Datasheet P1403EV8 Datasheet (Unikc)

P1403EV8

P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V

(BR)DSS

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1

Pulse width limited by maximum junction temperature.

2

Limited only by maximum temperature allowed

THERMAL RESISTANCE

R

qJC

UNITS

-65

-10

-12

±20

-30

LIMITS

V

A

SYMBOL

P

D

TJ, T

STG

TYPICAL

2

SYMBOL

VGSV

DS

I

D

I

DM

Continuous Drain Current

2

TA = 25 °C

°C

-55 to 150

TA = 25 °C

TA = 70 °C

Power Dissipation

mJ

W

E

AS

- 12A
3

R

DS(ON)

TA = 70 °C

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

Gate-Source Voltage

I

D

-30V
25

40

14mΩ @V

GS

= -10V

Avalanche Energy

L = 0.1mH

Pulsed Drain Current

1 , 2

89

-39

Avalanche Current

I

AS

R

qJA

Junction-to-Ambient

Junction-to-Case

MAXIMUM

Operating Junction & Storage Temperature Range

°C / W

Ver 1.0 1 2012/4/13

P1403EV8

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN TYP MAX

-30

-1 -1.5 -3

±100 nA

-1

-10

17.8 22

11.3 14

28 S

2260

410

204

4.8 Ω

3876121650100

-2.5 A

-1.2 V

1

Pulse test : Pulse Width  300 msec, Duty Cycle  2％.

2

Independent of operating temperature.

Gate Resistance

RgVGS = 0V, VDS = 0V, f = 1MHz

Zero Gate Voltage Drain Current

mA

I

GSS

Gate Threshold Voltage

Drain-Source Breakdown Voltage

V

GS(th)

I

DSS

VDS = -30V, VGS = 0V , TJ = 125 °C

VDS = VGS, ID = -250mA

VDS = 0V, VGS = ±20V

PARAMETER

SYMBOL

Forward Transconductance

1

gfsVDS = -10V, ID = -12A

TEST CONDITIONS

STATIC

LIMITS

UNIT

VGS = 0V, ID = -250mA

V

(BR)DSS

Gate-Body Leakage

DYNAMIC

Input Capacitance

C

iss

VGS = 0V, VDS = -15V, f = 1MHz

pF

Output Capacitance

C

oss

Reverse Transfer Capacitance

C

rss

Total Gate Charge

2

Q

g

VDS = 0.5

V(BR)DSS

,

ID = -12A, V

GS

= -10V

nC

Gate-Source Charge

2

Q

gs

Gate-Drain Charge

2

Q

gd

Turn-On Delay Time

2

t

d(on)

VDD = -20V, ID = -10A, VGS = -10V,

RG=6Ω

nS

Rise Time

2

t

r

Turn-Off Delay Time

2

t

d(off)

Fall Time

2

t

f

Forward Voltage

1

V

SDIF

= -10A, VGS = 0V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

ISVDS = -32V, VGS = 0V

mΩ

Drain-Source On-State
Resistance

1

VGS = -10V, ID = -12A

R

DS(ON)

VGS = -4.5V, ID = -9A

V

Ver 1.0 2 2012/4/13

P1403EV8

P-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/13

P1403EV8

P-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/13

P1403EV8

P-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/13