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P2003BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
PDFN 3x3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
Continuous Drain Current
Power Dissipation
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Energy
LIMITS
°C
-55 to 150
mJ
UNITS
70
V
A
8
3.125
±20
I
D
P
D
10
30
V
GS
2
10
25
I
DM
28
TC = 25 °C
E
AS
L = 0.1mH
18
TJ, T
STG
TC = 25 °C
TC = 100 °C
W
Avalanche Current
I
AS
Operating Junction & Storage Temperature Range
I
D
30V
SYMBOL
V
DS
Pulsed Drain Current
1
23
21.5
R
DS(ON)
TC = 100 °C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
20mΩ @V
GS
= 10V
10A
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P2003BEA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
UNITS
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN TYP MAX
30
1 1.5 2.5
±100 nA
1
10
70
A
23 31
14 20
13 S
484
169
106
1.75Ω10
4.423
5416
3
Steady-State
Junction-to-Ambient
Total Gate Charge
2
Qg(VGS=4.5V)
Junction-to-Case
Junction-to-Ambient
t ≦10s
Steady-State
75
°C / W
R
qJC
5
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
Gate Threshold Voltage
DYNAMIC
V
I
GSS
I
DSS
mA
VDS = 24V, VGS = 0V
mΩ
On-State Drain Current
1
QgdQ
gs
nC
VGS = 0V, VDS = 15V, f = 1MHz
pF
C
issCoss
Qg(VGS=10V)
VDS = 0.5V
(BR)DSS
, ID = 8A
C
rss
Drain-Source Breakdown Voltage
VGS = 4.5V, ID = 6A
VDS = 10V, ID = 8A
V
GS(th)
Forward Transconductance
1
VGS = 0V, ID = 250mA
V
(BR)DSS
Zero Gate Voltage Drain Current
Gate-Body Leakage
g
fs
STATIC
LIMITS
MAXIMUM
R
qJA
UNIT
R
qJA
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Input Capacitance
Output Capacitance
Gate-Drain Charge
2
Gate-Source Charge
2
THERMAL RESISTANCE
SYMBOL
TYPICAL
PARAMETER
SYMBOL
TEST CONDITIONS
t
f
Fall Time
2
nS
VDD = 15V,ID @ 8A,
V
GEN
= 10V, R
G
= 3Ω
t
d(on)trtd(off)
I
D(ON)
VDS = 5V, VGS = 10V
Drain-Source On-State
Resistance
1
R
DS(ON)
VGS = 10V, ID = 8A
Gate Resistance
R
g
VGS = 0V, VDS = 0V, f = 1MHz
Reverse Transfer Capacitance
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P2003BEA
N-Channel Enhancement Mode MOSFET
2.2A1.4
V20nS10nC
1
Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2
Independent of operating temperature.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
IF = 8A, VGS = 0V
IF = 8A, dlF/dt = 100A / mS
Reverse Recovery Charge
Q
rr
Continuous Current
I
S
Forward Voltage
1
V
SD
Reverse Recovery Time
t
rr
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P2003BEA
N-Channel Enhancement Mode MOSFET
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P2003BEA
N-Channel Enhancement Mode MOSFET
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P2003BEA
N-Channel Enhancement Mode MOSFET
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