PD411PI
PD411PI
Compact Package Type Photodiode
with Condensing Lens
■
Features
1. High sensitivity
(TYP. 1.0A/W at λ p=960 nm)
2. High speed response(tr,tf:TYP. 200ns at RL=1kΩ
■
Applications
1. Optoelectronic switches
■
Outline Dimensions
± 0.2
0.8
MAX. 0.4
Rest of gate
+ 0.2
- 0.1
1
4.0
2.4
2.54
❈
8˚8˚
8˚8˚
Detector center
)
0.45
± 0.1
R1.75
)
8˚
2.5
(
± 0.2
5.0
2.15
MIN. 0.5
2
8˚
0.4
+ 1.5
- 1.0
17.15
± 0.2
3.75
* Tolerance :±0.15
* ( ) : Reference dimensions
❈ Dimension at lead root
+ 0.2
- 0.1
1.5
(Unit : mm)
± 0.2
2.0
0.5
8˚
Transparent epoxy resin
8˚
1
2
1 Anode
2 Cathode
Absolute Maximum Ratings
■
Parameter Symbol Rating Unit
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
V
R
P 150 mW
-25to+85
T
opr
-40 to +100
T
stg
T
sol
(Ta=25˚C)
2.15mm
32 V
˚C
˚C
260 ˚C
Soldering area
PD411PI
Electro-optical Characteristics
■
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Shortcircuit current
Shortcircuit current temperature coefficient
Dark current
Dark current temperature coefficient
Terminal capacitance
Peak sensitivity wavelength
Peak spectral sensitivity
Response time
Rise Time
Fall Time
Half intensity angle
*2 EV : Illuminance by CIE standard light source A (tungsten lamp)
Isc µ A
β
I
d
α
C
λ
K - - A/W
t
r
t
f
∆
θ±45 -
(Ta=25 ˚C)
*2
= 100 lx
E
V
*2
= 100 lx
T
E
V
5.0 7.5 9.0
- 0.2 - %/˚C
VR= 10V, Ee= 0 - 0.5 10 nA
T
t
p
VR= 10V, Ee= 0 - 3.5 5.0
VR= 3V, f= 1MH
l = 960nm
RL=1kΩ
VR= 10V
Z
-
20
--nm
960
1.0
200
--
--
200
-
35
times/10˚C
pF
ns
˚
Fig. 1 Power Dissipation vs. Ambient
Temperature
200
150
100
50
Power dissipation P (mW)
0
-25
025
Ambient temperature Ta (˚C
50 75 10085
)
Fig. 2 Spectral Sensitivity
100
Ta=25˚C
90
80
70
60
50
40
30
Relative sensitivity (%)
20
10
0
300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
PD411PI
Fig. 3 Shortcircuit Current vs. Illuminance
1000
Ta=25˚C
)
100
µA
(
SC
10
1
0.1
Shortcircuit current I
0.01
1 10 100 1000 10000
Illuminance EV (lx
)
Fig. 5 Dark Current vs. Reverse Voltage
-7
10
5
2
-8
10
)
A
5
(
d
2
-9
10
5
2
Dark current I
-10
10
5
2
-11
10
-2
525252 25
10
-1
10
Reverse voltage VR (V
Ta= 25˚C
5
110
)
Fig. 4 Dark Current vs. Ambient Temperature
-6
10
VR=10V
-7
10
)
-8
A
10
(
d
-9
10
-10
10
Dark current I
-11
10
-12
10
-25 0
25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 6 Terminal Capacitance vs. Reverse
Voltage
60
50
)
pF
(
t
40
30
20
Terminal capacitance C
10
0
0.05 0.1 0.2 0.5 5 10 20 50
12
Reverse voltage VR (V
)
f =1MHz
= 25˚C
T
a
Fig. 7 Relative Output vs. Ambient
Temperature (Detector : GL537/GL538)
160
140
120
100
80
60
Relative output (%)
40
Fix PD and GL at position so that
20
distance between them may be
(
I =100µ A at I =20mA and Ta=25˚C.
SC
0
- 25 100
0255075
Ambient temperature Ta (˚C
Test circuit
PD411PlGL537/GL538
F
)
)
Fig. 8 Radiation Diagram
0
-10˚- 20˚
A
- 40˚
- 50˚
- 60˚
- 70˚
- 80˚
- 90˚
Relative sensitivity (%)
0
(
100
80
60
40
20
T
a
=25˚C
+ 20˚+ 10˚
)
+ 30˚- 30˚
+ 40˚
+ 50˚
+ 60˚
+ 70˚
+ 80˚
+ 90˚
Angular displacement θ
PD411PI
Fig. 9 Relative Output vs. Distance
100
10
1
Relative output (%)
0.1
10
(Detector : GL537/GL538)
GL538
GL537
= 20mA
I
F
T
-4
-3
10
Distance between emitter and detector d (mm)
a
-2
10
Test Circuit for Response Time
Semiconductor laser
Pulse generator
I
OUT
PD411PI
Output
R
L
= 0.1mA
+
10V
Input
Output
t
r
= 25˚C
Fig. 10 Response Time vs. Load Resistance
2
10
V
= 10V
R
5
= 25˚C
T
a
2
)
1
10
ms
5
(
f
,t
2
r
0
10
5
2
-1
10
Response time t
5
2
-2
-1
10
10
90%
10%
t
f
2
25 25 25 2510
10
Load resistance RL (Ω
3
10
4
10
5
10
)
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
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