Page 1
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
12
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
= 40 V/ 45 V
R
= 7.5 A
F(AV)
VF ≤ 0.57 V
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
envelope. Intended for use as
tab
output rectifiersin low voltage, high 1 cathode
frequency switched mode power
supplies. 2 anode
The PBYR745 series is supplied in tab cathode
the conventional leaded SOD59
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR7 40 45
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 40 45 V
voltage
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Tmb ≤ 114 ˚C - 40 45 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 7.5 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 15 A
current
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
Operating junction - 150 ˚C
j max
temperature
Storage temperature - 65 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
November 1998 1 Rev 1.300
Thermal resistance junction - - 3 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient
Page 2
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage IF = 7.5 A; Tj = 125˚C - 0.45 0.57 V
IF = 15 A; Tj = 125˚C - 0.65 0.72 V
IF = 15 A - 0.64 0.84 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF
VR = V
RWM
; Tj = 100˚C - 17 22 mA
RWM
- 0.13 1 mA
November 1998 2 Rev 1.300
Page 3
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
Forward dissipation, PF (W)
8
Vo = 0.42 V
Rs = 0.02 Ohms
7
6
5
4
3
2
1
0
024681012
0.1
Average forward current, IF(AV) (A)
0.2
PBYR745
0.5
I
Fig.1. Maximum forward dissipation PF = f(I
square current waveform where I
2.8
PBYR745
2.2
Forward dissipation, PF (W)
8
Vo = 0.42 V
Rs = 0.02 Ohms
7
6
5
4
3
2
1
0
012345678
4
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(I
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
1.9
F(AV)
Tmb(max) (C)
D = 1.0
t
p
D =
T
=I
F(RMS)
Tmb(max) / C
a = 1.57
.
p
t
T
t
F(AV)
x √D.
F(AV)
126
129
132
135
138
141
144
147
150
);
126
129
132
135
138
141
144
147
150
);
Reverse current, IR (mA)
100
125 C
10
100 C
1
75 C
50 C
0.1
Tj = 25 C
0.01
0
Reverse voltage, VR (V)
25 50
PBYR745
Fig.4. Typical reverse leakage current; IR = f(VR);
1000
100
10
parameter T
Cd / pF
1
VR / V
j
PBYR745
10 100
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
Forward current, IF (A)
50
Tj = 25 C
Tj = 125 C
40
30
typ
20
max
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Forward voltage, VF (V)
PBYR745
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
Fig.6. Transient thermal impedance; Z
Transient thermal impedance, Zth j-mb (K/W)
10
1
0.1
0.01
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
t
p
P
D
D =
T
PBYR745
t
p
T
t
th j-mb
= f(tp).
November 1998 3 Rev 1.300
Page 4
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3,0 max
not tinned
1,3
max
(2x)
10,3
max
3,7
12
5,08
2,8
3,0
13,5
min
0,9 max (2x)
4,5
max
1,3
5,9
min
15,8
max
0,6
2,4
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998 4 Rev 1.300
Page 5
Philips Semiconductors Product specification
Rectifier diodes PBYR745 series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998 5 Rev 1.300
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