Page 1
NIKO
-
SEM
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
P-Channel Logic Level Enhancement
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
D
PRODUCT SUMMARY
V
(BR)DSS
-30
R
DS(ON)
14mΩ
ID
-11
G
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
S
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C Unless O therwise Noted)
A
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
100% UIS tested
TA = 25 °C -11
Continuous Drain Current
= 70 °C
T
A
I
D
Pulsed Drain Current1 IDM -50
Avalanche Current IAS -43
Avalanche Energy L = 0.1mH EAS 90
TA = 25 °C 2.5
Power Dissipation
= 70 °C
T
A
Operating Junction & Storage Temperature Range Tj, T
P
D
-55 to 150
stg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
R
Junction-to-Ambient R
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
= 25 °C, Unless Otherwise Noted)
A
PARAMETER SYMBOL
θJ
c
θJA
TEST CONDITIONS
STATIC
25 °C / W
50 °C / W
MIN
-9
1.6
LIMITS
TYP MAX
A
mJ
W
°C
UNIT
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
REV 1.3
(BR)DSS
GS(th)
VDS = 0V, VGS = ±25V ±100 nA
GSS
V
= 0V, ID = -250µA
GS
V
= VGS, ID = -250µA
DS
-30
-1
-1.7 -3
VDS = -24V, VGS = 0V -1
DSS
V
= -20V, VGS = 0V, TJ = 125 °C
DS
-10
1
V
µA
Jun-22-2010
Page 2
NIKO
-
SEM
mΩ
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
Drain-Source On-State
Resistance
1
P-Channel Logic Level Enhancement
Field Effect Transistor
R
DS(ON)
VGS = -4.5V, ID = -9A 14 22
V
= -10V, ID = -12A 9 14
GS
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
Forward Transconductance1 gfs VDS = -10V, ID = -12A 28
DYNAMIC
(BR)DSS
= -12A
I
D
, VGS = -10V,
349
48
26
9
50
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Resistance
Q
Total Gate Charge2
Q
Gate-Source Charge2 Qgs 7
Gate-Drain Charge2 Qgd
Turn-On Delay Time2 t
Rise Time2 tr VDS = -15V, 16
Turn-Off Delay Time2 t
Fall Time2 tf 100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current IS -2.1 A
2510
iss
V
449
oss
rss
Rg V
g(VGS=10V)
g(VGS=4.5V)
12
d(on)
d(off)
= 0V, VDS = -15V, f = 1MHz
GS
= 0V, VDS = 0V, f = 1MHz 7.3
GS
VDS = 0.5V
I
≅ -1A, VGS = -10V, RGS = 6Ω
D
S
pF
Ω
nC
nS
Forward Voltage1 VSD IF = IS, VGS = 0V -1.2 V
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “P1403EVG”, DATE CODE or LOT #
REV 1.3
Jun-22-2010
2
Page 3
NIKO
-
SEM
Output
Characteristics
On-Resistance
VS Drain Current
-
I
D
, Drain
-To-
Source Current
On-Resistance
VS Gate
-To-
Source
On-Resistance VS Temperature
Transfer
Characteristics
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
P-Channel Logic Level Enhancement
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
50
40
30
20
V
GS
= 10 V
V
GS
= 4.5V
V
GS
= 7V
V
GS
10
, Drain-To-Source Current(A)
D
-I
0 1 2 3 4 5
-VDS, Drain-To-Source Voltage(V)
0.05
0.04
0.03
0.02
ON-Resistance(OHM)
0.01
DS(ON)
R
0
0 2 4 6 8 10
-VGS, Gate-To-Source Voltage(V)
= 3V
ID = -12A
0.040
0.035
0.030
0.025
0.020
0.015
ON-Resistance(OHM)
0.010
DS(ON)
R
0.005
RDS(ON) x 1.6
DS(ON) x 1.4
R
RDS(ON) x 1.2
DS(ON) x 1.0
R
R
DS(ON) x 0.8
ON-Resistance(OHM)
R
DS(ON) x 0.6
DS(ON)
R
RDS(ON) x 0.4
V
GS
= 4.5V
V
GS
= 10V
0
- 50 - 25 0 25 50 75 100
TJ , Junction Temperature(˚C)
V
GS
D
= -12A
I
125
= 10V
150
50
VDS= -10V
40
30
20
10
, Drain-To-Source Current(A)
D
-I
0
1.0
REV 1.3
T
j
=25 ° C
Tj=125° C
1.5
-VGS, Gate-To-Source Voltage(V)
j
=-20° C
T
Gate charge Characteristics
10
8
ID = 12A
V
DS
= 15V
6
4
2
, Gate-To-Source Voltage(V)
GS
-V
5.02.0 2.5 3.0 3.5 4.0 4.5
0
0 10 20 30 40 50
Qg , Total Gate Charge(nC)
Jun-22-2010
3
Page 4
NIKO
-
SEM
↓↓↓↓
Capacitance Characteristic
Transient Thermal Response Curve
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
P-Channel Logic Level Enhancement
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
3.00E-09
2.50E-09
2.00E-09
1.50E-09
1.00E-09
C , Capacitance(pF)
5.00E-10
f = 1MHz
GS
= 0V
V
0.00E+00
0 5 10 15 20 25 30
-VDS, Drain-To-Source Voltage(V)
100
Safe Operating Area
10
Operat ion in This Are a
is Lim ited by R
1
DS(ON)
0.1
, Drain Current(A)
D
-I
NOTE :
1.V
= 10V
GS
=25
C
2.T
A
˚˚˚˚
3.R
= 50
C/W
θJA
˚˚˚˚
4.Single Puls e
0.01
0.1 1 1 0 100
-VDS, Drain-To-Source Voltage(V)
CISS
COSS
CRSS
100us
1ms
10ms
100ms
1S
10S
DC
Body Diode Forward Voltage VS Source current
1 . 0 E + 0 2
1 .0 E +0 1
T
J
1 .0 E + 0 0
1 . 0 E -0 1
1 . 0 E -0 2
1 .0 E -0 3
, Source Current(A)
S
1 . 0 E- 04
-I
1 . 0 E -0 5
0 . 0
0 . 2 0 .4 0 .6 0 .8 1 .0 1 . 2
-VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
500
400
300
200
Power(W)
100
0
0.0001 0.001 0 .01 0.1 1 10
= 1 5 0° C
SINGLE PULSE
= 50
R
θJA
T
=25
A
J
= 2 5 ° C
T
˚˚˚˚
C
˚˚˚˚
C/W
r(t) , Normalized Effective
Transient Thermal Resistance
REV 1.3
T
1
, Square Wave Pulse Duration[sec]
4
Jun-22-2010
Page 5
NIKO
-
SEM
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
P-Channel Logic Level Enhancement
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
REV 1.3
Jun-22-2010
5
Page 6
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