Page 1
High Speed Photocoupler for
PC923
❈ Lead forming type (I type) and taping reel type (P type) are also available. (PC923I/PC923P)
(
❈❈ TÜV
■ Features
1. Built-in direct drive circuit for MOS-FET/
IGBT drive
(I
2. High speed response
(t
3. Wide operating supply voltage range
(Vcc : 15 to 30V, Ta = -10 to 60˚C
4. High noise reduction type
(CM
(CM
5. Recognized by UL, file No. E64380
6. High isolation voltage between input
and output (V
■ Applications
1. Inverter controlled air conditioners
VDE 0884) approved type is also available as an option.
O1P
PLH
, I
O2P
, t
PHL
)
: 0.4A
: MAX. 0.5µs
)
)
= MIN. - 1 500V/µs
H
= MIN. 1 500V/µs
L
= 5 000 V
ISO
)
)
)
rms
MOS-FET / IGBT Drive
■ Outline Dimensions
± 0.3
1.2
8
± 0.5
6.5
Anode mark
TYP.
0.5
0.5
3.5
±0.5
3.4
1 NC
2 Anode
3 Cathode
4 NC
* “OPIC ” (Optical IC) is a trademark of the SHARP Corporation.
An OPIC consists of a light-detecting element and signal processing circuit integrated onto a single chip.
7
PC923
1
234
9.66
±0.1
0.5
± 0.5
0.85
6
5
2.54
Internal connection diagram
± 0.2
8
Tr1
Amp.
1
23
±0.5
3.05
± 0.25
θθ
1
2
CC
θ = 0 to 13 ˚
5 O
6 O
7 GND
8 V
PC923
(
Unit : mm
567
Tr2
Interface
4
± 0.3
7.62
± 0.1
0.26
)
■ Absolute Maximum Ratings
(
Ta= T
unless otherwise specified
opr
)
Parameter Symbol Rating Unit
Input
Forward current
*1
Reverse voltage
Supply voltage
O1 output current
*2
O1 peak output current
Output
O2 output current
*2
O2 peak output current
O1 output voltage
Power dissipation
Total power dissipation
*3
Isolation voltage
Operating temperature
Storage temperature
*4
Soldering temperature
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
F
V
R
V
CC
I
1
I
O1P
I
O2
I
O2P
V
O1
P
O
P
tot
V
iso
T
opr
T
stg
T
sol
20 mA
6V
35 V
0.1 A
0.4 A
0.1 A
0.4 A
35 V
500 mW
550 mW
5 000
- 25 to + 80
- 55 to + 125
V
rms
˚C
˚C
260 ˚C
*1 Ta= 25˚C
*2 Puise width<=0.15µs,
Duty ratio:0.01
*3 40 to 60%RH, AC for 1 minute,
Ta= 25˚C
*4 For 10 seconds
Page 2
PC923
= 2.0V
= 2.0V
(
Ta= T
opr
15 - 24 V
- 0.2 0.4 V 1
18 21 - V 2
- - 500 µ A4
- - 500 µ A5
- 6 10 mA
5x101010
- 0.3 0.5 µ s
- 0.3 0.5 µ s
- 0.2 0.5 µ s
- 0.2 0.5 µ s
)
)
■ Electro-optical Characteristics
Parameter Symbol
V
Forward voltage
Input
Reverse current I
Terminal capacitance C
Operating supply voltage V
O1 low level output voltage
O2 high level output voltage
Output
O2 low level output voltage
O1 leak current
O2 leak current
High level supply current I
Low level supply current I
*6
“Low→High ” threshold
input current
Isolation resistance R
Low→High ” propagation delay time
Transfer
charac-
teristics
““High→Low ” propagation delay time
Rise time t
Response time
Fall time
Instantaneous common mode rejection
voltage “ Output : High level”
Instantaneous common mode rejection
voltage “ Output: Low level”
*5 When measuring output and transfer characteristics, connect a by-pass capacitor (0.01µF or more) between V
near the PC923.
*6 I
represents forward current when O2output goes from low to high.
FLH
F1
V
F2
R
t
CC
V
O1L
V
O2HVCC=V01
V
O2L
I
O1L
I
O2L
CCH
CCL
I
FLH
ISO
t
PLH
t
PHL
r
t
f
CH
M
CM
L
*5
Conditions MIN. TYP. MAX. Unit Fig.
Ta= 25˚C, IF= 10mA - 1.6 1.75 V Ta= 25˚C, IF= 0.2mA 1.2 1.5 - V Ta= 25˚C, VR=5V - - 10 µA-
Ta= 25˚C, V = 0, f= 1MHz - 30 250 pF Ta= - 10 to 60˚C 15 - 30 V
= 12V, V
V
CC1
I01= 0.1A, IF= 5mA
=
CC2
= - 12V
= 24V, I02= - 0.1A, IF= 5mA
VCC= 24V, I02= 0.1A, IF= 0 - 1.2 2.0 V 3
Ta= 25˚C, VCC=V01= 35V, IF=0
Ta = 25˚C, VCC=V02= 35V, IF= 5mA
Ta= 25˚C, VCC= 24V, IF= 5mA
= 24V, IF= 5mA - - 14 mA
V
CC
Ta= 25˚C, VCC= 24V, IF= 0 - 8 13 mA
= 24V, IF= 0 - - 17 mA
V
CC
Ta= 25˚C, VCC= 24V 0.3 1.5 3.0 mA
V
= 24V 0.2 - 5.0 mA
CC
Ta = 25˚C, DC = 500V, 40 to 60%RH
Ta= 25˚C, V
= 5mA
I
F
=47Ω, C
R
C
Ta= 25˚C, V
IF= 5mA, V
Ta= 25˚C, V
IF= 0, V
CM
= 24V, ∆ V
CC
CM
= 24V, ∆ V
CC
= 24V,
CC
= 3 000pF
G
= 600V(peak
O2H
= 600V(peak
O2L
unless otherwise specified
11
--Ω
-30- - kV/ µs
30- - kV/ µ s
and GND
CC
)
-
6
7
8
9
■ Truth Table
Input O2 Output Tr. 1 Tr. 2
ON High level ON OFF
OFF Low level OFF ON
Page 3
■ Test Circuit
PC923
Fig. 1 Fig. 2
2
I
F
3
PC923
8
V
5
V
V
6
O1L
CC1
V
CC2
7
Fig. 3 Fig. 4
PC923
PC923
PC923
8
5
6
7
V
V
O2L
V
CC
Fig. 6
8
5
6
A
V
CC
7
Fig. 8
8
5
V
6
V
CC
7
V
IN
tr=t
Pulse width 5 µµs
Duty ratio 50 %
Fig. 5
Fig. 7
I
F
I
F
I
F
variable
2
3
2
3
2
3
Fig. 9
PC923
+-
V
CM
8
5
V
6
V
7
CC
V
O2
2
SW
A
B
3
I
F
I
F
I
F
= 0.01 s
f
V
IN
V
2
PC923
3
2
PC923
3
2
PC923
3
2
PC923
3
waveform
waveform
OUT
t
PLH
8
5
6
7
8
5
6
I
O2
V
CC
V
V
O2H
I
A
O1L
V
CC
7
8
5
6
A
I
CC
V
CC
7
8
5
V
6
7
R
V
OUT
CC
G
C
G
50%
t
PHL
90%
50%
10%
t
r
t
f
V
waveform
CM
, V
CM
CM
waveform
H
O2
SW at A, IF= 5mA
, V
waveform
L
O2
SW at B, IF= 0mA
∆V
O2L
∆V
O2H
V
CM
(
Peak
GND
V
O2H
V
O2L
GND
)
Page 4
PC923
Fig.10 Forward Current vs.
Ambient Temperature
60
50
)
40
mA
(
F
30
20
Forward current I
10
0
Ambient temperature T
Fig.12 Forward Current vs.
Forward Voltage
100
)
10
mA
(
F
1
Forward current I
0.1
25˚C
50˚C
70˚C
T
= 0˚C
a
Fig.11 Power Dissipation vs.
Ambient Temperature
600
500
)
mW
(
tot
, P
O
400
300
P
tot
P
O
200
100
Power dissipation P
0
-40
(˚C)
1251007550250-25 80
a
0 25 50 75 100 125
Ambient temperature T
80
(˚C)
a
Fig.13 “ Low→High” Relative Threshold
Input Current vs. Supply Voltage
1.2
1.1
1.0
0.9
Relative threshold input current
0.8
T
= 25˚C
a
=1
I
FLH
at VCC= 24V
0.01
1.0
1.2 1.4 1.6 1.8 2.0 2.2
Forward voltage V
(V)
F
Fig.14 “ Low→High” Relative Threshold
Input Current vs. Ambient Temperature
1.6
1.4
1.2
1.0
Relative threshold input current
0.8
0.6
0 25 50 100-25 75
Ambient temperature T
VCC= 24V
I
FLH
at T
= 25˚C
a
(˚C)
a
=1
0.7
18 21 3015 24
Supply voltage V
27
(V)
CC
Fig.15 O1 Low Level Output Voltage vs.
Output Current
O
1
)
V
(
low level output voltage V
O
O1L
1
0.4
0.2
0.1
0.05
0.02
0.01
0.005
= 12V
V
CC1
V
= - 12V
CC2
I
= 5mA
F
T
= 25˚C
a
0.01 0.1 1.00.02 0.05 0.2 0.5
O1 output current I
(A)
O1
Page 5
PC923
Fig.16 O1 Low Level Output Voltage vs.
Ambient Temperature
0.5
)
V
(
0.4
O1L
V
CC1
V
CC2
I
F
= 12V
= - 12V
= 5mA
0.3
0.2
low level output voltage V
0.1
1
O
0
-25
IO1= 0.1A
Ambient temperature Ta (˚C
)
Fig.18 O2 High Level Output Voltage vs.
Ambient Temperature
24
)
V
23
(
O2H
22
I
Nearly = 0A
O2
21
20
high level output voltage V
19
2
O
18
-25
Ambient temperature Ta (˚C
Fig.20 O
Low Level Output Voltage vs.
2
Ambient Temperature
1.5
)
V
1.4
(
O2L
1.3
1.2
1.1
low level output voltage V
2
O
1.0
-25
Ambient temperature Ta (˚C
- 0.1A
IO2= 0.1A
V
I
V
I
F
CC
F
CC
= 5mA
= 24V
=0
= 24V
)
)
Fig.17 O2 High Level Output Voltage vs.
Supply Voltage
Ta= 25˚C
I
= 5mA
)
V
(
O2H
27
24
F
21
18
high level output voltage V
15
2
O
12
100025 5075
153018 21 24 27
Supply voltage V
30
)
(V
CC
Fig.19 O2 Low Level Output Voltage vs.
Output Current
O
2
4
=6V
V
CC
T
= 25˚C
)
V
(
O2L
a
2
1
0.5
0.2
0.1
low level output voltage V
2
O
100025 5075
0.05
0.01
0.1 1.00.02 0.05 0.2 0.5
O2 output current I
02
(A
)
Fig.21 High Level Supply Current vs.
Supply Voltage
12
)
10
mA
(
CCH
8
6
4
High level supply current I
100025 5075
2
15
Supply voltage VCC (V
T
= - 25˚C
a
25˚C
80˚C
3018 21 24 27
)
Page 6
PC923
Fig.22 Low Level Supply Current vs.
Supply Voltage
14
)
12
mA
(
CCL
10
8
6
Low level supply current I
4
15
T
= - 25˚C
a
25˚C
80˚C
Supply voltage VCC (V
)
Fig.24 Propagation Delay Time vs.
Ambient Temperature
)
µ s
(
, t
PLH
PHL
1.0
0.8
0.6
0.4
VCC= 24V
R
=47Ω
G
C
= 3 000pF
G
IF= 5mA
Fig.23 Propagation Delay Time vs.
Forwrad current
1.0
)
µ s
(
0.8
PLH
, t
PHL
0.6
0.4
0.2
Propagation delay time t
3018 21 24 27
t
PLH
t
PHL
0
0 5 10 15 20 25
t
PHL
75˚C
t
PLH
Forwrad current IF (mA
V
R
CG= 3 000pF
Ta= 75˚C
- 25˚C
Ta= - 25˚C
CC
=47Ω
G
= 24V
25˚C
25˚C
)
0.2
Propagation delay time t
0
0 255075100-25
Ambient temperature Ta (˚C
)
■ Application Circuit (For Power MOS-FET Driving Inverter
V
PC923
GND
CC
O
1
O
2
Anode
Cathode
TTL, microcomputer, etc.
Please refer to the chapter “Precautions for Use.”
●
V
= 12V
CC1
+
V
= 12V
CC2
+
UVW
)
(+)
Power supply
(-)
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