Page 1
PC3H7/PC3Q67Q
PC3H7/PC3Q67Q
■ Features
1. Mini-flat package
2. Half pitch type (lead pitch : 1.27mm)
3. Isolation voltage (Viso : 2 500Vrms)
4. Applicable to infrared ray reflow (230˚C, for MAX. 30s)
5. High reliability
6. Taping package PC3H7 (1ch) PC3Q67Q (4ch)
7. Recognized by UL, file No. E64380
Approved by VDE, No.5922UG
■ Applications
1. Programmable controllers
■ Package Specifications
Model No.
PC3H7
PC3Q67Q
Taping reel diameter 330mm (3 000pcs.)
Taping reel diameter 330mm (1 000pcs.)
■ Absolute Maximum Ratings
Parameter Rating
Forward current
*1
Peak forward current
InputOutput
Power dissipation
Collector-emitter
voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
*2
Isolation voltage
Operating temperature
Storage temperature
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio : 0.001
*2 AC for 1min, 40 to 60%RH, f=60Hz
*3 For 10s
Taping specifications
PC3H7
PC3Q67Q
Symbol
I
F
IFM
V
R 6Reverse voltage V
P
V
CEO
VCEO
VECO
IC
PC
Ptot
Viso
Topr
Tstg
Tsol
50
1
70
70
35 V
6
50
150
170
2.5
−30 to +100
−40 to +125
260
Soldering area
(Ta=25˚C)
Unit
mA
A
mW
V
V
mA
mW
mW
kV
rms
˚C
˚C
˚C
0.2mm or more
Mini-falt Package, General
Purpose Half Pitch
Photocoupler
■ Outline Dimensions
PC3H7
1
±0.3
2.6
2
±0.25
1.27
±0.05
0.2
❈ ( ) : Reference dimensions
PC3Q67Q
16
Primary
Side
mark
±
0.1
0.4
1 8
0.2
±
2.6
0.1
±
0.1
16 15 14 13 12 11 10
12345678
Anode mark
S
3H7
±0.2
4.4
±0.3
5.3
(1.7)
+0.4
0.5
−0.2
+0.2
7.0
−0.7
Internal connection diagram
±
10.3
±
0.25
1.27
Epoxy resin
Internal connection diagram
34
21
0.3
9
C0.4
6°
4
3
±0.1
0.4
Epoxy resin
±0.2
±0.1
1
Anode
2
Cathode
3
Emitter
4
Collector
Model No.
0.2
±
4.4
0.05
±
0.2
2.0
0.1
5.3
7.0
9
(Unit : mm)
Parting line
±
0.3
+0.4
0.5
−0.2
+0.2
−0.7
1 3 5 7
Anode
2468
Cathode
9
11 13 15
Emitter
10 12 14 16
Collector
Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
Page 2
PC3H7/PC3Q67Q
■ Electro-optical Characteristics
Parameter Conditions
Forward voltage I
Input
Output
Transfer
charac-
teristics
Reverse current V
Terminal capacitance
Collector dark current
Collector-emitter IC=0.1mA, IF=0
breakdown voltage
PC3H7
PC3Q67Q
PC3H7
PC3Q67Q
Emitter-collector
breakdown voltage
Collector current
PC3H7
PC3Q67Q
Collector-emitter
saturation voltage
Isolation resistance
Floating capacitance V=0, f=1MHz
Response time
Rise time
Fall time
Symbol
V
F
Ct
ICEO
BVCEO
BVECO
IC
C
I
VCE(sat)
RISO
Cf
tr
tf
(Ta=25˚C)
MIN.
F=20mA
R=4V − − 10IR µA
V=0, f=1kHz
VCE=50V, IF=0
TYP.
MAX.
−
1.2
−
−
1.4
30
250
−
100
VCE=20V, IF=0 − − 100ICEO nA
IC=0.1mA, IF=0BVCEO
E=10µA, IF=0
I
F=1mA, VCE=5V
I
IF=5mA, VCE=5V
IF=20mA
I
C=1mA
DC500V
40 to 60%RH
V
CE=2V
I
C=2mA
R
L=100Ω
70
35
6
0.2
2.5 5 30 mA
−
5×10
−
−
−
10
− −
− −
−
−
0.1
11
1×10
0.6
4
3
−
4
0.2
−
1.0
18
18
Unit
V
pF
nA
V
V
V
mA
V
Ω
pF
µs
µs
Fig.1 Forward Current vs. Ambient
Temperature
60
50
40
(mA)
F
30
20
Forward current I
10
0
−30 0 25 75 100 1255550
Ambient temperature T
(°C)
a
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
100
80
70
60
40
Diode power dissipation P (mW)
20
0
−30 0 55 10050
Ambient temperature T
(°C)
a
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PC3H7/PC3Q67Q
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
250
200
(mW)
tot
170
150
100
Power dissipation P
50
0
−30 0 25 50 75 100
10000
5000
2000
(mA)
1000
FM
500
200
100
50
Peak forward current I
20
10
5
5 210
−3
Ambient temperature T
Pulse width<=100µs
T
−2
5 210
5 210
Duty ratio
=25°C
a
(°C)
a
−1
5 1
Fig.7 Current Transfer Ratio vs. Forward
Current
500
400
300
200
Current transfer ratio CTR (%)
100
0
0.1 1 10 100
Forward current I
(mA)
F
VCE=5V
=25°C
T
a
Fig.4 Total Power Dissipation vs. Ambient
Temperature
200
(mW)
150
C
100
50
Collector power dissipation P
0
−30 0 25 50 75 100 125
Ambient temperature T
(°C)
a
Fig.6 Forward Current vs. Forward VoltageFig.5 Peak Forward Current vs. Duty Ratio
500
200
100
50
(mA)
F
20
10
5
Forward current I
1
Ta=75˚C
50˚C
020.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage V
25˚C
0˚C
−25˚C
(V)
F
Fig.8 Collector Current vs. Collector-emitter
Voltage
=25°C
5mA
T
CE
a
1mA
(V)
(max)
P
50
I
40
(mA)
C
30
20
Collector current I
10
0
0 2 4 6 8 10
C
=30mA
F
20mA
10mA
Collector-emitter voltage V
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PC3H7/PC3Q67Q
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
150
100
50
Relative current transfer ratio (%)
0
−30 0 20 40 60 80 100
Ambient temperature T
a
(°C)
I
F
V
=5mA
=5V
CE
Temperature
−5
10
5
−6
10
5
(A)
−7
CEO
10
5
−8
10
5
−9
10
5
Collector dark current I
−10
10
5
−11
10
−30 0 20 40 60 80 100
Ambient temperature T
a
(°C)
V
=20V
CE
Fig.10 Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.16
0.14
0.12
0.10
(sat) (V)
CE
0.08
0.06
voltage V
Collector-emitter saturation
0.04
0.02
0.00
−30 0 20 40 60 80 100
Ambient temperaturet T
(°C)
a
I
F
IC=1mA
Fig.12 Response Time vs. Load ResistanceFig.11 Collector Dark Current vs. Ambient
1000
Response time (µs)
=2V
V
CE
500
=2mA
I
C
=25°C
T
200
a
100
50
20
10
5
2
t
r
t
f
t
d
t
s
1
0.5
0.2
0.1
0.01 0.1 1 10 100
Load resistance RL (kΩ)
=20mA
Fig.13 Test Circuit for Response Time
V
CC
R
L
Output
Input
Output
t
d
t
r
Input
R
D
Fig.14 Collector-emitter Saturation Voltage
vs. Forward Current
1mA
3mA
5mA
7mA
(mA)
F
Ta=25°C
10
=0.5mA
I
10%
90%
t
s
t
f
8
6
(sat) (V)
CE
V
4
2
Collector-emitter saturation voltage
0
0 2 4 6 8 10
C
Forward current I
Page 5
Fig.15 Reflow Soldering
Only one time soldering is recommended within the temperature
profile shown below.
230°C
200°C
180°C
PC3H7/PC3Q67Q
25°C
2min
30s
1min
1.5min
■ Precautions for Use
Please refer to the chapter "Precautions for Use".
1min
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