Datasheet PD55025S Datasheet (SGS Thomson Microelectronics)

PD55025

PD55025S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 25 W with 14.5 dB gain @ 500 MHz /

OUT

12.5 V

• NEW RF PLASTIC PACKAGE
DESCRIPTION

The PD55025 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD 55025 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF . PD55025’s
superior linearity performance makes it an ideal
solution for car mobile radio.

The LdmoST

PowerSO-10RF

(formed lead)

ORDER CODE

PD55025

Plastic FAMILY

BRANDING

PD55025

The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. I t has b een
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.

ORDER CODE

PD55025S

PowerSO-10R F

(straight lead)

BRANDING

PD55025S

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

Drain-Source Voltage 40 V
Gate-Source Voltage ± 20 V
Drain Current 7 A
Power Dissipation (@ Tc = 70°C) 79 W

Storage Temperature -65 to +150 °C

CASE

= 25°C)

THERMA L D ATA

R

th(j-c)

Junction -Case Thermal Resistance 1.2 °C/W

1/13March, 21 2003

PD55025 - PD55025S

ELECTRICAL SPECIFICATION (T

CASE

= 25°C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

C
C
C

FS

ISS
OSS
RSS

VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 100 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz

1 µA
1 µA

2.0 5.0 V

0.7 0.8 V

2.5 mho
86 pF
76 pF

5.8 pF

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

out

G

P

η

D

Load

mismatch

VDD = 12.5 V IDQ = 200 mA f = 500 MHz
VDD = 12.5 V IDQ = 200 mA P
VDD = 12.5 V IDQ = 200 mA P

= 12.5 V IDQ = 200 mA P

V

DD

= 25 W f = 500 MHz

OUT

= 25 W f = 500 MHz

OUT

= 25 W f = 500 MHz

OUT

ALL PHASE ANGLES

25 W

14.5 dB
50 %

20:1 VSWR

GATE

SC15200

PIN CONNECTION

PD55025S

SOURCE

DRAIN

SC13140

IMPEDANCE DATA

Z

FREQ. MHz

175 3.20 - j 4.41 1.56 + j 2.14
480 1.01 - j 1.67 1.06 + j 0.22
500 0.93 - j 1.53 1.12 + j 0.20

(Ω)Z

IN

Typical Input
Impeda nce

G

Zin

(Ω)

DL

D

Z

Typical Drain
Load Imped ance

S

DL

2/13

520 0.88 - j 1.98 1.07 + j 0.83

TYPICAL PERFORMANCE

q

Capacitance vs. Supply Voltage

1000

Ciss

100

Coss

C (pF)

(PD55025S)

PD55025 - PD55025S

Drain Current vs Gate-Source Voltage

6

Vds = 10 V

5

4

3

Id (A)

10

Crss

f = 1 MHz

1

0 4 8 1216202428

Vds (V)

Gate-Source Voltage vs Case Temperature

1.04

1.02
Id = 5 A

1.00

Id (A)

0.98

0.96

Vds = 10 V

0.94

-25 0 25 50 75 100
Vgs (V)

Id = 4 A

Id = 3 A

Id = 2 A
Id = 1 A

Id = .5 A

2

1

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Vgs (V)

Output Power vs Input Power

45

40

35

30

25

20

Pout (W)

15

10

5

0

0.00 1.00 2.00 3.00 4.00 5.00 6.00

480 MH z

Pin (W)

500 MHz

520 MHz

Vdd = 12.5 V
Id

= 200 mA

Output Power vs Input Power

45

40

35

30

25

20

Pout (W)

15

10

Vdd = 13.8 V

Vdd = 12 .5 V

5

0

0123456

Pin (W)

f = 520 MHz
Idq = 200 mA

Powe r Ga i n vs Outpu t Pow er

18

16

14

12

10

Gp (dB)

8

6

4

2

0

0 1020304050

Pout (W)

520 MHz

Vdd = 12.5 V
Idq = 200 mA

480 MHz

500 MHz

3/13

PD55025 - PD55025S

TYPICAL PERFORMANCE
Drain Efficiency vs Output Power

(PD55025S)

Input Return Loss vs Output Power

70

60

50

40

Nd (%)

30

20

10

0

0 1020304050

500 MHz

480, 520 MHz

Pout (W)

Vdd = 12.5 V
Idq = 200 mA

Output Power vs Bias Curent

40

35

30

25

20

Pout (W)

15

10

5

0

0 200 400 600 800 100 0 1200

Idq (m A)

480 MHz

520 MHz

Vdd = 12.5 V
Pin = 0.85 W

500 MHz

0

-5

-10

-15

-20

RL (dB)

-25

-30

-35

-40
0 1020304050

480 MHz

500 MHz

520 MHz

Pout (W)

Vdd = 12.5 V
Idq = 200 mA

Drain Efficiency vs Bias Current

60

50

40

30

Nd (%)

20

10

0

0 200 400 600 800 1000 1200

Idq ( m A)

500 MHz

520 MHz

Vdd = 12.5 V
Pin = 0 . 85 W

480 MH z

Output Power vs Supply Voltage

35

30

25

20

Pout (W)

15

10

5

0

5 7 9 1113151719

Vdd ( V)

4/13

520 MHz

480 MHz

500 MHz

I dq = 200 mA
Pin = 0.85 W

Drain Efficiency vs Supply Voltage

70

60

50

40

Nd (%)

30

20

10

0

6 8 10 12 14 16 18

500 MHz

500 MHz

520 MHz

Vdd (V)

Idq = 200 mA
Pin = 0.85 W

TYPICAL PERFORMANCE

g

)

(PD55025S)

Output Power vs Gate-Source Voltage

PD55025 - PD55025S

Output Power vs Input Power (f = 175 MHz)

30

25

20

15

Pout (W)

500 MHz

10

5

0

01234

480 MHz

520 MHz

V

s (V

Vdd = 12.5 V
Pin = 0.85 W

Power Gain vs Output Power (f = 175 MHz)

30

25

20

45

40

35

30

25

Pout (W)

20

15

10

5

0

0 0.5 1 1.5 2 2.5

Pin (W)

Vdd = 12.5 V
I dq = 200 mA

Drain Efficiency vs Output Power (f = 175 MHz)

80

70

60

50

15

Gp (W)

10

5

0

0 1020304050

Pout (W)

Vdd = 12.5 V
Idq = 200 mA

Input Return Loss vs Output Power (f = 175 MHz)

0

-5

-10

-15

RL (dB)

-20

-25

Vdd = 12.5 V
Idq = 200 mA

40

Nd (%)

30

20

10

0

0 1020304050

Pout (W)

Vdd = 12.5 V
Idq = 200 m A

-30
0 1020304050

Pout (W)

5/13

PD55025 - PD55025S

500 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING)

VGG

B1

B2

+

+

C10

RF

INPUT

C9

C1

R3

C8

Z2

Z1 Z3

C2

C3

R2

R1

C4

C5

C7

Z4

C6

DUT

C19

L1

Z6

Z5

C12

Z7

C11

C18 C17 C16

Z9

C14

C15

Z8

C13

N2

OUTPUT

RF

500 MHz TEST CIRCUIT COMPONENT PART LIST

COMPONENT DESCRIPTIO N

B1,B2 FERRITE BEAD
C1,C13 300 pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C12,C13,C14 1 to 20 pF TRIMMER CAPACITOR
C6 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7, C19 120 pF 100 mil CHIP CAPACITOR
C10, C16 10 µF, 50 V ELECTROLYTIC CAPACITOR
C9, C17 0.1 mF, 100 mil CHIP CAP
C8, C18 1.000 pF 100 mil CHIP CAP
C5, C11 33 pF, 100 mil CHIP CAP
L1 56 nH, 7 TURN, COILCRAFT
N1, N2 TYPE N FLANGE MOUNT
R1 15 Ω, 1 W CHIP RESISTOR
R2 1 KΩ, 1 W CHIP RESISTOR
R3 33 KΩ, 1 W CHIP RESISTOR
Z1 0.471” X 0.080” MICROSTRIP

Z2 1.082” X 0.080” MICROSTRIP
Z3 0.372” X 0.080” MICROSTRIP
Z4,Z5 0.260” X 0.223” MICROSTRIP
Z6 0.050” X 0.080” MICROSTRIP
Z7 0.551” X 0.080” MICROSTRIP
Z8 0.825” X 0.080” MICROSTRIP
Z9 0.489” X 0.080” MICROSTRIP

BOARD

ROGER, ULTRA LAM 2000 THK 0.030”,

εr = 2.55 2oz. ED cu 2 SIDES.

VDD

6/13

500 MHz TEST CIRCUIT

PD55025 - PD55025S

500 MHz TEST CIRCUIT PHOTOMASTER

BIAS

VDD

GND

6.4 inches

4 inches

7/13

PD55025 - PD55025S

175 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING)

FB2FB1

C16

C16

FB2FB1

L1

L1

R5

R5

+

+

V

V

GG

GG

C8

C8

)

))

RF

RF
INPUT

INPUT

C9

C9

C1

C1

C10

C10

R1

R1

R2

R2

C14

C14

C15

C15

R3

R3

C2

C2

C3

C3

R4

R4

C7

C7

175 MHz TEST CIRCUIT COMPONENT PART LIST

COMPONENT DESCRIPTION

C1, C6 300 pF CHIP CAPACITOR
C2, C3 91 pF CHIP CAPACITOR
C4, C14 75 pF CHIP CAPACITOR
C5 1-20 pF TRIMMER CAPACITOR
C7 .01 µF MOLDED CAPACITOR
C8, C13 10 µF ELECTROLYTIC CAPACITOR
C9, C12 .1 µF CHIP CAPACITOR
C10, C11 1000 pF CHIP CAPACITOR
C15, C16 1200 pF CHIP CAPACITOR
FB1, FB2 FERRITE BEAD
R1 33 KΩ CHIP RESISTOR
R2 17 Ω CHIP RESISTOR
R3 15 Ω CHIP RESISTOR
R4 47 Ω CHIP RESISTOR
R5 220 Ω CHIP RESISTOR
L1 5 TURN, 16 AWG MAGNET WIRE, ID = .40” ,INDUCTOR

BOARD

ROGER, ULTRA LAM 2000, THK 0.030”,

εr = 2.55 2oz. ED cu 2 SIDES.

C11 C12

C11 C12

C4 C5

C4 C5

+

+

V

V

DD

DD

C13

C13

)

)

C6

C6

RF

RF
OUTPUT

OUTPUT

8/13

PD55025 - PD55025S

COMMON SOURCE S-PARAMETER (PD55025S)

= 12.5 V ID = 500 mA)

(V

DS

FREQ

IS11I

∠Φ

S

11

IS

I

21

∠Φ

S

21

(MHz)

50 0.837 -162 13.33 89 0.018 -1 0.780 -168
100 0.846 -169 6.51 76 0.017 -12 0.803 -172
150 0.862 -171 4.15 66 0.016 -19 0.831 -172
200 0.878 -173 2.93 58 0.015 -26 0.859 -172
250 0.895 -174 2.20 51 0.013 -31 0.874 -172
300 0.910 -174 1.71 45 0.012 -36 0.886 -173
350 0.921 -175 1.36 40 0.010 -40 0.892 -173
400 0.932 -176 1.11 35 0.009 -42 0.897 -175
450 0.941 -177 0.92 31 0.008 -43 0.915 -176
500 0.946 -178 0.78 27 0.007 -44 0.932 -177
550 0.953 -178 0.66 24 0.006 -43 0.946 -178
600 0.957 -179 0.57 21 0.005 -42 0.964 -179
650 0.960 -180 0.50 18 0.004 -39 0.975 -178
700 0.964 180 0.44 16 0.004 -34 0.976 -179
750 0.966 179 0.39 14 0.003 -29 0.981 -179
800 0.968 178 0.95 12 0.002 -15 0.979 -179
850 0.970 178 0.31 10 0.002 -2 0.964 -179
900 0.971 177 0.28 8 0.002 16 0.960 180
950 0.972 177 0.26 6 0.002 34 0.953 179

1000 0.972 176 0.23 5 0.003 45 0.940 178

IS

I

12

∠Φ

S

12

IS

I

22

∠Φ

S

22

COMMON SOURCE S-PARAMETER (PD55025S)
(V

= 12.5 V ID = 1.5 A)

DS

FREQ

IS11I

∠Φ

S

11

IS

I

21

∠Φ

S

21

(MHz)

50 0.876 -164 13.87 90 0.013 1 0.823 -172
100 0.880 -172 6.87 79 0.012 -7 0.838 -175
150 0.887 -174 4.46 71 0.012 -13 0.855 -176
200 0.895 -175 3.22 64 0.011 -18 0.873 -175
250 0.905 -176 2.47 58 0.010 -22 0.879 -175
300 0.915 -176 1.96 52 0.009 -25 0.885 -175
350 0.922 -177 1.60 47 0.009 -28 0.886 -175
400 0.931 -178 1.32 42 0.008 -30 0.889 -177
450 0.938 -178 1.11 38 0.007 -31 0.906 -178
500 0.942 -179 0.95 34 0.006 -31 0.923 -179
550 0.948 -179 0.82 31 0.005 -30 0.937 -179
600 0.952 -180 0.71 28 0.005 -27 0.956 -179
650 0.954 180 0.63 25 0.004 -22 0.967 -179
700 0.959 179 0.55 22 0.003 -16 0.969 -179
750 0.961 178 0.49 20 0.003 -6 0.973 -179
800 0.963 178 0.45 17 0.003 3 0.970 -179
850 0.966 177 0.40 15 0.003 17 0.956 -180
900 0.967 177 0.36 13 0.003 27 0.952 179
950 0.968 176 0.33 11 0.003 38 0.945 179

1000 0.968 176 0.30 9 0.003 45 0.933 177

IS

I

12

∠Φ

S

12

IS

I

22

∠Φ

S

22

9/13

PD55025 - PD55025S
COMMON SOURCE S-PARAMETER (PD55025S)

= 12.5 V ID = 3 A)

(V

DS

FREQ

IS11I

∠Φ

S

11

IS

I

21

∠Φ

S

21

(MHz)

50 0.890 -165 13.19 91 0.012 2 0.837 -174
100 0.892 -172 6.55 81 0.011 -6 0.846 -176
150 0.898 -174 4.28 73 0.011 -12 0.865 -176
200 0.904 -175 3.11 66 0.010 -15 0.879 -176
250 0.913 -176 2.39 60 0.010 -20 0.883 -176
300 0.921 -177 1.91 54 0.009 -23 0.089 -176
350 0.926 -177 1.57 49 0.008 -25 0.887 -176
400 0.935 -178 1.31 44 0.007 -27 0.889 -177
450 0.941 -179 1.10 40 0.007 -28 0.905 -179
500 0.944 -179 0.94 36 0.006 -27 0.921 -179
550 0.949 -180 0.82 33 0.005 -25 0.936 -180
600 0.953 180 0.71 29 0.004 -21 0.954 180
650 0.955 179 0.63 26 0.004 -17 0.964 -180
700 0.959 179 0.56 24 0.003 -10 0.965 -180
750 0.961 178 0.50 21 0.003 -2 0.968 -180
800 0.963 177 0.45 19 0.003 10 0.966 -179
850 0.966 177 0.41 17 0.003 22 0.952 -180
900 0.967 176 0.37 15 0.003 32 0.948 180
950 0.968 176 0.34 15 0.003 41 0.942 179

1000 0.969 175 0.31 11 0.004 49 0.930 177

IS

I

12

∠Φ

S

12

IS

I

22

∠Φ

S

22

COMMON SOURCE S-PARAMETER

(V

= 13.8 V ID = 3 A)

DS

FREQ

IS11I

∠Φ

S

11

(PD55025S)

IS

I

21

IS

∠Φ

S

21

I

12

∠Φ

S

12

IS

I

22

(MHz)

50 0.849 -164 13.99 91 0.012 2 0.833 -173
100 0.881 -171 6.94 80 0.011 -6 0.841 -175
150 0.895 -173 4.51 72 0.011 -12 0.857 -175
200 0.903 -175 3.27 65 0.010 -16 0.871 -175
250 0.912 -176 2.50 58 0.010 -21 0.877 -175
300 0.921 -176 1.99 52 0.009 -24 0.882 -175
350 0.927 -177 1.62 47 0.008 -27 0.883 -176
400 0.936 -178 1.35 42 0.007 -29 0.886 -177
450 0.943 -178 1.13 38 0.006 -29 0.904 -178
500 0.946 -179 0.97 34 0.006 -29 0.920 -179
550 0.952 -180 0.83 31 0.005 -26 0.935 -179
600 0.955 180 0.72 27 0.004 -23 0.955 -180
650 0.957 179 0.64 24 0.004 -17 0.965 -179
700 0.961 179 0.56 22 0.003 -8 0.967 -179
750 0.963 178 0.50 19 0.003 2 0.970 -179
800 0.965 178 0.45 17 0.003 14 0.968 -179
850 0.968 177 0.41 15 0.003 27 0.953 -179
900 0.969 176 0.37 13 0.003 36 0.949 180
950 0.970 176 0.34 11 0.003 45 0.943 179

1000 0.971 175 0.31 9 0.003 54 0.930 178

∠Φ

S

22

10/13

PD55025 - PD55025S

PowerSO-10RF Straight Lead MECHANICAL DATA

DIM.

A1 1.62 1.67 1.72 0.064 0.065 0.068
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009

a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221

c 0.23 0.27 0.32 0.008 0.01 0.012

D 9.4 9.5 9.6 0.370 0.374 0.377

D1 7.4 7.5 7.6 0.290 0.295 0.298

E 15.15 15.4 15.65 0.595 0.606 0.615
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247

F 0.5 0.019

G 1.2 0.047
R1 0.25 0.01
R2 0.8 0.031

T1 6 deg 6 deg
T2 10 deg 10 deg

MIN. TYP. MAX MIN. TYP. MAX

mm Inch

Note (1): Resin protrusions not included (max value: 0.15 mm per side)

CRITICAL DIMENSIONS:

- Overall width (L)

11/13

PD55025 - PD55025S

PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA

DIM.

A1 0 0.05 0.1 0. 0.0019 0.0038
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009

a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221

c 0.23 0.27 0.32 0.008 0.01 0.012

D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298

E 13.85 14.1 14.35 0.544 0.555 0.565
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247

F 0.5 0.019

G 1.2 0.047

L 0.8 1 1.1 0.030 0.039 0.042

R1 0.25 0.01
R2 0.8 0.031

T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg
T1 6 deg 6 deg
T2 10 deg 10 deg

Note (1): Resin protrusions not included (max value: 0.15 mm per side)

MIN. TYP . MAX MIN. TYP . MAX

mm Inch

12/13

CRITICAL DIMENSIONS:

- Stand-off (A1)

- Overall width (L)

PD55025 - PD55025S

p

Information furnished is believed to be ac curate and reliable. Howev er, STMicroel ectronics assumes no resp onsibility for t he consequ ences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any pat ent or pat ent rights of STMicroelectron i cs. Specifications mentioned in this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support devi ces or systems wi thout express written approval of STM i croelect ronics.

The ST log o i s registered trademark of STMicro el ectronics

 2003 STMicroelectronics - All Right s Reserved

All other names are the property of their respective ow ners.

Australi a - Brazil - Canada - China - Fi nland - France - Germa ny - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

STMicroelectron ics GROUP OF COMPANIES

htt

://www.st.com

13/13