Page 1
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
D
P0903BDG
TO-252 (DPAK)
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
25
R
DS(ON)
9.5mΩ
I
D
50A
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current1 I
Avalanche Current IAR 40
Avalanche Energy L = 0.1mH EAS 250
Repetitive Avalanche Energy2 L = 0.05mH EAR 8.6
Power Dissipation
Operating Junction & Storage Temperature Range Tj, T
Lead Temperature (1/16” from case for 10 sec.) TL 275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
TC = 25 °C 50
I
T
= 100 °C
C
D
200
DM
35
TC = 25 °C 50
P
T
= 100 °C
C
D
-55 to 150
stg
30
A
mJ
W
°C
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1
Pulse width limited by maximum junction temperature.
2
Duty cycle ≤ 1％
R
θJC
R
θJA
R
θCS
ELECTRICAL CHARACTERISTICS (T
= 25 °C, Unless Otherwise Noted)
C
PARAMETER SYMBOL TEST CONDITIONS
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
(BR)DSS
GS(th)
V
GSS
DSS
V
2.5
62.5
0.6
LIMITS
MIN TYP MAX
STATIC
V
= 0V, ID = 250µA
GS
V
= VGS, ID = 250µA
DS
= 0V, VGS = ±20V ±250 nA
DS
25
1 1.6 3
VDS = 20V, VGS = 0V 25
= 20V, VGS = 0V, TC = 125 °C 250
DS
1
°C / W
UNIT
V
µA
SEP-24-2004
Page 2
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
On-State Drain Current1 I
Drain-Source On-State
Resistance
1
Forward Transconductance1 g
V
D(ON)
R
DS(ON)
V
fs
= 10V, VGS = 10V 50 A
DS
VGS = 4.5V, ID = 20A 11 16
V
= 10V, ID = 25A 7.5 9.5
GS
= 10V, ID = 25A 32 S
DS
DYNAMIC
P0903BDG
TO-252 (DPAK)
Lead-Free
mΩ
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge2 Q
Gate-Source Charge2 Q
Gate-Drain Charge2 Q
Turn-On Delay Time2 t
Rise Time2 t
Turn-Off Delay Time2 t
Fall Time2 t
1200 1800
iss
= 0V, VDS = 15V, f = 1MHz
600 1000
oss
rss
25 50
g
15
gs
gd
6 16
d(on)
r
d(off)
105 200
f
V
GS
VDS = 10V, VGS = 10V,
V
DS
I
≅ 50A, VGS = 10V, R
D
I
= 25A
D
= 15V, RL = 1Ω
GEN
= 24Ω
pF
350 500
nC
10
120 250
nS
40 90
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 50
A
Pulsed Current3 I
Forward Voltage1 V
150
SM
I
SD
= 25A, VGS = 0V 0.9 1.3 V
S
Reverse Recovery Time trr 70 nS
Peak Reverse Recovery Current I
RM(REC)
IF = IS, dlF/dt = 100A / µS
200 A
Reverse Recovery Charge Qrr 0.043
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
µC
REMARK: THE PRODUCT MARKED WITH “P0903BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2
SEP-24-2004
Page 3
NIKO-SEM
TYPICAL CHARACTERISTICS
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BDG
TO-252 (DPAK)
Lead-Free
3
SEP-24-2004
Page 4
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BDG
TO-252 (DPAK)
Lead-Free
4
SEP-24-2004
Page 5
NIKO-SEM
Dimension
A 9.35 10.4 H 0.89 2.03
B 2.2 2.4 I 6.35 6.80
C 0.45 0.6 J 5.2 5.5
D 0.89 1.5 K 0.6 1
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-252 (DPAK) MECHANICAL DATA
mm mm
Dimension
Min. Typ. Max.
P0903BDG
TO-252 (DPAK)
Lead-Free
Min. Typ. Max.
E 0.45 0.69 L 0.5 0.9
F 0.03 0.23 M 3.96 4.57 5.18
G 5.2 6.2 N
A
B
F
E
C
H
I
J
G
L
D
M
132
K
5
SEP-24-2004
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