Datasheet P132, P122 Specification

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Features

Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 V
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved

RRM

, V

DRM

Description

The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli­fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir­cuits and battery chargers.

Bulletin I27125 rev. A 04/99

P100 SERIES

25A

Major Ratings and Characteristics

Parameters P100 Units

I

D

@ T

C

I

FSM

I2t@

2

√t 6365 A2√s

I
V

RRM

V

INS

T

J

@ 50Hz 357 A
@ 60Hz 375 A

50Hz 637 A2s

@ 60Hz 580 A

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25 A
85 °C

400 to 1200 V

2500 V

- 40 to 125 °C

2

s

1

P100 Series

Bulletin I27125 rev. A 04/99

ELECTRICAL SPECIFICATIONS

Voltage Ratings

V

maximum repetitive V

Type number peak reverse voltage repetitive peak reverse repetitive peak off-state

RRM

VVVmA

P101, P121, P131 400 50 0 40 0 10
P102, P122, P132 600 70 0 60 0
P103, P123, P133 800 90 0 80 0
P104, P124, P134 1000 1100 1000
P105, P125, P135 1200 1300 1200

On-state Conduction

Parameter P100 Units Conditions

I

Maximum DC output current 25 A @ TC = 85°C, full bridge

D

I

Max. peak one-cycle 35 7 t = 10ms No voltage

TSM

I

non-repetitive on-state 375 t = 8.3ms reapplied

FSM

or forward current 30 0 t = 10ms 100% V

315 t = 8.3ms reapplied Sinusoidal half wave,

2

I

t Maximum I2t for fusing 637 t = 10ms No voltage Initial TJ = TJ max.

580 t = 8. 3 m s reapplied
450 t = 10ms 100% V
410 t = 8.3ms reapplied

I2√t Maximum I2√t for fusing 6365 A2√s t = 0.1 to 10ms, no voltage reapplied

V

Max. value of threshold voltage 0.82 V TJ = 125°C

T(TO)

r

Max. level value of on-state

t1

slope resistance

V

Max. peak on-state or

TM

forward voltage drop

V

FM

di/dt Maximum non repetitive rate of T

rise of turned on current I

I

Maximum holding current 13 0 mA TJ = 25°C anode supply = 6V, resistive load, gate open

H

Maximum latching current 25 0 mA TJ = 25°C anode supply = 6V, resistive load

I

L

12 mΩ TJ = 125°C, Av. power = V

1.35 V TJ = 25°C, ITM = π x I

200 A/µs

maximum non- V

RSM

voltage voltage

A

A2s

I2t for time tx = I2√t . √tx

= 125°C from 0.67 V

J

= π x I

, Ig = 500mA, tr < 0.5µs, tp > 6µs

T(AV)

TM

maximum I

DRM

RRM

RRM

* I

T(TO)

T(AV)

DRM

T(AV)

+ rt + (I

max.

RRM

@ TJ max.

)

T(RMS)

2

2

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Bulletin I27125 rev. A 04/99

Blocking

Parameter P100 Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

I

Max. peak reverse and off-state

RRM

I

leakage current at V

DRM

I

Max peak reverse leakage current 100 µA TJ = 25°C

RRM

V

RMS isolation voltage 2500 V

INS

RRM

, V

DRM

200 V/µs TJ = 125°C, exponential to 0.67 V

10 mA TJ = 125°C, gate open circuit

50Hz, circuit to base, all terminal shorted,
T

= 25°C, t = 1s

J

Triggering

Parameter P100 Units Conditions

P

Maximum peak gate power 8

GM

P

Maximum average gate power 2

G(AV)

Maximum peak gate current 2 A

I

GM

- V

Maximum peak negative

GM

gate voltage
Maximum gate voltage required 3 TJ = - 40°C

V

GT

10

to trigger 2 TJ = 25°C Anode Supply = 6V resistive load

1T

I

Maximum gate current 90 TJ = - 40°C

GD

required to trigger 60 mA T

35 T

V

Maximum gate voltage

GD

that will not trigger
Maximum gate current

I

GD

that will not trigger

0.2 V TJ = 125°C, rated V

2mAT

W

V

= 125°C

J

= 25°C Anode Supply = 6V resistive load

J

= 125°C

J

applied

DRM

= 125°C, rated V

J

DRM

applied

P100 Series

gate open

DRM

Thermal and Mechanical Specification

Parameter P100 Units Conditions

T

Max. operating temperature range -40 to 125

J

T

Max. storage temperature range -40 to 125

stg

R

Max. thermal resistance, 2.24 K/W DC operation per junction

thJC

junction to case
Max. thermal resistance, 0.10 K/W Mounting surface, smooth and greased

R

thCS

case to heatsink

T Mounting torque, base to heatsink 4 Nm

wt Approximate weight 58 (2.0) g (oz)

°C

A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound

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3

P100 Series

Bulletin I27125 rev. A 04/99

Circuit Type and Coding *

Terminal Positions

Circuit "0" Circuit "2" Circuit "3"

Schematic diagram
diagram

G1

AC1
AC2

(-)

G2

(+) (-)

AC2

AC1

G2

G1

AC1
AC2

(+)

(-)

Single Phase Single Phase Single Phase
Hybrid Bridge Hybrid Bridge All SCR

Common Cathode Doubler Bridge

Basic series P10. P12. P13.

With voltage P10.K P12.K P13.K
suppression

With free-wheeling P10.W - ­diode

With both voltage
suppression and P10.KW - ­free-wheeling diode

* To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W

Outline Table

4.6 (0.18)

12.7 (0.50)

.6 (0.18)
4

.
X
A

(0.10) M

2.5

12.7 (0.50)

63.5 (2.50)

45 (1.77)

1.65 (0.06)

.
X
A

.
X
A

.5 (0.61)

M

25 (0. 98) M

15

Faston 6.35x0.8 (0.25x0.03)

G1

G2G3G4

(+)

.
X

5.2 (0.20)

23.2 (0.91)

A
) M

32.5 (1.28

33.8 (1. 33)

48.7 (1.91)

All dimensions in millimeters (inches)

4

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60

50

40

30

180°

(Sine)

20

10

Maximu m Total Power Loss (W )

0

0 5 10 15 20 25

P100 Series
T = 125°C

J

Total Output Current (A)

Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)

P100 Series

Bulletin I27125 rev. A 04/99

R = 1

t

hS

A

2

.

K

5

/

K

W

/W - D

3

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

0 25 50 75 1 00 125

Maximum Allowable Ambient Temperature (°C)

el

t

a R

15

180°

120°

90°
60°
30°

10

RMS Limit

5

Conduction angle

P100 Series
T = 125°C

J

Per Junction

Maximum Average On-state Power Loss (W)

0

0 5 10 15

Avera ge On - s tate Cu rr ent (A )

20

DC

180°

120°

15

90°
60°
30°

10

RMS Limit

Conduct ion Peri od

5

P100 Series
T = 125°C

Maximum Average On-state Power Loss (W)

0

0 5 10 15 20

Per Junction

Average On-state Current (A)

Fig. 2 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics

130

120

110

Fully Turned.on

180°

(Sine)

180°

(Rect)

1000

100

T = 25 °C

J

T = 125 °C

J

100

90

P100 Series
Per Module

80

Maximum Allowable Case Temperature (°C)

70

0 5 10 15 20 25 30

Total Output Current (A)

Fig. 4 - Current Ratings Characteristics

10

P100 Series

Instantaneous On-state Current (A)

1

0123456

Per Junction

Inst an ta neo u s On- s tate Vol t age (V)

Fig. 5 - On-state Voltage Drop Characteristics

J

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5

P100 Series

Bulletin I27125 rev. A 04/99

350

300

250

200

Peak Half Sine Wave On-state Current (A)

150

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

P100 Series
Per Junction

1 10 100

Initial T = 125°C

J

@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s

Fig. 6 - Maximum Non-Repetitive Surge Current

10

Steady State Value:
R = 2.24K/W

thJC

thJC

(DC Operation)

1

0.1

400

Maximum Non Repetitive Surge Current

Versus Puls e T rain D urat io n . Con t ro l

Of Conduction May Not Be Maintained.

350

300

250

200

150

P100 Series
Per Junction

Peak Hal f Sine W ave On - state Curr ent (A)

100

0.01 0.1 1
Pulse Train Duration (s)

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

J

RRM

Fig. 7 - Maximum Non-Repetitive Surge Current

P100 Series
Per Junction

0.01

Transient Thermal Impedance Z (K/W)

0.0001 0.001 0.01 0.1 1 10
Squ are Wave Pul se Dura tion (s)

Fig. 8 - Thermal Impedance Z

100

Rectangular gate pulse
a) Recommend e d load line f or

rated di/dt : 10V, 20 ohms, tr <= 1µs

b) Recommend e d load line f or

rated di/dt : 10 V, 65 ohms, tr <= 1µs

10

(a)

(b)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

1

Instantaneous Gate Vo ltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

thJC

P100 Series

Characteristics

(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

(4 )

(3) (2) (1)

Frequency Limited
By PG (A V )

Fig. 9 - Gate Characteristics

6

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P100 Series

Bulletin I27125 rev. A 04/99

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