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Prod uct Bul le tin OP999
June 1996
PIN Sili con Pho to di ode
Type OP999
Fea tures
• Narrow receiving angle
• Linear response vs. irradiance
• Fast switching time
• T-1 3/4 package style
De scrip tion
The OP999 photodiode consists of a PIN
silicon photodiode mounted in a dark
blue plastic injection molded shell
package. The narrow receiving angle
provides excellent on-axis coupling. The
sensors are 100% production tested for
close correlation with Optek GaAlAs
emitters.
Optek’s packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
chip placement, and consistency of the
outside package dimensions.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Re verse Break down Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Sol der ing Tem pera ture (1/16 inch [1.6 mm] from case for 5 sec. with
sol der ing iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/o C above 25o C.
(3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of
890 nm and E
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in
the area of the leads.
of 0.25 mW/cm2.
e(APT)
(1)
(2)
Typi cal Per form ance Curves
Relative Response vs.
Wavelength
Coupling Characteristics
OP999 and OP299
VR = 5 V
IF = 20 mA
λ - Wave length - nm
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
3-66
Dis tance Be tween Lens Tips - inches
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Type OP999
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS
V
I
I
(BR)
V
C
tr, t
Reverse Light Current 6.5 15 µA VR = 5 V, Ee = 0.25 mW/cm
L
Reverse Dark Current 1 60 nA VR = 30 V, Ee = 0
D
Reverse Breakdown Voltage 60 V IR = 100 µA
Forward Voltage 1.2 V IF = 1 mA
F
Total Capacitance 4 pF VR = 20 V, Ee = 0, f = 1.0 MHz
T
Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω
f
Typi cal Per form ance Curves
Normalized Light Current vs
Reverse Voltage
TA = 25o C
λ = 935 nm
Normalized to VR = 5 V
Total Capacitance vs
Reverse Voltage
TA = 25o C
Ee = 0 mW/cm
f = 1 MHz
2
Normalized Light and Dark
Current vs Ambient Temperature
VR = 5 V
λ = 890 nm
Normalized to
TA = 25o C
2(3)
Light Current
Dark Current
VR - Reverse Voltage - V VR - Reverse Voltage - V
Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular
TA - Ambient Temperature - oC
Displacement
Test
Conditions:
VR = 5 V
TA = 25o C
λ = 890 nm
Ee - Irradiance - mW/cm
2
λ = 935 nm
VR = 5 V
θ - Angular Displacement - Deg.
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
3-67
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