Datasheet P2N2222A Datasheet (Motorola)

Page 1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
Collector–Base Voltage V
CBO
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5 12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V
(BR)CEO
40 Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V
(BR)CBO
75 Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
6.0 Vdc
Collector Cutoff Current
(VCE = 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
CEX
10 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C)
I
CBO
— —
0.01 10
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
I
EBO
10 nAdc
Collector Cutoff Current
(VCE = 10 V)
I
CEO
10 nAdc
Base Cutoff Current
(VCE = 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
BEX
20 nAdc
Order this document
by P2N2222A/D

SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
Page 2
P2N2222A
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc)
(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(1)
(IC = 500 mAdc, VCE = 10 Vdc)
(1)
h
FE
35 50 75 35
100
50 40
— — — —
300
— —
Collector–Emitter Saturation Voltage
(1)
(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)
V
CE(sat)
— —
0.3
1.0
Vdc
Base–Emitter Saturation Voltage
(1)
(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)
V
BE(sat)
0.6 —
1.2
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
f
T
300 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
25 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
ie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
re
— —
8.0
4.0
X 10
–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
fe
50 75
300 375
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
oe
5.0 25
35
200
m
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rbC
c
150 ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
N
F
4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
CC
= 30 Vdc, V
BE(off)
= –2.0 Vdc,
t
d
10 ns
Rise Time
(VCC = 30 Vdc, V
BE(off)
= –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
t
r
25 ns
Storage Time
t
s
225 ns
Fall Time
IB1 = IB2 = 15 mAdc) (Figure 2)
t
f
60 ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
(V
(VCC = 30 Vdc, IC = 150 mAdc,
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P2N2222A
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
–2 V
< 2 ns
0
1.0 to 100
µ
s,
DUTY CYCLE
2.0%
1 k
+30 V
200
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
µ
s,
DUTY CYCLE
2.0%
1 k
+30 V
200
CS* < 10 pF
–4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT GAINV
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
–55°C
IC = 1.0 mA
10 mA 150 mA
500 mA
VCE = 1.0 V VCE = 10 V
Page 4
P2N2222A
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20
70
5.0
100
5.0 7.0 30 50
200
10
30
7.0
20
IC/IB = 10 TJ = 25
°
C
tr @ VCC = 30 V td @ V
EB(off)
= 2.0 V
td @ V
EB(off)
= 0
3.0
2.0 300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V IC/IB = 10 IB1 = I
B2
TJ = 25
°
C
t
s
= ts – 1/8 t
f
t
f
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20
50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE RS = RESISTANCE
IC = 1.0 mA, RS = 150
500 µA, RS = 200
100 µA, RS = 2.0 k
50 µA, RS = 4.0 k
f = 1.0 kHz
IC = 50 µA 100
µ
A
500
µ
A
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500
1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 50
0.2 0.3 0.5 0.7
C
cb
20
30
C
eb
Figure 10. Current–Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f
T
, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20
30 50 70 100
VCE = 20 V TJ = 25
°
C
Page 5
P2N2222A
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
V
BE(sat)
@ IC/IB = 10
V
CE(sat)
@ IC/IB = 10
V
BE(on)
@ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
–0.5
0
+0.5
COEFFICIENT (mV/ C)
–1.0
–1.5
–2.5
°
R
q
VC
for V
CE(sat)
R
q
VB
for V
BE
0.1 1.0 2.0 5.0 10 20
50
0.2 0.5
100 200 500 1.0 k
1.0 V
–2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
Page 6
P2N2222A
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
X X
SEATING PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.022 0.41 0.55 F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 ––– 12.70 ––– L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.66 P ––– 0.100 ––– 2.54 R 0.115 ––– 2.93 ––– V 0.135 ––– 3.43 –––
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
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P2N2222A/D
*P2N2222A/D*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
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