Page 1
P
D1503YVS
NIKO
-
SEM
Q1
Q1
S : SOURCE
Dual N-Channel Enhancement Mode Field
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
Q2
V
(BR)DSS
30V
R
DS(ON)
15.8mΩ
ID
9A
Q1
30V
21mΩ
8A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 V
1
Q1
2
3
Q2
4 5
8
7
G : GATE
D : DRAIN
6
Continuous Drain Current
TA = 70 °C
ID
7 6
Pulsed Drain Current1 IDM 35 30
Avalanche Current IAS 29 21
Avalanche Energy L = 0.1mH EAS 43 23
TA = 25 °C 2
TA = 25 °C 9 8
Power Dissipation
TA = 70 °C
Junction & Storage Temperature Range Tj, T
PD
1.28
-55 to 150 °C
stg
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL Schottky UNITS
Reverse Current VR = 25V IR 0.05 mA
Forward Voltage IF = 1A VF 0.45 V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient
1
Pulse width limited by maximum junction temperature.
R
JA
62.5 °C / W
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
A
mJ
W
UNIT
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
REV 0.9
(BR)DSS
GS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
1
Q2
Q2
30
30
1 1 1.7
3
2
3
Oct-28-2009
V
Page 2
P
D1503YVS
NIKO
-
SEM
Q1
nA
Q1
Q1
A
Q1
Q1
15
Q1
Q1
Q2 Q1
84
Q1
Q2 Q1
11
Q2 Q1
Q1
Q1
Dual N-Channel Enhancement Mode Field
Gate-Body Leakage I
Effect Transistor
VDS = 0V, VGS = ±20V
GSS
SOP-8
Halogen-Free & Lead-Free
Q2
±100
±100
Zero Gate Voltage Drain Current I
On-State Drain Current1 I
Drain-Source On-State Resistance1
Forward Transconductance1 gfs
R
VDS = 24V, VGS = 0V
DSS
VDS = 20V, VGS = 0V, TJ = 125
°C
VDS = 5V, VGS = 10V
D(ON)
VGS = 4.5V, ID = 7A
VGS = 10V, ID = 9A
DS(ON)
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 7A
VDS = 10V, ID = 9A
VGS = 10V, ID = 7A
DYNAMIC
Q2
Q2
Q2
Q2
Q1
Q2
35
30
1
-1
10
-10
A
14.2
10.5
25.6
15.8
20
15.8
32
21
25
S
mΩ
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Total Gate Charge2
Gate-Source Charge2 Qgs
Gate-Drain Charge2 Qgd
iss
oss
rss
Q
g
(VGS=10V)
Q
g
(VGS=4.5V)
N-Channel
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 0.5V
(BR)DSS
ID = 9A
, VGS = 10V,
Q2
Q2
Q2
Q2
Q2
1040
560
295
160
139
1.5
2
20
9
5.5
3.5
2.5
3.5
2.5
pF
Ω
nC
REV 0.9
Oct-28-2009
2
Page 3
P
D1503YVS
NIKO
-
SEM
Q1
19
Q1
Q1
39
Q1
Q1
Q1
Q1
20
Q2 Q1
Dual N-Channel Enhancement Mode Field
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Turn-On Delay Time2 t
Rise Time2 tr
Turn-Off Delay Time2 t
Fall Time2 tf
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current IS
Forward Voltage1 VSD
Reverse Recovery Time trr
d(on)
d(off)
VDS = 15V
ID 1A, VGS = 10V, R
Q2:IF = 9A, VGS = 0V
Q1:IF = 7A, VGS = 0V
Q2:IF = 9A,dIF/dt = 100 A/μs
Q2
Q2
= 6Ω
GEN
Q2
Q2
Q2
Q2
Q2
18
12
40
15
8
8
6
2.8
0.7
2
1
nS
nS
A
V
Reverse Recovery Charge Qrr
1
Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2
Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “PD1503YVS”, DATE CODE or LOT #
Q1:IF = 7A,dIF/dt = 100 A/μs
6
12
nC
REV 0.9
Oct-28-2009
3
Page 4
P
D1503YVS
NIKO
-
SEM
R
DS(ON)
╳
Output Characteristics
Transfer Characteristics
Capacitance Characteristic
Dual N-Channel Enhancement Mode Field
Typical Characteristics: Q2
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
25
VGS = 10V
VGS = 4.5V
20
15
10
VGS = 3V
5
ID, Drain-To-Source Current(A)
0
0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-To-Source Voltage(V)
R
On-Resistance VS Temperature
DS(ON)
╳
2.0
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
RDS(ON)ON-Resistance(OHM)
R
DS(ON)
1.8
╳
1.6
╳
1.4
╳
1.2
1.0
╳
╳
0.8
╳
0.6
╳
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
VGS=10V
ID=9A
25
20
15
10
TJ=125°C
TJ=25°C
5
ID, Drain-To-Source Current(A)
TJ=-20°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-To-Source Voltage(V)
1.50E+03
1.20E+03
9.00E+02
6.00E+02
3.00E+02
C , Capacitance(pF)
0.00E+00
0 5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Ciss
Coss
Crss
Gate charge Characteristics
10
8
VGS , Gate-To-Source Voltage(V)
REV 0.9
ID=9A
VDS=15V
6
4
2
0
0 4 8 12 16 20
Qg , Total Gate Charge
Source-Drain Diode Forward Voltage
1.0E+0 3
1.0E+0 2
1.0E+01
1.0E+0 0
TJ =150° C
1.0E-01
TJ = 25° C
1.0E-0 2
IS , Source Current(A)
1.0E-03
1.0E-0 4
0.60.50.40.30.20.1 0.7
VSD, Source-To-Drain Voltage(V)
Oct-28-2009
4
Page 5
P
D1503YVS
NIKO
-
SEM
T
ransient Thermal Response Curve
Dual N-Channel Enhancement Mode Field
Effect Transistor
100
Oper ation in This
Are a is Limited by
R
DS(ON)
↓
10
1
NOTE :
0.1
1.VGS= 10V
ID , Drain Current(A)
2.TA=25˚C
3.R
θJA
4.Single Puls e
0.01
0.1 1 10 100
Safe Operating Area
= 62.5˚C/W
VDS, Drain-To-Source Voltage(V)
100us
1ms
10ms
100ms
1S
10S
DC
SOP-8
Halogen-Free & Lead-Free
Single Pulse Maximum Power Dissipation
100
90
80
70
60
50
Power(W)
40
30
20
10
0
0.0001 0.001 0.01 0.1 1 10
Single Pulse Time(s)
SINGLE PULSE
R
= 62.5˚C/W
θJA
TA=25˚C
r(t) , Normalized Effective
1.00E+01
1.00E+00
1.00E-01
Transient Thermal Resistance
1.00E-02
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
single Pluse
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Note
1.Duty cycle, D= t1 / t2
2.RthJA = 62.5 oC/W
3.TJ-TA = P*RthJC(t)
4.RthJA(t) = r(t)*RthJA
T1 , Square Wave Pulse Duration[sec]
REV 0.9
Oct-28-2009
5
Page 6
P
D1503YVS
NIKO
-
SEM
=15V
R
DS(ON)
╳
Output Characteristics
Transfer Characteristics
Capacitance Characteristic
Dual N-Channel Enhancement Mode Field
Typical Characteristics: Q1
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
25
VGS = 10V
VGS = 4.5V
20
15
10
VGS = 3V
5
ID, Drain-To-Source Current(A)
0
0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
R
╳
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
R
DS(ON)
RDS(ON)ON-Resistance(OHM)
R
DS(ON)
2.0
1.8
╳
╳
1.6
1.4
╳
1.2
1.0
╳
╳
0.8
0.6
╳
╳
0.4
-50 -25 0 25 50 75 100 125 150
VGS=10V
ID=7A
TJ , Junction Temperature(˚C)
25
20
15
10
TJ=25°C
5
ID, Drain-To-Source Current(A)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TJ=125°C
TJ=-20° C
VGS, Gate-To-Source Voltage(V)
1.00E+03
8.00E+02
6.00E+02
4.00E+02
2.00E+02
C , Capacitance(pF)
0.00E+00
0 5 10 15 2 0 25 30
VDS, Drain-To-Source Voltage(V)
4.0
Ciss
Coss
Crss
Gate charge Characteristics
10
8
VGS , Gate-To-Source Voltage(V)
REV 0.9
ID=9A
VDS
6
4
2
0
0 3 6 9 12 15
Qg , Total Gate Charge
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E +01
6
IS , Source Current(A)
1.0E+00
1.0E -01
1.0E -02
1.0E-0 3
1.0E-0 4
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
TJ = 150° C
TJ = 25 ° C
Oct-28-2009
Page 7
P
D1503YVS
NIKO
-
SEM
↓
Transient Thermal Response Curve
Dual N-Channel Enhancement Mode Field
Effect Transistor
100
Oper ation in This
Are a is Lim ite d by
R
DS(ON)
10
1
NOTE :
0.1
ID , Drain Current(A)
NOTE :
1.VGS= 10V
1.VGS= 10V
2.TA=25˚C
2.T=25˚C
3.R
= 62.5˚C/W
θJA
3.R
θJA
4.Single Puls e
0.01
0.1 1 10 100
Safe Operating Area
= 3.5
˚
100us
1ms
10ms
100ms
1S
10S
DC
SOP-8
Halogen-Free & Lead-Free
Single Pulse Maximum Power Dissipation
100
90
80
70
60
50
Power(W)
40
30
20
10
0
0.0001 0.001 0.01 0.1 1 10
Single Pulse Time(s) VDS, Drain-To-Source Voltage(V)
SINGLE PULSE
R
= 62.5˚C/W
θJA
TA=25˚C
r(t) , Normalized Effective
1.00E+01
1.00E+00
1.00E-01
Transient Thermal Resistance
1.00E-02
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
single Pluse
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Note
1.Duty cycle, D= t1 / t2
2.RthJA = 62.5 oC/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
T1 , Square Wave Pulse Duration[sec]
REV 0.9
Oct-28-2009
7
Page 8
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