Detection capability up 5 µm range (TE-cooled type)
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.
Features
l
High-speed response
l
Room temperature operation
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.
*1: Half width 400 nm
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
Peak
sensitivity
wavelength
lp
4.0
4.3
Cut-off
wavelength
lc
4.8
Photo sensitivity
S *
l=lp
Vs=15 V
Min.
(V/W)
3 × 10 5 × 10
7 × 10
Typ.
(V/W)
1 × 10
1 × 10!1 × 10
1.2 × 10!2 × 10
!
!
!
!
!
!
*
D
(500, 600, 1)
Min.
(cm·Hz
5 × 10
1/2
/W)
%
Typ.
(cm·Hz
1 × 10
1/2
/W) (cm· Hz
&
--8 × 10
1 × 10
2 × 10
&
&
3 × 10
4 × 10
&
&
(lp, 600, 1)
1 × 10
3 × 10
4 × 10
D
tr
Rise time
*
0 to 63 %
/W)
'
&
'
'
Max.
(µs)
30.3 to 1.5
5
1/2
Dark
resistance
Rd
(MW)
1.7 to 7.0
1.8 to 8.0
1
Page 2
PbSe photoconductive detector
■ Spectral response
P791/P2038/P2680 seriesP3207-05
100
P791/P2038/P2680 series, P3207-05
(Typ.)
100
(Typ.)
80
60
-10 ˚C
40
RELATIVE VALUE (%)
20
0
1234567
25 ˚C
WAVELENGTH (µm)
■ S/N vs. supply voltage
600
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 µW/cm
CHOPPING FREQUENCY: 600 Hz
500
FREQUENCY BANDWIDTH: 60 Hz
Supply voltage is the
value which contains
400
load resistance
300
SIGNAL (µV)
200
100
S
N
-20 ˚C
(Typ. Ta=25 ˚C)
2
80
60
40
RELATIVE VALUE (%)
20
0
1234567
KIRDB0280EAKIRDB0281EA
WAVELENGTH (µm)
■ S/N vs. chopping frequency
3
18
15
12
9
NOISE (µV)
6
3
10
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 µW/cm
SUPPLY VOLTAGE: 15 V
2
10
RELATIVE S/N
(Typ. Ta=25 ˚C)
2
S/N
S
N
1
0
0
10 20 30 40 50 60
SUPPLY VOLTAGE (V)
0
10070 80 90
KIRDB0052EC
10
2
10
CHOPPING FREQUENCY (Hz)
3
10
4
10
KIRDB0053EB
Increasing the chopping frequency reduces the 1/f noise and results in an S/N
improvement. The S/N can also be improved by narrowing the noise bandwidth
using a lock-in amplifier.
■ Photo sensitivity temperature characteristic■Dark resistance, rise time temperature characteristics
3
10
2
10
LIGHT SOURCE: BLACK BODY 500 K
SUPPLY VOLTAGE: 15 V
INCIDENT ENERGY: 16.7 µW/cm
CHOPPING FREQUENCY: 600 Hz
RELATIVE SENSITIVITY
1
10
-20
-100 102030405060
ELEMENT TEMPERATURE (˚C)
Cooling the device enhances its sensitivity, but the sensitivity also depends
on the load resistance in the circuit.
(Typ.)
2
KIRDB0054EB
3
10
2
10
RISE TIME
RELATIVE VALUE
1
10
ELEMENT TEMPERATURE (˚C)
DARK RESISTANCE
0201040503060-20 -10
(Typ.)
KIRDB0055EB
2
Page 3
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
■ Photo sensitivity linearity
2
10
1
10
0
10
-1
10
RELATIVE SENSITIVITY
-2
10
-3
10
-7
10
(Typ. Ta=25 ˚C, FULLY ILLUMINATED)
DEPENDENT ON NEP
-6
-5
-4
10
10
10
-3
10
INCIDENT ENERGY (W/cm2)
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
-2
10
KIRDB0056EA
■ Current vs. voltage characteristics of the TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.6
1.4
1.2
ONE-STAGE
TE-COOLED
1.0
0.8
0.6
CURRENT (A)
0.4
0.2
0
00.80.60.40.21.21.0
VOLTAGE (V)
TWO-STAGE
TE-COOLED
KIRDB0115EB
■ Cooling characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
40
C)
˚
20
0
-20
TWO-STAGE
-40
ELEMENT TEMPERATURE (
TE-COOLED
-60
00.40.81.21.60.20.61.01.4
ONE-STAGE
TE-COOLED
CURRENT (A)
■ Thermistor temperature characteristic
6
10
5
10
4
10
RESISTANCE (Ω)
3
10
-40-20020-30-101030
ELEMENT TEMPERATURE (˚C)
(Typ.)
KIRDB0185EA
KIRDB0116EA
■ Connection example (P2680-03)
P2680-03
+
A3179-01
DETECTOR AND
C4696
CHOPPER
HEATSINK
BNC CONNECTOR CABLE
(SOLD SEPARATELY)
2-CONDUCTOR
SHIELDED CABLE
C3757-02
C1103-04
CABLE (SUPPLIED WITH C1103-04)
Connect C1103-04 and C3871
ground terminals together.
CABLE (SUPPLIED WITH C3757-02)
POWER SUPPLY FOR PREAMP
C3871
AMP
LOCK-IN AMP or
SPECTRUM ANALYZER
TEMPERATURE
CONTROLLER
SIGNAL
PROCESSING
CIRCUIT
KIRDC0045EA
3
Page 4
PbSe photoconductive detector
■■
■
Dimensional outlines (unit: mm)
■■
P791/P2038/P2680 series, P3207-05
➀ P791-11/-13➁ P3207-05
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.2
1.5 MAX.
9.1 ± 0.3
8.1 ± 0.1
WINDOW
5.5 ± 0.1
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
4.2 ± 0.2
2.1 ± 0.2
18 MIN.
0.4 MAX.
DETECTOR
DETECTOR
GND
6.4 ± 0.212 MIN.
9.1 ± 0.3
8.1 ± 0.1
WINDOW
0.45
LEAD
5.5 ± 0.1
2.1 ± 0.20.4 MAX.
3.0 ± 0.2
18 MIN.
DETECTOR
DETECTOR
GND
4.2 ± 0.2
FILTER
PHOTOSENSITIVE
SURFACE
5.1 ± 0.2
1.5 MAX.
KIRDA0056ECKIRDA0118EA
➃ P2680-02/-03➂ P2038-02/-03
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
10 ± 0.212 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741