Datasheet PD55008 Datasheet (SGS Thomson Microelectronics)

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PRELIMINARY DATA

May 2000

PD55008 - PD55008S

RF POWER TRANSISTORS

The

LdmoST

Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 8 W with 17 dB gain @ 500 MHz /

12.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55008 is acommon source N-Channel, en­hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55008’s su­perior linearity performance makes it an ideal so­lution for car mobile radio.

The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE BRANDING

XPD55008

PowerSO-10RF

(Straight Lead)

ORDER CODE BRANDING

PD55008

PD55008S XPD55008S

ABSOLUTE MAXIMUM RATINGS(T

CASE

=25OC)

Symbol Parameter Value Unit

V

(BR)DSS

Drain Source Voltage 40 V

V

GS

Gate-Source Voltage ±20 V

I

D

Drain Current 4 A

P

DISS

Power Dissipation (@ Tc= 700C)

52.8 W

T

j

Max. Operating Junction Temperature 165

O

C

T

STG

Storage Temperature -65 to 165

O

C

THERMAL DATA

R

th(j-c)

Junction-Case Thermal Resistance 1.8 O

C/W

PD55008 - PD55008S

2/10

PD55008S

Frequency

MHz

Zin

Ω

Zdl

Ω

520 1.586 - j2.087 3.082 + j2.043
500 1.409 - j3.448 2.129 + j3.219
480 1.075 - j2.727 2.046 +j1.960

PIN CONNECTION

SOURCE

DRAINGATE

SC15200

ELECTRICAL SPECIFICATION(T

CASE

=250C)

STATIC

Symbol Parameter Min. Typ. Max. Unit

I

DSS

VGS=0V VDS=28V

1 µA

I

GSS

VGS=20V VDS=0V

1 µA

V

GS(Q)

VDS=10V ID= 150 mA

2.0 5.0 V

V

DS(ON)

VGS=10V ID= 1.5 A

1.0 V

g

FS

VDS=10V ID= 1.5 A 1.6 mho

C

ISS

VGS=0V VDS= 12.5 V f = 1 MHz

58 pF

C

OSS

VGS=0V VDS= 12.5 V f = 1 MHz 39 pF

C

RSS

VGS=0V VDS= 12.5 V f = 1 MHz

2.6 pF

DYNAMIC

Symbol Parameter Min. Typ. Max. Unit

P

OUT

f = 500 MHz VDD= 12.5 V IDQ=150mA

8W

G

PS

f = 500 MHz VDD= 12.5 V P

OUT

=8W IDQ= 150 mA

17 dB

η

D

f = 500 MHz VDD= 12.5 V P

OUT

=8W IDQ= 150 mA

55

%

LOAD

Mismatch

f = 500 MHz V

DD

= 15.5 V P

OUT

=8W IDQ= 150 mA

ALL PHASE ANGLES

20:1 VSWR

PD55008

Frequency

MHz

Zin

Ω

Zdl

Ω

520 1.649 - j1.965 1.716 - j1.552
500 1.589 - j1.185 1.561 - j2.639
480 1.141 - j2.054 1.649 - j2.916

D

S

Typical Input

Impedance

Zin

G

Z

DL

Typical Drain

Load Impedance

SC13140

IMPEDANCE DATA

3/10

PD55008 - PD55008S

Capacitance vs. Drain Voltage

0 5 10 15 20 25

VDD, DRAIN VOLTAGE (V)

1

10

100

1000

C, CAPACITANCES (pF)

Ciss

Coss

Crss

f=1MHz

Drain Current vs. Gate Voltage

123456789

VGS, GATE-SOURCE VOLTAGE (V )

0

1

2

3

4

5

6

7

8

Id, DRAIN CURRENT (A)

VDS=10V

Gate-Source vs. Case Temperature

-25 0 25 50 75 100

Tc, CASE TEMPERATURE (°C)

0.92

0.94

0.96

0.98

1

1.02

1.04

1.06

VGS, GATE-SOURCE VOLTAGE(NORMALIZED)

ID=.25A

I

D

=.5A

ID=1A

I

D

=2A

I

D=1.5A

V

DS

=10V

TYPICAL PERFORMANCE

PD55008 - PD55008S

4/10

Output Power vs. Input Power

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Pin, INPUT POWER (W)

0

2

4

6

8

10

12

14

Pout, OUTPUT POWER (W)

VDD = 12.5 V
I

DQ=150 mA

480MHz

500MHz

520MHz

Power Gain vs. Output Power

024681012

Pout, OUTPUT POWER (W)

6

8

10

12

14

16

18

20

22

Pg, POWER GAIN (dB)

VDD = 12.5 V
I

DQ=150 mA

480MHz

500MHz

520MHz

Drain Efficiency vs.Output Power

024681012

Pout, OUTPUT POWER (W)

0

10

20

30

40

50

60

70

80

Nd, DRAIN EFFICIENCY (%)

VDD =12.5V
IDQ =150 mA

480MHz

500MHz

520MHz

Input Return Loss vs. Output Power

024681012

Pout, OUTPUT POWER (W)

-40

-30

-20

-10

0

Rtl, INPUT RETURN LOSS (dB)

VDD= 12.5 V
I

DQ

=150mA

480MHz

500MHz

520MHz

Output Power vs. Bias Current

0 100 200 300 400 500 600 700 800

IDQ, BIAS CURRENT (mA)

0

2

4

6

8

10

12

Pout, OUTPUT POWER (W)

VDD=12.5V
Pin=21.7dBm

480MHz

500MHz

520MHz

Drain Efficiency vs. Bias Current

0 100 200 300 400 500 600 700 800

IDQ, BIAS CURRENT (mA)

10

20

30

40

50

60

70

Nd, DRAIN EFFICIENCY (%)

VDD=12.5 V
Pin=21.7 dBm

480MHz

500MHz

520MHz

TYPICAL PERFORMANCE

PD55008

5/10

PD55008 - PD55008S

024681012

Pout, OUTPUT POWER (W)

0

10

20

30

40

50

60

70

80

Nd, DRAIN EFFICIENCY (%)

VDD=12.5V
I

DQ

= 150 mA

480MHz

500MHz

520 MHz

0 0.1 0.2 0.3 0.4 0.5

Pin, INPUT POWER (W)

0

2

4

6

8

10

12

14

Pout, OUTPUT POWER (W)

VDD=12.5V
I

DQ

=150mA

480MHz

500MH z

520MHz

Output Power vs. Supply Voltage

9 101112131415

VDD, SUPPLY VOLTAGE (V)

3

4

5

6

7

8

9

10

11

12

13

Pout, OUTPUT POWER (W)

Idq=150mA
Pin=21.7 dBm

480 MHz

500 MHz

520MHz

Drain Efficency vs. Supply Voltage

9 101112131415

VDD, SUPPLY VOLTAGE (V)

20

30

40

50

60

70

Nd, DRAIN EFFICIENCY (%)

Idq=150 mA
Pin=21.7 dBm

480MHz

500MHz

520MHz

Output Power vs. Gate-Source Voltage

01234

VGS, GATE-SOURCE VOLTAGE (V)

0

2

4

6

8

10

12

Pout, OUTPUT POWER (W)

VDD= 12.5 V
Pin=21.7 dBm

480MHz

500MHz

520MHz

TYPICAL PERFORMANCE

Power Gain vs. Output Power

02468101214

Pout, OUTPUT POWER (W)

6

8

10

12

14

16

18

20

22

Pg, POWER GAIN (dB)

VDD=12.5V
I

DQ

=150mA

480MH z

500MH z

520MHz

Drain Efficiency vs. Output Power

Output Power vs. Input Power

PD55008S

PD55008 - PD55008S

6/10

Input Return Loss vs. Output Power

024681012

Pout, OUTPUT POWER (W)

-40

-30

-20

-10

0

Rtl, INPUT RETURN LOSS (dB)

VDD=12.5V
I

DQ

=150mA

480MHz

500MH z

520MHz

Output Power vs. Bias Current

0 100 200 300 400 500 600 700 800

IDQ, BIAS CURRENT (mA)

0

2

4

6

8

10

12

Pout, OUTPUT POWER (W)

480MH z

500MHz

520MHz

V

DD

=12.5V

Pin=21dBm

Drain Efficiency vs.Bias Current

0 100 200 300 400 500 600 700 800

IDQ, BIAS CURRENT (mA)

10

20

30

40

50

60

70

Nd, DRAIN EFFICIENCY (%)

480MHz

500MHz

520MHz

V

DD=12.5V

Pin=21dBm

Output Power vs. Supply Voltage

9 101112131415

VDD, SUPPLY VOLTAGE (V)

3

4

5

6

7

8

9

10

11

Pout, OUTPUT POWER (W)

480MHz

500MHz

520MHz

Idq=150mA
Pin=21dBm

520MHz

Drain Efficency vs. Supply Voltage

9101112131415

VDD, SUPPLY VOLTAGE (V)

20

30

40

50

60

Nd, DRAIN EFFICIENCY (%)

480 MHz

500MHz

520MHz

Idq=150 mA
Pin= 21dBm

Output Power vs. Gate-Source Voltage

01234

VGS, GATE-SOURCE VOLTAGE (V)

0

2

4

6

8

10

12

Pout, OUTPUT POWER (W)

480MH z 500MHz

520MHz

V

DD

=12.5V

Pin=21dBm

TYPICAL PERFORMANCE

7/10

PD55008 - PD55008S

TEST CIRCUIT SCHEMATIC

TEST CIRCUIT COMPONENT PART LIST

B1,B2

SHORT FERRITT BEAD, FAIRRITE
PRODUCTS (2743021446)

R4 33KΩ, 1/8 W RESISTOR

C1,C12 240pF, 100 mil CHIP CAPACITOR Z1 0.451” X 0.080” MICROSTRIP
C2,C3,C10,C11 0 to 20 pF TRIMMER CAPACITOR Z2 1.005” X 0.080” MICROSTRIP
C4 82pF,100 mil CHIP CAP Z3 0.020” X 0.080” MICROSTRIP
C5,C16 120pF, 100 mil CHIP CAP Z4 0.155” X 0.080” MICROSTRIP

C6,C13

10µF,50V ELECTROLYTIC
CAPACITOR

Z5,Z6 0.260” X 0.223” MICROSTRIP

C7,C14 1.200pF mil CHIP CAP Z7 0.065” X 0.080” MICROSTRIP
C8,C15 0.1 F,100 mil CHIP CAP Z8 0.266” X 0.080” MICROSTRIP
C9 30pF,100 mil CHIP CAP Z9 1.113” X 0.080” MICROSTRIP
L1 55.5 nH, TURN, COILCRAFT Z10 0.433” X 0.080” MICROSTRIP
N1,N2 TYPE N FLANGE MOUNT BOARD ROGER, ULTRA LAM 2000

R1 15 Ω, 0805 CHIP RESISTOR

THK 0.030”

ε

r

= 2.55

R2 51 Ω, 1/2 W RESISTOR 2oz ED Cu 2 SIDES
R3 10 Ω, 0805 CHIP RESISTOR

PD55008 - PD55008S

8/10

TEST CIRCUIT

4 inches

6.4 inches

TEST CIRCUITTEST CIRCUIT

TEST CIRCUIT PHOTOMASTER

9/10

PD55008 - PD55008S

PowerSO-10RF (Straight Lead) MECHANICAL DATA

PowerSO-10RF (Formed Lead) MECHANICAL DATA

PD55008 - PD55008S

10/10

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