Low supply current: 4 μA/amplifier maximum
Single-supply operation: 2.7 V to 12 V
Wide input voltage range
Rail-to-rail output swing
Low offset voltage: 1.5 mV
No phase reversal
The OP281 and OP481 are dual and quad ultralow power
single-supply amplifiers featuring rail-to-rail outputs. Each
operates from supplies as low as 2.0 V and is specified at +3 V
and +5 V single supplies as well as ±5 V dual supplies.
Fabricated on Analog Devices’ CBCMOS process, the
OP281/OP481 feature a precision bipolar input and an output
that swings to within millivolts of the supplies, continuing to
sink or source current up to a voltage equal to the supply voltage.
Applications for these amplifiers include safety monitoring,
portable equipment, battery and power supply control, and
signal conditioning and interfacing for transducers in very low
power systems.
The output’s ability to swing rail-to-rail and not increase supply
current when the output is driven to a supply voltage enables
the OP281/OP481 to be used as comparators in very low power
systems. This is enhanced by their fast saturation recovery time.
Propagation delays are 250 μs.
The OP281/OP481 are specified over the extended industrial
temperature range (−40°C to +85°C). The OP281 dual amplifier
is available in 8-lead SOIC surface-mount and TSSOP packages.
The OP481 quad amplifier is available in narrow 14-lead SOIC
and TSSOP packages.
Operational Amplifiers
OP281/OP481
PIN CONFIGURATIONS
14
13
12
11
8
7
6
5
14
13
12
11
10
9
8
V+
OUT B
–IN B
+IN B
8
7
6
5
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
V+
OUT B
–IN B
+IN B
00291-001
00291-002
00291-003
00291-004
OUT A
1
V–
OP281
2
TOP VIEW
3
(Not to Scale)
4
–IN A
+IN A
Figure 1. 8-Lead
Narrow-Body SOIC
(R Suffix)
1
OUT A
OP281
2
–IN A
+IN A
V–
TOP VIEW
3
(Not to Scale)
4
Figure 2. 8-Lead TSSOP
(RU Suffix)
1
OUT A
2
–IN A
3
+IN A
+IN B
–IN B
OUT B
OP481
4
V+
TOP VIEW
(Not to Scale)
510
69
78
Figure 3. 14-Lead
Narrow-Body SOIC
(R Suffix)
1
OUT A
2
–IN A
3
+IN A
V+
+IN B
–IN B
OUT B
OP481
TOP VIEW
4
(Not to Scale)
5
6
7
Figure 4. 14-Lead TSSOP
(RU Suffix)
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
−40°C ≤ TA ≤ +85°C 2.5 mV
Input Bias Current IB −40°C ≤ TA ≤ +85°C 3 10 nA
Input Offset Current IOS −40°C ≤ TA ≤ +85°C 0.1 7 nA
Input Voltage Range 0 2 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.0 V, −40°C ≤ TA ≤ +85°C 65 95 dB
Large-Signal Voltage Gain A
−40°C ≤ TA ≤ +85°C 2 V/mV
Offset Voltage Drift ΔVOS/∆T −40°C to +85°C 10 μV/°C
Bias Current Drift ΔIB/ΔT 20 pA/°C
Offset Current Drift ΔIOS/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND, −40°C ≤ TA ≤ +85°C 2.925 2.96 V
Output Voltage Low VOL RL = 100 kΩ to V+, −40°C ≤ TA ≤ +85°C 25 75 mV
Short-Circuit Limit ISC ±1.1 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V, −40°C ≤ TA ≤ +85°C 76 95 dB
Supply Current/Amplifier ISY VO = 0 V 3 4 μA
−40°C ≤ TA ≤ +85°C 5 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ, CL = 50 pF 25 V/ms
Turn-On Time AV = 1, VO = 1 V 40 μs
A
Saturation Recovery Time 65 μs
Gain Bandwidth Product GBP 95 kHz
Phase Margin φM 70 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density en f = 1 kHz 75 nV/√Hz
Current Noise Density in <1 pA/√Hz
1
VOS is tested under a no load condition.
1
V
1.5 mV
OS
R
VO
= 1 MΩ, VO = 0.3 V to 2.7 V 5 13 V/mV
L
= 20, VO = 1 V 50 μs
V
Rev. D | Page 3 of 20
Page 4
OP281/OP481
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
−40°C ≤ TA ≤ +85°C 2.5 mV
Input Bias Current IB −40°C ≤ TA ≤ +85°C 3 10 nA
Input Offset Current IOS −40°C ≤ TA ≤ +85°C 0.1 7 nA
Input Voltage Range 0 4 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.0 V, −40°C ≤ TA ≤ +85°C 65 90 dB
Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = 0.5 V to 4.5 V 5 15 V/mV
−40°C ≤ TA ≤ +85°C 2 V/mV
Offset Voltage Drift ΔVOS/ΔT −40°C to +85°C 10 μV/°C
Bias Current Drift ΔIB/ΔT 20 pA/°C
Offset Current Drift ΔIOS/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND, −40°C ≤ TA ≤ +85°C 4.925 4.96 V
Output Voltage Low VOL RL = 100 kΩ to V+, −40°C ≤ TA ≤ +85°C 25 75 mV
Short-Circuit Limit ISC ±3.5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V, −40°C ≤ TA ≤ +85°C 76 95 dB
Supply Current/Amplifier ISY VO = 0 V 3.2 4 μA
−40°C ≤ TA ≤ +85°C 5 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ, CL = 50 pF 27 V/ms
Saturation Recovery Time 120 μs
Gain Bandwidth Product GBP 100 kHz
Phase Margin φM 74 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density en f = 1 kHz 75 nV/√Hz
Current Noise Density in <1 pA/√Hz
1
VOS is tested under a no load condition.
1
V
0.1 1.5 mV
OS
Rev. D | Page 4 of 20
Page 5
OP281/OP481
VS = ±5.0 V, TA = +25°C, unless otherwise noted.
Table 3.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
–40°C ≤ TA ≤ +85°C 2.5 mV
Input Bias Current IB –40°C ≤ TA ≤ +85°C 3 10 nA
Input Offset Current IOS –40°C ≤ TA ≤ +85°C 0.1 7 nA
Input Voltage Range –5 +4 V
Common-Mode Rejection CMRR VCM = –5.0 V to +4.0 V, –40°C ≤ TA ≤ +85°C 65 95 dB
Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = ±4.0 V, 5 13 V/mV
–40°C ≤ TA ≤ +85°C 2 V/mV
Offset Voltage Drift ΔVOS/ΔT –40°C to +85°C 10 μV/°C
Bias Current Drift ΔIB/ΔT 20 pA/°C
Offset Current Drift ΔIOS/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing VO RL = 100 kΩ to GND, –40°C ≤ TA ≤ +85°C ±4.925 ±4.98 V
Short-Circuit Limit ISC 12 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6 V, –40°C ≤ TA ≤ +85°C 76 95 dB
Supply Current/Amplifier ISY VO = 0 V 3.3 5 μA
–40°C ≤ TA ≤ +85°C 6 μA
Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density en f = 1 kHz 85 nV/√Hz
f = 10 kHz 75 nV/√Hz
Current Noise Density in <1 pA/√Hz
1
VOS is tested under a no load condition.
1
V
0.1 1.5 mV
OS
Rev. D | Page 5 of 20
Page 6
OP281/OP481
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 16 V
Input Voltage GND to VS + 10 V
Differential Input Voltage ±3.5 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
θJA is specified for the worst-case conditions, that is, θJA is specified for device
soldered in circuit board for TSSOP and SOIC packages.
1
θ
JA
JC
Unit
ESD CAUTION
Rev. D | Page 6 of 20
Page 7
OP281/OP481
TYPICAL PERFORMANCE CHARACTERISTICS
45
VS = 2.7V
T
= 25°C
A
40
35
30
25
20
15
QUANTITY (Amplifiers)
10
5
0
INPUT OFFSET VOLTAGE (mV)
0.60.40.20
1.00.8–0.6 –0.4 –0.2–1.0 –0.8
00291-005
Figure 5. Input Offset Voltage Distribution
0
VS = 5V
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
INPUT BIAS CURRENT (nA)
–4.0
–4.5
–5.0
TEMPERATURE (° C)
1008060
12002040–40–20
0291-008
Figure 8. Input Bias Current vs. Temperature
50
VS = 5V
T
= 25°C
A
45
40
35
30
25
20
15
QUANTITY (Amplifiers)
10
5
0
INPUT OFFSET VOLTAGE (mV)
0.60.40.20
1.00.8–0.6 –0.4 –0.2–1.0 –0.8
00291-006
Figure 6. Input Offset Voltage Distribution
2000
VS = 5V
1800
1600
1400
1200
1000
800
600
INPUT OFFSET VOLTAGE (µV)
400
200
0
TEMPERATURE (° C)
1008060
12002040–40–20
0291-007
Figure 7. Input Offset Voltage vs. Temperature
1.0
VS = 5V
T
= 25°C
A
0.5
0
–0.5
–1.0
–1.5
–2.0
INPUT BIAS CURRENT (nA)
–2.5
–3.0
–3.5
00.51.0 1.5 2.0 2.5 3.03.5 4.0 4.5 5.0
COMMON-MODE VOLTAGE (V)
Figure 9. Input Bias Current vs. Common-Mode Voltage
0.5
VS = 5V
0.4
0.3
0.2
0.1
0
–0.1
–0.2
INPUT OFFSET CURRENT ( nA)
–0.3
–0.4
TEMPERATURE ( °C)
Figure 10. Input Offset Current vs. Temperature
00291-009
1008060
12002040–40–20
0291-010
Rev. D | Page 7 of 20
Page 8
OP281/OP481
10000
VS = 3V
T
= 25°C
A
1000
100
SOURCE
10
OUTPUT VOLTAGE (mV)
1
0.1
SINK
LOAD CURRENT ( µA)
Figure 11. Output Voltage to Supply Rail vs. Load Current
1000100101
00291-011
70
60
50
40
30
20
10
0
OPEN-LOOP GAIN (dB)
–10
–20
–30
1k10k100k
FREQUENCY (H z)
Figure 14. Open-Loop Gain and Phase vs. Frequency
VS = 5V
T
= 25°C
A
R
= 100kΩ
L
0
45
90
135
180
225
PHASE SHIF T (Degrees)
270
1M100
00291-014
1000
VS = 5V
T
= 25°C
A
100
SOURCE
10
OUTPUT VO LTAGE (mV)
1
0.1
LOAD CURRENT ( µA)
SINK
Figure 12. Output Voltage to Supply Rail vs. Load Current
1000
VS = ±5V
T
= 25°C
A
100
SOURCE
10
OUTPUT VOLTAGE (mV)
1
0.1
LOAD CURRENT ( µA)
SINK
Figure 13. Output Voltage to Supply Rail vs. Load Current
70
60
50
40
30
20
10
0
OPEN-LOOP GAIN (dB)
–10
–20
1000100101
00291-012
–30
1k10k100k
FREQUENCY (H z)
VS = 3V
T
= 25°C
A
R
= 100kΩ
L
0
45
90
135
180
225
PHASE SHIFT (Degrees)
270
1M100
0291-015
Figure 15. Open-Loop Gain and Phase vs. Frequency
70
60
50
40
30
20
10
0
OPEN-LOOP GAIN (dB)
–10
–20
1000100101
00291-013
–30
1k10k100k
FREQUENCY (H z)
VS = 2.7V
T
= 25°C
A
R
= 100kΩ
L
0
45
90
135
180
225
PHASE SHIFT (Degrees)
270
1M100
00291-016
Figure 16. Open-Loop Gain and Phase vs. Frequency
Rev. D | Page 8 of 20
Page 9
OP281/OP481
70
60
50
40
30
20
10
0
OPEN-LOOP GAIN (dB)
–10
–20
–30
1k10k100k
FREQUENCY (H z)
VS = ±5V
T
A
R
L
Figure 17. Open-Loop Gain and Phase vs. Frequency
= 25°C
= 100kΩ TO GROUND
0
45
90
135
180
225
PHASE SHIFT (Degrees)
270
1M100
00291-017
90
VS = ±5V
80
70
VS = +5V
60
50
40
CMRR (dB)
30
20
10
0
–10
VS = +3V
10k100k1M
FREQUENCY (H z)
TA = 25°C
10M1k
00291-020
Figure 20. CMRR vs. Frequency
60
50
40
30
20
10
0
–10
CLOSED-LOOP GAIN (dB)
–20
–30
–40
FREQUENCY (H z)
Figure 18. Closed-Loop Gain vs. Frequency
(50nV/√Hz/DIV)
FREQUENCY (kHz)
Figure 19. Voltage Noise Density vs. Frequency
VS = 5V
T
= 25°C
A
R
= ∞
L
VS = 5V
T
= 25°C
A
MARKER @ 67nV/√Hz
160
140
120
100
80
60
PSRR (dB)
40
20
0
–20
1M101001k10k100k
00291-018
–40
FREQUENCY (H z)
VS = ±5V, +5V, +3V, +2.7V
T
= 25°C
A
R
= ∞
L
1M101001k10k100k
00291-021
Figure 21. PSRR vs. Frequency
50
VS = +5V
V
= ±50mV
45
IN
R
= 100kΩ
L
T
= 25°C
A
40
35
30
25
20
15
10
SMALL SIGNAL OVERSHOOT (%)
5
1086420
00291-019
0
101000
LOAD CAPACITANCE ( pF)
100
–OS
+OS
00291-022
Figure 22. Small-Signal Overshoot vs. Load Capacitance
Rev. D | Page 9 of 20
Page 10
OP281/OP481
5
4
3
2
1
MAXIMUM OUTPUT SWING (V p-p)
0
10100k
1001k10k
FREQUENCY (Hz)
VS = 5V
V
= 4V p-p
IN
T
= 25°C
A
R
= ∞
L
Figure 23. Maximum Output Swing vs. Frequency
00291-023
4.5
VS = 5V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
SUPPLY CURRENT/AMPLIFIER (µA)
0.5
0
204060801201000–20–40
TEMPERATURE ( °C)
Figure 26. Supply Current/Amplifier vs. Temperature
00291-026
3
2
1
MAXIMUM OUTPUT SWING (V p-p)
0
10100k
1001k10k
FREQUENCY (Hz)
VS = 3V
V
T
R
Figure 24. Maximum Output Swing vs. Frequency
4.0
VS = 3V
3.5
3.0
2.5
2.0
= 2V p-p
IN
= 25°C
A
= ∞
L
3.50
TA = 25°C
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
SUPPLY CURRENT/AMPLIFIER (µA)
0.50
0.25
0
0.501.02.03.04.05.06.01.52.53. 54.55. 5
00291-024
SUPPLY VOLTAGE (±V)
0291-027
Figure 27. Supply Current/Amplifier vs. Supply Voltage
VS = ±2.5V
= 1
A
V
= 100kΩ
R
L
= 50pF
C
L
= 25°C
T
A
100
A2
90
0mV
1.5
1.0
SUPPLY CURRENT/AMPLIFIER (µA)
0.5
0
204060801201000–20–40
TEMPERATURE ( °C)
Figure 25. Supply Current/Amplifier vs. Temperature
00291-025
Rev. D | Page 10 of 20
10
0%
50mV
100µs
00291-028
Figure 28. Small-Signal Transient Response
Page 11
OP281/OP481
100
100
A2
90
10
0%
0mV
50mV
Figure 29. Small-Signal Transient Response
A2
90
2.5V
100µs
VS = ±1.35V
= 1
A
V
R
= 100kΩ
L
= 50pF
C
L
T
= 25°C
A
VS = 5V
= 1
A
V
= 100kΩ
R
L
= 50pF
C
L
= 25°C
T
A
100µs
VS = 2.75V
= 1
A
V
R
= 100kΩ
L
= 50pF
C
L
T
= 25°C
A
00291-031
A2
100
90
10
0%
0.5V
500mV
00291-029
Figure 31. Large-Signal Transient Response
VS = 5V
= 25°C
T
A
100
A2
90
2.5V
10
0%
1V
Figure 30. Large-Signal Transient Response
100µs
10
0%
1V1V
00291-030
200µs
00291-032
Figure 32. No Phase Reversal
Rev. D | Page 11 of 20
Page 12
OP281/OP481
A2
100
90
10
0%
VS = ±1.35V
0V
500mV500mV
= ∞
R
L
Figure 33. Saturation Recovery Time
50µs
VIN = ±1V p-p
AT = 2kHz
120
105
90
75
60
45
30
15
CHANNEL SEPARATIO N (dB)
0
–15
–30
00291-033
1001M
1k10k100k
FREQUENCY (Hz)
Figure 35. Channel Separation vs. Frequency
VS = 5V
T
= 25°C
A
= ∞
R
L
00291-035
100
90
10
0%
A2
1V500mV
0V
CIRCUIT = A
100µs
VOL
VS = 2.5V
= 25°C
T
A
= ∞
R
L
00291-034
Figure 34. Saturation Recovery Time
Rev. D | Page 12 of 20
Page 13
OP281/OP481
−
V
APPLICATIONS
THEORY OF OPERATION
The OPx81 family of op amps is comprised of extremely low
powered, rail-to-rail output amplifiers, requiring less than 4 μA of
quiescent current per amplifier. Many other competitors’ devices
may be advertised as low supply current amplifiers but draw
significantly more current as the outputs of these devices are driven
to a supply rail. The supply current of the OPx81 remains under
4 μA even when the output is driven to either supply rail. Supply
currents should meet the specification as long as the inputs and
outputs remain within the range of the power supplies.
Figure 36 shows a simplified schematic of a single channel for
the OPx81. A bipolar differential pair is used in the input stage.
PNP transistors are used to allow the input stage to remain
linear with the common-mode range extending to ground. This
is an important consideration for single-supply applications.
The bipolar front end also contributes less noise than a MOS
front end with only nanoamps of bias currents. The output of
the op amp consists of a pair of CMOS transistors in a common
source configuration. This setup allows the output of the
amplifier to swing to within millivolts of either supply rail. The
headroom required by the output stage is limited by the amount
of current being driven into the load. The lower the output
current, the closer the output can go to either supply rail.
Figure 11, Figure 12, and Figure 13 show the output voltage
headroom vs. the load current. This behavior is typical of railto-rail output amplifiers.
V
CC
OUT
+IN
–IN
to the lowest possible input signal excursion and can be found
using the following formula:
VV
,
MININEE
R
=
3
105.0−×
where:
VEE is the negative power supply for the amplifier.
V
is the lowest input voltage excursion expected.
IN, MIN
For example, a single channel of the OPx81 should be used with a
single-supply voltage of +5 V if the input signal may go as low as
−1 V. Because the amplifier is powered from a single supply, V
is
EE
the ground; therefore, the necessary series resistance should be 2 kΩ.
INPUT OFFSET VOLTAGE
The OPx81 family of op amps was designed for low offset
voltages (less than 1 mV).
100kΩ
CM
100kΩ
< 0 V
+3V
OP281
V
OUT
00291-037
100kΩ
–0.27V
Figure 37. Single OPx81 Channel Configured as a Difference Amplifier
+
–
100kΩ
VIN = 1kHz AT
400mV p-p
–0.1V
Operating at V
INPUT COMMON-MODE VOLTAGE RANGE
The OPx81 is rated with an input common-mode voltage range
from V
with a common-mode voltage that is slightly less than V
Figure 37 shows a single OPx81 channel configured as a difference
amplifier with a single-supply voltage of 3 V. Negative dc voltages
are applied at both input terminals, creating a common-mode
voltage that is less than ground. A 400 mV p-p input signal is
then applied to the noninverting input. Figure 38 shows the
resulting input and output waves. Notice how the output of the
amplifier also drops slightly negative without distortion.
to 1 V less than VCC. However, the op amp can operate
EE
.
EE
V
EE
Figure 36. Simplified Schematic of a Single OPx81 Channel
00291-036
OUT
100
90
0.2ms
INPUT OVERVOLTAGE PROTECTION
The input stage to the OPx81 family of op amps consists of a
PNP differential pair. If the base voltage of either of these input
transistors drops to more than 0.6 V below the negative supply,
V
IN
the input ESD protection diodes become forward-biased, and
large currents begin to flow. In addition to possibly damaging the
device, this creates a phase reversal effect at the output. To prevent
this, the input current should be limited to less than 0.5 mA.
This can be done by simply placing a resistor in series with the
input to the device. The size of the resistor should be proportional
Rev. D | Page 13 of 20
10
0%
0.1V
Figure 38. Input and Output Signals with V
CM
< 0 V
0V
00291-038
Page 14
OP281/OP481
V
V
V
CAPACITIVE LOADING
Most low supply current amplifiers have difficulty driving
capacitive loads due to the higher currents required from the
output stage for such loads. Higher capacitance at the output
will increase the amount of overshoot and ringing in the amplifier’s
step response and may affect the stability of the device. However,
through careful design of the output stage and its high phase
margin, the OPx81 family can tolerate some degree of capacitive
loading. Figure 39 shows the step response of a single channel
with a 10 nF capacitor connected at the output. Notice that the
overshoot of the output does not exceed more than 10% with
such a load, even with a supply voltage of only 3 V.
WINDOW COMPARATOR
The extremely low power supply current demands of the OPx81
family make it ideal for use in long-life battery-powered
applications such as a monitoring system. Figure 41 shows a
circuit that uses the OP281 as a window comparator.
5.1kΩ
3
V
OUT
Q1
3V
R1
R2
IN
2kΩ
3V
3V
V
H
A1
OP281-A
3V
D1
10kΩ
5.1kΩ
100
90
10
0%
00291-039
Figure 39. Ringing and Overshoot of the Output of the Amplifier
MICROPOWER REFERENCE VOLTAGE GENERATOR
Many single-supply circuits are configured with the circuit biased
to half of the supply voltage. In these cases, a false ground reference
can be created by using a voltage divider buffered by an amplifier.
Figure 40 shows the schematic for such a circuit.
The two 1 MΩ resistors generate the reference voltage while
drawing only 1.5 μA of current from a 3 V supply. A capacitor
connected from the inverting terminal to the output of the op amp
provides compensation to allow a bypass capacitor to be
connected at the reference output. This bypass capacitor helps
to establish an ac ground for the reference output. The entire
reference generator draws less than 5 μA from a 3 V supply source.
3V TO 12
10kΩ
0.022µF
R3
V
L
R4
A2
OP281-B
D2
00291-041
Figure 41. Using the OP281 as a Window Comparator
The threshold limits for the window are set by VH and VL,
provided that V
> VL. The output of the first OP281 (A1) will
H
stay at the negative rail, in this case ground, as long as the input
voltage is less than V
. Similarly, the output of the second
H
OP281 (A2) will stay at ground as long the input voltage is
higher than V
. As long as VIN remains between VL and VH, the
L
outputs of both op amps will be 0 V. With no current flowing in
either D1 or D2, the base of Q1 will stay at ground, putting the
transistor in cutoff and forcing V
If the input voltage rises above V
to the positive supply rail.
OUT
, the output of A2 stays at
H
ground, but the output of A1 goes to the positive rail and D1
conducts current. This creates a base voltage that turns on Q1
and drives V
below V
current. Therefore, V
V
and VH, but low if the input voltage moves outside of that range.
L
low. The same condition occurs if VIN falls
OUT
with A2’s output going high and D2 conducting
L
is high if the input voltage is between
OUT
The R1 and R2 voltage divider sets the upper window voltage,
and the R3 and R4 voltage divider sets the lower voltage for the
window. For the window comparator to function properly, V
must be a greater voltage than V
V
V
R2
=
H
=
L
R4
R2R1
+
R4R3
+
.
L
H
The 2 kΩ resistor connects the input voltage of the input
terminals to the op amps. This protects the OP281 from
possible excess current flowing into the input stages of the
devices. D1 and D2 are small-signal switching diodes (1N4446
or equivalent), and Q1 is a 2N2222 or an equivalent NPN
transistor.
1MΩ
1MΩ
1µF
2
3
8
OP281
4
100Ω
1
1µF
V
REF
1.5V TO 6V
00291-040
Figure 40. Single Channel Configured as a Micropower Bias Voltage Generator
Rev. D | Page 14 of 20
Page 15
OP281/OP481
V
V
V
LOW-SIDE CURRENT MONITOR
In the design of power-supply control circuits, a great deal of
design effort is focused on ensuring the long-term reliability of
a pass transistor over a wide range of load current conditions.
As a result, monitoring and limiting device power dissipation is
of primary importance in these designs. Figure 42 shows an
example of a 5 V, single-supply current monitor that can be
incorporated into the design of a voltage regulator with foldback current limiting or a high current power supply with
crowbar protection. The design capitalizes on the OPx81’s
common-mode range extending to ground. Current is
monitored in the power-supply return path, where a 0.1 Ω
shunt resistor, R
, creates a very small voltage drop. The
SENSE
voltage at the inverting terminal becomes equal to the voltage at
the noninverting terminal through the feedback of Q1, which is
a 2N2222 or an equivalent NPN transistor. This makes the
voltage drop across R1 equal to the voltage drop across R
SENSE
.
Therefore, the current through Q1 becomes directly
proportional to the current through R
, and the output
SENSE
voltage is given by the following equation:
R
OUT
⎜
⎝
SENSECC
R
1
2
⎛
VV
The voltage drop across R2 increases as I
decreases if a higher supply current is sensed. For the
V
OUT
element values shown, the V
−2.5 V/A, decreasing from V
OUT
Q1
Figure 42. Low-Side Load Current Monitor
CC
R
R2
2.49kΩ
R1
100Ω
0.1Ω
SENSE
OUT
CC
⎞
××−=
IR
⎟
L
⎠
increases; therefore,
L
transfer characteristic is
.
V
CC
SINGLE
CHANNEL
OPx81
RETURN TO
GROUND
00291-042
LOW VOLTAGE HALF-WAVE AND FULL-WAVE
RECTIFIERS
Because of its quick overdrive recovery time, an OP281 can be
configured as a full-wave rectifier for low frequency (<500 Hz)
applications. Figure 43 shows the schematic.
= 2V p-p
IN
R1
100kΩ
3V
2kΩ
A1
OP281-A
R2
100kΩ
3V
A2
OP281-B
FULL-WAVE
RECTIF IED
OUTPUT
HALF-W AVE
RECTIF IED
OUTPUT
00291-043
Figure 43. Single-Supply Full-Wave and Half-Wave Rectifiers Using an OP281
100
90
10
0%
SCALE
0.1V/DIV
SCALE
0.1ms/DIV
00291-044
Figure 44. Full-Wave Rectified Signal
Amplifier A1 is used as a voltage follower that tracks the input
voltage only when it is greater than 0 V. This provides a halfwave rectification of the input signal to the noninverting
terminal of Amplifier A2. When A1’s output is following the
input, the inverting terminal of A2 also follows the input from
the virtual ground between the inverting and noninverting
terminals of A2. With no potential difference across R1, no
current flows through either R1 or R2; therefore, the output of
A2 also follows the input. When the input voltage goes below
0 V, the noninverting terminal of A2 becomes 0 V. This makes
A2 work as an inverting amplifier with a gain of 1 and provides
a full-wave rectified version of the input signal. A 2 kΩ resistor
in series with A1’s noninverting input protects the device when
the input signal becomes less than ground.
BATTERY-POWERED TELEPHONE HEADSET
AMPLIFIER
Figure 45 shows how the OP281 can be used as a two-way
amplifier in a telephone headset. One side of the OP281 can be
used as an amplifier for the microphone, and the other side can
be used to drive the speaker. A typical telephone headset uses a
600 Ω speaker and an electret microphone that requires a
supply voltage and a biasing resistor.
Rev. D | Page 15 of 20
Page 16
OP281/OP481
3V
2.2kΩ
INPUT
3V
1MΩ1MΩ
ELECTRET
MIC
1µF
1µF
10kΩ
POT.
1µF
0.1µF
11kΩ300kΩ
3V
1MΩ
1µF
1MΩ
50kΩ10kΩ
3V
OP281-B
3V
OP281-A
20kΩ
20kΩ
1µF
3V
Q1
Q2
MIC OUT
1µF
600Ω
SPEAKER
00291-045
Figure 45. Two-Way Amplifier in a Battery-Powered Telephone Headset
The OP281-A op amp provides about 29 dB of gain for audio
signals coming from the microphone. The gain is set by the
300 kΩ and 11 kΩ resistors. The gain bandwidth product of the
amplifier is 95 kHz, which yields a −3 dB rolloff at 3.4 kHz for
the set gain of 28. This is acceptable because telephone audio is
band limited for 300 kHz to 3 kHz signals. If higher gain is
required for the microphone, an additional gain stage should be
used, because adding more gain to the OP281 would limit the
audio bandwidth. A 2.2 kΩ resistor is used to bias the electret
microphone. This resistor value may vary depending on the
specifications of the microphone. The output of the microphone is
ac-coupled to the noninverting terminal of the op amp. Two 1 MΩ
resistors are used to provide the dc offset for single-supply use.
The OP281-B amplifier (see Figure 45) can provide up to 15 dB of
gain for the headset speaker. Incoming audio signals are ac-coupled
to a 10 kΩ potentiometer that is used to adjust the volume. Again,
two 1 MΩ resistors provide the dc offset with a 1 μF capacitor
establishing an ac ground for the volume-control potentiometer.
Because the OP281 is a rail-to-rail output amplifier, it would have
difficulty driving a 600 Ω speaker directly. Here, a Class AB buffer
is used to isolate the load from the amplifier and to provide the
necessary current to drive the speaker. By placing the buffer in
the feedback loop of the op amp, crossover distortion can be
minimized. Q1 and Q2 should have minimum betas of 100. The
600 Ω speaker is ac-coupled to the emitters to prevent quiescent
current from flowing into the speaker. The 1 μF coupling capacitor
makes an equivalent high-pass filter cutoff at 265 Hz with a 600 Ω
load attached. Again, this does not pose a problem because it is
outside the frequency range for telephone audio signals.
The circuit in Figure 45 draws around 250 μA of current. The
Class AB buffer has a quiescent current of 140 μA, and roughly
100 μA is drawn by the microphone itself. A CR2032 3 V
lithium battery has a life expectancy of 160 mA hours, which
means this circuit can run continuously for 640 hours on a
single battery.
Rev. D | Page 16 of 20
Page 17
OP281/OP481
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLL ING DIMENSI ONS ARE IN MILLIMETERS; INCH DI MENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DESIGN.
4.00 (0.1575)
3.80 (0.1496)
0.25 (0.0098)
0.10 (0.0039)
COPLANARIT Y
0.10
4.00 (0.1574)
3.80 (0.1497)
SEATING
PLANE
85
1
1.27 (0.0500)
COMPLIANT TO JEDEC STANDARDS MS-012-A A
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
Figure 46. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
8.75 (0.3445)
8.55 (0.3366)
BSC
8
6.20 (0.2441)
5.80 (0.2283)
7
1.75 (0.0689)
1.35 (0.0531)
SEATING
PLANE
8°
0°
0.25 (0.0098)
0.17 (0.0067)
14
1
1.27 (0.0500)
0.51 (0.0201)
0.31 (0.0122)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
0.50 (0.0197)
0.25 (0.0098)
1.27 (0.0500)
0.40 (0.0157)
45°
45°
012407-A
CONTROLL ING DIMENSIONS ARE IN MILLIMETERS; INCH DI MENSIONS
(IN PARENTHESES) ARE ROUNDED-O FF MIL LIMETE R EQUIVALENTS FOR
REFERENCE ON LY AND ARE NOT APPROPRI ATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AB
Figure 47. 14-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-14)
Dimensions shown in millimeters and (inches)
060606-A
Rev. D | Page 17 of 20
Page 18
OP281/OP481
Y
0.15
0.05
COPLANARIT
0.10
3.10
3.00
2.90
8
5
4.50
6.40 BSC
4.40
4.30
41
PIN 1
0.65 BSC
1.20
MAX
0.30
SEATING
0.19
PLANE
COMPLIANT TO JEDEC STANDARDS MO-153-AA
0.20
0.09
8°
0°
0.75
0.60
0.45
Figure 48. 8-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-8)
Dimensions shown in millimeters
5.10
5.00
4.90
1.05
1.00
0.80
4.50
4.40
4.30
PIN 1
14
0.65
BSC
0.15
0.05
COMPLIANT TO JEDEC STANDARDS MO-153-AB-1
0.30
0.19
8
6.40
BSC
71
1.20
MAX
SEATING
PLANE
0.20
0.09
COPLANARITY
0.10
8°
0°
0.75
0.60
0.45
Figure 49. 14-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-14)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option
OP281GRU-REEL –40°C to +85°C 8-Lead TSSOP RU-8
OP281GRUZ-REEL
OP281GS –40°C to +85°C 8-Lead SOIC_N R-8
OP281GS-REEL –40°C to +85°C 8-Lead SOIC_N R-8
OP281GS-REEL7 –40°C to +85°C 8-Lead SOIC_N R-8
OP281GSZ1 –40°C to +85°C 8-Lead SOIC_N R-8
OP281GSZ-REEL1 –40°C to +85°C 8-Lead SOIC_N R-8
OP281GSZ-REEL71 –40°C to +85°C 8-Lead SOIC_N R-8
OP481GRU-REEL –40°C to +85°C 14-Lead TSSOP RU-14
OP481GRUZ-REEL1 –40°C to +85°C 14-Lead TSSOP RU-14
OP481GS –40°C to +85°C 14-Lead SOIC_N R-14
OP481GS-REEL –40°C to +85°C 14-Lead SOIC_N R-14
OP481GS-REEL7 –40°C to +85°C 14-Lead SOIC_N R-14
OP481GSZ1 –40°C to +85°C 14-Lead SOIC_N R-14
OP481GSZ-REEL1 –40°C to +85°C 14-Lead SOIC_N R-14
OP481GSZ-REEL71 –40°C to +85°C 14-Lead SOIC_N R-14