Datasheet PD55008 Datasheet (SGS Thomson Microelectronics)

Page 1
1/10
PRELIMINARY DATA
May 2000
PD55008 - PD55008S
RF POWER TRANSISTORS
The
LdmoST
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 8 W with 17 dB gain @ 500 MHz /
12.5V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is acommon source N-Channel, en­hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s su­perior linearity performance makes it an ideal so­lution for car mobile radio.
The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
XPD55008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55008
PD55008S XPD55008S
ABSOLUTE MAXIMUM RATINGS(T
CASE
=25OC)
Symbol Parameter Value Unit
V
(BR)DSS
Drain Source Voltage 40 V
V
GS
Gate-Source Voltage ±20 V
I
D
Drain Current 4 A
P
DISS
Power Dissipation (@ Tc= 700C)
52.8 W
T
j
Max. Operating Junction Temperature 165
O
C
T
STG
Storage Temperature -65 to 165
O
C
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance 1.8 O
C/W
Page 2
PD55008 - PD55008S
2/10
PD55008S
Frequency
MHz
Zin
Zdl
520 1.586 - j2.087 3.082 + j2.043 500 1.409 - j3.448 2.129 + j3.219 480 1.075 - j2.727 2.046 +j1.960
PIN CONNECTION
SOURCE
DRAINGATE
SC15200
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
I
DSS
VGS=0V VDS=28V
1 µA
I
GSS
VGS=20V VDS=0V
1 µA
V
GS(Q)
VDS=10V ID= 150 mA
2.0 5.0 V
V
DS(ON)
VGS=10V ID= 1.5 A
1.0 V
g
FS
VDS=10V ID= 1.5 A 1.6 mho
C
ISS
VGS=0V VDS= 12.5 V f = 1 MHz
58 pF
C
OSS
VGS=0V VDS= 12.5 V f = 1 MHz 39 pF
C
RSS
VGS=0V VDS= 12.5 V f = 1 MHz
2.6 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
f = 500 MHz VDD= 12.5 V IDQ=150mA
8W
G
PS
f = 500 MHz VDD= 12.5 V P
OUT
=8W IDQ= 150 mA
17 dB
η
D
f = 500 MHz VDD= 12.5 V P
OUT
=8W IDQ= 150 mA
55
%
LOAD
Mismatch
f = 500 MHz V
DD
= 15.5 V P
OUT
=8W IDQ= 150 mA
ALL PHASE ANGLES
20:1 VSWR
PD55008
Frequency
MHz
Zin
Zdl
520 1.649 - j1.965 1.716 - j1.552 500 1.589 - j1.185 1.561 - j2.639 480 1.141 - j2.054 1.649 - j2.916
D
S
Typical Input
Impedance
Zin
G
Z
DL
Typical Drain
Load Impedance
SC13140
IMPEDANCE DATA
Page 3
3/10
PD55008 - PD55008S
Capacitance vs. Drain Voltage
0 5 10 15 20 25
VDD, DRAIN VOLTAGE (V)
1
10
100
1000
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Drain Current vs. Gate Voltage
123456789
VGS, GATE-SOURCE VOLTAGE (V )
0
1
2
3
4
5
6
7
8
Id, DRAIN CURRENT (A)
VDS=10V
Gate-Source vs. Case Temperature
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.92
0.94
0.96
0.98
1
1.02
1.04
1.06
VGS, GATE-SOURCE VOLTAGE(NORMALIZED)
ID=.25A
I
D
=.5A
ID=1A
I
D
=2A
I
D=1.5A
V
DS
=10V
TYPICAL PERFORMANCE
Page 4
PD55008 - PD55008S
4/10
Output Power vs. Input Power
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
Pout, OUTPUT POWER (W)
VDD = 12.5 V I
DQ=150 mA
480MHz
500MHz
520MHz
Power Gain vs. Output Power
024681012
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
20
22
Pg, POWER GAIN (dB)
VDD = 12.5 V I
DQ=150 mA
480MHz
500MHz
520MHz
Drain Efficiency vs.Output Power
024681012
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
80
Nd, DRAIN EFFICIENCY (%)
VDD =12.5V IDQ =150 mA
480MHz
500MHz
520MHz
Input Return Loss vs. Output Power
024681012
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, INPUT RETURN LOSS (dB)
VDD= 12.5 V I
DQ
=150mA
480MHz
500MHz
520MHz
Output Power vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
VDD=12.5V Pin=21.7dBm
480MHz
500MHz
520MHz
Drain Efficiency vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
10
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
VDD=12.5 V Pin=21.7 dBm
480MHz
500MHz
520MHz
TYPICAL PERFORMANCE
PD55008
Page 5
5/10
PD55008 - PD55008S
024681012
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
80
Nd, DRAIN EFFICIENCY (%)
VDD=12.5V I
DQ
= 150 mA
480MHz
500MHz
520 MHz
0 0.1 0.2 0.3 0.4 0.5
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
Pout, OUTPUT POWER (W)
VDD=12.5V I
DQ
=150mA
480MHz
500MH z
520MHz
Output Power vs. Supply Voltage
9 101112131415
VDD, SUPPLY VOLTAGE (V)
3
4
5
6
7
8
9
10
11
12
13
Pout, OUTPUT POWER (W)
Idq=150mA Pin=21.7 dBm
480 MHz
500 MHz
520MHz
Drain Efficency vs. Supply Voltage
9 101112131415
VDD, SUPPLY VOLTAGE (V)
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
Idq=150 mA Pin=21.7 dBm
480MHz
500MHz
520MHz
Output Power vs. Gate-Source Voltage
01234
VGS, GATE-SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
VDD= 12.5 V Pin=21.7 dBm
480MHz
500MHz
520MHz
TYPICAL PERFORMANCE
Power Gain vs. Output Power
02468101214
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
20
22
Pg, POWER GAIN (dB)
VDD=12.5V I
DQ
=150mA
480MH z
500MH z
520MHz
Drain Efficiency vs. Output Power
Output Power vs. Input Power
PD55008S
Page 6
PD55008 - PD55008S
6/10
Input Return Loss vs. Output Power
024681012
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, INPUT RETURN LOSS (dB)
VDD=12.5V I
DQ
=150mA
480MHz
500MH z
520MHz
Output Power vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
480MH z
500MHz
520MHz
V
DD
=12.5V
Pin=21dBm
Drain Efficiency vs.Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
10
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
480MHz
500MHz
520MHz
V
DD=12.5V
Pin=21dBm
Output Power vs. Supply Voltage
9 101112131415
VDD, SUPPLY VOLTAGE (V)
3
4
5
6
7
8
9
10
11
Pout, OUTPUT POWER (W)
480MHz
500MHz
520MHz
Idq=150mA Pin=21dBm
520MHz
Drain Efficency vs. Supply Voltage
9101112131415
VDD, SUPPLY VOLTAGE (V)
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
480 MHz
500MHz
520MHz
Idq=150 mA Pin= 21dBm
Output Power vs. Gate-Source Voltage
01234
VGS, GATE-SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
480MH z 500MHz
520MHz
V
DD
=12.5V
Pin=21dBm
TYPICAL PERFORMANCE
Page 7
7/10
PD55008 - PD55008S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2
SHORT FERRITT BEAD, FAIRRITE PRODUCTS (2743021446)
R4 33K, 1/8 W RESISTOR
C1,C12 240pF, 100 mil CHIP CAPACITOR Z1 0.451” X 0.080” MICROSTRIP C2,C3,C10,C11 0 to 20 pF TRIMMER CAPACITOR Z2 1.005” X 0.080” MICROSTRIP C4 82pF,100 mil CHIP CAP Z3 0.020” X 0.080” MICROSTRIP C5,C16 120pF, 100 mil CHIP CAP Z4 0.155” X 0.080” MICROSTRIP
C6,C13
10µF,50V ELECTROLYTIC CAPACITOR
Z5,Z6 0.260” X 0.223” MICROSTRIP
C7,C14 1.200pF mil CHIP CAP Z7 0.065” X 0.080” MICROSTRIP C8,C15 0.1 F,100 mil CHIP CAP Z8 0.266” X 0.080” MICROSTRIP C9 30pF,100 mil CHIP CAP Z9 1.113” X 0.080” MICROSTRIP L1 55.5 nH, TURN, COILCRAFT Z10 0.433” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT BOARD ROGER, ULTRA LAM 2000
R1 15 , 0805 CHIP RESISTOR
THK 0.030”
ε
r
= 2.55
R2 51 , 1/2 W RESISTOR 2oz ED Cu 2 SIDES R3 10 , 0805 CHIP RESISTOR
Page 8
PD55008 - PD55008S
8/10
TEST CIRCUIT
4 inches
6.4 inches
TEST CIRCUITTEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
Page 9
9/10
PD55008 - PD55008S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
Page 10
PD55008 - PD55008S
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patentsor otherrights ofthird parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
Loading...