PRELIMINARY
Powerex, Inc., Hillis S treet, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOKTM
Dual SCR / Diode Isolated Module
700 Amperes / Up to 1800 Volts
Electrical Characteristics, TJ=25
°°°°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Max.
Units
Repetitive Peak Forward Leakage Current I
DRM
Up to 1800V, TJ=125°C 100 mA
Repetitive Peak Reverse Leakage Current I
RRM
Up to 1800V, TJ=125°C 100 mA
Peak On-State Voltage VTM I
TM
=3000A, TJ=125°C 1.30 V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V
(TO)1
r
T1
T
J
= 125°C, I = 15%I
T(AV)
to πI
T(AV)
0.703
0.184 V mΩ
Threshold Voltage, High-level
Slope Resistance, High-l e vel
V
(TO)2
r
T2
T
J
= 125°C, I = πI
T(AV)
to I
TSM
1.01
0.117 V mΩ
VTM Coefficients, Full Range
TJ = 125°C, I = 50A to 6kA
V
TM
= A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.7999
-4.62 E-02
7.33 E-05
1.10 E-02
Minimum dV/dt dV/dt Exponential to 0.67V
DRM
T
j
=125°C, Gate Open
600 V/µs
Typical Diode Reverse Recovery Time TRR T
j
=25°C, IF=1500A,
dI
R
/dt = 25A/µs, TP= 190 µs
22 Typ.
µ
s
Gate Trigger Current IGT T
j
=25°C, VD=12V 200 mA
Gate Trigger Voltage VGT T
j
=25°C, VD=12V 3.0 Volts
Non-Triggering Gate Voltage V
GDM
T
j
=125°C, VD= ½ V
DRM
0.15 Volts
Holding Current IH 300 mA
Peak Forward Gate Current I
GTM
4.0 Amp
Peak Reverse Gate Voltage V
GRM
5 Volts
Maximum Average Gate Power Dissipation P
GM (AVE)
16 Watts
Thermal Characteristics
Characteristics Symbol
Max. Units
Thermal Resistance, Junction to Case
R
Θ
J-C
Per Module, both conducting
Per Junction, both conduc ting
0.029
0.058
°
C/W
°
C/W
Thermal Impedance Coeff i cients
Z
Θ
J-C
Z
Θ
J-C
= K1 (1-exp(-t/
t
1
))
+ K
2
(1-exp(-t/
t
2
))
+ K
3
(1-exp(-t/
t
3
))
+ K
4
(1-exp(-t/
t
4
))
K
1
= 5.04 E-04
K2 = 2.31 E-03
K3 = 2.83 E-03
K4 =5.24 E-02
t
1
= 2.47 E-03
t
2
= 4.42 E-02
t
3
= 1.370
t
4
= 9.668
Thermal Resistance, Case to Sink Lubricated
R
Θ
C-S
Per Module 0.009
°
C/W
10/04/2002
PD42__07