Page 1
Philips Semiconductors Product specification
Rectifier diodes PBYR10100B series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
tab 3
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOT404
= 60 V/ 80 V/ 100 V
R
= 10 A
F(AV)
VF ≤ 0.7 V
Schottky rectifierdiodesin aplastic PIN DESCRIPTION
tab
envelope. Intended for use as
output rectifiersin low voltage, high 1 no connection
frequency switched mode power
supplies. 2 cathode
1
The PBYR10100B series is 3 anode
supplied in the surface mounting
2
SOT404 package. tab cathode
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 60B 80B 100B
V
V
V
I
F(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 60 80 100 V
voltage
Working peak reverse - 60 80 100 V
voltage
Continuous reverse voltage Tmb ≤ 139 ˚C - 60 80 100 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 133 ˚C - 10 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 133 ˚C - 20 A
current
Non-repetitive peak forward t = 10 ms - 135 A
current t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
Operating junction - 150 ˚C
j max
temperature
Storage temperature - 65 175 ˚C
1 It is not possible to make connection to pin 2 of the SOT404 package
March 1998 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Rectifier diodes PBYR10100B series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction - - 2 K/W
to mounting base
Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board
Forward voltage IF = 10 A; Tj = 125˚C - 0.61 0.7 V
IF = 20 A; Tj = 125˚C - 0.74 0.85 V
IF = 20 A - 0.88 0.95 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 420 - pF
VR = V
RWM
; Tj = 125˚C - 5 15 mA
RWM
- 5 150 µA
March 1998 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Rectifier diodes PBYR10100B series
Schottky barrier
PF / W
15
Vo = 0.550 V
Rs = 0.015 Ohms
10
5
0
0 10
PBYR10100
0.2
0.1
5
IF(AV) / A
0.5
I
Tmb / C
D = 1.0
t
D =
p
T
t
t
p
T
Fig.1. Maximum forward dissipation PF = f(I
square current waveform where I
10
8
6
4
2
PF / W
Vo = 0.550 V
Rs = 0.015 Ohms
PBYR10100
2.2
2.8
4
F(AV)
1.9
=I
F(RMS)
Tmb / C
a = 1.57
120
130
140
150
15
F(AV)
x √D.
130
134
138
142
146
100
10
IR / mA
150 C
PBYR10100
125 C
1
100 C
75 C
0.1
Tj = 50 C
0.01
0
50 100
VR/ V
);
Fig.4. Typical reverse leakage current; IR = f(VR);
10000
1000
100
parameter T
Cd/ pF
j
PBYR20100CT
0
0 2 4 6 8 10
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(I
sinusoidal current waveform where a = form
factor = I
IF / A
50
Tj = 25 C
Tj = 125 C
40
Typ Max
30
20
10
0
0 1 2
0.5 1.5
F(RMS)
VF / V
/ I
.
F(AV)
PBYR10100
150
F(AV)
);
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
10
1 10 100
VR/ V
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
Transient thermal impedance, Zth j-mb (K/W)
10
1
0.1
p
p
t
0.01
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
P
D
pulse width, tp (s)
T
Fig.6. Transient thermal impedance; Z
t
D =
T
t
PBYR10100
th j-mb
= f(tp).
March 1998 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Rectifier diodes PBYR10100B series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.7. SOT404 : centre pin connected to mounting base.
11.5
2.5
Notes
1. Epoxy meets UL94 V0 at 1/8".
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : soldering pattern for surface mounting
.
March 1998 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Rectifier diodes PBYR10100B series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1998 5 Rev 1.100
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