Datasheet PCF5078, PCF5078T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

PCF5078

Power amplifier controller for GSM
and PCN systems

Product specification
File under Integrated Circuits, IC17

1999 Apr 12

Philips Semiconductors Product specification

Power amplifier controller for GSM and

PCF5078

PCN systems

FEATURES

• Compatible with baseband interface family PCF5073x

• Two power sensor inputs

• Temperature compensation of sensor signal

• Active filter for DAC input

• Power Amplifier (PA) protection against mismatching

• Bias current source for detector diodes

• Generation of pre-bias level for PA at start of burst

(home position)

• Possibility to adapt home position by external
components

• Applicable for a wide range of silicon and GaAs power
amplifiers.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

DD

I

DD(tot)

T

amb

supply voltage 2.4 3.6 5.0 V
total supply current −−6mA
operating ambient temperature −40 − +85 °C

APPLICATIONS

• Global System for Mobile communication (GSM)

• Personal Communications Network (PCN) systems.

GENERAL DESCRIPTION

This CMOS device integrates an amplifier for the detected
RF voltage from the sensor, an integrator and an active
filter to build a PA control loop for cellular systems with a
small amount of passive components.

ORDERING INFORMATION

TYPE

NUMBER

PCF5078T TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3.0 mm SOT505-1

NAME DESCRIPTION VERSION

PACKAGE

1999 Apr 12 2

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

BLOCK DIAGRAM

handbook, full pagewidth

antenna

VS2 VS1 VC

3421

C1

6 pF

C2

6 pF

30 µA

V

V

DD

DD

C3

5 pF

56 7

SS

VDAC

VHOME

RF

PA

sensor

D1 D2

30 µA

V

S1
C4

10 pF

OP1

R6

15 kΩ

R3

50 kΩ

S5

PCF5078

V

DD

8

V

DD

R1

20 kΩ

10 µA

V

home

VINT

VDAC

PCF5078

R2

1 kΩ

V

S1

S2S2S3S3S4S4S5

CONTROL

LOGIC

DD

10 µA

V

prebias

R4
6 kΩ

MGS193

OP4

V

DD

AUXDAC3

PCF5073x

Fig.1 Block diagram.

1999 Apr 12 3

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

PINNING

SYMBOL PIN DESCRIPTION

VC 1 PA control output voltage
VINT 2 negative integrator input
VS1 3 sensor signal input 1
VS2 4 sensor signal input 2
V

SS

VDAC 6 DAC input voltage
VHOME 7 home position input voltage
V

DD

handbook, halfpage

5 ground supply

8 supply voltage

VC

1

VINT VHOME

2

PCF5078

3

VS1

4

VS2

MGS194

8
7
6
5

V

DD

VDAC
V

SS

Fig.2 Pin configuration.

PCF5078

An external Digital-to-Analog Converter (DAC) with10-bit
resolution is necessary to control the loop e.g. the
AUXDAC3 of the baseband interface family PCF5073x.

An integrated active filter smooths the voltage steps of the
DAC and avoids a feedthrough of the DAC harmonics into
the modulation spectra of the PA.

The DAC signal and the sensor signal are added by
operational amplifier OP1. The voltage difference of both
signals is integrated by operational amplifier OP4, which
provides the PA control voltage on pin VC. The integration
is performed by means of an external capacitance C
connected between pins VINT and VC.

The shape of the rising and falling power burst edges can
be determined by means of the DAC voltage (see Fig.3).

Power-down mode

During the not used time slots in Time Division Multiple
Access (TDMA) systems, the PCF5078 must be turned off
by switching off the supply voltage on pin V

DD

Initial conditions and start-up

The PCF5078 has been designed to operate in bursts as
required in TDMA systems. For each time slot to be
transmitted it must be powered-up by switching on the
supply voltage. This allows a proper initialization of
switches S1 to S5.

VINT

.

FUNCTIONAL DESCRIPTION
General

The PCF5078 integrates an amplifier for the detected RF
voltage from the sensor, an integrator and an active filter
to build a PA control loop with a small amount of passive
components.

The sensor amplifier is able to amplify signals from a RF
power detector in a range of −20 to +15 dBm. This
complies to the PA output power range of GSM and PCN
systems when a directional coupler with 20 dB attenuation
is used.

The Schottky diode for power detection (sensor) is biased
by an integrated current source of 30 µA. Variations of the
forward voltage of the diodes with the temperature have no
influence on the measured signal, because they are
cancelled by sampling around the switched capacitor
operational amplifier OP1 (see Fig.1).

During start-up switches S1, S2 and S3 are closed and
switches S4 and S5 are opened (see Fig.4).

The forward voltages on the Schottky diodes are sampled
on capacitors C1 and C2, respectively, because switch S1
is closed. Moreover, the control voltage on pin VC is
initially forced to pre-bias level V

prebias

because

switches S2 and S3 are closed and switch S4 is opened.
Switch S1 is opened after a fixed time the supply voltage

has been switched on and then the circuit is ready. This
time is defined on-chip and can be maximum 45 µs. Once
switch S1 is open, a ramp signal with a minimum
amplitude of 25 mV applied on pin VDAC determines
opening of switch S3 and closing of switch S4 with a delay
of maximum 3 µs with respect to the start of the ramp.

After opening switch S3, the control voltage on pin VC
rises in a fixed amount of time to the home position level
so biasing the PA to the beginning of the active range of its
control curve. Switch S2 remains closed during this typical
time of 2 µs. When switch S2 is opened, switch S5 is
closed allowing the transfer of any signal coming from
amplifier OP1.

1999 Apr 12 4

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

After this preset, the control voltage is free to increase
according to the control loop if RF input is present
(see Fig.3).

For higher DAC ramp steps the delay time of opening
switch S3 (and closing switch S4) is reduced. On the
contrary, the delay time between opening switch S2 with
respect to opening switch S3 (and closing switch S4)
remains unchanged.

For a correct start-up it is required that the rising time of the
supply voltage is maximum 20 µs.

End of a burst

For a proper down ramp, the final value of the DAC input
voltage should be below the value at the beginning of the
burst and so be able to really shut-off the PA (see Fig.5).
This means the code programmed for the last bit of the
DAC down ramp (CODE
initial value of the up ramp (CODE
last code must be maintained until the supply voltage has
been switched off.

When the voltage on pin VC is detected to be lower than
V
to V
opening switches S4 and S5.

a built-in mechanism forces the voltage on pin VC

VHOME

by closing switches S1, S2 and S3 and by

prebias

) has to be lower than the

END

). Moreover, the

START

PCF5078

PA protection against mismatching

A second sensor amplified input is integrated into the
PCF5078 for measuring the reflected wave of the
directional coupler. The signal is added to the measured
RF power signal (see Fig.3). When mismatching at the
output of the PA occurs the power is reduced. A high
Voltage Standing W ave Ratio (VSWR) at the output of the
PA often occurs in systems where the PA is connected to
the antenna via switches with low attenuation instead of
using a duplex filter.

Home position voltage

A forward voltage of an on-chip silicon diode is provided as
the default home position voltage V
matches the requirements at the control input of most PAs
and exhibits the same temperature coefficient.

However, if another value is needed for a certain PA the
level can be adjusted by connecting external components
to pin VHOME (see Figs 10 and 11). The home position
voltage can be set between 200 and 1000 mV when using
a capacitor of 50 pF connected between pins VINT
and VC.

. This voltage

home

For proper operation, the supply voltage should be
switched off at least 15 µs later with respect to the end of
the down ramp on pin VDAC.

1999 Apr 12 5

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

handbook, full pagewidth

0

RF

out

(dBc)

−10

−20

−30

−40

−50

−60

−70

V

VDAC

<0.9V

−80

DD

−28 −18 −10 0

+543 +553 +561 +571

PCF5078

time (µs)

CODE

START

<0.9V

V

prebias

V

V

RF

VC

DD

DD

CODE

END

1614121086420

1614121086420

in

32

3028262422201816

3028262422201816

DAC bits at 560 kHz

32

DAC bits at 560 kHz

>15 µs>45 µs

time

time

MGS197

Fig.3 Timing diagram.

1999 Apr 12 6

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

handbook, full pagewidth

CODE

V

V

VDAC

START

closed

S1

opened

DD

<20 µs

<45 µs

>25 µs

>25 mV

0

<3 µs

PCF5078

time

42

6 . . .

DAC bits at 560 kHz

time

closed

opened

closed

opened

closed

opened

closed

opened

V

VHOME

V

prebias

S3

time

S4

time

S2

time

S5

2 µs

V

VC

MGS195

time

time

Fig.4 Initialization and start of a burst diagram.

1999 Apr 12 7

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

handbook, full pagewidth

CODE

END

< CODE

V

V

VDAC

START

closed

DD

PCF5078

time

3028. . . 26

32

≥15 µs

DAC bits at 560 kHz

S1, S2, S3

opened

closed

S4, S5

opened

V

VC

V

VHOME

V

prebias

<12 µs

MGS196

time

time

time

Fig.5 End of a burst diagram.

1999 Apr 12 8

Philips Semiconductors Product specification

Power amplifier controller for GSM and

PCF5078

PCN systems

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DD

V

n

I

n

P

tot

T

stg

T

amb

CHARACTERISTICS

V

= 2.4 to 5 V; T

DD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

DD

I

DD(tot)

Sensor input voltage

V

I(n)

Bias current source

I

bias

TC

bias

supply voltage 2.4 6.0 V
DC voltage on

pins VS2 and VS2 −3.0 +6.0 V

all other pins −0.5 +6.0 V
DC current on any signal pin −10 +10 mA
total power dissipation − 315 mW
storage temperature −65 +150 °C
operating ambient temperature −40 +85 °C

= −40 to +85 °C; see Fig.1; unless otherwise specified.

amb

supply voltage 2.4 3.6 5.0 V
total supply current −−6mA

input voltage on pins VS1 and VS2 −3 − V

DD

V

detector diode bias current no input signal;

T

=25°C; see Fig.7

amb

V

=2.4V 172839µA

DD

V

=5.0V 213345µA

DD

temperature coefficient of bias current

− 0.07 −µA/K

source

Home position voltage

V
TC

home

home

internal home position voltage T
temperature coefficient of internal home

amb

position voltage source

R3 resistor for internal home position

voltage

V

I(VHOME)

home position input voltage 200 − 1000

Low pass filter for DAC signal (3rd-order Bessel)

f

3dB

corner frequency 70 100 130 kHz

1999 Apr 12 9

=25°C 0.550 0.600 0.650 V

−−2.1 − mV/K

− 50 − kΩ

(1)

mV

Philips Semiconductors Product specification

Power amplifier controller for GSM and

PCF5078

PCN systems

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Integrator (OP4)

B

G

PSRR power supply rejection ratio at 217 Hz; V

SR

pos

SR

neg

V

O(min)

V

O(max)

Capacitors C1, C2, C3 and C4

M matching ratio accuracy between

Notes

1. For C

2. Guaranteed by design.

3. Slew rates are measured between 10% and 90% of output voltage level with an load of approximately 40 pF to
ground.

gain bandwidth CL= 120 pF; note 2 − 4 − MHz

DD

=3V;

50 55 − dB

note 2
positive slew rate VDD= 3 V; note 3 3.5 4.5 − V/µs
negative slew rate VDD= 3 V; note 3 3.5 4.5 − V/µs
minimum output voltage T

=25°C; see Fig.8 −−0.2 V

amb

maximum output voltage RL= 700 Ω; see Fig.6 0.85VDD−−V

− 1 − %

capacitances

= 50 pF.

VINT

6.5

handbook, halfpage

I

L

(mA)

5.5

4.5

3.5

2.5
23 54

MGS200

VDD (V)

Fig.6 Minimum load current as a function of the

supply voltage.

33

handbook, halfpage

I

bias

(µA)

31

29

27

T

amb

2

=25°C.

354

VDD (V)

Fig.7 Typical bias current as a function of the

supply voltage.

MGS198

1999 Apr 12 10

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

1.0

handbook, halfpage

TC

(mV/K)

0.8

0.6

0.4

0.2
23 54

MGS199

VDD (V)

PCF5078

Fig.8 Temperature coefficient of the minimum

output voltage as a function of the supply
voltage.

APPLICATION INFORMATION

handbook, full pagewidth

antenna

D1

sensor

D2

R2

1 kΩ

R1
1 kΩ

PA

C1

<50 pF

RF

VC

VINT

VS1

VS2

1

2

PCF5078

3

4

8

7

6

5

V

DD

VHOME

VDAC

V

SS

C2

C3

2.2 to 10 nF

22 to 82 pF

0.2 to 2.5 V

AUXDAC3

Fig.9 Application diagram for mobile station with PA protection against mismatching.

1999 Apr 12 11

PCF5073x

MGS201

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

ndbook, halfpage

V

home

VOLTAGE

GENERATION

(1) C=22to82pF.

V

(2) R

VHOME

-------------------------------------------­V

–

homeVVHOME

R3

50 kΩ

PCF5078

MGS204

VHOME

7

R3×=

V

VHOME

(1)

C

(2)

R

ndbook, halfpage

V

VOLTAGE

GENERATION

(1) C=22to82pF.

(2) R

VDDV

-------------------------------------------­V

VHOMEVhome

home

–

50 kΩ

PCF5078

VHOME

–

R3

MGS203

R3×=

7

VHOME

PCF5078

V

DD

(2)

R

V

VHOME

(1)

C

Fig.10 Suggested method to force externally

V

handbook, halfpage

VHOME<Vhome

PCF5078

.

VC

1

700 Ω

120 pF

MGS202

Fig.11 Suggested method to force externally

V

VHOME>Vhome

.

Fig.12 Typical output load on pin VC.

1999 Apr 12 12

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1999 Apr 12 13

BGY241

IC1

1234 5

RFOUTVSVCRFIN

GND

handbook, full pagewidth

Philips Semiconductors Product specification

Power amplifier controller for GSM and

PCN systems

RF

in

V

BATT

C11
330 µF

C5
39 pF

(1) D1 and D2: type BAT62_03W

R1

1 kΩR71 kΩ

D1

(1)

C13

27 pF

5

8

7

6

5

GND

V

VHOME

VDAC

V

P2

3

P4

4

DD

SS

AUXDAC3

of

PCF5073x

39 pF

R3
47 Ω

C7

C8
68 pF

2

(1)

D2

1

32

C20
68 nF

TR1

BC858

1

TXON

R16

2.2 kΩ

RF

C16

6.8 µF

out

VOUT

BYPASS

C1
1 µF

4

3

TK11230

IC5

5

GND

2

GND

V

BATT

VIN

6

R23
100

kΩ

CTL

1

MGS205

C18
1 µF

P1

COUPLER

VC

P3

R9

1.5 kΩ

1

2

3

4

1

6

2

GND

PCF5078

HY1

C6

39 pF

2

1

VINT

VS1

VS2

PCF5078

Fig.13 Application example of PCF5078.

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

PACKAGE OUTLINE

TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm

D

y

Z

8

c

5

E

H

E

PCF5078

SOT505-1

A

X

v M

A

A

pin 1 index

14

e

DIMENSIONS (mm are the original dimensions)

A

A

A

UNIT

max.

mm

1.10

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT505-1

1

0.15

0.05

A3b

2

0.95

0.25

0.80

IEC JEDEC EIAJ

p

0.45

0.25

w M

b

p

(1)E(2)

ceD

0.28

3.10

0.15

3.10

2.90

2.90

REFERENCES

2.5 5 mm0

scale

0.65

2

A

1

LH

E

5.10

4.70

detail X

L

p

0.70

0.40

L

(A3)

L

p

EUROPEAN

PROJECTION

θ

wyv

0.1 0.10.10.94

A

(1)

θ

Z

0.70

6°

0.35

0°

ISSUE DATE

99-04-09

1999 Apr 12 14

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

SOLDERING
Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

PCF5078

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Apr 12 15

Philips Semiconductors Product specification

Power amplifier controller for GSM and

PCF5078

PCN systems

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(3)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

, SO, SOJ suitable suitable

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

The package footprint must incorporate solder thieves downstream and at the side corners.

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

WAVE REFLOW

(2)

(3)(4)
(5)

SOLDERING METHOD

(1)

suitable

suitable
suitable

.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 12 16

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

NOTES

PCF5078

1999 Apr 12 17

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

NOTES

PCF5078

1999 Apr 12 18

Philips Semiconductors Product specification

Power amplifier controller for GSM and
PCN systems

NOTES

PCF5078

1999 Apr 12 19

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Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 465008/00/01/pp20 Date of release: 1999 Apr 12 Document order number: 9397 750 04997