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polyfet rf devices
P121
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
TM
low feedback and output capacitances
resulting in high F transistors with high
t
input impedance and high efficiency.
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
10
Watts V
Junction to
Case Thermal
Resistance
o
C/W
15.00
Maximum
Junction
Temperature
RF CHARACTERISTICS ( WATTS OUTPUT )1.0
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
PATENTED GOLD METALLIZED
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORVDMOS
Watts
1.0
Package Style
Single Ended
SO8
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
C
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
0.8
Drain to
Gate
Voltage
50 V
Drain to
Source
Voltage
50
Gate to
Source
Voltage
30
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
10
50
dB
%
20:1 Relative
0.20
Idq = A, Vds = V, F =
Idq =
0.20
A, Vds = V, F =
Idq = 0.20
A, Vds = V, F =
12.5
12.5
12.5
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
40
0.2
1
1 7
0.2
2.00
2.30
7.5
1.2
8.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
0.01Ids = A, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
12.5
0.02
V, Vgs = 0V
A, Vgs = VdsIds =
1.60
Vgs = 0V, F = 1 MHz12.5
Vgs = 0V, F = 1 MHz12.5
Vgs = 0V, F = 1 MHz12.5
MHz
850
850
MHz
850
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
REVISION 06/19/2000
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P121
POUT VS PIN GRAPH
P121 PIN VS POUT F=850 MHZ; IDQ=0.2A; VDS=12.5V
2
1.8
GAIN
1.6
1.4
1.2
1
0.8
0.6
POUT IN WATTS
0.4
POUT
0.2
0
0 0.05 0.1 0.15 0.2 0.25 0.3
2.5
2
1.5
1
0.5
Efficiency = 40%
PIN IN WATTS
F2C I DIE IV CURVE
12.5
12
11.5
11
10.5
10
9.5
9
8.5
8
GAIN IN DB
CAPACITANCE VS VOLTAGE
F2C 1 DIE CAPACITANCE
100
10
Crss
1
0 5 10 15 20 25 30
Ciss
VDS IN VOLTS
Coss
ID & GM VS VGSIV CURVE
F2C 1 DIE GM & ID vs VGS
10
Id
1
0.1
Gm
0
0 2 4 6 8 10 12 14 16
Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V
Vds in Volts
S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
0.01
0 2 4 6 8 10 12 14
Vgs in Volts
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 06/19/2000
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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