Datasheet P2532-01, P2682-01 Datasheet (HAMAMATSU)

INFRARED DETECTOR

y

PbS photoconductive detector

P2532-01

,

P2682-01

Infrared detectors utilizing photoconductive effects

Features

l

Room temperature operation
Makes PbS cells useful in a wide range of applications

including radiation thermometers and flame monitors

l

High sensitivity

l

Large active area

l

Low price

l

Lower temperature detection limit: 100 ˚C

l

Thermoelectrically cooled types
Cooling a PbS cell increases sensitivity and improves
S/N, so cooled types are widely used in precision
photometry such as in analytical instruments.

Applications

l

Radiation thermometers

l

Flame monitors

l

Water content analyzers

l

Food ingredient analysis

l

Spectrophotometers

Accessories (Optional)

l

Heatsink for one-stage TE-cooled type A3179

l

Heatsink for two-stage TE-cooled type A3179-01

l

Temperature controller for TE-cooled type C1103-04

l

Preamplifier for PbS/PbSe photoconductive detector C3757-02

l

Power supply for amplifier C3871

l

Infrared detector module with preamp

Cooled type P4638

■ Specification / Absolute maximum ratings

Absolute maximum ratings

TE-cooler

current

dissipation

1.5

1.0

Type No.

P2532-01

P2682-01

Dimensional

outline/

Window

material *

/S

➀

/S

➁

Package Cooling

1

One-stage

TO-8

TE-cooled
Two-stage
TE-cooled

Active

(mm)

4 × 5 9 0.2

area

Thermistor

resistance

(kΩ)

Thermistor

power

dissipation

(mW) (A) (V) (°C) (°C)

■ Electrical and optical characteristics (Typ. unless otherwise noted)

p

Typ.

(V/W)

8 × 10

2

*

Min.

(cm· Hz

4

5 × 10

∗

D

(500, 600, 1)

1/2

/W)

8

8

Typ.

(cm· Hz

1 × 10
2 × 10

1/2

/W) (cm·Hz

9

9

Measurement

condition

Type No.

P2532-01 -10 2.4 3.1 3 × 10
P2682-01 -20 2.5 3.2 6 × 1041.6 × 1058 × 10

*1: Window material S: sapphire glass
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance

Element

temperature

(°C) (µm) (µm)

Peak

sensitivity

wavelength

p

λ

Cut-off

wavelength

c

λ

Photo sensitivit

S

λ=λ

Vs=15 V

Min.

(V/W)

4

Supply

voltage

100

∗

D

(λp, 600, 1)

1/2

/W)

11

1 × 10

11

2 × 10

tr

Storage

temperature

Tstg

Dark

resistance

Rd

(MΩ)

0.5 to 10

0.8 to 10

Operating

temperature

Topr

-30 to +50 -55 to +50

Rise time

0 to 63 %

Max.

(µs)

600

1

PbS photoconductive detector

P2532-01, P2682-01

■ Spectral response

100

80

60

25 ˚C

40

RELATIVE VALUE (%)

20

0

1423 5

-20 ˚C

-10 ˚C

WAVELENGTH (µm)

■ S/N vs. chopping frequency

3

10

LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
SUPPLY VOLTAGE: 15 V
tr: 200 µs

S/N

(Typ. Ta=25 ˚C)

2

(Typ.)

KIRDB0279EA

■ S/N vs. supply voltage

800

SIGNAL

600

400

SIGNAL (µV)

200

00

0

LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz

10 20

NOISE

30

(Typ. Ta=25 ˚C)

2

40 50 60

8

7

6

5

4

3

2

1

SUPPLY VOLTAGE (V)

If voltage of higher than 60 V is applied,
the noise increases exponentially, de­grading the S/N. The device should be
operated at 60 V or less.

■ Photo sensitivity temperature characteristic

3

10

(Typ.)

NOISE (µV)

KIRDB0046EA

S

2

10

2

10

RELATIVE S/N

RELATIVE SENSITIVITY

LIGHT SOURCE: BLACK BODY 500 K

N

1

10

1

10

2

10

CHOPPING FREQUENCY (Hz)

Increasing the chopping frequency re­duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-

3

10

KIRDB0047EB

INCIDENT ENERGY: 4.8 µW/cm
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V

1

10

-20

-100 102030405060

ELEMENT TEMPERATURE (˚C)

Cooling the device enhances its sensi­tivity, but the sensitivity also depends

on the load resistance in the circuit.
proved by narrowing the noise bandwidth
using a lock-in amplifier.

■ Dark resistance, rise time temperature characteristics ■ Photo sensitivity linearity

3

10

2

10

RISE TIME

RELATIVE VALUE

DARK RESISTANCE

(Typ.)

2

10

1

10

0

10

-1

10

RELATIVE OUTPUT

-2

10

(Typ. Ta=25 ˚C, FULLY ILLUMINATED)

2

KIRDB0048EB

1

10

-10 0 10 20 30 40 50 60-20

ELEMENT TEMPERATURE (˚C)

10

KIRDB0049EB

DEPENDENT ON NEP

-3

-9

10

10-810

INCIDENT ENERGY (W/cm2)

-7

-6

-5

10

10

-4

10

KIRDB0050EA

By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.

2

PbS photoconductive detector

P2532-01, P2682-01

■ Cooling characteristics of TE-cooler ■ Current vs. voltage char acteristics of TE-cooler

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

40

20

0

-20
TWO-STAGE

TE-COOLED

-40

ELEMENT TEMPERATURE (˚C)

-60

0 0.80.60.40.2 1.61.41.21.0

ONE-STAGE
TE-COOLED

CURRENT (A)

■ Thermistor temperature characteristic

6

10

5

10

(Typ.)

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

1.6

1.4

1.2

1.0

0.8

0.6

CURRENT (A)

0.4

0.2

ONE-STAGE
TE-COOLED

TWO-STAGE
TE-COOLED

0

0 0.80.60.40.2 1.21.0

VOLTAGE (V)

KIRDB0171EA KIRDB0115EB

4

10

RESISTANCE (Ω)

3

10

-40 -30 0-20 2010-10 30

ELEMENT TEMPERATURE (˚C)

■ Connection example (P2682-01)

P2682-01

+

A3179-01

DETECTOR AND

C4696

CHOPPER

HEATSINK

BNC CONNECTOR CABLE
(SOLD SEPARATELY)

KIRDB0116EA

2-CONDUCTOR
SHIELDED CABLE

C3757-02

C1103-04
CABLE (SUPPLIED WITH C1103-04)
Connect C1103-04 and C3871

ground terminals together.

CABLE (SUPPLIED WITH C3757-02)

POWER SUPPLY FOR PREAMP

C3871

AMP

LOCK-IN AMP or
SPECTRUM ANALYZER

TEMPERATURE
CONTROLLER

SIGNAL

PROCESSING

CIRCUIT

KIRDC0003EA

3

■■

■

Dimensional outlines (unit: mm)

■■

PbS photoconductive detector

P2532-01, P2682-01

➀ P2532-01

PHOTOSENSITIVE
SURFACE

0.45
LEAD

5.1 ± 0.2

5.1 ± 0.2

15.3 ± 0.2
14 ± 0.2

WINDOW
10 ± 0.2

10.2 ± 0.2

6.4 ± 0.212 MIN.

4.5 ± 0.2

DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR

KIRDA0116EA

➁ P2682-01

PHOTOSENSITIVE
SURFACE

0.45
LEAD

5.1 ± 0.2

5.1 ± 0.2

15.3 ± 0.2
14 ± 0.2

WINDOW
10 ± 0.2

10 ± 0.212 MIN.

6.9 ± 0.2

10.2 ± 0.2

DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR

KIRDA0117EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.

4

Cat. No. KIRD1019E06
Sep. 2003 DN