Datasheet P2680-02, P2680-03, P2038-03, P3207-05, P2038-02 Datasheet (HAMAMATSU)

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Page 1
INFRARED DETECTOR
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
Detection capability up 5 µm range (TE-cooled type)
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in analytical instruments.
Features
l
High-speed response
l
Room temperature operation Compared to other types of detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at room temperature, making them useful in a wide range of applications such as gas analyzers, etc.
l
Lower temperature detection limit: 50 ˚C approx.
Specification / Absolute maximum ratings
Type No.
P791-11 2 × 2 P791-13 P3207-05 P2038-02 2 × 2 P2038-03 P2680-02 2 × 2 P2680-03
Dimensional
outline
Package Cooling
TO-5 Non-cooled
One-stage
TO-8
TE-cooled Two-stage TE-cooled
Active
area
(mm)
3 × 3 2 × 2
3 × 3
3 × 3
Applications
l
Radiation thermometer
l
Flame detector
l
Gas analyzer
l
Film thickness gauge
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller for TE-cooled type C1103-04
l
Preamplifier for PbS/PbSe photoconductive detector C3757-02
l
Infrared detector module with preamp Non-cooled type
Absolute maximum ratings
Thermistor
resistance
(kW)
Thermistor
power
dissipation
TE-cooler
current
dissipation
(mW) (A) (V) (°C) (°C)
-- -
1.5
90.2
1.0
Cooled type P4639
Supply
voltage
Operating
temperature
Topr
Storage
temperature
Tstg
100 -30 to +50 -55 to +60
P4245
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
condition
Element
Type No.
temperature
T
(°C) (µm) (µm) P791-11 7 × 10 1 × 10 P791-13 P3207-05 *
P2038-02 2.2 × 10!3 × 10 P2038-03 P2680-02 2.7 × 10!4 × 10 P2680-03
25
-10 4.1 5.1
-20 4.2 5.2
*1: Half width 400 nm *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
Peak
sensitivity
wavelength
lp
4.0
4.3
Cut-off
wavelength
lc
4.8
Photo sensitivity
S *
l=lp
Vs=15 V
Min.
(V/W)
3 × 10 5 × 10 7 × 10
Typ.
(V/W)
1 × 10
1 × 10!1 × 10
1.2 × 10!2 × 10
!
!
!
!
!
!
*
D
(500, 600, 1)
Min.
(cm·Hz
5 × 10
1/2
/W)
%
Typ.
(cm·Hz
1 × 10
1/2
/W) (cm· Hz
&
- - 8 × 10
1 × 10
2 × 10
&
&
3 × 10
4 × 10
&
&
(lp, 600, 1)
1 × 10
3 × 10
4 × 10
D
tr
Rise time
*
0 to 63 %
/W)
'
&
'
'
Max.
(µs)
3 0.3 to 1.5
5
1/2
Dark
resistance
Rd
(MW)
1.7 to 7.0
1.8 to 8.0
1
Page 2
PbSe photoconductive detector
Spectral response
P791/P2038/P2680 series P3207-05
100
P791/P2038/P2680 series, P3207-05
(Typ.)
100
(Typ.)
80
60
-10 ˚C
40
RELATIVE VALUE (%)
20
0
1234567
25 ˚C
WAVELENGTH (µm)
S/N vs. supply voltage
600
LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 16.7 µW/cm CHOPPING FREQUENCY: 600 Hz
500
FREQUENCY BANDWIDTH: 60 Hz Supply voltage is the value which contains
400
load resistance
300
SIGNAL (µV)
200
100
S
N
-20 ˚C
(Typ. Ta=25 ˚C)
2
80
60
40
RELATIVE VALUE (%)
20
0
1234567
KIRDB0280EA KIRDB0281EA
WAVELENGTH (µm)
S/N vs. chopping frequency
3
18
15
12
9
NOISE (µV)
6
3
10
LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 16.7 µW/cm SUPPLY VOLTAGE: 15 V
2
10
RELATIVE S/N
(Typ. Ta=25 ˚C)
2
S/N
S
N
1
0
0
10 20 30 40 50 60
SUPPLY VOLTAGE (V)
0
10070 80 90
KIRDB0052EC
10
2
10
CHOPPING FREQUENCY (Hz)
3
10
4
10
KIRDB0053EB
Increasing the chopping frequency re­duces the 1/f noise and results in an S/N improvement. The S/N can also be im­proved by narrowing the noise bandwidth using a lock-in amplifier.
Photo sensitivity temperature characteristic Dark resistance, rise time temperature characteristics
3
10
2
10
LIGHT SOURCE: BLACK BODY 500 K SUPPLY VOLTAGE: 15 V INCIDENT ENERGY: 16.7 µW/cm CHOPPING FREQUENCY: 600 Hz
RELATIVE SENSITIVITY
1
10
-20
-100 102030405060
ELEMENT TEMPERATURE (˚C)
Cooling the device enhances its sensi­tivity, but the sensitivity also depends on the load resistance in the circuit.
(Typ.)
2
KIRDB0054EB
3
10
2
10
RISE TIME
RELATIVE VALUE
1
10
ELEMENT TEMPERATURE (˚C)
DARK RESISTANCE
02010 40 5030 60-20 -10
(Typ.)
KIRDB0055EB
2
Page 3
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
Photo sensitivity linearity
2
10
1
10
0
10
-1
10
RELATIVE SENSITIVITY
-2
10
-3
10
-7
10
(Typ. Ta=25 ˚C, FULLY ILLUMINATED)
DEPENDENT ON NEP
-6
-5
-4
10
10
10
-3
10
INCIDENT ENERGY (W/cm2)
By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower.
-2
10
KIRDB0056EA
Current vs. voltage characteristics of the TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.6
1.4
1.2
ONE-STAGE TE-COOLED
1.0
0.8
0.6
CURRENT (A)
0.4
0.2
0
0 0.80.60.40.2 1.21.0
VOLTAGE (V)
TWO-STAGE TE-COOLED
KIRDB0115EB
Cooling characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
40
C)
˚
20
0
-20
TWO-STAGE
-40
ELEMENT TEMPERATURE (
TE-COOLED
-60 0 0.4 0.8 1.2 1.60.2 0.6 1.0 1.4
ONE-STAGE TE-COOLED
CURRENT (A)
Thermistor temperature characteristic
6
10
5
10
4
10
RESISTANCE ()
3
10
-40 -20 0 20-30 -10 10 30
ELEMENT TEMPERATURE (˚C)
(Typ.)
KIRDB0185EA
KIRDB0116EA
Connection example (P2680-03)
P2680-03
+
A3179-01
DETECTOR AND
C4696
CHOPPER
HEATSINK
BNC CONNECTOR CABLE (SOLD SEPARATELY)
2-CONDUCTOR SHIELDED CABLE
C3757-02
C1103-04
CABLE (SUPPLIED WITH C1103-04)
Connect C1103-04 and C3871 ground terminals together.
CABLE (SUPPLIED WITH C3757-02)
POWER SUPPLY FOR PREAMP
C3871
AMP
LOCK-IN AMP or SPECTRUM ANALYZER
TEMPERATURE CONTROLLER
SIGNAL
PROCESSING
CIRCUIT
KIRDC0045EA
3
Page 4
PbSe photoconductive detector
■■
Dimensional outlines (unit: mm)
■■
P791/P2038/P2680 series, P3207-05
P791-11/-13 P3207-05
PHOTOSENSITIVE SURFACE
0.45 LEAD
5.1 ± 0.2
1.5 MAX.
9.1 ± 0.3
8.1 ± 0.1
WINDOW
5.5 ± 0.1
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
4.2 ± 0.2
2.1 ± 0.2
18 MIN.
0.4 MAX.
DETECTOR DETECTOR GND
6.4 ± 0.212 MIN.
9.1 ± 0.3
8.1 ± 0.1 WINDOW
0.45 LEAD
5.5 ± 0.1
2.1 ± 0.20.4 MAX.
3.0 ± 0.2
18 MIN.
DETECTOR DETECTOR GND
4.2 ± 0.2
FILTER
PHOTOSENSITIVE SURFACE
5.1 ± 0.2
1.5 MAX.
KIRDA0056EC KIRDA0118EA
P2680-02/-03➂ P2038-02/-03
15.3 ± 0.2
14 ± 0.2
WINDOW 10 ± 0.2
10 ± 0.212 MIN.
PHOTOSENSITIVE SURFACE
0.45 LEAD
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4.3 ± 0.2
DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
PHOTOSENSITIVE SURFACE
0.45 LEAD
5.1 ± 0.2
5.1 ± 0.2
6.7 ± 0.2
10.2 ± 0.2
DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR
4
KIRDA0125EAKIRDA0128EA
Cat. No. KIRDA1020E04
Dec. 2002 DN
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