Datasheet PBYR2540CTF, PBYR2545CTF Datasheet (Philips)

Philips Semiconductors Product specification

Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching V

• Reverse surge capability

• High thermal cycling performance I

a1

13

a2

• Isolated mounting tab

k

2

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The PBYR2545CTF is supplied in the SOT186 package.
The PBYR2545CTX is supplied in the SOT186A package.

PINNING SOT186 SOT186A

= 40 V/ 45 V

R

= 20 A

O(AV)

VF ≤ 0.65V

PIN DESCRIPTION

case

case

1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)

tab isolated

123

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

PBYR25 40CTF 45CTF
PBYR25 40CTX 45CTX

V
V
V

I

O(AV)

I

FRM

I

FSM

I

RRM

T
T

RRM

RWM

R

j

stg

Peak repetitive reverse - 40 45 V
voltage
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Ths ≤ 86 ˚C - 40 45 V

Average rectified output square wave; δ = 0.5; - 20 A
current (both diodes Ths ≤ 98 ˚C
conducting)
Repetitive peak forward square wave; δ = 0.5; - 20 A
current per diode Ths ≤ 98 ˚C
Non-repetitive peak forward t = 10 ms - 135 A
current per diode t = 8.3 ms - 150 A

sinusoidal; Tj = 125 ˚C prior to

Peak repetitive reverse pulse width and repetition rate - 1 A

surge; with reapplied V

surge current per diode limited by T

j max

RRM(max)

Operating junction - 150 ˚C
temperature
Storage temperature - 65 175 ˚C

October 1998 1 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

V

isol

C

isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink

R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree

Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink

Thermal resistance junction per diode - - 4.8 K/W
to heatsink both diodes - - 4 K/W

(with heatsink compound)
Thermal resistance junction in free air - 55 - K/W
to ambient

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

C

d

Forward voltage per diode IF = 20 A; Tj = 125˚C - 0.58 0.65 V

IF = 20 A - 0.63 0.68 V
Reverse current per diode VR = V

VR = V

RWM

; Tj = 100˚C - 30 40 mA

RWM

- 0.3 2 mA

Junction capacitance per VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 530 - pF
diode

October 1998 2 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier

0.2

PBYR2545CTX

0.5

I

D = 1.0

p

t

D =

T

Forward dissipation, PF (W) Ths(max) (C)

15

Vo = 0.37 V
Rs = 0.014 Ohms

10

5

0

0 5 10 15 20 25

0.1

Average forward current, IF(AV) (A)

Fig.1. Maximum forward dissipation PF = f(I

diode; square current waveform where

I

=I

F(AV)

Forward dissipation, PF (W) Ths(max) (C)

15

Vo = 0.37 V
Rs = 0.014 Ohms

10

4

x √D.

F(RMS)

PBYR2545CTX

2.2

2.8

1.9

a = 1.57

t

p

T

t

F(AV)

78

102

126

150

) per

78

102

Reverse current, IR (mA)

100

125 C

10

100 C

75 C

1

50 C

0.1
Tj = 25 C

0.01
0

Reverse voltage, VR (V)

25 50

PBYR3045WT

Fig.4. Typical reverse leakage current per diode;

10000

1000

IR = f(VR); parameter T

Cd / pF

j

PBYR2545CT

F(AV)

126

150

) per

5

0

0 5 10 15

Average forward current, IF(AV) (A)

Fig.2. Maximum forward dissipation PF = f(I

diode; sinusoidal current waveform where a = form

factor = I

Forward current, IF (A)

50

Tj = 25 C
Tj = 125 C

40

30

20

10

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

typ

Forward voltage, VF (V)

F(RMS)

max

/ I

F(AV)

.

PBYR2545CTX

Fig.3. Typical and maximum forward characteristic

IF = f(VF); parameter T

j

100

1

10 100

VR / V

Fig.5. Typical junction capacitance per diode;

Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Transient thermal impedance, Zth j-hs (K/W)

10

1

0.1

0.01
1us 10us 100us 1ms 10ms 100ms 1s 10s

pulse width, tp (s)

t

p

P

D

T

t

p

D =

T

t

PBYR2545CTX

Fig.6. Transient thermal impedance per diode;

Z

= f(tp).

th j-hs

October 1998 3 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

3.5 max

not tinned

10.2
max

5.7

max

3.2

3.0

4.4

0.9

0.5

4.4

4.0

seating

plane

13.5
min

4.4

max

2.9 max

7.9

7.5
17

max

123

M

0.4

5.08

Fig.7. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

0.9

0.7

2.54

top view

0.55 max

1.3

October 1998 4 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10.3

Recesses (2x)

2.5

0.8 max. depth

3 max.

not tinned

13.5
min.

0.4

M

max

3.2

3.0

123

5.08

2.8

2.54

15.8
max.

3

19

max.

seating

plane

0.5

2.5

4.6

max

2.9 max

6.4

0.6

2.5

15.8
max

Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.

1.3

1.0 (2x)

0.9

0.7

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1998 5 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1998 6 Rev 1.300