Datasheet P4C422-10SC, P4C422-10PC, P4C422-20DM, P4C422-15SC, P4C422-20FMB Datasheet (NCE RFORM)

P4C422
ULTRA HIGH SPEED 256 x 4
STATIC CMOS RAM

FEATURES

P4C422

High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35 ns (Commercial)
– 15/20/25 /35 ns (Military)

CMOS for Low Power
– 495 mW Max. – 10/12/15/20/25 (Commercial)
– 495 mW Max. – 15/20/25/35 (Military)

Single 5V±10% Power Supply

DESCRIPTION

The P4C422 is a 1,024-bit high-speed (10ns) Static RAM
with a 256 x 4 organization. The memory requires no
clocks or refreshing and has equal access and cycle
times. Inputs and outputs are fully TTL compatible.
Operation is from a single 5 Volt supply. Easy memory
expansion is provided by an active LOW chip select one
(CS1) and active HIGH chip select two (CS2) as well as 3­state outputs.

Separate I/O
Fully TTL Compatible Inputs and Outputs
Resistant to single event upset and latchup

resulting from advanced process and design
improvements

Standard 22-pin 400 mil DIP, 24-pin 300 mil
SOIC, 24-pin LCC package and 24-pin CERPACK
package

In addition to very high performance and very high den­sity, the device features latch-up protection, single event
and upset protection. The P4C422 is offered in several
packages: 22-pin 400 mil DIP (plastic and ceramic), 24­pin 300 mil SOIC, 24-pin LCC and 24-pin CERPACK.
Devices are offered in both commercial and military
temperature ranges.

FUNCTIONAL BLOCK DIAGRAM

CS

2

CS

1

WE
D
D
D
D

A
A
A
A
A

A
A
A

0
1

2
3

0
1

2
3
4

5
6
7

CONTROL

DATA INPUT

ROW

DECODER

COLUMN

DECODER

32 X 32
ARRAY

SENSE AMPS

OE

O
O
O
O

0
1
2

3

PIN CONFIGURATIONS

1

A
A
A
A
A
A
A

GND

D
O
D

3

2

2

3

1

4

0

5

5

6

6

7

7

8
9

0

10

0

11

1

12

24
23

22
21

20
19
18
17
16
15
14
13

SOIC (S4)

CERPACK (F3) SIMILAR

TOP VIEW

1

V
A

WE
CS
OE

CS
O
D
O
D
O

NCNC

CC
4

3
3
2
2
1

A

3

A

2

A

1

A

0

1

A

5

A

6

2

A

7

GND

D

0

O

0

D

1

1
2
3

4
5
6

7
8

9

10
11

22
21
20

19
18
17

16
15

14
13

12

DIP (P3-1, D3-1)

TOP VIEW

V

CC

A

WE
CS
OE

CS
O
D
O
D
O

INDEX

GND

A

0

A

5

NC

A

6

A

7

A

4
5
6
7
8
9

D0D1D2O

4

1

2

3

3

2

2

1

V

WE

1A2A3A4

312 242322

CC

151413121110

O

0

O

1

CS

21

1

OE

20

CS

19

2

NC

18

O

17

3

D

16

3

2

LCC (L4)

TOP VIEW

Means Quality, Service and Speed

1Q97

P4C422

MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

Power Supply Pin with –0.5 to +7 V
Respect to GND

Terminal Voltage with –0.5 to

V

TERM

Respect to GND VCC +0.5 V
(up to 7.0V)

T

A

Operating Temperature –55 to +125 °C

RECOMMENDED OPERATING CONDITIONS

(1)

Symbol Parameter Value Unit

T

BIAS

Temperature Under –55 to +125 °C
Bias

T

STG

I

OUT

CAPACITANCES

Storage Temperature –65 to +150 °C
DC Output Current 20 mA

(4)

(VCC = 5.0V, TA = 25°C, f = 1.0MHz)

(2)

Grade

Ambient Temp Gnd Vcc

Commercial 0°C to 70°C 0V 5.0V ±10%
Military –55°C to 125°C 0V 5.0V ±10%

Symbol Parameter Conditions Typ. Unit

C

IN

C

OUT

Input Capacitance VIN = 0V 5 pF

Output Capacitance V

= 0V 7 pF

OUT

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage

Symbol Parameter Test Conditions Unit

V

OH

V

OL

V

IH

V

IL

V

CL

I

IX

I

OZ

I

OS

Output High Voltage I
Output Low Voltage I

= –5.2 mA, V

OH

= +8 mA, V

OL

Input High Voltage 2.1 V
Input Low Voltage 0.8 V
Input Clamp Diode Voltage IIN = –10 mA –1.5 V
Input Load Current GND≤ V
Output Current (High Z) VOL≤ V

IN

OUT

Output Short Circuit VCC= Max., V
Current

(3)

(2)

P4C422

Min Max

= Min. 2.4 V

CC

= Min. 0.4 V

CC

≤ V

CC

≤ V

Output Disabled –10 10 µA

OH ,

= GND 90 mA

OUT

–10 10 µA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

I

CC

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.

3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.

4. This parameter is sampled and not 100% tested.

Dynamic Operating Current

Parameter

Temperature

Range

Commercial

Military

5. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for

6. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for

7. tW is measured at t

2

65
90

Unit

mA
mA

WSA

-15

90
90

= min.: t

-20

90
90

WSA

-25

65
90

is measured at tW = min.

-35

-10

90

N/A

20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified IOL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF
(15, 20, 25, 35) as in Fig. 1a and 1b respectively.

20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.

-12

90

N/A

FUNCTIONAL DESCRIPTION

P4C422

An active LOW write enable (WE) controls the writing/
reading operation of the memory. When the chip select
one (CS1) and the write enable (WE) are LOW and the
chip select two (CS2) is HIGH, the information on data
inputs (D0 through D3) is written into the addressed
memory word and preconditions the output circuitry so
that true data is present at the outputs when the write
cycle is complete. This preconditioning operation insures

minimum write recovery times by eliminating the “write
recovery glitch.” Reading is performed with chip selct one
(CS1) LOW, chip select two (CS2) HIGH, write enable
(WE) HIGH and output enable (OE) LOW. The informa­tion stored in the addressed word is read out on the
noninverting outputs (O0 through O3). The outputs of the
memory go to an inactive high impedance state whenever
chip select one (CS1) is HIGH, or during the write
operation when write enable (WE) is LOW.

TRUTH TABLE

CSCS

WEWE

Mode CS

CS

CSCS

2

1

OEOE

WE

OE Output

WEWE

OEOE

Notes: H = HIGH

Standby L X X X High Z
Standby X H X X High Z
D

Disabled H L X H High Z

OUT

Read H L H L D

OUT

HIGH Z = Implies outputs are disabled or off. This

Write H L L X High Z

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(VCC = 5V ± 10% except as noted, All Temperature Ranges)

(2)

L = Low
X = Don't Care

condition is defined as high impedance state
for the P4C422.

Sym.

t

RC

t

ACS

t

ZRCS

t

AOS

t

ZROS

t

AA

*VCC = 5V ± 5%

Read Cycle Time
Chip Select Time
Chip Select to High-Z
Output Enable Time
Output Enable to High-Z
Address Access Time

Parameter

(5)

(5)

(6)

(6)

(5)

TIMING WAVEFORM OF READ CYCLE

ADDRESS

A0–A

7

CS

1

CS

2

OE

-10*

-12

-15

-20

-25

-35
Unit

Max

Min

12

t

AA

t

7.5

7.5

10

RC

Min12Max

8

8

8

10

8
10
12

Min15Max

8

12

8

12
15

Min

20

Max

12
15
12

15
20

Min25Max

15
20

15
20
25

Min

35

Max

25
30

25
30

35

ns
ns

ns
ns

ns
ns

WE

DATA

OUTPUTS

O0–O

t

t

AOS

DATA VALID

3

t

ACS

3

ZROS

t

ZRCS

P4C422

AC CHARACTERISTICS—WRITE CYCLE

(VCC = 5V ± 10% except as noted, All Temperature Ranges)

Sym.

t

WC

t

ZWS

t

WR

t

W

t

WSD

t

WHD

t

WSA

t

WHA

t

WSCS

t

WHCS

Write Cycle Time
Write Enable to High-Z
Write Recovery Time
Write Pulse Width
Data Setup Time Prior to Write

Data Hold Time
Address Setup Time
Address Hold Time
Chip Select Setup Time
Chip Select Hold Time

*VCC = 5V ± 5%

Parameter

(5)

(6)

(5,7)

(5)

(5)

(5,7)

(5)

(5)

(5)

-10* -12

Min Max

10

8
0

2
00 0 25 5ns
22455
0
22 555ns

(2)

-15

Min

Max

12
8
8

10

10
9
0

Min

15

11

0

Max Min

12
12

225

-20 -25 -35
Max

Min Max Min

15
15

25

20
20

15

5

20

13

2

55ns

Max

35

30
25

20

5

5

Unit

ns

ns
ns
ns

ns

ns

00255ns

2

TIMING WAVEFORM OF WRITE CYCLE

ADDRESS

A0–A

7

t

CS

CS

DATA IN

D0–D

WE

DATA

OUTPUTS

O0–O

1

2

3

3

WSA

t

WSCS

t

WSD

t

ZWS

t

WC

t

WHA

t

WHCS

t

W

t

WHD

t

WR

4

AC TEST LOADS & WAVEFORMS

+5

P4C422

D

OUT

224 Ω

152 Ω

D

OUT

THEVENIN EQUIVALENT

Figure 1a Figure 1b

D

OUT

224 Ω

VTH= 1.62 V

+5

470 Ω

15 pF

TH

470 Ω

5 pF

+5

470 Ω

D

OUT

224 Ω

3.0 V

GND

10%

Note (5) Note (5)

90%

30 pF

90%

10%

Figure 1c

Figure 1d

5

P4C422

ORDERING INFORMATION

P4C422 xxxx

Device Type Package Processing

The P4C422 is also available as SMD Number: 5962-88594

Speed

C 0°C to +70°C
M -55˚C to +125˚C
MB MIL-STD-883, Class B

F CERPACK
D CERDIP (400 mil)
L Ceramic LCC (400 mil Square)
P Plastic DIP (400 mil)
S Plastic SOIC (300 mil)

10,12,15, 25, 35 ns Commercial
15,20,25, 35 ns Military

256 x 4 SRAM

SELECTION GUIDE

The P4C422 is available in the following temperature range, speed, and package options.

Temperature
Range

Commercial
Temperature

Military
Temperature

Military Pro­cessed*

Package

Plastic DIP
SOIC

CERDIP
LCC
CERP ACK

CERDIP
LCC
CERPACK

10

-10PC

-10SC
N/A

N/A
N/A

N/A
N/A
N/A

-12PC

-12SC

*Military temperature range with MIL-STD-883, Class B compliance.
N/A = Not Available

Speed (ns)

12 15

-15PC

-15SC

N/A
N/A
N/A

N/A
N/A
N/A

-15DM

-15LM

-15FM

-15DMB

-15LMB

-15FMB

-20PC

-20SC

-20DM

-20LM

-20FM

-20DMB

-20LMB

-20FMB

2520

-25PC

-25SC

-25DM

-25LM

-25FM

-25DMB

-25LMB

-25FMB

-35PC

-35SC

-35DM

-35LM

-35FM

-35DMB

-35LMB

-35FMB

35

6