Datasheet P4247-16, P5968-060, P5968-100, P5968-200, P4247-44 Datasheet (HAMAMATSU)

...
Page 1
INFRARED DETECTOR
g
(
)
(
)
(
)
(pF)
InSb photovoltaic detector
P5968/P4247 series
High-speed response, low-noise photovoltaic detector
P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also available to meet your special request.
Features
l
l
Built-in preamp type available Built-in preamp allows high precision photometry. P7751-01 (Uses P5968-060.)
Applications
l
Thermometers (radiometers)
l
Thermal imaging
l
Remote sensing
l
Gas analysis
l
FTIR
l
Spectrophotometry
P7751-02 (Uses P5968-200.)
Accessories (Optional)
l
Amplifier for InSb photovoltaic detector
Specification / Absolute maximum ratings
Dimensional
Type No.
outline/
Window
material *
Package Cooling
1
P5968-060 P5968-100 P5968-200
/Si Metal dewar
Liquid
nitrogen P5968-300 P5968-105 P4247-16 0.25 × 1.4 *
P4247-44
/Si Metal Stirling
/Si Metal dewar
Liquid
nitrogen *1: Window material Si: silicon (with AR coated)
*2: Size per 1 element (16 element array) *3: Size per 1 element (4 × 4 element array)
Active area
(mm)
f
0.6
f1 f
2
f
3
f1
0.45 × 0.45 *
Number of
element
2
3
C4159-01 (active aera: smaller than φ1 mm) C4159-04 (active area: φ2 mm) [Custom amplifier is also available for use with P5968-300 (3 mm dia. type)]
Absolute maximum ratings
Reverse
voltage
V
R
Operating
temperature
Topr
temperature
(V) (°C) (°C)
1 1 1 1
0.5 -40 to +60 -55 to +60
1
1 × 16
4 × 4
Storage
Tstg
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
condition
Element
Type No.
temperature
T
(°C) P5968-060 1 × 10 P5968-100 1 × 10 P5968-200 1 × 10 P5968-300 5 × 10
-196 5.3 5.5 2.5 P5968-105 1 × 10 P4247-16 1 × 10 P4247-44
Peak
sens itivity
wavelength
lp
m
m
Cut-off
wavelen
l
c
(mm)
sensitivity
th
Photo
S
l=lp
A/W
Shunt
resistance
Rsh
(W)
1 × 10
*
D
(500 K, 1200, 1)
/W)
Typ.
(cm·Hz
Min.
1/2
(cm·Hz
7
6
5
4
2 × 10103 × 10101.6 × 10
6
7
7
(lp, 1200, 1)
1/2
/W) (cm·Hz
Rise time
*
D
NEP
l=l
R=0 V
V
p
R
L
0 to 63 %
1/2
/W)
11
W/Hz
3.3 × 10
5.5 × 10
1.1 × 10
1.6 × 10
5.5 × 10
6.5 × 10
5.0 × 10
1/2
-13
-13
-12
-12
-13
-13
-13
Terminal
capacitance
tr
Ct =0 V
V
R
W
=50
f=1 MHz
(ns)
30 30
70 100 150 200 600 900
70 100
70 100
60 60
1
Page 2
InSb photovoltaic detector
P5968/P4247 series
Spectral response
12
10
/W)
1/2
11
10
,1200,1) (cm · Hz
l
D* (
10
10
1
2345
Measurement circuit
CHOPPER
1200 Hz
(Typ. T= -196 ˚C)
WAVELENGTH (µm)
6
KIRDB0063EC
S, N vs. chopping frequency
3
10
LOAD RESISTANCE: 1 k SUPPLY VOLTAGE: 0 V ELEMENT TEMPERATURE: -196 ˚C
2
10
1
10
S/N (OPTIONAL VALUE)
0
10
10
2
3
10
10
CHOPPING FREQUENCY (Hz)
(Typ.)
S
N
4
10
5
6
10
KIRDB0065ED
BLACK BODY
500 K
DETECTOR
BAND-PASS
FILTER
r.m.s.
METER
fo=1200 Hz
D
f=120 Hz
INCIDENT ENERGY: 2.64 µW/cm
2
KIRDC0004EA
2
Page 3
Dimensional outlines (unit: mm)
P5968-060/-100/-200/-300
LN2 FILL PORT 12.5
51 ± 1
46 ± 143 ± 1
32 ± 1
InSb photovoltaic detector
63.5 ± 1
28.5
PUMP-OUT PIPE 9.5
P5968/P4247 series
PHOTOSENSITIVE SURFACE
37 ± 1
8.5 ± 0.5
P5968-105
ional outline (P3257-50/-55, P5968-105, unit: mm)
PUMP-OUT BULB 10 MAX.
12.8
23.8
26.7
10.6 MAX.
+0
-0.01
22
29.0 MAX.
12.7
FOV
6.5
72 ± 1
95 ± 1
102 ± 1
66.8 ± 1
DETECTOR (ANODE) NC DETECTOR (CATHODE)
(4 ×) 56UNC-2B DEPTH: 5.5 4PL MOUNTING HOLE
PHOTOSENSITIVE SURFACE
SIGNAL OUTPUT LEAD
56.0 ± 0.3
50.8 ± 0.1
SIGNAL OUTPUT LEAD
172 ± 2
10 ± 1
28.3 MAX.
38.9 MAX.
MOUNTING SURFACE
58 36.4
KIRDA0131EC
43
(4 ×) 2.5
27.4 MAX.
50.1 MAX.
34.8 MAX. 39.4
25.9 26.8
14.5 MAX.
50.3 MAX.
81.1 MAX.
20.1 MAX.
70.0
76.5
KIRDA0130EA
KIRD
3
Page 4
P4247 series
InSb photovoltaic detector
P5968/P4247 series
LN2 FILL PORT 12.7 18 PIN CONNECTOR
69.9
PLUG PUMP-OUT BULB
15.6
50.8
12 ± 1
50.8
53.7 100.8
53.7
5.74
88.9
9.5
63.5
11
PHOTOSENSITIVE SURFACE
76.1
28.6
38.1 6.5
152.4
79.5
KIRDA0132EA
Details of multi-element detectors (unit: µm)
For custom devices with different number of elements, size and package, please consult our sales office.
P4247-16 P4247-44
250
4750
300
450 510
ACTIVE AREA
1400
ACTIVE AREA
KIRDA0006EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
1,980
510 450
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
KIRDA0146EA
Cat. No. KIRD1039E03 Nov. 2002 DN
Loading...