Page 1
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
GENERAL DESCRIPTION QUICK REFERENCE DATA
Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring PBYR30- 35PTF 40PTF 45PTF
low forward voltage drop and V
RRM
absence of stored charge. These voltage
devices can withstand reverse V
voltage transients and have I
F
O(AV)
guaranteedreversesurgecapability. diodes conducting)
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - SOT199 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
Repetitive peak reverse 35 40 45 V
Forward voltage 0.65 0.65 0.65 V
Output current (both 20 20 20 A
case
a1
1
a2
3
3 anode 2 (a)
k
2
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-35 -40 -45
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
I2tI
I
RRM
I
RSM
T
stg
T
j
Repetitive peak reverse voltage - 35 40 45 V
Crest working reverse voltage - 35 40 45 V
Continuous reverse voltage Ths ≤ 113 ˚C - 35 40 45 V
Output current (both diodes square wave; δ = 0.5; - 20 A
conducting) Ths ≤ 109 ˚C
RMS forward current - 20 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Ths ≤ 109 ˚C
Non-repetitive peak forward t = 10 ms - 135 A
current per diode. t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
V
2
t for fusing t = 10 ms - 91 A2s
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 2 A
per diode.
Non-repetitive peak reverse tp = 100 µs-2A
current per diode.
Storage temperature -65 175 ˚C
Operating junction temperature - 150 ˚C
August 1996 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Thermal resistance junction to per diode - - 4.0 K/W
heatsink both diodes - - 3.5 K/W
(with heatsink compound)
Thermal resistance junction to in free air. - 35 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage (per diode) IF = 30 A; Tj = 125˚C - 0.70 0.75 V
IF = 20 A; Tj = 125˚C - 0.58 0.65 V
IF = 30 A - 0.75 0.80 V
Reverse current (per diode) VR = V
Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 800 - pF
VR = V
RWM
; Tj = 125 ˚C - 12 40 mA
RWM
- 100 200 µA
diode) 125 ˚C
August 1996 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
p
t
D = 1.0
T
Ths(max) / C
D =
PF / W
15
Vo = 0.3020 V
Rs = 0.0139 Ohms
10
5
0
0 5 10 15 20 25
0.1
PBYR1645F
0.5
0.2
I
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
PF / W
14
Vo = 0.302 V
Rs = 0.0139 Ohms
12
10
8
6
F(AV)
=I
PBYR1645F
F(RMS)
x √D.
2.84
2.2
Ths(max) / C
a = 1.57
1.9
t
p
T
t
F(AV)
90
110
130
150
) per
84
92
110
118
126
100
0.1
0.01
10
IR / mA
1
0
150 C
125 C
100 C
75 C
Tj = 50 C
25 50
VR/ V
PBYR1645
Fig.4. Typical reverse leakage current per diode;
10000
1000
IR = f(VR); parameter T
Cd / pF
j
PBYR1645
F(AV)
134
142
150
) per
4
2
0
0 5 10 15
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(I
diode; sinusoidal current waveform where a = form
factor = I
IF / A
50
Tj = 25 C
Tj = 125 C
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
F(RMS)
PBYR1645
typ
VF / V
/ I
F(AV)
.
max
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
100
1
10 100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Zth j-hs (K/W)
10
1
0.1
0.01
10us 1ms 0.1s 10s
tp / s
p
t
P
D
t
Fig.6. Transient thermal impedance per diode;
Z
= f(tp).
th j-hs
August 1996 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
21.5
max
15.7
0.7
3.5
15.3 max
7.3
3.1
3.3
6.2
5.8
5.2 max
3.2
o
45
seating
plane
3.5 max
not tinned
min
12
2.1 max
5.45
Fig.7. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
3
1.2
1.0
5.45
0.4
M
0.7 max
2.0
August 1996 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Rectifier diodes PBYR3045PTF series
schottky barrier
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996 5 Rev 1.100
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