Page 1
PC915
PC915
Wide Band Linear Output
Type OPIC Photocoupler
■ Features
1. Wide band linear output type
(Frequency band width : TYP. 10Hz
to 8MHz
)
2. Fluctuation free stable output
(Output fluctuation : TYP. ± 5% at
within operating temperature 50 000hr
3. High isolation voltage
(V
: 5 000V
iso
)
rms
4. Standard dual-in-line package
5. Recognized by UL, file No, E64380
■ Applications
1. Video signal insulation in TV
2. Insulation amplifier in measuring instru ment and FA equipment
■ Outline Dimensions
Internal
connection diagram
± 0.3
1.2
)
± 0.5
6.5
± 0.5
TYP.
0.5
3.5
± 0.5
3.3
* “OPIC ” (Optical IC) is a trademark of the SHARP Corporation.
An OPIC consists of a light-detecting element and signal processing circuit integrated onto a single chip.
6
0.85
5
78
PC915
12 34
± 0.5
9.66
±0.1
0.5
2.54
1 NC
2 Anode
3 Cathode
4 NC
87 6 5
± 0.2
Anode mark
± 0.5
3.0
± 0.25
AGC: Automatic
θθ
θ = 0 to 13 ˚
5 V
O
6 V
CC
7 GND
8 C
AMP
AGC
Gain Control
± 0.3
7.62
± 0.1
0.26
4321
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage V
F
R
25 mA
6V
Power dissipation P 45 mW
Supply voltage V
Output
Output power dissipation P
Output current I
*1
Isolation voltage V
Operating temperature T
Storage temperature T
*2
Soldering temperature T
*1 40 to 60%RH, AC for 1 minute
*2 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
- 0.5 to + 13 V
CC
O
- 1.0 to + 0.5 mA
O
iso
opr
stg
sol
5 000
- 25 to + 85 ˚C
- 55 to + 125 ˚C
250 mW
V
260 ˚C
rms
Page 2
PC915
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit Fig.
Input
Output
Forward voltage V
Reverse voltage I
Terminal capacitance C
Supply current I
DC output voltage V
Output noise voltage V
F
R
t
CC
ODC
ONO
IF= 10mA - 1.6 1.8 V 1
VR=5V - - 10 µA-
V= 0, f= 1MHz
IF= 10mA - 9 16 mA 1
IF= 10mA 4 6 8 V 1
IF= 10mA,
Band width=
100Hz to 4.2MHz
Transfer
charac-
teristics
AC output voltage V
AC output
voltage
fluctuation
*3
Cut-off
frequency
*1
Temperature characteristics
*2
Forward current characteristics
High frequency f
Low frequency f
∆V
∆V
OAC
OAC-1
OAC-2
CH
CL
Differential gain DG - - % 3
RE= 230Ω 0.8 1.0 1.2 V
RE= 230Ω,
Ta= 10 to 70˚C
RE= 230 to 460Ω -±3- %2
RE= 230Ω 6 8 - MHz 2
RE= 230Ω -1020Hz2
Differential phase DP - - 3 - 3
Isolation resistance R
Floating capacitance C
*1 Fluctuation ratio of V
*2 Fluctuation ratio of V at R = 230 to 460Ω on the basis of V at R = 230 Ω
*3 Frequency of V when V falls by 3dB on the basis of V when frequency of V
IN OAC OAC IN
at Ta= - 10 to 70˚C on the basis of V
OAC
OAC E OAC E
ISO
f
DC500V,
40 to 60%RH
V= 0, f= 1MHz - 0.6 5 pF -
at Ta= 25˚C
OAC
■ Recommended Operating Conditions
Parameter Symbol MIN. MAX. Unit
Input Forward bias current I
Supply voltage V
AC output voltage V
Output
Output current I
C terminal capacitance
FB
CC
OAC
O
C
C
815mA
813V
-V
4
- 0.6 + 0.2 mA
10 - µ F
(
Unless otherwise spcified, Ta = 25˚C
- 60 250 pF -
-4- 1
-±3-%2
+3
5x10
in Fig. 2 is 100kHz.
P-P
10
1x10
11
- Ω
mV
)
rms
2
P-P
˚
-
Page 3
■ Test Circuit
Fig.1
Fig. 2
PC915
PC915
NC
1
Anode
2
I
F
V
3
Cathode
4
NC
AMP
AGC
V
CC
V
GND
6
A
O
5
+
8
C
+
10
F
µ
7
9V
10
F
µ
V
9V
470Ω
100µ F
IN
50Ω 1.2kΩ
V
VIN Waveform
(
Frequency) 15kHz at measuring V
100
R
E
µF
T
r1
+
T
r2
and shall be swept at measuring fCH and fCL.
PC915
NC
1
Anode
2
3
Cathode
4
NC
T
, Tr2: 2SA1029 or other same rank products
r1
AMP
AGC
, V
∆∆
OAC - 1
OAC
V
CC
V
O
C
GND
1V
and V
6
5
8
+
7
Sine wave
P - P
OAC - 2
9V
+
10
F
µ
CRT
10
F
µ
Page 4
Fig. 3
PC915
9V
470Ω
+
100
pF
T
r1
T
100µ F
1.2kΩ
V
75Ω
iN
VIN Waveform
P-D
1V
❈ APL (Average Picture Level
❈ IRE (International Radio Engineers
1IRE = 7.14mV (NTSC System
40IRE
0.067ms(1/15ms
)
)
230Ω
r2
PC915
NC
1
Anode
2
3
Cathode
4
NC
T
, Tr2: 2SA1029 or other same rank products
r1
AMP
AGC
V
CC
V
GND
Superposition
wave 3.58MHz
)
APL50%
)
6
O
5
+
8
C
+
10
F
µ
7
10
F
µ
DG, DP
Tester
9V
40IRE 100IRE
Fig. 4 Forward Current vs. Ambient
Temperature
30
25
)
20
mA
(
F
15
10
Forward current I
5
0
- 25 0 25 50 75 10085
Ambient temperature T
a
(˚C)
Page 5
PC915
Fig. 5 Power Dissipation vs. Ambient
Temperature
300
250
)
200
mW
(
150
100
Power dissipation P
50
0
0 25507510085
-25
Ambient temperature T
)
(˚C
a
Fig. 7 Supply Current vs. Ambient
Temperature
14
12
)
10
mA
(
CC
8
6
150Ω
RE= 460Ω
230Ω
Fig. 6 Forward Current vs. Forward Voltage
100
)
10
mA
(
F
= 0˚C
T
1
a
25˚C
50˚C
Forward current I
0.1
70˚C
0.01
1.0
1.2 1.4 1.6 1.8 2.0 2.2
)
Forward voltage V
(V
F
Fig. 8-a Relative AC Output Voltage 1
vs. Ambient Temperature
1.1
1.0
230Ω
150Ω
R
= 460Ω
E
230Ω
150Ω
4
Supply current I
2
0
-25
0 255075100
Ambient temperature T
Test Circuit of Supply Current
9V
R
PC915
470Ω
2SA1029
1.2kΩ
100pF
2SA
1029
E
2
3
Anode
Cathode
Relative AC output voltage
460Ω
0.9
- 25 0 25 50 75 100
)
(˚C
a
AC output voltage = 1
= 25˚C, RE= 230Ω
at T
a
Ambient temperature T
a
(˚C
)
Test Circuit of Relative AC Output Voltage1
vs. Ambient Temperatue
AMP
AGC
9V
R
PC915
1.2
kΩ
47pF
2SA
1029
E
2
3
Anode
Cathode
AMP
AGC
7
9V
V
CC
A
6
V
O
5
+
10µ F
C
8
+
7
10µ F
V
in
470Ω
2SA1029
+
100µ F
50Ω
Vin Input Waveform
1V
Sine wave
6
5
8
10µ F
P - P
V
V
9V
CC
O
+
10
C
µF
+
, f= 15kHz
CRT
Page 6
PC915
Fig. 8-b Relative AC Output Voltage 2
vs. Freguency (1
0
)
dB
(
-5
Relative AC output voltage
-10
4
10
R
Relative value of AC output
voltage that is based on the
voltage at f= 100kHz of Vin
E
10
Freguency f ( Hz)
)
= 460Ω, CE=47PF
R
= 230Ω, CE= 100PF
E
= 150Ω, CE= 150PF
R
E
5
6
10
Ta= 25˚C
Fig. 8-c Relative AC Output Voltage 2
1 µ F
)
= 25˚C
T
a
0.1 µ F
2
10
3
10
vs. Freguency (2
Relative value of AC output voltage that
is based on the voltage at f = 100kHz of Vin
0
)
dB
(
-5
CC=10µF
Relative AC output voltage
-10
0
10
1
10
Freguency f ( Hz)
Test Circuit of Relative AC Output Voltage 2
C
ERE
2SA
1029
1.2
kΩ
)
Anode
2
3
Cathode
PC915
AMP
AGC
7
1V
Sine wave
V
CC
6
V
O
5
C
8
+
10µ F
, f = 15MHz
P - P
9V
+
CRT
10µ F
vs. Freguency (1
9V
470Ω
2SA1029
+
100µ F
75Ω
V
in
Vin Iuput Waveform
7
10
Test Circuit of Relative AC Output Voltage 2
vs. Freguency (2
9V
470Ω
2SA1029
100µ F
50Ω
V
in
Input Waveform
V
in
4
10
)
R
E
PC915
230Ω
100pF
1029
kΩ
2SA
Anode
2
3
Cathode
AMP
AGC
7
+
1.2
V
CC
6
V
O
5
8
+
C
C
1V
, f= 15MHz
P - P
Sine wave
9V
+
CRT
10µ F
Fig. 9 Differential Gain vs. R
6
4
)
%
(
2
0
Differential gain DG
-2
-4
0 100 200 300 400 500
APL50%
R
(Ω
E
APL90%
)
E
= 25˚C
T
a
APL10%
Fig.10 Differential Phase vs. R
2
0
)
-2
APL90%
APL50%
APL10%
deg.
(
E
= 25˚C
T
a
-4
Differential phase DP
-6
-8
0 100 200 300 400 500
RE (Ω
)
Page 7
PC915
Test Circuit of Differential Gain vs. RE and Differential Phase vs. R
9V
V
in
470Ω
2SA1029
+
100
µ
50Ω
R
PC915
E
47pF
Anode
2
2SA
F
1029
3
1.2
k Ω
Cathode
AMP
AGC
7
6
5
8
V
V
10µ F
C
10
9V
CC
O
+
DG, DP
Tester
+
µ
F
E
Vin Waveform
P-P
1.0V
0.067ms(1/15ms
APL: Average Picture Level
■ Application Example
V
CC
9V
R
1
470Ω
T
r1
C
1
+
100µF
R
i
V
in
75Ω
T
, Tr2: 2SA1029 or other same rank products
r1
100pF
1.2kΩ
R
2
R
E
PC915
230Ω
Anode
2
T
r2
3
Cathode
AMP
AGC
7
6
5
8
C
V
CC
V
O
C
C
10µF
V
CC
9V
V
OUT
+
C
O
10µF
+
V
IB: DC flowed to infrared LED
i
: AC flowed to infrared LED
s
V
: Emitter voltage of Tr2 (Between emitter and GND
E
=2.3 = 2.3
OUT
i
s
I
VCC- V
B
< Example of Circuit Setting >
(1)
Set for Gain
Gain is represented by the following formula ;
G = 2.3/(V
When using on condition that Gain = 1, set V
(2)
Set for Input Resistance
Set Ri on output impedance (usually 75Ω) of a mounting equipment.
(3)
Set for R
When there is no signal (input signal : 0), set I
(4)
Set for Low Cut-off Frequency
Low cut-off frequency with C terminal capacitance, C
formula;
= 100/C
f
C
Then set Ci with input impedance of by-pass diode on as much value as possible on
condition that f
)
CC-VE
E
(Hz)(
C
C
: µ F value
C
>1/(2π CiR)[R= R1R2/(R1+R
C
)
on 2.3V. So that R1 and R2 is determined.
CC-VE
flowed into infrared LED on 10 mA.
LED
, is represented by the following
C
)
]
2
40IRE
V
in
E
Superposition
wave 3.58MHz
)
100IRE
40IRE
)
■ Precautions for Use
(1)
It is recommended that a by-pass capacitor of more than 0.01 µF is added between V
and GND near the device in order to stabilize power supply line.
(2)
Handle this product the same as with other integrated circuits against static electricity.
(3)
As for other general cautions, refer to the chapter “Precautions for Use ”
CC
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