Page 1
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS (T
Characteristic
Collector--Emitter Voltage V
Collector--Base Voltage V
Emitter--Base Voltage V
Collector Current -- Continuous I
Total Device Dissipation @ TA=25°C
Derate above 25°C
Total Device Dissipation @ TC=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
=25°C unless otherwise noted)
A
Symbol Value Unit
CEO
CBO
EBO
C
P
D
P
D
TJ,T
stg
R
θ
JA
R
θ
JC
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
625
5.0mWmW/°C
1.5
12WmW/°C
-- 5 5 t o
+150
200 °C/W
83.3 °C/W
°C
TO--92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
P2N2
222A
AYW W G
G
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor S oldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 5
1 Publication Order Number:
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
P2N2222AG TO--92
P2N2222ARL1G TO--92
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Pb--Free)
(Pb--Free)
5000 Units/Bulk
2000/Tape & Ammo
†
P2N2222A/D
Page 2
P2N2222A
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(I
=10mAdc,IB=0)
C
Collector--Base Breakdown Voltage
(I
=10mAdc, IE=0)
C
Emitter--Base Breakdown Voltage
(I
=10mAdc, IC=0)
E
Collector Cutoff Current
(V
CE
=60Vdc,V
EB(off)
=3.0Vdc)
Collector Cutoff Current
=60Vdc,IE=0)
(V
CB
=60Vdc,IE=0,TA= 150°C)
(V
CB
Emitter Cutoff Current
=3.0Vdc,IC=0)
(V
EB
Collector Cutoff Current
=10V)
(V
CE
Base Cutoff Current
(V
CE
=60Vdc,V
EB(off)
=3.0Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
=0.1mAdc,VCE=10Vdc)
C
=1.0mAdc,VCE=10Vdc)
(I
C
=10mAdc,VCE=10Vdc)
(I
C
=10mAdc,VCE=10Vdc,TA=--55°C)
(I
C
= 150 mAdc, VCE= 10 Vdc) (Note 1)
(I
C
= 150 mAdc, VCE=1.0Vdc)(Note1)
(I
C
= 500 mAdc, VCE= 10 Vdc) (Note 1)
(I
C
Collector--Emitter Saturation Voltage (Note 1)
= 150 mAdc, IB=15mAdc)
(I
C
= 500 mAdc, IB=50mAdc)
(I
C
Base--Emitter Saturation Voltage (Note 1)
= 150 mAdc, IB=15mAdc)
(I
C
= 500 mAdc, IB=50mAdc)
(I
C
SMALL-- SIGNAL CHARACTERISTICS
Current--Gain -- Bandwidth Product (Note 2)
(I
=20mAdc,VCE= 20 Vdc, f = 100 MHz)C
C
Output Capacitance
=10Vdc,IE=0,f=1.0MHz)
(V
CB
Input Capacitance
=0.5Vdc,IC=0,f=1.0MHz)
(V
EB
Input Impedance
=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
Voltage Feedback Ratio
=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
Small--Signal Current Gain
=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
Output Admittance
=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
=10mAdc,VCE= 10 Vdc, f = 1.0 kHz)
(I
C
Collector Base Time Constant
=20mAdc,VCB= 20 Vdc, f = 31.8 MHz)
(I
E
Noise Figure
(I
= 100 mAdc, VCE=10Vdc,RS=1.0kΩ,f=1.0kHz)
C
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f
is defined as the frequency at which |hfe| extrapolates to unity.
T
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
I
CEO
I
BEX
h
V
CE(sat)
V
BE(sat)
f
C
obo
C
h
h
h
h
rb′C
N
FE
ibo
oe
40 --
75
--
6.0 --
-- 10
--
--
0.01
10
10 nAdc
--
-- 10
-- 20
35
50
75
35
100
50
40
--
--
0.6
--
T
300 --
--
--
--
--
300
--
--
0.3
1.0
1.2
2.0
-- 8.0
-- 25
ie
re
fe
c
F
2.0
0.25
--
--
50
75
5.0
25
-- 150
-- 4.0
8.0
1.25
8.0
4.0
300
375
35
200
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
nAdc
Vdc
Vdc
MHz
pF
pF
kΩ
X10
mMhos
ps
dB
--
-- 4
--
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2
Page 3
P2N2222A
ELECTRICAL CHARACTERISTICS (T
Characteristic
=25°C unless otherwise noted) (Continued)
A
Symbol Min Max Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time t
Storage Time
Fall Time t
(VCC=30Vdc,V
I
= 150 mAdc, IB1=15mAdc)(Figure1)
C
BE(off)
=--2.0Vdc,
(VCC=30Vdc,IC= 150 mAdc,
I
=15mAdc)(Figure2)
B1=IB2
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
0
-- 2 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200
+16 V
0
-- 1 4 V
<2ns
1kΩ
C
* < 10 pF
S
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn--On Time Figure 2. Turn--Off Time
t
d
r
t
s
f
<20ns
-- 10 ns
-- 25 ns
-- 225 ns
-- 60 ns
+30 V
200
1k
1N914
-- 4 V
* < 10 pF
C
S
1000
, DC CURRENT GAIN
FE
h
700
500
300
200
100
TJ= 125°C
25°C
70
50
30
20
10
-- 5 5 °C
VCE=1.0V
V
=10V
CE
, COLLECTOR CURRENT (mA)
I
C
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
Figure 3. DC Current Gain
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3
Page 4
1.0
0.8
P2N2222A
TJ=25°C
0.6
IC=1.0mA
10 mA 150 mA
500 mA
0.4
0.2
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
CE
V
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
I
, BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
200
100
70
50
30
20
t, TIME (ns)
10
7.0
5.0
3.0
2.0
5.0 7.0 30 50
10 20
IC, COLLECTOR CURRENT (mA)
tr@VCC=30V
t
d@VEB(off)
t
d@VEB(off)
70
=2.0V
=0
100
200
IC/IB=10
T
=25°C
J
300 500
500
300
200
t′s=ts-- 1 / 8 t
f
VCC=30V
I
I
TJ=25°C
100
70
50
30
t, TIME (ns)
t
f
20
10
7.0
5.0
10 20 70 1005.0 7.0 30 50 200 300 500
IC, COLLECTOR CURRENT (mA)
=10
C/IB
B1=IB2
10
8.0
6.0
4.0
NF, NOISE FIGURE (dB)
2.0
0
0.01 0.02 0.05
Figure 5. Turn--On Time
RS=OPTIMUM
R
= SOURCE
IC=1.0mA,RS= 150 Ω
500 mA, R
100 mA, R
50 mA, R
0.1
= 200 Ω
S
=2.0kΩ
S
=4.0kΩ
S
0.2 0.5
1.0 2.0 5.0 10 20
S
R
= RESISTANCE
S
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
Figure 6. Turn--Off Time
10
f=1.0kHz
8.0
IC=50mA
100 mA
6.0
500 mA
1.0 mA
4.0
NF, NOISE FIGURE (dB)
2.0
50
100
0
50 100 200 500
1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
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4
Page 5
P2N2222A
30
20
10
7.0
5.0
CAPACITANCE (pF)
3.0
2.0
0.1
0.2 0.3 0.5 0.7
1.0 2.0 3.0 5.0 7.0 10 20
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
1.0
TJ=25°C
0.8
V
BE(sat)@IC/IB
0.6
V
BE(on)@VCE
0.4
V, VOLTAGE (VOLTS)
0.2
V
CE(sat)@IC/IB
0
0.1 1.0 2.0 5.0 10 20
0.2 0.5
=10
=10V
=10
IC, COLLECTOR CURRENT (mA)
C
eb
50
100 200 500 1.0 k
1.0 V
C
cb
30 50
500
VCE=20V
T
=25°C
300
J
200
100
70
, CURRENT--GAIN BANDWIDTH PRODUCT (MHz)
50
T
f
1.0 2.0 3.0 5.0 7.0 10 20
30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Current--Gain Bandwidth Product
+0.5
0
°
-- 0 . 5
-- 1 . 0
-- 1 . 5
COEFFICIENT (mV/ C)
-- 2 . 0
-- 2 . 5
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
IC, COLLECTOR CURRENT (mA)
R
for V
θ
CE(sat)
VC
R
for V
θ
BE
VB
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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5
Page 6
P2N2222A
PACKAGE DIMENSIONS
TO--92 (TO--226)
CASE 29--11
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
1
G
H
V
C
N
D
J
SECTION X --X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLE D.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0 . 5 0 0 -- -- -- 1 2 . 7 0 -- -- --
L 0 . 2 5 0 -- -- -- 6 . 3 5 -- -- --
N 0.080 0.105 2.04 2.66
P -- -- -- 0 . 1 0 0 -- -- -- 2 . 5 4
R 0.115 ------ 2.93 ------
V 0 . 1 3 5 -- -- -- 3 . 4 3 -- -- --
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X --X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 ------
N 2.04 2.66
P 1.50 4.00
R 2 . 9 3 -- -- --
V 3 . 4 3 -- -- --
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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P2N2222A/D
6
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