Datasheet PBYR2040CTX, PBYR2035CTX, PBYR2045CTX Datasheet (Philips)

Philips Semiconductors Product specification

Rectifier diodes PBYR2045CTF, PBYR2045CTX series
Schottky barrier

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching V

R

= 40 V/ 45 V

• Reverse surge capability

• High thermal cycling performance I

O(AV)

= 20 A

• Isolated mounting tab

VF ≤ 0.57V

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The PBYR2045CTF series is supplied in the SOT186 package.
The PBYR2045CTX series is supplied in the SOT186A package.

PINNING SOT186 SOT186A

PIN DESCRIPTION

1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)

tab isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

PBYR20 40CTF 45CTF
PBYR20 40CTX 45CTX

V

RRM

Peak repetitive reverse - 40 45 V
voltage

V

RWM

Working peak reverse - 40 45 V
voltage

V

R

Continuous reverse voltage Ths ≤ 84 ˚C - 40 45 V

I

O(AV)

Average rectified output square wave; δ = 0.5; - 20 A
current (both diodes Ths ≤ 78 ˚C
conducting)

I

FRM

Repetitive peak forward square wave; δ = 0.5; - 20 A
current per diode Ths ≤ 78 ˚C

I

FSM

Non-repetitive peak forward t = 10 ms - 100 A
current per diode t = 8.3 ms - 110 A

sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V

RRM(max)

I

RRM

Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T

j max

T

j

Operating junction - 150 ˚C
temperature

T

stg

Storage temperature - 65 175 ˚C

k

a1

a2

13

2

123

case

123

case

October 1998 1 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2045CTF, PBYR2045CTX series
Schottky barrier

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink

V

isol

R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree

C

isol

Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

Thermal resistance junction per diode - - 6 K/W
to heatsink both diodes - - 5 K/W

(with heatsink compound)

R

th j-a

Thermal resistance junction in free air - 55 - K/W
to ambient

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

Forward voltage IF = 10 A; Tj = 125˚C - 0.45 0.57 V

IF = 20 A; Tj = 125˚C - 0.64 0.72 V
IF = 20 A - 0.64 0.84 V

I

R

Reverse current VR = V

RWM

- 0.3 1.3 mA

VR = V

RWM

; Tj = 100˚C - 22 35 mA

C

d

Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 380 - pF

October 1998 2 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2045CTF, PBYR2045CTX series
Schottky barrier

Fig.1. Maximum forward dissipation PF = f(I

F(AV)

) per

diode; square current waveform where

I

F(AV)

=I

F(RMS)

x √D.

Fig.2. Maximum forward dissipation PF = f(I

F(AV)

) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

F(AV)

.

Fig.3. Typical and maximum forward characteristic

IF = f(VF); parameter T

j

Fig.4. Typical reverse leakage current per diode;

IR = f(VR); parameter T

j

Fig.5. Typical junction capacitance per diode;

Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

Z

th j-hs

= f(tp).

0 5 10 15

0

2

4

6

8

10

D = 1.0

0.5

0.2

0.1

PBYR1045

Rs = 0.015 Ohms

Vo = 0.42 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Ths(max) (C)

150

138

126

114

102

90

T

I

D =

t

p

t

p

T

t

0

25 50

100

10

1

0.1

0.01

Reverse current, IR (mA)

Reverse voltage, VR (V)

PBYR2045CT

50 C

75 C

100 C

125 C

Tj = 25 C

0246810

0

1

2

3

4

5

6

7

8

a = 1.57

1.9

2.2

2.8

4

PBYR1045

Rs = 0.015 Ohms

Vo = 0.42 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Ths(max) (C)

150

144

138

132

126

120

114

108

102

1

10 100

10

1000

100

Cd / pF

VR / V

PBYR2045CT

0 0.2 0.4 0.6 0.8 1 1.2 1.4

0

10

20

30

40

50

PBYR2045CT

Forward voltage, VF (V)

Forward current, IF (A)

Tj = 25 C
Tj = 125 C

max

typ

0.01

0.1

1

10

PBYR2045ctx

1us 10us 100us 1ms 10ms 100ms 1s 10s

pulse width, tp (s)

Transient thermal impedance, Zth j-hs (K/W)

D =

t

p

t

p

T

T

P

t

D

October 1998 3 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2045CTF, PBYR2045CTX series
Schottky barrier

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

Fig.7. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10.2
max

5.7

max

3.2

3.0

0.9

0.5

4.4

max

2.9 max

4.4

4.0

seating

plane

7.9

7.5
17

max

0.55 max

1.3

13.5
min

2.54

5.08

0.9

0.7

123

M

0.4

top view

3.5 max

not tinned

4.4

October 1998 4 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2045CTF, PBYR2045CTX series
Schottky barrier

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10.3
max

3.2

3.0

4.6

max

2.9 max

2.8

seating

plane

6.4

15.8
max

0.6

2.5

2.54

5.08

123

3 max.

not tinned

3

0.5

2.5

0.9

0.7

M

0.4

15.8
max.

19

max.

13.5
min.

Recesses (2x)

2.5

0.8 max. depth

1.0 (2x)

1.3

October 1998 5 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes PBYR2045CTF, PBYR2045CTX series
Schottky barrier

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1998 6 Rev 1.300