Datasheet OP481, OP281, OP181 Datasheet (Analog Devices)

Page 1
Ultralow Power, Rail-to-Rail Output
NC = NO CONNECT
8 7 6 5
1 2 3 4
NULL
V+
NULL
NC
OUT A
–IN A +IN A
V–
OP181
NC = NO CONNECT
NULL
V+
NULL
NC
OUT A
–IN A +IN A
V–
1
4
5
8
OP181
8 7 6 5
1 2 3 4
OP281
OUT A
V+
+IN B
–IN B
OUT B
–IN A +IN A
V–
OUT A
V+ OUT B–IN A
+IN A
V–
+IN B
–IN B
1
4
5
8
OP281
14 13 12 11 10
9 8
1 2 3 4
7
6
5
OUT A
V–
+IN D
–IN D
OUT D –IN A +IN A
V+
OUT C
–IN C
+IN C
+IN B –IN B
OUT B
OP481
1
7
8
14
OP481
a
FEATURES Low Supply Current: 4 mA/Amplifier max Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Offset Voltage: 1.5 mV No Phase Reversal
APPLICATIONS Comparator Battery Powered Instrumentation Safety Monitoring Remote Sensors Low Voltage Strain Gage Amplifiers
GENERAL DESCRIPTION
The OP181, OP281 and OP481 are single, dual and quad ultralow power, single-supply amplifiers featuring rail-to-rail outputs. All operate from supplies as low as 2.0 V and are specified at +3 V and +5 V single supply as well as ±5 V dual supplies.
Fabricated on Analog Devices’ CBCMOS process, the OP181 family features a precision bipolar input and an output that swings to within millivolts of the supplies and continues to sink or source current all the way to the supplies.
Applications for these amplifiers include safety monitoring, portable equipment, battery and power supply control, and signal conditioning and interface for transducers in very low power systems.
The output’s ability to swing rail-to-rail and not increase supply current, when the output is driven to a supply voltage, enables the OP181 family to be used as comparators in very low power systems. This is enhanced by their fast saturation recovery time. Propagation delays are 250 µs.
The OP181/OP281/OP481 are specified over the extended industrial (–40°C to +85°C) temperature range. The OP181, single, and OP281, dual, amplifiers are available in 8-pin plastic DIPs and SO surface mount packages. The OP281 is also available in 8-lead TSSOP. The OP481 quad is available in 14­pin DIPs, narrow 14-pin SO and TSSOP packages.
Operational Amplifiers
OP181/OP281/OP481
PIN CONFIGURATIONS
8-Lead SO 8-Lead Epoxy DIP
(S Suffix) (P Suffix)
8-Lead SO 8-Lead Epoxy DIP
(S Suffix) (P Suffix)
8-Lead TSSOP
(RU Suffix)
1
8
OP281
4
5
14-Lead Epoxy DIP 14-Lead
(P Suffix) Narrow-Body SO
14-Lead TSSOP
NOTE: PIN ORIENTATION IS EQUIVALENT FOR EACH PACKAGE VARIATION
(S Suffix)
(RU Suffix)
1
14
OP481
78
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Page 2
OP181/OP281/OP481–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
(@ VS = +3.0 V, VCM = 1.5 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I Input Offset Current I
OS
B OS
Note 1 1.5 mV –40°C T
+85°C 2.5 mV
A
–40°C TA +85°C310nA –40°C TA +85°C 0.1 7 nA
Input Voltage Range 0 2 V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A Offset Voltage Drift V
Bias Current Drift I
VO
/T10µV/°C
OS
/T 20 pA/°C
B
= 0 V to 2.0 V,
CM
–40°C T R
= 1 M, V
L
–40°C T
+85°C6595 dB
A
= 0.3 V to 2.7 V 5 13 V/mV
O
+85°C 2 V/mV
A
Offset Current Drift IOS/T 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Short Circuit Limit I
OH
OL
SC
R
= 100 k to GND,
L
–40°C T R
= 100 k to V+,
L
–40°C T
+85°C 2.925 2.96 V
A
+85°C2575mV
A
±1.1 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 12 V
S
–40°C T V
= 0 V 3 4 µA
O
+85°C7695 dB
A
–40°C TA +85°C5µA
DYNAMIC PERFORMANCE
Slew Rate SR R Turn On Time A Turn On Time A
= 100 k, C
L
= 1, V
V
= 20, V
V
= 1 40 µs
O
O
= 50 pF 25 V/ms
L
= 1 50 µs
Saturation Recovery Time 65 µs Gain Bandwidth Product GBP 95 kHz Phase Margin φo 70 Degrees
NOISE PERFORMANCE
Voltage Noise e Voltage Noise Density e Current Noise Density i
NOTES
1
VOS is tested under no load condition.
Specifications subject to change without notice.
p-p 0.1 Hz to 10 Hz 10 µV p-p
n n
n
f = 1 kHz 75 nV/Hz
<1 pA/Hz
–2–
REV. 0
Page 3
OP181/OP281/OP481
ELECTRICAL SPECIFICATIONS
(@ VS = +5.0 V, VCM = 2.5 V, TA = +258C unless otherwise noted1)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I Input Offset Current I
OS
B OS
Note 1 0.1 1.5 mV –40°C T
+85°C 2.5 mV
A
–40°C TA +85°C310nA –40°C TA +85°C 0.1 7 nA
Input Voltage Range 0 4 V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A Offset Voltage Drift V
Bias Current Drift I
VO
/T –40°C to +85°C10µV/°C
OS
/T20pA/°C
B
= 0 V to 4.0 V,
CM
–40°C T R
= 1 M , V
L
–40°C T
+85°C6590 dB
A
= 0.5 V to 4.5 V 5 15 V/mV
O
+85°C 2 V/mV
A
Offset Current Drift IOS/T2pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Short Circuit Limit I
OH
OL
SC
R
= 100 k to GND,
L
–40°C T R
= 100 k to V+,
L
–40°C T
+85°C 4.925 4.96 V
A
+85°C2575mV
A
±3.5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 12 V,
S
–40°C T V
= 0 V 3.2 4 µA
O
+85°C7695 dB
A
–40°C TA +85°C5µA
DYNAMIC PERFORMANCE
Slew Rate SR R
= 100 k, C
L
= 50 pF 27 V/ms
L
Saturation Recovery Time 120 µs Gain Bandwidth Product GBP 100 kHz Phase Margin φo 74 Degrees
NOISE PERFORMANCE
Voltage Noise e Voltage Noise Density e Current Noise Density i
NOTES
1
VOS is tested under a no load condition.
Specifications subject to change without notice.
p-p 0.1 Hz to 10 Hz 10 µV p-p
n n
n
f = 1 kHz 75 nV/Hz
<1 pA/Hz
REV. 0
–3–
Page 4
OP181/OP281/OP481–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
(@ VS = ±5 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I Input Offset Current I
OS
B OS
Note 1 0.1 1.5 mV –40°C T
+85°C 2.5 mV
A
–40°C TA +85°C310nA –40°C TA +85°C 0.1 7 nA
Input Voltage Range –5 +4 V Common-Mode Rejection CMRR V
Large Signal Voltage Gain A Offset Voltage Drift V
Bias Current Drift I
VO
/T –40°C to +85°C10µV/°C
OS
/T 20 pA/°C
B
= –5.0 V to +4.0 V,
CM
–40°C T R
= 1 M, VO = ±4.0 V, 5 13 V/mV
L
–40°C T
+85°C6595dB
A
+85°C 2 V/mV
A
Offset Current Drift IOS/T 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing V
Short Circuit Limit I
O
SC
R
= 100 k to GND,
L
–40°C T
+85°C ±4.925 ±4.98 V
A
12 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= ±1.35 V to ±6V,
S
–40°C T V
= 0 V 3.3 5 µA
O
+85°C7695dB
A
–40°C TA +85°C6µA
DYNAMIC PERFORMANCE
Slew Rate ±SR R
= 100 k, C
L
= 50 pF 28 V/ms
L
Gain Bandwidth Product GBP 105 kHz Phase Margin φo 75 Degrees
NOISE PERFORMANCE
Voltage Noise e Voltage Noise Density e Voltage Noise Density e Current Noise Density i
NOTES
1
VOS is tested under no load condition.
Specifications subject to change without notice.
p-p 0.1 Hz to 10 Hz 10 µV p-p
n n n
n
f = 1 kHz 85 nV/Hz f = 10 kHz 75 nV/Hz
<1 pA/Hz
–4–
REV. 0
Page 5
OP181/OP281/OP481
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . Gnd to V
+ 10 V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±3.5 V
Output Short-Circuit Duration to Gnd . . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP181/OP281/OP481G . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
Package Type uJA* u
JC
Units
8-Pin Plastic DIP (P) 103 43 °C/W 8-Pin SOIC (S) 158 43 °C/W 8-Pin TSSOP (RU) 240 43 °C/W 14-Pin Plastic DIP (P) 76 33 °C/W 14-Pin SOIC (S) 120 36 °C/W 14-Pin TSSOP (RU) 240 43 °C/W
*θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket
for P-DIP packages; θJA is specified for device soldered in circuit board for TSSOP and SOIC packages.
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
OP181GP –40°C to +85°C 8-Pin Plastic DIP N-8 OP181GS –40°C to +85°C 8-Pin SOIC SO-8 OP281GP –40°C to +85°C 8-Pin Plastic DIP N-8 OP281GS –40°C to +85°C 8-Pin SOIC SO-8 OP281GRU –40°C to +85°C 8-Pin TSSOP RU-8 OP481GP –40°C to +85°C 14-Pin Plastic DIP N-14 OP481GS –40°C to +85°C 14-Pin SOIC SO-14 OP481GRU –40°C to +85°C 14-Pin TSSOP RU-14
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP181/OP281/OP481 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precau­tions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–5–
Page 6
OP181/OP281/OP481–Typical Characteristics
45
VS = +2.7V
40
T
= +258C
A
35 30 25 20 15
QUANTITY – Amplifiers
10
5 0
–1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 0.8 1.0
INPUT OFFSET VOLTAGE – mV
Figure 1. Input Offset Voltage Distribution
0
–0.5
VS = +5V
–1.0 –1.5
–2.0 –2.5
–3.0 –3.5
INPUT BIAS CURRENT – nA
–4.0 –4.5
–5.0
–40
–20020406080
TEMPERATURE – 8C
100 120
50
VS = +5V
45
T
= +258C
A
40 35 30 25 20 15
QUANTITY – Amplifiers
10
5 0
–1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 0.8 1.0
INPUT OFFSET VOLTAGE – mV
Figure 2. Input Offset Voltage Distribution
1.0 VS = +5V
0.5 T
= +258C
A
0.0
–0.5 –1.0
–1.5
–2.0 –2.5
INPUT BIAS CURRENT – nA
–3.0 –3.5
0.0
0.5 1.0 1.5 2.0 2.5 3.0
COMMON-MODE VOLTAGE – Volts
3.5 4.0
4.5 5.0
2000 1800
VS = +5V
1600 1400 1200 1000
800 600 400
INPUT OFFSET VOLTAGE – µV
200
0
–40
–20020406080
TEMPERATURE – 8C
100 120
Figure 3. Input Offset Voltage vs. Temperature
0.5
0.4
0.3
0.2
0.1
0
–0.1 –0.2
INPUT OFFSET CURRENT – nA
–0.3 –0.4
–40
–20 0 20 40 60 80
TEMPERATURE – 8C
VS = +5V
100 120
Figure 4. Input Bias Current vs. Temperature
10,000
VS = +3V TA = +258C
1,000
100
10
1.0
OUTPUT VOLTAGE – mV
0.1 1 1000
SOURCE
SINK
10 100
LOAD CURRENT – µA
Figure 7. Output Voltage to Supply Rail vs. Load Current
Figure 5. Input Bias Current vs. Common-Mode Voltage
1,000
VS = +5V TA = +258C
100
10
1.0
OUTPUT VOLTAGE – mV
0.1 1 1000
SOURCE
SINK
10 100
LOAD CURRENT – µA
Figure 8. Output Voltage to Supply Rail vs. Load Current
Figure 6. Input Offset Current vs. Temperature
1,000
VS = ±5V TA = +258C
100
10
1.0
OUTPUT VOLTAGE – mV
0.1 1 1000
SOURCE
SINK
10 100
LOAD CURRENT – µA
Figure 9. Output Voltage to Supply Rail vs. Load Current
–6–
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Page 7
OP181/OP281/OP481
FREQUENCY – Hz
OPEN-LOOP GAIN – dB
70 60
–30
100 1k 1M
10k 100k
20
50 40 30
10
0 –10 –20
VS = +2.7V T
A
= +258C
R
L
= 100k
90
0 45
135 180 225 270
PHASE SHIFT – Degrees
FREQUENCY – Hz
VS = +5V T
A
= +258C
MARKER @ 67nV/Hz
02k4k6k8k10k
50nV/Hz/Div
70 60 50 40 30 20 10
0
OPEN-LOOP GAIN – dB
–10 –20
–30
100 1k 1M
FREQUENCY – Hz
VS = +5V T
A
R
L
10k 100k
= +258C = 100k
0 45 90 135 180 225 270
Figure 10. Open-Loop Gain and Phase vs. Frequency
70 60 50 40 30 20 10
0
OPEN-LOOP GAIN – dB
–10 –20
–30
100 1k 1M
VS = ±5V T
= +258C
A
R
= 100k TO GROUND
L
10k 100k
FREQUENCY – Hz
0 45 90 135 180 225 270
70 60 50 40 30 20 10
0
OPEN-LOOP GAIN – dB
–10
PHASE SHIFT – Degrees
–20 –30
100 1k 1M
FREQUENCY – Hz
VS = +3V T
A
R
L
10k 100k
= +258C = 100k
Figure 11. Open-Loop Gain and Phase vs. Frequency
60 50 40 30 20 10
0
–10
CLOSED-LOOP GAIN – dB
PHASE SHIFT – Degrees
–20 –30 –40
10 100 1M1k 10k 100k
FREQUENCY – Hz
VS = +5V
= +258C
T
A
= INFINITE
R
L
0 45 90 135 180 225
PHASE SHIFT – Degrees
270
Figure 12. Open-Loop Gain and Phase vs. Frequency
Figure 13. Open-Loop Gain and Phase vs. Frequency
90
VS = ±5V
80 70 60 50 40 30
CMRR – dB
20 10
–10
VS = +5V
VS = +3V
0
1k 10k 10M100k 1M
FREQUENCY – Hz
Figure 16. CMRR vs. Frequency
REV. 0
TA = +258C
Figure 14. Closed-Loop Gain vs. Frequency
160 140 120 100
80 60 40
PSRR – dB
20
0 –20 –40
10 100 1M1k 10k 100k
VS = ±5V, +5V, +3V, +2.7V T
= +258C
A
R
= INFINITE
L
FREQUENCY – Hz
Figure 17. PSRR vs. Frequency
–7–
Figure 15. Voltage Noise Density vs. Frequency
50
VS = +5V
45
V
= ±50mV
IN
R
= 100k
L
40
T
= +258C
A
35 30 25 20 15 10
SMALL SIGNAL OVERSHOOT – %
5 0
10 100 1000
CAPACITANCE – pF
–OS
+OS
Figure 18. Small Signal Overshoot vs. Load Capacitance
Page 8
OP181/OP281/OP481
TEMPERATURE – 8C
SUPPLY CURRENT/AMPLIFIER – µA
4.0
1.5
0
–40
–20 0 20 40 60 80 100 120
3.5
2.0
1.0
0.5
3.0
2.5
VS = +3V
10
0%
100
90
0mV
A2
100µs
50mV
VS = ±2.5V AV = 1 RL = 100k CL = 50pF TA = +258C
10
0%
100
90
0.50V
A2
100µs
500mV
VS = +2.7V AV = 1 RL = 100k CL = 50pF TA = +258C
5
4
VS = +5V V
= 4Vp–p
IN
3
R
= INFINITE
L
T
= +258C
A
2
1
MAXIMUM OUTPUT SWING – Vp-p
0
10 100 100k
1k 10k
FREQUENCY – Hz
Figure 19. Maximum Output Swing vs. Frequency
4.5 VS = +5V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
SUPPLY CURRENT/AMPLIFIER – µA
0.5
0
–20 0 20 40 60 80 100 120
–40
TEMPERATURE – 8C
3
2
1
MAXIMUM OUTPUT SWING – Vp-p
0
10 100 100k
FREQUENCY – Hz
VS = +3V V
= 2Vp–p
IN
R
= INFINITE
L
T
= +258C
A
1k 10k
Figure 20. Maximum Output Swing vs. Frequency
3.50 TA = +258C
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
SUPPLY CURRENT/AMPLIFIER – µA
0.25
0.00
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
SUPPLY VOLTAGE – ±Volts
4.55.0 5.5 6.0
Figure 21. Supply Current/Amplifier vs. Temperature
Figure 22. Supply Current/Amplifier vs. Temperature
A2
0mV
100
90
10
0%
50mV
Figure 25. Small Signal Transient Response
100µs
VS = ±1.35V AV = 1 RL = 100k CL = 50pF TA = +258C
Figure 23. Supply Current/Amplifier vs. Supply Voltage
100µs1V
VS = +5V AV = 1 RL = 100k CL = 50pF TA = +258C
A2
2.50V
100
90
10 0%
Figure 26. Large Signal Transient Response
–8–
Figure 24. Small Signal Transient Response
Figure 27. Large Signal Transient Response
REV. 0
Page 9
OP181/OP281/OP481
10 0%
100
90
0.00V
A2
50µs
500mV
VS = 61.35V RL =
500mV
VIN = 61Vp-p AT 2kHz
120
A2
2.50V
100
90
VS = +5V TA = +258C
90 75 60 45 30
105
10
0%
1V
1V
200µs
15
0
CHANNEL SEPARATION – dB
–15 –30
100 1k 1M10k 100k
FREQUENCY – Hz
=
V
+5V
S
=
T
+258C
A
=
R
L
Figure 28. No Phase Reversal
Figure 29. Channel Separation vs. Frequency
0.00V
500mV
VS = 62.5V CIRCUIT = A
A2
100
90
10
0%
1V
VOL
100µs
RL = TA = +258C
Figure 31. Saturation Recovery Time
Figure 30. Saturation Recovery Time
REV. 0
–9–
Page 10
OP181/OP281/OP481
6
5
7
4
1
2
3
+5V
OP181
V
OUT
20k POT.
V
EE
= –5V
APPLICATIONS
THEORY OF OPERATION
The OPx81 family of op amps is comprised of extremely low powered, rail-to-rail output amplifiers, requiring less than 4 µA of quiescent current per amplifier. Many other competitors’ devices may be advertised as low supply current amplifiers but draw significantly more current as the outputs of these devices are driven to a supply rail. The OPx81’s supply current remains under 4 µA even with the output driven to either supply rail. Supply currents should meet the specification as long as the inputs and outputs remain within the range of the power supplies.
Figure 32 shows a simplified schematic of the OP181. A bipolar differential pair is used in the input stage. PNP transistors are used to allow the input stage to remain linear with the common­mode range extending to ground. This is an important consider­ation for single supply applications. The bipolar front end also contributes less noise than a MOS front end with only nano­amps of bias currents. The output of the op amp consists of a pair of CMOS transistors in a common source configuration. This setup allows the output of the amplifier to swing to within millivolts of either supply rail. The headroom required by the output stage is limited by the amount of current being driven into the load. The lower the output current, the closer the output can go to either supply rail. Figures 7, 8 and 9 show the output voltage headroom versus load current. This behavior is typical of rail-to-rail output amplifiers.
where: VEE is the negative power supply for the amplifier, and
V
is the lowest input voltage excursion expected
IN, MIN
For example, an OP181 is to be used with a single supply volt­age of 5 V where the input signal could possibly go as low as –1.0 V. Because the amplifier is powered from a single supply, V
is ground, so the necessary series resistance should be 2 k.
EE
Input Offset Voltage Nulling
The OPx81 family of op amps was designed for low offset voltages less than 1 mV. The single OP181 does provide two offset adjust terminals, should the user require greater precision. In general, these terminals should be used only to zero amplifier offsets and should not be used to adjust system offset voltages.
A 20 k potentiometer connected to the offset adjust terminals, with the wiper connected to V
, can be used to reduce the
EE
offset voltage of the amplifier. The OP181 should be connected in the unity-gain configuration (as shown in Figure 33) or in a gain configuration. The potentiometer should be adjusted until V
is minimized. The wiper of the potentiometer must be
OUT
connected to V
; connecting it to the positive supply rail could
EE
damage the device.
V
CC
+IN
–IN
V
EE
OUT
Figure 32. Simplified Schematic of the OP181
Input Overvoltage Protection
The input stage to the OPx81 family of op amps consists of a PNP differential pair. If the base voltage of either of these input transistors drops to more than 0.6 V below the negative supply, the input ESD protection diodes will become forward biased, and large currents will begin to flow. In addition to possibly damaging the device, this will create a phase reversal effect at the output. To prevent these effects from happening, the input current should be limited to less than 0.5 mA.
This can be done quite easily by placing a resistor in series with the input to the device. The size of the resistor should be pro­portional to the lowest possible input signal excursion and can be found using the following formula:
V
EE−VIN, MIN
R =
0.5×10
3
Figure 33. Offset Voltage Nulling Circuit
Input Common-Mode Voltage Range
The OPx81 is rated with an input common-mode voltage range from V
to 1 volt under VCC. However, the op amp can still
EE
operate even with a common-mode voltage that is slightly less than V
. Figure 34 shows an OP181 configured as a difference
EE
amplifier with a single supply voltage of +3 V. Negative dc voltages are applied at both input terminals creating a common­mode voltage that is less than ground. A 400 mV p-p input signal is then applied to the noninverting input. Figure 35 shows a picture of the input and output waves. Notice how the output of the amplifier also drops slightly negative without distortion.
100k
100k
+3V
OP181
V
OUT
–0.27V
100k
100k
VIN = 1kHz AT 400mV p-p
–0.1V
Figure 34. OP181 Configured as a Difference Amplifier Operating at V
–10–
CM
< 0 V
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OP181/OP281/OP481
6
7
4
2
3
OP181
10k
0.022µF
V
REF
+1.5V TO +6V1µF
1µF
1M
+3V TO +12V
100
1M
0.2ms
100
90
V
OUT
0V
V
IN
10
0%
0.1V
100
90
10
0%
Figure 35. Input and Output Signals with VCM < 0 V
Overdrive Recovery Time
The amount of time it takes for an amplifier to recover from saturation can be an important consideration when using an amplifier as a comparator or when outputs can be driven to the supplies. The overdrive recovery time for the OP181 is 50 µs with the amplifier running from a 3 volt supply and increases to 100 µs with a 10 volt supply. Figure 36 shows the result of the OP181 running from a 3 V supply with its output being overdriven.
0.2ms
V
IN
100
SCALE 0.1V
SCALE 1V
90
0V
V
OUT
10
0%
0V
0.1V
VS = +3V AV = +100
Figure 36. Output of the Op Amp Recovering from Saturation
Capacitive Loading
Most low supply current amplifiers have difficulty driving capacitive loads due to the higher currents required from the output stage for such loads. Higher capacitance at the output will increase the amount of overshoot and ringing in the amplifier’s step response and could even affect the stability of the device. However, through careful design of the output stage and its high phase margin, the OPx81 family can tolerate some degree of capacitive loading. Figure 37 shows the step response of an OP181 with a 10 nF capacitor connected at the output. Notice that the overshoot of the output does not exceed more than 10% with such a load, even with a supply voltage of only +3 V.
Figure 37. Ringing and Overshoot of the Output of the Amplifier
A Micropower Reference Voltage Generator
Many single supply circuits are configured with the circuit biased to 1/2 of the supply voltage. In these cases, a false­ground reference can be created by using a voltage divider buffered by an amplifier. Figure 38 shows the schematic for such a circuit.
The two 1 M resistors generate the reference voltage while drawing only 1.5 µA of current from a 3 V supply. A capacitor connected from the inverting terminal to the output of the op amp provides compensation to allow for a bypass capacitor to be connected at the reference output. This bypass capacitor helps establish an ac ground for the reference output. The entire reference generator draws less than 5 µA from a 3 V supply source.
Figure 38. A Micropower Bias Voltage Generator
A Window Comparator
The extremely low power supply current demands of the OPx81 family make it ideal for use in long life battery powered applica­tions such as a monitoring system. Figure 39 shows a circuit that uses the OP281 as a window comparator.
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OP181/OP281/OP481
5.1k
5.1k
+3V
V
OUT
Q1
+3V
R1
R2
V
IN
2k
+3V
R3
R4
+3V
V
H
A1
D1
10k
OP281-A
+3V
A2
V
L
D2
OP281-B
Figure 39. Using the OP281 as a Window Comparator
The threshold limits for the window are set by VH and VL, provided that V
> VL. The output of A1 will stay at the
H
negative rail, in this case ground, as long as the input voltage is less than V long the input voltage is higher than V between V
. Similarly, the output of A2 will stay at ground as
H
and VH, the outputs of both op amps will be 0 V.
L
. As long as VIN remains
L
With no current flowing in either D1 or D2, the base of Q1 will stay at ground, putting the transistor in cutoff and forcing V
OUT
to the positive supply rail. If the input voltage rises above VH, the output of A2 stays at ground, but the output of A1 will go to the positive rail, and D1 will conduct current. This creates a base voltage that will turn on Q1 and drive V condition occurs if V
falls below VL with A2’s output going
IN
high, and D2 conducting current. Therefore, V if the input voltage is between V
and VH, and V
L
low. The same
OUT
will be high
OUT
will be low
OUT
if the input voltage moves outside of that range. The R1 and R2 voltage divider sets the upper window voltage,
and the R3 and R4 voltage divider sets the lower voltage for the window. For the window comparator to function properly, V
H
must be a greater voltage than VL.
VH=
VL=
R2
R1+R2
R4
R3 + R4
The 2 k resistor connects the input voltage to the input termi­nals to the op amps. This protects the OP281 from possible excess current flowing into the input stages of the devices. D1 and D2 are small-signal switching diodes (1N4446 or equiva­lent), and Q1 is a 2N2222 or equivalent NPN transistor.
A Low-Side Current Monitor
In the design of power supply control circuits, a great deal of design effort is focused on ensuring a pass transistor’s long-term reliability over a wide range of load current conditions. As a result, monitoring and limiting device power dissipation is of prime importance in these designs. Figure 40 shows an example of a +5 V, single-supply current monitor that can be incorpo­rated into the design of a voltage regulator with fold-back current limiting or a high current power supply with crowbar protection. The design capitalizes on the OP181’s common­mode range that extends to ground. Current is monitored in the power supply return path where a 0.1 shunt resistor, R
SENSE
,
creates a very small voltage drop. The voltage at the inverting terminal becomes equal to the voltage at the noninverting terminal through the feedback of Q1, which is a 2N2222 or equivalent NPN transistor. This makes the voltage drop across R1 equal to the voltage drop across R
. Therefore, the
SENSE
current through Q1 becomes directly proportional to the current through R
, and the output voltage is given by:
SENSE
V
OUT
= VEE−
R2
× R
R1
SENSE
× I
L
The voltage drop across R2 increases with IL increasing, so V
decreases with higher supply current being sensed. For
OUT
the element values shown, the V –2.5 V/A, decreasing from V
V
OUT
+5V
Q1
R2
2.49k
R1 100
0.1
R
SENSE
EE
transfer characteristic is
OUT
.
+5V
OP181
RETURN TO GROUND
Figure 40. A Low-Side Load Current Monitor
Low Voltage Half-Wave and Full-Wave Rectifiers
Because of its quick overdrive recovery time, an OP281 can be configured as a full-wave rectifier for low frequency (<500 Hz) applications. Figure 41 shows the schematic.
R1 = 100k R2 = 100k
+3V
A2
OP281-B
FULL-WAVE RECTIFIED OUTPUT
HALF-WAVE RECTIFIED OUTPUT
VIN = 2V p-p
+3V
2k
A1
OP281-A
Figure 41. Single Supply Full- and Half-Wave Rectifiers Using an OP281
100
90
10
0%
SCALE 0.1V/DIV
SCALE 0.1ms/DIV
Figure 42. Full-Wave Rectified Signal
–12–
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OP181/OP281/OP481
Amplifier A1 is used as a voltage follower that will only track the input voltage when it is greater than 0 V. This provides a half­wave rectification of the input signal to the noninverting terminal of amplifier A2. When A1’s output is following the input, the inverting terminal of A2 will also follow the input from the virtual ground between the inverting and noninverting terminals of A2. With no potential difference across R1, no current flows through either R1 or R2, therefore the output of A2 will also follow the input. Now, when the input voltage goes below 0 V, the noninverting terminal of A2 becomes 0 V. This makes A2 work as an inverting amplifier with a gain of 1 and provides a full-wave rectified version of the input signal. A 2 k resistor in series with A1’s noninverting input protects the device when the input signal becomes less than ground.
A Battery Powered Telephone Headset Amplifier
Figure 43 shows how the OP281 can be used as a two-way amplifier in a telephone headset. One side of the OP281 can be used as an amplifier for the microphone, while the other side can be used to drive the speaker. A typical telephone headset uses a 600 speaker and an electret microphone that requires a supply voltage and a biasing resistor.
0.1µF
11k 300k
+3V
2.2k
INPUT
+3V
1M 1M
ELECTRET MIC
1µF
1µF
10k
POT.
1µF
1µF
+3V
1M
1M
50k10k
+3V
+3V
20k
OP281-B
20k
1µF
OP281-A
+3V
Q1
Q2
SPEAKER
MIC OUT
1µF
600
Figure 43. A Battery Powered Telephone Headset Two-Way Amplifier
The OP281-A op amp provides about 29 dB of gain for audio signals coming from the microphone. The gain is set by the 300 k and 11 k resistors. The gain bandwidth product of the amplifier is 95 kHz, which, for the set gain of 28, yields a –3 dB rolloff at 3.4 kHz. This is acceptable since telephone audio is band limited for 300 kHz to 3 kHz signals. If higher gain is required for the microphone, an additional gain stage should be used, as adding any more gain to the OP281 would limit the audio bandwidth. A 2.2 k resistor is used to bias the electret microphone. This resistor value may vary depending on the specifications on the microphone being used. The output of the microphone is ac coupled to the noninverting terminal of the op amp. Two 1 M resistors are used to provide the dc offset for single supply use.
The OP281-B amplifier can provide up to 15 dB of gain for the headset speaker. Incoming audio signals are ac coupled to a 10 k potentiometer that is used to adjust the volume. Again, two 1 M resistors provide the dc offset with a 1 µF capacitor establishing an ac ground for the volume control potentiometer. Because the OP281 is a rail-to-rail output amplifier, it would have difficulty driving a 600 Ω speaker directly. Here, a class AB buffer is used to isolate the load from the amplifier and also provide the necessary current drive to the speaker. By placing the buffer in the feedback loop of the op amp, crossover distortion can be minimized. Q1 and Q2 should have minimum betas of 100. The 600 speaker is ac coupled to the emitters to prevent any quiescent current from flowing in the speaker. The 1 µF coupling capacitor makes an equivalent high pass filter cutoff at 265 Hz with a 600 Ω load attached. Again, this does not pose a problem, as it is outside the frequency range for telephone audio signals.
The circuit in Figure 43 draws around 250 µA of current. The class AB buffer has a quiescent current of 140 µA while roughly 100 µA is drawn by the microphone itself. A CR2032 3 V lithium battery has a life expectancy of 160 mA hours, which means this circuit could run continuously for 640 hours on a single battery.
SPICE Macro-Model
* OP181 SPICE Macro-model * 9/96, Ver. 1 * * Copyright 1996 by Analog Devices * * Refer to “README.DOC” file for License Statement. Use of this * model indicates your acceptance of the terms and provisions in * the License Statement. * * Node Assignments * noninverting input * | inverting input * | | positive supply * | | | negative supply * | | | | output *|| | | | *|| | | | .SUBCKT OP181 1 2 99 50 45 * * INPUT STAGE * Q1 413PIX Q2 675PIX I1 99 8 1.28E-6 EOS 7 2 POLY(1) (12, 98) 80E-6 1 IOS 1 2 1E-10 RC1 4 50 500E3 RC2 6 50 500E3 RE1 3 8 108 RE2 5 8 108 V1 99 13 DC .9 V2 99 14 DC .9 D1 3 13 DX D2 5 14 DX * * CMRR76dB, ZERO AT 1kHz *
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OP181/OP281/OP481
ECM1 11 98 POLY(2) (1, 98) (2, 98) 0 .5 .5 R1 11 12 1.59E6 C1 11 12 100E-12 R2 12 98 283 * * POLE AT 900kHz * EREF 98 0 (90, 0) 1 G1 98 20 (4, 6) 1E-6 R3 20 98 1E6 C2 20 98 177E-15 * * POLE AT 500kHz * E2 21 98 (20, 98) 1 R4 21 22 1E6 C3 22 98 320E-15 * * GAIN STAGE * CF 45 40 8. 5E-12 R5 40 98 65. 65E6 G3 98 40 (22, 98) 4.08E-7 D3 40 41 DX D4 42 40 DX V3 99 41 DC 0.5 V4 42 50 DC 0.5 * * OUTPUT STAGE * ISY 99 50 1.375E-6 RS1 99 90 10E6 RS2 90 50 10E6 M1 45 46 99 99 POX L=1.5u W=300u M2 45 47 50 50 NOX L=1.5u W=300u EG1 99 46 POLY(1) (98, 40) 0.77 1 EG2 47 50 POLY(1) (40, 98) 0.77 1 * * MODELS * .MODEL POX PMOS (LEVEL=2, KP=25E-6, VTO=-0.75, LAMBDA=0.01) .MODEL NOX NMOS (LEVEL=2, KP=25E-6, VTO=0.75, LAMBDA=0.01) .MODEL PIX PNP (BF=200) .MODEL DX D(IS=1E-14) .ENDS
–14–
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Page 15
14 8
7
1
0.201 (5.10)
0.193 (4.90)
0.256 (6.50)
0.246 (6.25)
0.177 (4.50)
0.169 (4.30)
PIN 1
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.0118 (0.30)
0.0075 (0.19)
0.0256 (0.65)
BSC
0.0433 (1.10) MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
8° 0°
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
OP181/OP281/OP481
0.210 (5.33) MAX
0.160 (4.06)
0.115 (2.93)
0.022 (0.558)
0.014 (0.356)
0.1574 (4.00)
0.1497 (3.80)
0.0098 (0.25)
0.0040 (0.10)
8-Lead Plastic DIP
0.430 (10.92)
0.348 (8.84)
8
14
PIN 1
0.100 (2.54)
BSC
5
0.070 (1.77)
0.045 (1.15)
8-Lead SOIC
0.1968 (5.00)
0.1890 (4.80)
8
5
41
PIN 1
0.0688 (1.75)
0.0532 (1.35)
(N-8)
0.280 (7.11)
0.240 (6.10)
0.060 (1.52)
0.015 (0.38)
0.130 (3.30) MIN
SEATING PLANE
(SO-8)
0.2440 (6.20)
0.2284 (5.80)
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.0196 (0.50)
0.0099 (0.25)
0.195 (4.95)
0.115 (2.93)
x 45°
0.210 (5.33) MAX
0.160 (4.06)
0.115 (2.93)
0.1574 (4.00)
0.1497 (3.80)
0.0098 (0.25)
0.0040 (0.10)
14-Lead Plastic DIP
(N-14)
0.795 (20.19)
0.725 (18.42)
14
17
PIN 1
0.022 (0.558)
0.014 (0.356)
0.100 (2.54)
BSC
8
0.280 (7.11)
0.240 (6.10)
0.060 (1.52)
0.015 (0.38)
0.070 (1.77)
0.045 (1.15)
14-Lead Narrow Body SOIC
(SO-14)
0.3444 (8.75)
0.3367 (8.55)
14 8
71
PIN 1
0.0688 (1.75)
0.0532 (1.35)
0.130 (3.30) MIN
SEATING PLANE
0.2440 (6.20)
0.2284 (5.80)
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.0196 (0.50)
0.0099 (0.25)
0.195 (4.95)
0.115 (2.93)
x 45°
SEATING
PLANE
0.177 (4.50)
PIN 1
0.006 (0.15)
0.002 (0.05)
SEATING
PLANE
0.0500 (1.27)
BSC
0.122 (3.10)
0.114 (2.90)
8
0.169 (4.30)
1
0.0256 (0.65) BSC
0.0118 (0.30)
0.0075 (0.19)
0.0192 (0.49)
0.0138 (0.35)
0.0098 (0.25)
0.0075 (0.19)
8-Lead TSSOP
(RU-8)
5
0.256 (6.50)
0.246 (6.25)
4
0.0433 (1.10) MAX
0.0079 (0.20)
0.0035 (0.090)
8° 0°
8° 0°
0.0500 (1.27)
0.0160 (0.41)
0.028 (0.70)
0.020 (0.50)
SEATING
PLANE
0.0500
0.0192 (0.49)
(1.27)
0.0138 (0.35)
BSC
14-Lead TSSOP
0.0099 (0.25)
0.0075 (0.19)
(RU-14)
8° 0°
0.0500 (1.27)
0.0160 (0.41)
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C2195–12–10/96
–16–
PRINTED IN U.S.A.
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