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PBL 403 05
PBL 40305
January 2001
PBL 403 05
Multiband GSM Power Amplifier
Description.
The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in
multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm
output power at GSM900 and more than 31.5 dBm output power at DCS1800 or
PCS1900 frequencies.
The circuit uses an analog control signal to control the output power level. The circuit
is housed in a specially designed QSOP28 (150 mil body) package with no special
mounting requirements.
The circuit is manufactured in a high performance MESFET process that ensures
ruggednes for environmental variations.
VD1_DCS
VD2_DCS
Current generator
CA
VDC
Key features.
• One IC handles GSM900, DCS
1800 and PCS1900 bands.
• Low cost solution.
• Inputs matched to 50 Ω
• Digital band select function.
• Analog gain control.
• Proven GaAs MESFET-reliability.
• Tape and Reel.
• SMD QSOP 28 package.
RFIN_DCS
RFIN_GSM
VD1_GSM
Figure 1. Block diagram.
VD2_GSM
VD3GSM
VNEG
BIAS
VSEL
VD3_DCS
RFOUTGSM
VAPC
Figure 2. Package outlook.
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PBL 403 05
Maximum Ratings:
T
= + 25°C unless otherwise stated.
AMB
Parameter Conditions Symbol Min. T yp. Max. Unit
Supply voltage short supply spike V
Supply voltage V
Power control voltage V
Operating Case Temperature T
Storage Temperature Range T
DD
DD
APC
CASE
STORAGE
-25 +80 °C
-30 +100 °C
Electrical Characteristics for PA in GSM 900 mode:
= 3.2 V, T
V
CC
noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. V
Parameter Conditions Symbol Min. Typ. Max. Unit
Output Power V
Power added efficiency P
nd
2
harmonic - 0 dBm < P
rd
3
harmonic - 0 dBm < P
Isolation P
Power degradation P
V
Stability and leakage spurious Output VSWR = 6:1 all phases No parasitic oscillations
Noise power 935 - 960 MHz -90 dBm
Input S11 V
Input S11 P
= + 25°C, Z = 50 Ω, PIN = 10 dBm, f = 880 - 915 MHz and V
AMB
= 3.15 V P
APC
< 34.5 dBm 2 f
OUT
< 34.5 dBm 3 f
OUT
= 11.5 dBm, V
IN
T
= -25 °C to +75 °C
AMB
= 8.5 dBm, V
IN
= 2.8 V, T
APC
<= 0.5 V -30 -20 dBm
APC
= 0.6 V, 33 dBm
SEL
= -25 °C to +75 °C
AMB
All combinations of following when I
parameters: P
V
= 2.7 V to 5.1 V
DD
T
= -25 °C to +75 °C
AMB
925 - 935 MHz
= 0.5 V , -5.2 -5.0 dBm
APC
= 34.5dBm -12 -6.0 dBm
OUT
=5 to 34.5dBm(50Ω) All spurious < -36 dBm
OUT
RBW = 30 kHz
adjusted to give P
APC
= -4.0 V, V
NEG
OUT
AE
o
o
= 34.5 dBm unless othervise
OUT
= 0.0 V.
SEL
34.5 34.7 dBm
50 53 %
-7.0 0 dBm
-27 0 dBm
< 2.2 A
DD
6.0 V
5.0 V
4.2 V
-78 dBm
Electrical Characteristics for PA in DCS 1800 mode:
VCC = 3.2 V, T
dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. V
Parameter Conditions Symbol Min. Typ. Max. Unit
Output Power V
Power added efficiency P
nd
2
harmonic - 0 dBm < P
rd
3
harmonic - 0 dBm < P
Isolation PIN = 10.5 dBm, V
Power degradation P
V
2
= + 25°C, Z = 50 Ω, PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and V
AMB
= 3.15 V P
APC
= 31.5 dBm P
OUT
< 31.5 dBm 2 f
OUT
< 31.5 dBm 3 f
OUT
= 0.5 V -35 -30 dBm
T
= -25 °C to +75 °C
AMB
= 7.5 dBm, V
IN
= 2.8 V, T
APC
APC
= 2.85 V 30 30.5 dBm
DD
= -25 °C to +75 °C
AMB
OUT
AE
o
o
adjusted to give P
APC
= -4.0 V, V
NEG
SEL
OUT
= 2.0 V.
= 31.5
31.5 31.7 dBm
37 41 %
-8.0 0 dBm
-15 0 dBm
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PBL 403 05
Parameter Conditions Symbol Min. T yp. Max. Unit
Stability and leakage spurious Output VSWR = 6:1 all phases No parasitic oscillations
All combinations of following when I
parameters: P
V
= 2.7 V to 5.1 V RBW = 3 MHz
DD
T
= -25 °C to +75 °C
AMB
Noise power 1805 - 1880 MHz -76 dBm
935 - 960 MHz
=5 to 31.5dBm(50Ω) All spurious < -36 dBm
OUT
RBW = 30 kHz
925 - 935 MHz -70
Input S11 V
Input S11 P
= 0.5 V, -5.0 -4.0 dBm
APC
= 31.5dBm -14 -6.0 dBm
OUT
Common specifications:
Parameter Conditions Symbol Min. Typ. Max. Unit
Isolation at GSM RF output f = f
when DCS is active f = 2 • f
0
, f0 = 1750 - 1785 MHz -30 dBm
0
< 2.20 A
DD
-82 dBm
-20 dBm
Isolation at DCS RF output f = 2 • f
when GSM is active f = 3 • f
0
, f0 = 880 - 915 MHz -30 -25 dBm
0
-18 -15 dBm
Power regulation characteristics:
Parameter Conditions Symbol Min. Typ. Max. Unit
Power control range GSM: V
DCS: V
Power control slope V
APC
Switching time Step in V
= 0.5 - 3.15 V -20 34.5 dBm
APC
= 0.5 - 3.15 V -30 31.5 dBm
APC
= 0.5 - 3.15 V 150 dB/V
giving P
ref
= -15 to 2 µs
OUT
32.5 dBm, up and down
Power control current V
consumption
Band select current consumption V
Negative supply current V
<= 3.15 V I
APC
V
= 0 - 3 V
SEL
= 0 - 3 V, V
SEL
= 0 V, V
SEL
<= 3.15 V I
APC
<= 3.15 V I
APC
APC
SEL
NEG
45mA
0.01 0.1 mA
5.5 7.0 mA
consumption
Current generator:
Parameter Conditions Symbol Min. Typ. Max. Unit
Input resistance VDC- VCA < 0.8 V R
Charge current V
= 1.5 - 5.0 V, VCA = 0 V I
DC
ON
GSAT
100 150 Ω
6.7 10 mA
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PBL 403 05
CA
1
2
VNEG
VSEL
3
4
VAPC
VD1_DCS
RFIN_DCS
RFIN_GSM
VD1_GSM
VD3_GSM1
VD3_GSM2
GND
GND
GND
GND
5
6
7
8
9
10
11
12
13
14
Figure 3. Pin configuration.
Terminal Symbol Function
28
VDC
27
GND
26
VD3_DCS2
VD3_DCS1
25
24
GND
23
GND
22
VD2_DCS
21
GND
20
VD2_GSM
19
GND
18
GND
RFOUT_GSM2
17
16
RFOUT_GSM1
GND
15
1 CA Separate Current Source +terminal
2 VNEG Negative supply
3 VSEL Digital band select function
4 VAPC Analog output power control
5 VD1_DCS Power supply for 1st stage of high band chain
6,8,10,12,15, GND
18,19,21,23,
24,27
7 RFIN_DCS AC coupled 50ohm input
9 RFIN_GSM AC coupled 50ohm input
11 VD1_GSM Power supply for 1st stage of low band chain
13, 14 VD3_GSM Power supply for output stage stage of low band chain
16,17 RFOUT_GSM
20 VD2_GSM Power supply for 2nd stage of low band chain
22 VD2_DCS Power supply for 2nd stage of high band chain
25,26 VD3_DCS RF output and power supply for output stage of high band chain
28 VDC Separate Current Source -terminal
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PBL 403 05
50
40
30
20
10
POUT (dBm)
0
-10
-20
-30
-40
Vneg = -4.0V
Vdd = 3.2V
Vsel = 0.0V
Pin = 10dBm
freq = 900MHz
R1A_GSM
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDD (A)
50
40
30
20
10
POUT (dBm)
0
-10
-20
-30
-40
Vneg = -4.0V
Vdd=3.2V
Vsel=2.0V
Pin = 9dBm
freq=1750MHz
R1A_DCS
2.0
1.8
1.6
1.4
1.2
IDD (A)
1.0
0.8
0.6
0.4
0.2
-50
0
1
VAPC (V)
Figure 4. Pout and IDD versus VAPC at 900 MHz.
0
432
-50
0
1
VAPC (V)
0
432
Figure 5. Pout and IDD versus VAPC at 1750 MHz.
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PBL 403 05
sma
sma
l = 1mm
w = 1.5mm
l = 3mm
w = 0.3mm
l = 7mm
w = 0.3mm
MS31
l = 1.5mm
w = 1.5mm
MS33
MS35
MS32
C26
1µF
VDD
L2
18nH
C4
C23
C11
470pF
3.9pF
C28
10pF
8.2pF C1 7.5pF
50Ω µstrip
C7
470pF
C27
33nF
4.7nH
C5
100pF
L7
50Ω µstrip
C2
100pF
sma
C31
1µF
C30
1µF
sma
VAPC VSEL
VDD
C25
1µF
MS36
C15
l = 3.0mm
w = 0.3mm
470pF
50Ω µstrip
50Ω µstrip
C14
470pF
L9
120nH
C33
1µF
w = 0.3mm
C32
1µF
C3
470pF
l = 3.0mm
MS27
l = 4.0mm
w = 0.3mm
w = 1.0mm
MS29
l = 6.0mm
VNEG
1
CA
2
VNEG
3
VSEL
4
VAPC
5
VD1_DCS
6
7
RFIN_DCS
8
9
RFIN_GSM
10
11
VD1_GSM
12
13
VD3_GSM1
14
VD3_GSM2
MS = Micro Strip (+measurements)
VDC
CA
VD3_DCS2
VD3_DCS1
PBL 403 05
VD2_DCS
VD2_GSM
RFOUT_GSM2
RFOUT_GSM1
VDC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
The specifications apply to performance measured in test fixture.
VDD
Figure 6. Verification board schematic.
Figure 7. Verification board layout.
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Package drawing, QSOP 28
PBL 403 05
D
e
HE
Pin no 1
A
A1
B
C
L
Dim.
Dim.
min. max. min. max.
min. max. min. max.
A
A
1.35 0.532
1.35 0.532
A1
A1
0.10
0.10
B
B
0.21 0.31 0.008 0.012
0.2
C
C
0.19 0.25 0.0075 0.0098
D
D
9.80 9.98 0.386 0.393
E
E
3.81 0.150
3.81 0.150
e
0.635mm 0.025 inch ref.
e
0.635mm 0.025 inch ref.
5.80 6.20 0.2284 0.2240
H
H
L
L
0.41
0.4
α = 0−8 deg.
α = 0−8 deg.
45 deg.
1.75 0.688
1.75 0.688
0.25
0.25
3.99 0.157
3.99 0.157
1.27 0.016 0.050
1.27 0.016 0.050
inchesmillimeters
inchesmillimeters
0.004
0.004
0.0098
0.0098
α
Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed
for the consequences of its use nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson
Microelectronics AB. These products are sold only according to Ericsson Microelectronics AB's general conditions
of sale, unless otherwise confirmed in writing.
Specifications subject to change without
notice.
1522-PBL 403 10 Uen Rev.A
© Ericsson Microelectronics AB
January 2001
Ericsson Microelectronics AB
S-164 81 Kista-Stockholm, Sweden
Telephone: (08) 757 50 00
www.ericsson.se/microe
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