Datasheet PBYR735B, PBYR735D, PBYR740B, PBYR740D, PBYR745D Datasheet (Philips)

Philips Semiconductors Product specification

Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching V

R

= 40 V/ 45 V

• Reverse surge capability

• High thermal cycling performance I

F(AV)

= 7.5 A

• Low thermal resistance

VF ≤ 0.57 V

GENERAL DESCRIPTION

Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,
high frequency switched mode power supplies.

The PBYR745B series is supplied in the SOT404 surface mounting package.
The PBYR745D series is supplied in the SOT428 surface mounting package.

PINNING SOT404 SOT428

PIN DESCRIPTION

1 no connection
2 cathode

1

3 anode

tab cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

PBYR7 40B 45B
PBYR7 40D 45D

V

RRM

Peak repetitive reverse - 40 45 V
voltage

V

RWM

Working peak reverse - 40 45 V
voltage

V

R

Continuous reverse voltage Tmb ≤ 114 ˚C - 40 45 V

I

F(AV)

Average rectified forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 7.5 A
current

I

FRM

Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 15 A
current

I

FSM

Non-repetitive peak forward t = 10 ms PBYR7..B - 135 A
current t = 8.3 ms - 150 A

t = 10 ms PBYR7..D - 100 A
t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V

RRM(max)

I

RRM

Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T

j max

T

j

Operating junction - 150 ˚C
temperature

T

stg

Storage temperature - 65 175 ˚C

1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.

k a

tab 3

123

tab

13

tab

2

July 1998 1 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction - - 3 K/W
to mounting base

R

th j-a

Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

Forward voltage IF = 7.5 A; Tj = 125˚C - 0.45 0.57 V

IF = 15 A; Tj = 125˚C - 0.65 0.72 V
IF = 15 A - 0.64 0.84 V

I

R

Reverse current VR = V

RWM

- 0.13 1 mA

VR = V

RWM

; Tj = 100˚C - 17 22 mA

C

d

Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF

July 1998 2 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier

Fig.1. Maximum forward dissipation PF = f(I

F(AV)

);

square current waveform where I

F(AV)

=I

F(RMS)

x √D.

Fig.2. Maximum forward dissipation PF = f(I

F(AV)

);

sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

F(AV)

.

Fig.3. Typical and maximum forward characteristic

IF = f(VF); parameter T

j

Fig.4. Typical reverse leakage current; IR = f(VR);

parameter T

j

Fig.5. Typical junction capacitance; Cd = f(VR);

f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-mb

= f(tp).

024681012

0

1

2

3

4

5

6

7

8

D = 1.0

0.5

0.2

0.1

PBYR745

Rs = 0.02 Ohms

Vo = 0.42 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) (C)

150

147

144

141

138

135

132

129

126

D =

t

p

t

p

T

T

t

I

0

25 50

100

10

1

0.1

0.01

Reverse current, IR (mA)

Reverse voltage, VR (V)

PBYR745

50 C

75 C

100 C

125 C

Tj = 25 C

012345678

0

1

2

3

4

5

6

7

8

a = 1.57

1.9

2.2

2.8

4

PBYR745

Rs = 0.02 Ohms

Vo = 0.42 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

150

147

144

141

138

135

132

Tmb(max) / C

129

126

1

10 100

10

1000

100

Cd / pF

VR / V

PBYR745

0 0.2 0.4 0.6 0.8 1 1.2 1.4

0

10

20

30

40

50

PBYR745

Forward voltage, VF (V)

Forward current, IF (A)

Tj = 25 C
Tj = 125 C

max

typ

0.01

0.1

1

10

PBYR745

1us 10us 100us 1ms 10ms 100ms 1s 10s

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

t

p

t

p

T

T

P

t

D

July 1998 3 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier

MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g

Fig.7. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

Fig.8. SOT404 : soldering pattern for surface mounting

.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

11 max

4.5 max

1.4 max

10.3 max

0.5

15.4

2.5

0.85 max
(x2)

2.54 (x2)

17.5

11.5

9.0

5.08

3.8

2.0

July 1998 4 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier

MECHANICAL DATA

Dimensions in mm : Net Mass: 1.4 g

Fig.9. SOT428 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

Fig.10. SOT428 : soldering pattern for surface mounting

.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

6.22 max

2.38 max

0.93 max

6.73 max

0.3

10.4 max

0.5

0.8 max
(x2)

2.285 (x2)

0.5

seating plane

1.1

0.5 min

5.4

4 min

4.6

1

2

3

tab

7.0

7.0

2.15

2.5

4.57

1.5

July 1998 5 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998 6 Rev 1.200