Page 1
15 MHz, Rail-to-Rail,
FEATURES
Supports defense and aerospace applications
(AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
Wide bandwidth: 15 MHz
Low offset voltage: 325 µV maximum
Low noise: 9.5 nV/√Hz @ 1 kHz
Single-supply operation: 2.7 V to 12 V
Low supply current: 850 A maximum
Rail-to-rail output swing
Low TCV
High slew rate: 13 V/µs
No phase inversion
Unity-gain stable
APPLICATIONS
Portable instrumentation
Sampling ADC amplifiers
Precision filters
: 1 µV/°C typical
OS
Dual Operational Amplifier
OP262-EP
PIN CONFIGURATION
1
OUT A
–IN A
+IN A
Figure 1. 8-Lead Narrow-Body SOIC (R Suffix)
V–
OP262-EP
2
TOP VIEW
3
(Not to Scale)
4
GENERAL DESCRIPTION
The OP262-EP is a low power, precision op amp that features a
rail-to-rail output and a 15 MHz bandwidth. With its low offset
voltage of 45 μV (typical) and low noise, it is well suited for
precision filter and control applications.
This product operates from a single supply as low as 2.7 V or
from dual supplies up to ±6 V. The OP262-EP is specified over
the military temperature range (−55°C to +125°C) and is available
in an 8-lead SOIC_N package.
Additional applications information is available in the
OP162/OP262/OP462 data sheet.
8
7
6
5
V+
OUT B
–IN B
+IN B
9256-003
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
Page 2
OP262-EP
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Pin Configuration ............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
REVISION HISTORY
7/10—Revision 0: Initial Version
Absolute Maximum Ratings ............................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
Rev. 0 | Page 2 of 12
Page 3
OP262-EP
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 45 325 μV
−55°C ≤ TA ≤ +125°C 1 mV
Input Bias Current IB 360 600 nA
−55°C ≤ TA ≤ +125°C 650 nA
Input Offset Current IOS ±2.5 ±25 nA
−55°C ≤ TA ≤ +125°C ±40 nA
Input Voltage Range VCM 0 4 V
Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 4.0 V, −55°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain AVO R
R
R
Offset Voltage Drift1 ΔVOS/ΔT 1 μV/°C
Bias Current Drift ΔIB/ΔT 250 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH I
I
Output Voltage Swing Low VOL I
I
Short-Circuit Current ISC Short to ground ±80 mA
Maximum Output Current I
±30 mA
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 120 dB
−55°C ≤ TA ≤ +125°C 90 dB
Supply Current/Amplifier ISY V
−55°C ≤ TA ≤ +125°C 850 μA
DYNAMIC PERFORMANCE
Slew Rate SR 1 V < V
Settling Time tS To 0.1%, AV = −1, VO = 2 V step 540 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φm 61 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz
Current Noise Density in f = 1 kHz 0.4 pA/√Hz
1
Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta.
= 2 kΩ, 0.5 ≤ V
L
= 10 kΩ, 0.5 ≤ V
L
= 10 kΩ, −55°C ≤ TA ≤ +125°C 40 V/mV
L
= 250 μA, −55°C ≤ TA ≤ +125°C 4.95 4.99 V
L
= 5 mA 4.85 4.94 V
L
= 250 μA, −55°C ≤TA ≤ +125°C 14 50 mV
L
= 5 mA 65 150 mV
L
= 2.5 V 500 700 μA
OUT
< 4 V, RL = 10 kΩ 10 V/μs
OUT
≤ 4.5 V 30 V/mV
OUT
≤ 4.5 V 65 88 V/mV
OUT
Rev. 0 | Page 3 of 12
Page 4
OP262-EP
VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 50 325 μV
−55°C ≤ TA ≤ +125°C 1 mV
Input Bias Current IB 360 600 nA
Input Offset Current IOS ±2.5 ±25 nA
Input Voltage Range VCM 0 2 V
Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 2.0 V, −55°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain AVO R
R
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH I
I
Output Voltage Swing Low VOL I
I
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 110 dB
−55°C ≤ TA ≤ +125°C 60 dB
Supply Current/Amplifier ISY V
−55°C ≤ TA ≤ +125°C 850 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 10 V/μs
Settling Time tS To 0.1%, AV = −1, VO = 2 V step 575 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φm 59 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz
Current Noise Density in f = 1 kHz 0.4 pA/√Hz
= 2 kΩ, 0.5 V ≤ V
L
= 10 kΩ, 0.5 V ≤ V
L
= 250 μA 2.95 2.99 V
L
= 5 mA 2.85 2.93 V
L
= 250 μA 14 50 mV
L
= 5 mA 66 150 mV
L
= 1.5 V 500 650 μA
OUT
≤ 2.5 V 20 V/mV
OUT
≤ 2.5 V 20 30 V/mV
OUT
Rev. 0 | Page 4 of 12
Page 5
OP262-EP
VS = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 25 325 μV
−55°C ≤ TA ≤ +125°C 1 mV
Input Bias Current IB 260 500 nA
−55°C ≤ TA ≤ +125°C 650 nA
Input Offset Current IOS ±2.5 ±25 nA
−55°C ≤ TA ≤ +125°C ±40 nA
Input Voltage Range VCM −5 +4 V
Common-Mode Rejection CMRR −4.9 V ≤ VCM ≤ +4.0 V, −55°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain AVO R
R
−55°C ≤ TA ≤ +125°C 25 V/mV
Long-Term Offset Voltage1 VOS 600 μV
Offset Voltage Drift2 ΔVOS/ΔT 1 μV/°C
Bias Current Drift ΔIB/ΔT 250 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH IL = 250 μA, −55°C ≤ TA ≤ +125°C 4.95 4.99 V
I
Output Voltage Swing Low VOL IL = 250 μA, −55°C ≤ TA ≤ +125°C −4.99 −4.95 V
I
Short-Circuit Current ISC Short to ground ±80 mA
Maximum Output Current I
±30 mA
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6 V 110 dB
−55°C ≤ TA ≤ +125°C 60 dB
Supply Current/Amplifier ISY V
−55°C ≤ TA ≤ +125°C 1.15 mA
V
−55°C ≤ TA ≤ +125°C 1 mA
Supply Voltage Range VS 3.0 (±1.5) 12 (±6) V
DYNAMIC PERFORMANCE
Slew Rate SR −4 V < V
Settling Time tS To 0.1%, AV = −1, VO = 2 V step 475 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φm 64 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz
Current Noise Density in f = 1 kHz 0.4 pA/√Hz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta.
= 2 kΩ, –4.5 V ≤ V
L
= 10 kΩ, –4.5 V ≤ V
L
= 5 mA 4.85 4.94 V
L
= 5 mA −4.94 −4.85 V
L
= 0 V 650 800 μA
OUT
= 0 V 550 775 μA
OUT
< +4 V, RL = 10 kΩ 13 V/μs
OUT
≤ +4.5 V 35 V/mV
OUT
≤ +4.5 V 75 120 V/mV
OUT
Rev. 0 | Page 5 of 12
Page 6
OP262-EP
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Min
Supply Voltage ±6 V
Input Voltage1 ±6 V
Differential Input Voltage2 ±0.6 V
Internal Power Dissipation
SOIC (S) Observe Derating Curves
Output Short-Circuit Duration Observe Derating Curves
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range,
(Soldering, 10 sec) 300°C
1
For supply voltages greater than 6 V, the input voltage is limited to less than
or equal to the supply voltage.
2
For differential input voltages greater than 0.6 V, the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input
devices.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 5.
Package Type
1
θ
θJC
JA
Unit
8-Lead SOIC (R) 157 56 °C/W
1
θJA is specified for the worst-case conditions, that is, θJA is specified for a
device soldered in circuit board for SOIC package.
ESD CAUTION
Rev. 0 | Page 6 of 12
Page 7
OP262-EP
TYPICAL PERFORMANCE CHARACTERISTICS
250
200
VS = 5V
T
= 25°C
A
COUNT =
720 OP AMPS
125
100
V
= 5V
S
150
100
QUANTITY (Amplifiers)
50
0
–200 –140 –80 –20 10040 160
INPUT OFFSET VOLTAGE ( µ V )
Figure 2. Input Offset Voltage Distribution
100
80
60
40
QUANTIT Y (Amplifiers)
20
0
0.2 0.3 0.5 0.7 0.9 1.31.1 1.5
INPUT OFFSET DRIFT, TCV
OS
(µV,°C)
Figure 3. Input Offset Voltage Drift (TCVOS)
420
VS = 5V
T
= 25°C
A
COUNT =
360 OP AMPS
V
= 5V
S
75
50
INPUT OFFSET VOLTAGE (µV)
25
0
–75 –50 –25 0 25 50 10075 125 150
09256-007
TEMPERATURE ( ° C)
09256-010
Figure 5. Input Offset Voltage vs. Temperature
0
VS = 5V
–100
–200
–300
INPUT BIAS CURRENT ( n A)
–400
–500
–75 –50 –25 0 25 50 10075 125 150
09256-008
TEMPERATURE (°C)
09256-011
Figure 6. Input Bias Current vs. Temperature
15
= 5V
V
S
340
260
180
INPUT BIAS CURRENT ( n A)
100
0 0.5 1.0 1.5 2.0 3.02.5 3.5 4.0
COMMON-MODE VOLTAGE (V)
Figure 4. Input Bias Current vs. Common-Mode Voltage
09256-009
Rev. 0 | Page 7 of 12
10
5
INPUT OFFSET CURRENT ( nA)
0
–75 –50 –25 0 25 50 10075 125 150
TEMPERATURE (°C)
Figure 7. Input Offset Current vs. Temperature
09256-012
Page 8
OP262-EP
5.12
V
= 5V
S
5.06
I
= 250µA
5.00
4.94
OUTPUT HI GH VOLTAGE (V)
4.88
OUT
I
OUT
= 5mA
100
80
60
40
OUTPUT LOW VOLTAGE (mV)
20
VS = 10V
V
= 3V
S
4.82
–75 –50 –25 0 25 50 10075 125 150
TEMPERATURE ( ° C)
Figure 8. Output High Voltage vs. Temperature
0.10
0.08
0.06
0.04
OUTPUT LOW VOLTAGE (mV)
0.02
0
–75 –50 –25 0 25 50 10075 125 150
I
= 5mA
OUT
= 250µA
I
OUT
TEMPERATURE ( ° C)
Figure 9. Output Low Voltage vs. Temperature
100
RL = 10kΩ
80
0
01234567
09256-013
LOAD CURRENT (mA)
09256-016
Figure 11. Output Low Voltage to Supply Rail vs. Load Current
1.0
V
= 5V
S
09256-014
0.9
0.8
0.7
= 5V
V
0.6
0.5
0.4
0.3
SUPPLY CURRENT ( mA)
0.2
0.1
0
–75 –50 –25 0 25 1007550 125 150
S
TEMPERATURE (°C)
VS = 10V
VS = 3V
09256-017
Figure 12. Supply Current/Amplifier vs. Temperature
0.7
TA = 25°C
V
60
40
OPEN-LOOP GAIN (V/mV)
20
0
–75 –50 –25 0 25 50 10075 125 150
RL = 2kΩ
RL = 600kΩ
TEMPERATURE ( ° C)
Figure 10. Open-Loop Gain vs. Temperature
= 5V
S
09256-015
Rev. 0 | Page 8 of 12
0.6
0.5
SUPPLY CURRENT ( mA)
0.4
024681012
SUPPLY VOLTAGE (V)
Figure 13. Supply Current/Amplifier vs. Supply Voltage
09256-018
Page 9
OP262-EP
50
40
30
20
10
GAIN (dB)
0
–10
–20
–30
100k 1M 10M 100M
GAIN
FREQUENCY (Hz)
Figure 14. Open-Loop Gain and Phase vs. Frequency (No Load)
60
40
20
0
CLOSED-LOOP GAIN (dB)
–20
= 5V
V
S
T
= 25°C
A
PHASE
V
T
R
C
= 5V
S
= 25°C
A
= 830Ω
L
= 5pF
L
45
90
135
180
225
270
PHASE SHIFT ( Deg rees)
4
3
VS = 5V
2
T
= 25°C
A
1
0
–1
STEP SIZE (V)
–2
–3
–4
0 200 400 600 800 1000
09256-019
SETTLING TIME (ns)
0.01%0.1%
0.01%0.1%
09256-022
Figure 17. Step Size vs. Settling Time
60
VS = 5V
T
= 25°C
A
V
= ±50mV
OUT
50
R
= 10kΩ
L
40
30
OVERSHOOT (%)
20
10
+OS
–OS
–30
10k 100k 1M 10M 100M
FREQUENCY (Hz)
Figure 15. Closed-Loop Gain vs. Frequency
5
4
3
2
VS = 5V
A
= 1
VCL
R
= 10kΩ
L
1
C
MAXIMUM OUTPUT SWING (V p -p)
= 15pF
L
T
= 25°C
A
DISTORTION<1%
0
10k 100k 1M 10M
FREQUENCY (Hz)
Figure 16. Maximum Output Swing vs. Frequency
0
10 100 1000
09256-020
CAPACITANCE (pF)
09256-023
Figure 18. Small-Signal Overshoot vs. Capacitance
70
= 5V
V
S
T
60
50
40
30
20
NOISE DENSI TY (nV/ Hz )
10
0
1 10 100 1k
09256-021
FREQUENCY (Hz)
= 25°C
A
09256-024
Figure 19. Voltage Noise Density vs. Frequency
Rev. 0 | Page 9 of 12
Page 10
OP262-EP
7
V
6
5
4
3
2
NOISE DENSI TY (pA/ Hz)
1
0
1 10 100 1k
FREQUENCY (Hz)
T
Figure 20. Current Noise Density vs. Frequency
300
V
250
200
150
100
OUTPUT I M P EDANCE ( Ω)
50
0
100k 1M 10M
A
= 10
VCL
A
VCL
FREQUENCY (Hz)
T
= 1
Figure 21. Output Impedance vs. Frequency
90
V
80
70
T
= 5V
S
= 25°C
A
= 5V
S
= 25°C
A
= 5V
S
= 25°C
A
09256-025
09256-026
90
80
70
60
50
PSRR (dB)
40
30
20
1k 10k 100k 1M 10M
+PSRR –PSRR
FREQUENCY (Hz)
Figure 23. PSRR vs. Frequency
2s20mV
VS = 5V
A
= 100kΩ
V
e
= 0.5µV p-p
n
Figure 24. 0.1 Hz to 10 Hz Noise
2V
VIN = 12V p-p
V
= ±5V
S
A
= 1
V
V
S
T
A
= 5V
= 25°C
09256-028
09256-029
60
50
CMRR (dB)
40
30
20
1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 22. CMRR vs. Frequency
09256-027
2V
Figure 25. No Phase Reversal (V
20µs
= 12 V p-p, VS = ±5 V, AV = 1)
IN
09256-030
Rev. 0 | Page 10 of 12
Page 11
OP262-EP
OUTLINE DIMENSIONS
5.00(0.1968)
4.80(0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
012407-A
Figure 26. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
OP262TRZ-EP −55°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8
OP262TRZ-EP-R7 −55°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8
1
Z = RoHS Compliant Part.
Rev. 0 | Page 11 of 12
Page 12
OP262-EP
NOTES
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09256-0-7/10(0)
Rev. 0 | Page 12 of 12
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