 dBm
960 MHz
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
10 12 14 16 18 20 22 24 26 28 30
960 MHz
VDD, SUPPLY VOLTAGE (V)
945 MHz
925 MHz
Idq=70 mA
Pin= 22.7 dBm
7/14
Page 8
PD57006 - PD57006S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1, B2
C1, C2, C11, C14 47 pF, 100B ATC CHIP CAPACITOR R3 4.7 mΩ CHIP RESISTOR 1 W
C5
C4, C12 .01 µ F, VENKEL CHIP CAPACITOR Z1 0.430” X 0.084” MICROSTRIP
C3, C13
C10
C9
C7, C8
L1
N1, N2 TYPE N FLANGE MOUNT BOARD
R1 100 Ω CHIP RESISTOR 1 W
SHORT FERRITE BEAD, FAIR RITE
PRODUCTS (2743021446)
1000 pF, 100B ATC CHIP
CAPACITOR
220 µ F, 63 V ELECTROLYTIC
CAPACITOR
100 pF, 100B ATC CHIP
CAPACITOR
6.2 pF, 100B ATC CHIP
CAPACITOR
08-8 pF VARIABLE CAPACITOR
JOHANSON
15 nH, 3 TURN, .140” DIA. 22 AWG
BELDEN 8021 BLIS PER WIRE
R2 18 kΩ CHIP RESISTOR 1 W
R4 12 kΩ CHIP RESISTOR 1 W
Z2 0.1.186” X 1.120” MICROSTRIP
Z3 1.273” X 0.565” MICROSTRIP
Z4 0.770” X 0.171” MICROSTRIP
Z5 0.880” X 0.105” MICROSTRIP
Z6 1.200” X 0.084” MICROSTRIP
ROGER ULTRA LAM 2000 THK
ε
0.030”
SIDES
= 2.55 2oz ED Cu BOTH
r
8/14
Page 9
TEST CIRCUIT PHOTOMASTER
PD57006 - PD57006S
4 inches
TEST CIRCUIT
6.4 inches
TRANSMISSION LINE DIMENSIONS
Z1 0.430” X 0.084” MICROSTRIP Z4 1.273” X 0.565” MICROSTRIP Z7 0.778” X 0.150” MICROSTRIP
Z2 0.220” X 0.155” MICROSTRIP Z5 0.195” X 0.250” MICROSTRIP Z8 0.120” X 0.171” MICROSTRIP
Z3 0.960” X 0.120” MICROSTRIP Z6 0.555” X 0.171” MICROSTRIP Z8 1.200” X 0.084” MICROSTRIP
9/14
Page 10
PD57006 - PD57006S
COMMON SOURCE S-PARAMETER (PD57006)
(V
= 13.5V IDS = 0.2A)
DS
FREQ
IS11I
IS
∠Φ
S
11
I
21
∠Φ
S
21
IS
I
12
∠Φ
S
12
IS
I
22
S
22
(MHz)
50 0.895 -79 29.76 130 0.033 39 0.814 -70
100 0.786 -118 18.68 102 0.041 13 0.699 -106
150 0.765 -134 12.61 90 0.042 2 0.621 -121
200 0.767 -143 9.22 80 0.041 -8 0.629 -132
250 0.778 -151 7.50 73 0.041 -15 0.629 -136
300 0.790 -156 6.09 66 0.038 -22 0.650 -141
350 0.794 -159 5.23 59 0.038 -28 0.685 -143
400 0.806 -162 4.39 54 0.036 -32 0.700 -147
450 0.814 -165 3.82 48 0.035 -37 0.724 -149
500 0.826 -167 3.30 43 0.033 -41 0.749 -152
550 0.836 -170 2.90 38 0.031 -45 0.771 -154
600 0.843 -172 2.59 34 0.029 -49 0.785 -1564
650 0.850 -174 2.32 31 0.028 -53 0.803 -158
700 0.857 -176 2.09 27 0.027 -56 0.814 -1598
750 0.863 -178 1.91 23 0.025 -59 0.829 -162
800 0.869 -180 1.76 20 0.024 -62 0.839 -163
850 0.869 178 1.61 16 0.023 -64 0.847 -165
900 0.872 177 1.50 13 0.022 -68 0.859 -166
950 0.875 175 1.40 10 0.020 -72 0.868 -168
1000 0.873 173 1.32 7 0.020 -75 0.873 -169
1050 0.875 172 1.24 3 0.019 -78 0.885 -171
1100 0.872 170 1.18 0 0.019 -81 0.886 -172
1150 0.871 168 1.12 -4 0.018 -86 0.889 -174
1200 0.864 166 1.08 -7 0.017 -92 0.890 -175
1250 0.861 164 1.03 -11 0.016 -97 0.895 -177
1300 0.855 163 1.00 -15 0.016 -102 0.896 -178
1350 0.847 160 0.96 -19 0.015 -108 0.895 -180
1400 0.835 158 0.93 -23 0.015 -111 0.897 179
1450 0.818 156 0.89 -27 0.015 -120 0.896 178
1500 0.797 153 0.88 -31 0.016 -128 0.899 177
∠Φ
10/14
Page 11
COMMON SOURCE S-PARAMETER (PD57006)
= 28V IDS = 0.2A)
(V
DS
PD57006 - PD57006S
FREQ
IS11II S
∠Φ
S
II S
21
∠Φ
S
I
12
∠Φ
S
12
IS
I
22
S
(MHz)
50 0.953 -65 31.01 138 0.022 48 0.780 -52
100 0.855 -104 21.59 112 0.030 20 0.677 -85
150 0.823 -124 15.49 96 0.031 7 0.601 -101
200 0.818 -136 11.84 85 0.031 -5 0.605 -113
250 0.824 -144 9.54 75 0.031 -12 0.614 -118
300 0.832 -150 7.85 67 0.029 -19 0.635 -126
350 0.835 -155 6.48 59 0.029 -25 0.676 -129
400 0.845 -159 5.51 53 0.027 -31 0.696 -134
450 0.850 -162 4.69 4 0.025 -36 0.722 -137
500 0.860 -165 4.11 43 0.024 -41 0.748 -141
550 0.866 -168 3.58 38 0.023 -44 0.773 -144
600 0.870 -170 3.21 33 0.021 -48 0.790 -147
650 0.878 -172 2.88 29 0.019 -53 0.808 -150
700 0.883 -174 2.60 25 0.019 -53 0.821 -152
750 0.887 -177 2.37 21 0.016 -59 0.838 -154
800 0.890 -179 2.16 17 0.017 -60 0.846 -156
850 0.890 179 1.98 13 0.015 -62 0.856 -158
900 0.888 178 1.82 9 0.014 -67 0.869 -160
950 0.892 176 1.69 6 0.013 -70 0.879 -162
1000 0.894 174 1.57 3 0.013 -72 0.886 -163
1050 0.892 172 1.47 0 0.011 -76 0.892 -165
1100 0.888 170 1.36 -3 0.011 -80 0.894 -166
1150 0.885 169 1.28 -6 0.010 -86 0.899 -168
1200 0.880 167 1.21 -9 0.009 -89 0.897 -170
1250 0.872 165 1.16 -11 0.009 -95 0.901 -171
1300 0.864 163 1.11 -14 0.008 -103 0.906 -173
1350 0.856 161 1.09 -17 0.007 -110 0.905 -174
1400 0.844 159 1.06 -20 0.007 -118 0.905 -176
1450 0.824 156 1.06 -23 0.007 -129 0.906 -177
1500 0.806 154 1.04 -29 0.008 -143 0.910 -178
∠Φ
22
11/14
Page 12
PD57006 - PD57006S
PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA
DIM.
A1 0 0.05 0.1 0. 0.0019 0.0038
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 13.85 14.1 14.35 0.544 0.555 0.565
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
L 0.8 1 1.1 0.030 0.039 0.042
R1 0.25 0.01
R2 0.8 0.031
T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg
T1 6 deg 6 deg
T2 10 deg 10 deg
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
12/14
CRITICAL DIMENSIONS:
- Stand-off (A1)
- Overall width (L)
Page 13
PD57006 - PD57006S
PowerSO-10RF Straight Lead MECHANICAL DATA
DIM.
A1 1.62 1.67 1.72 0.064 0.065 0.068
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
R1 0.25 0.01
R2 0.8 0.031
T1 6 deg 6 deg
T2 10 deg 10 deg
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
13/14
Page 14
PD57006 - PD57006S
Information furnished is believed to be ac curate and reliable. Howev er, STMicroel ectronics assumes no resp onsibility for t he consequ ences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any pat ent or pat ent rights of STMicroelectron i cs. Specifications mentioned in this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support devi ces or systems wi thout express written approval of STM i croelect ronics.
The ST log o i s registered trademark of STMicro el ectronics
2003 STMicroelectronics - All Right s Reserved
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