Datasheet OP186 Datasheet (Analog Devices)

Page 1
5 mA, Rail-to-Rail
a
FEATURES Low Supply Current: 5.5 mA max Single-Supply Operation: 2.2 V to 12 V Wide Bandwidth: 160 kHz Wide Input Voltage Range Rail-to-Rail Output Swing No Phase Reversal Output Short Circuit Current: 610 mA
APPLICATIONS Portable Phones Comparator Battery Powered Instrumentation Safety Monitoring Remote Sensors Low Voltage Strain Gauge Amplifiers
GENERAL DESCRIPTION
The OP186 is a single, low voltage, ultralow power single­supply, amplifier featuring rail-to-rail outputs. Specifications are guaranteed at +2.2 V, +2.7 V, and +5.0 V single supply as well
as ±5 V dual supplies.
Fabricated on Analog Device’s CBCMOS process, the OP186 features a bipolar input and an output that swings to within millivolts of the supplies while continuing to sink or source current all the way to the supplies.
Applications for these amplifiers include safety monitoring, portable equipment, battery and power supply control, and as signal conditioning and interface for transducers in very low power systems.
The output’s ability to swing rail-to-rail and not increase supply current when the output is driven to a supply enables the OP186 to be used as a comparator in very low power systems.
The OP186 is specified over the extended industrial (–40°C to +125°C) temperature range. The OP186 is available in the
SOT-23-5 package.
Output Operational Amplifier
OP186
FUNCTIONAL BLOCK DIAGRAM
5-Lead SOT-23
(RT Suffix)
OUT
+IN
V+
1
OP186
2
TOP VIEW
(Not to Scale)
3
5
V–
4
–IN
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Page 2
OP186–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +2.2 V, VCM = +1.1 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift V Bias Current Drift I
1
OS
0°C T
B
0°C T
OS
0°C T
CM
CM
0°C T
VO
R
L
0°C T
/T 3.5 µV/°C
OS
/T 30 pA/°C
B
+125°C6mV
A
+125°C10nA
A
+125°C5nA
A
0 1.2 V
= 0 V to 1.2 V 65 90 dB
+125°C60 dB
A
= 1 M , V
A
= 0.3 V to 1.9 V 5 18 V/mV
O
+125°C 2 V/mV
0.8 5 mV
37 nA
0.1 2 nA
Offset Current Drift IOS/T 3 pA/°C
OUTPUT CHARACTERISTICS
R
Output Voltage High V
OH
= 100 k to GND 2.125 2.16 V
L
0°C to +125°C 2.1 V
R
Output Voltage Low V
OL
= 100 k to V+ 25 60 mV
L
0°C to +125°C75mV
Short Circuit Limit I
SC
±500 µA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.2 V to 12 V 78 95 dB
S
0°C T
+125°C76 dB
A
45 µA
0°C TA +125°C 5.5 µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R Turn-On Time A
= 100 k, C
L
= 1, V
V
= 20, V
A
V
= 15 pF 60 V/ms
L
= 1 17 µs
O
= 1 35 µs
O
Gain Bandwidth Product GBP 150 kHz
Phase Margin Φo 60 Degrees
NOISE PERFORMANCE␣
Voltage Noise Density e Current Noise Density i
NOTE
1
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
n
f = 1 kHz 80 nV/Hz
<1 pA/Hz
–2– REV. 0
Page 3
OP186
ELECTRICAL CHARACTERISTICS
(VS = +2.7 V, VCM = +1.35 V, TA = +258C unless otherwise noted)
1
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift V Bias Current Drift I
2
OS
–40°C T
B
–40°C T
OS
–40°C T
CM
CM
–40°C T
R
VO
= 1 M, V
L
–40°C T
/T 3.5 µV/°C
OS
/T 30 pA/°C
B
+125°C6mV
A
+125°C10nA
A
+125°C5nA
A
0 1.7 V
= 0 V to 1.7 V 65 90 dB
+125°C60 dB
A
= 0.3 V to 2.4 V 5 22 V/mV
O
+125°C 2 V/mV
A
0.6 5 mV
37 nA
0.1 2 nA
Offset Current Drift IOS/T 3 pA/°C
OUTPUT CHARACTERISTICS
R
Output Voltage High V
OH
= 100 k to GND 2.625 2.665 V
L
–40°C to +125°C 2.6 V
R
Output Voltage Low V
OL
= 100 k to V+ 22 50 mV
L
–40°C to +125°C75mV
Short Circuit Limit I
SC
±0.8 mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 12 V 78 95 dB
S
–40°C T
+125°C76 dB
A
4.2 5.5 µA
–40°C TA +125°C7µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R Turn-On Time A
=100 k, C
L
= 1, V
V
= 20, V
A
V
= 15 pF 61 V/ms
L
= 1 17 µs
O
= 1 25 µs
O
Gain Bandwidth Product GBP 155 kHz
Phase Margin Φo 59 Degrees
NOISE PERFORMANCE␣
Voltage Noise Density e Current Noise Density i
NOTES
1
+2.7 V specifications are guaranteed by +2.2 V and ±5 V testing.
2
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
n
f = 1 kHz 80 nV/Hz
<1 pA/Hz
–3–REV. 0
Page 4
OP186–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted)
1
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift V Bias Current Drift I
2
OS
–40°C T
B
–40°C T
OS
–40°C T
CM
CM
–40°C T
R
VO
= 1 M, V
L
–40°C T
/T –40°C TA +125°C 3.3 µV/°C
OS
/T 25 pA/°C
B
+125°C6mV
A
+125°C10nA
A
+125°C5nA
A
04V
= 0 V to 4.0 V 65 90 dB
+125°C60 dB
A
= 0.5 V to 4.5 V 5 40 V/mV
O
+125°C 2 V/mV
A
0.6 5 mV
37 nA
0.1 2 nA
Offset Current Drift IOS/T 3 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Short Circuit Limit I
OH
OL
SC
R
= 100 k to GND 4.925 4.965 V
L
–40°C T
R
= 100 k to V+ 20 50 mV
L
–40°C T
+125°C 4.9 V
A
+125°C75mV
A
±3.5 mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 12 V 78 95 dB
S
–40°C T
+125°C76 dB
A
4.7 6 µA
–40°C TA +125°C 7.5 µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R
= 100 k, C
L
= 15 pF 62 V/ms
L
Gain Bandwidth Product GBP 155 kHz
Phase Margin Φo 59 Degrees Saturation Recovery Time 60 µs
NOISE PERFORMANCE␣
Voltage Noise e Voltage Noise Density e
p-p 0.1 Hz to 10 Hz 6 µV p-p
n
n
f = 1 kHz 80 nV/Hz f = 10 kHz 70 nV/
Current Noise Density i
NOTES
1
+5 V specifications are guaranteed by +2.2 V and ± 5 V testing.
2
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
<1 pA/Hz
Hz
–4– REV. 0
Page 5
OP186
ELECTRICAL CHARACTERISTICS
(VS = 65.0 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift V Bias Current Drift I
1
OS
–40°C T
B
–40°C T
OS
–40°C T
CM
CM
–40°C T
R
VO
= 1 M, VO = ±4.0 V, 50 250 V/mV
L
–40°C T
/T3µV/°C
OS
/T 25 pA/°C
B
+125°C6mV
A
+125°C10nA
A
+125°C5nA
A
–5 +4 V
= –5.0 V to +4.0 V 65 90 dB
+125°C60 dB
A
+125°C 10 V/mV
A
0.6 5 mV
37 nA
0.1 2 nA
Offset Current Drift IOS/T 3 pA/°C
OUTPUT CHARACTERISTICS␣
R
Output Voltage Swing V
O
= 100 k to GND ±4.95 ±4.98 V
L
–40°C to +125°C ±4.90 V
Short Circuit Limit I
SC
±10 mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= ±1.35 V to ± 6 V 78 95 dB
S
–40°C T
V
= 0 V 5.2 7 µA
O
+125°C76 dB
A
–40°C TA +125°C8µA
DYNAMIC PERFORMANCE␣
Slew Rate ±SR R
= 100 k, C
L
= 15 pF 62 V/ms
L
Gain Bandwidth Product GBP 170 kHz
Phase Margin Φo 58 Degrees
NOISE PERFORMANCE␣
Voltage Noise e Voltage Noise Density e
p-p 0.1 Hz to 10 Hz 6 µV p-p
n
n
f = 1 kHz 80 nV/Hz f = 10 kHz 70 nV/
Current Noise Density i
NOTE
1
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
<1 pA/Hz
Hz
–5–REV. 0
Page 6
OP186
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . GND to V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . ±3.5 V
Output Short-Circuit Duration to GND . . . . . . . . . Indefinite
Storage Temperature Range
RT Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP186G . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
RT Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
2
For supplies less than ±5 V the differential input voltage is limited to the supplies.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP186 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
1
Package Type u
+ 10 V
S
5-Lead SOT-23 (RT) 230 140 °C/W
NOTE
1
θJA is specified for worst case conditions, i.e., θ
for SOT packages.
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
OP186GRT –40°C to +125°C 5-Lead SOT-23 RT-5
1
JA
u
JC
is specified for device in socket
JA
Units
–6– REV. 0
Page 7
45
0
5
V
S
= +5V
T
A
= +258C
40 35
30 25 20 15 10
INPUT OFFSET VOLTAGE – mV
22 21.5 21 20.5
0 0.5 1 1.5 2
QUANTITY – A
INPUT BIAS CURRENT – nA
TEMPERATURE – 8C
240
27
26
25
24
23
22
21
0
220
0 20 40 60 80 100 120 140
VS = 65V
VS = +2.2V
INPUT OFFSET CURRENT – nA
TEMPERATURE – 8C
–40
–0.3
–0.2
–0.1
0
0.1
0.2
0.3
0.4
–20
0 20 40 60 80 100 120 140
VS = +2.7V, +5V
Typical Performance Characteristics–
OP186
45 40 35
30 25 20
QUANTITY – A
15 10
5 0
22
21.5 21 20.5
INPUT OFFSET VOLTAGE – mV
VS = +2.2V T
= +258C
A
0 0.5 1 1.5 2
Figure 1. Input Offset Voltage Distribution
45 40 35
30 25 20
QUANTITY – A
15 10
5 0
22 21.5 21 20.5
INPUT OFFSET VOLTAGE – mV
VS = 65V T
= +258C
A
0 0.5 1 1.5 2
Figure 4. Input Offset Voltage Distribution
45
V
= +2.7V
40 35
30 25 20
QUANTITY – A
15 10
5 0
22 21.5 21 20.5
INPUT OFFSET VOLTAGE – mV
0 0.5 1 1.5 2
S
T
= +258C
A
Figure 2. Input Offset Voltage Distribution
350 300
250 200
150 100
INPUT OFFSET VOLTAGE – mV
250
2100
50
0
240
VS = +2.7V
0 20 40 60 80 100 120 140
220
TEMPERATURE – 8C
VS = +2.2V
VS = 65V
Figure 5. Input Offset Voltage vs. Temperature
Figure 3. Input Offset Voltage Distribution
Figure 6. Input Bias Current vs. Temperature
0
21
22
23
24
25
INPUT BIAS CURRENT – nA
26
27
240
Figure 7. Input Bias Current vs. Temperature
VS = 65.5V
0 20 40 60 80 100 120 140
220
TEMPERATURE – 8C
VS = +2.7V
1.0 VS = +5V
0.5 T
= +258C
A
0
20.5
21.0
21.5
22.0
22.5
INPUT BIAS CURRENT – nA
23.0
23.5
24.0
0 0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
COMMON-MODE VOLTAGE – Volts
Figure 8. Input Bias Current vs. Common-Mode Voltage
–7–REV. 0
Figure 9. Input Offset Current vs. Temperature
Page 8
OP186
g
LOAD CURRENT – mA
10
0.1
1
100
1k
1 100010 100
VS = 65V T
A
= +258C
SOURCE
SINK
OUTPUT VOLTAGE – mV
FREQUENCY – Hz
100
–30
–20
–10
0
10
20
30
40
50
60
70
1k 10k 100k
1M
270
225
180
135
90
45
0
VS = 65V T
A
= +258C
RL = 100kV
OPEN-LOOP GAIN – dB
PHASE SHIFT – Degrees
GAIN
PHASE
PSRR – dB
FREQUENCY – Hz
0
10 100 1k 10k 100k 1M
20
40
60
80
100
120
+2.7V # VS # +5V
TA = +258C R
L
= `
1k
VS = +2.7V T
= +258C
A
100
10
1
OUTPUT VOLTAGE – mV
0.1 1 100010 100
SOURCE
SINK
LOAD CURRENT – mA
Figure 10. Output Voltage to Supply Rail vs. Load Current
70 60 50 40 30 20 10
0
OPEN-LOOP GAIN – dB
210 220 230
100
GAIN
PHASE
1k 10k 100k
FREQUENCY – Hz
VS = +2.2V T
= +258C
A
R
= 100kV
L
0 45 90 135 180 225 270
1M
1k
VS = +5V T
= +258C
A
100
10
1
OUTPUT VOLTAGE – mV
0.1 1 100010 100
SOURCE
LOAD CURRENT – mA
SINK
Figure 11. Output Voltage to Supply Rail vs. Load Current
70 60 50 40 30 20 10
0 OPEN-LOOP GAIN – dB –10
PHASE SHIFT – Degrees
–20 –30
100
1k 10k 100k
GAIN
PHASE
FREQUENCY – Hz
VS = +5V T
= +258C
A
R
= 100kV
L
1M
Figure 12. Output Voltage to Supply Rail vs. Load Current
0 45
rees
90 135 180 225
PHASE SHIFT – De
270
Figure 13. Open-Loop Gain and Phase vs. Frequency
50
40
30
20
10
0
–10
CLOSED-LOOP GAIN – dB
–20
–30
10
Figure 16. Closed-Loop Gain vs. Frequency
FREQUENCY – Hz
VS = +5V T
= +258C
A
R
=
L
100k10k1k100 1M
Figure 14. Open-Loop Gain and Phase vs. Frequency
120
+2.7V
100
80
60
CMRR – dB
40
20
1k
# VS # +5V
10k
FREQUENCY HZ
100k
T
= +258C
A
1M 10M
Figure 17. CMRR vs. Frequency
–8– REV. 0
Figure 15. Open-Loop Gain and Phase vs. Frequency
Figure 18. PSRR vs. Frequency
Page 9
OP186
FREQUENCY – Hz
5
10
2
100 1k 10k 100k
3
0
1
4
VS = +5V V
IN
= 4V p-p
A
VCL
= +1
R
L
=
T
A
= +258C
MAXIMUM OUTPUT SWING – V p-p
COMMON MODE VOLTAGE – V
2
0 0.5
2.25
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VS = +5V
R
L
=
T
A
= +258C
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
SUPPLY CURRENT – mA
65
VS = +5V
60
VIN = 100mV p-p
55
A
= +1
VCL
50
RL = 100kV
45
T
= +258C
A
40 35 30 25 20 15 10
SMALL SIGNAL OVERSHOOT – %
5 0
10 1000100
CAPACITANCE – pF
+OS
2OS
Figure 19. Small Signal Overshoot vs. Load Capacitance
6.5
6
5.5 VS = 65V
VS = 65V
5
VS = +5V
4.5
4
INPUT BIAS CURRENT – nA
3.5
VS = +2.7V
3
–20
–40
VS = +2.2V
0 20 40 60 80 100 120 140
TEMPERATURE – 8C
Figure 22. Bias Current vs. Temperature
3
2
VS = +2.7V
= 2V p-p
V
IN
= +1
A
1
VCL
=
R
L
= +258C
T
A
MAXIMUM OUTPUT SWING – V p-p
0
10
100 1k 10k 100k
FREQUENCY – Hz
Figure 20. Maximum Output Swing vs. Frequency
6
TA = +258C
5.5 5
4.5 4
3.5 3
2.5 2
1.5
SUPPLY CURRENT – mA
1
0.5 0
0 0.5
2.5
1 1.5 2
SUPPLY VOLTAGE – 6V
3 3.5 4 4.5 5 5.5 6
Figure 23. Supply Current vs. Supply Voltage
Figure 21. Maximum Output Swing vs. Frequency
Figure 24. Supply Current vs. Common-Mode Voltage
500mV 100ms
Figure 25. Large Signal Transient Response
VS = +2.7V AV = +1 R
L
CL = 50pF T
A
= 100kV
= +258C
VS = +5V A
= +1
V
RL = 100kV CL = 50pF T
= +258C
A
1.0V 100ms
Figure 26. Large Signal Transient Response
–9–REV. 0
VS = 61.35V AV = +1 R
= 100kV
L
CL = 50pF T
= +258C
A
50mV 100ms
Figure 27. Small Signal Transient Response
Page 10
OP186
500mV 100ms
VS = 61.35V A
VOL
= CIRCUIT
V
IN
= 61V p-p
R
L
=
T
A
= +258C
VS = 62.5V AV = +1 R
= 100kV
L
CL = 50pF T
= +258C
50mV 100ms
A
VS = +5V T
= +258C
A
1.0V 200ms
Figure 28. Small Signal Transient
Figure 29. No Phase Reversal
Response
1.0V
VS = –2.5V
= CIRCUIT
A
VOL
= –1V p-p
V
IN
=
R
L
= +258C
T
A
100ms
Figure 31. Saturation Recovery Time
APPLICATIONS
The OP186 is very similar in design to the OP181. Please see the OP181/OP281/OP481 data sheet for applications information.
Design of the OP186 was based on the OP181. The major dif­ference is that the trim structures have been removed. This results in the offset of the OP186 being higher than the OP181. There are no other major changes to the circuit. Other perfor­mance differences, such as the higher bandwidth and slightly higher supply current, also result from the removal of the trim resistors.
Figure 30. Saturation Recovery Time
–10– REV. 0
Page 11
OP186
SPICE MODEL * OP186 SPICE Macro-model Typical Values * 2/98, Ver. 1 * TAM / ADSC
*
* Copyright 1998 by Analog Devices * * Refer to “README.DOC” file for License State-
* ment. Use of this * model indicates your acceptance of the terms
* and provisions in * the License Statement. * * Node Assignments * noninverting input * | inverting input * | | positive supply * | | | negative supply * | | | | output *|| | || *|| | || .SUBCKT OP186 1 2 99 50 45 * * INPUT STAGE * Q1 4 1 3 PIX Q2 6 7 5 PIX RC1 4 50 100E3 RC2 6 50 100E3 RE1 3 8 6.452E3 RE2 5 8 6.452E3 C1 4 6 50E-15 I1 99 8 1E-6 EOS 7 2 POLY(2) (12,98) (73,98) 800E-6 1 1 IOS 1 2 50E-12 V1 99 9 0.9 V2 99 10 0.9 D1 3 9 DX D2 5 10 DX * * CMRR 90dB, ZERO AT 1kHz * ECM1 11 98 POLY(2) (1,98) (2,98) 0 .5 .5 RCM1 11 12 1.59E6 CCM1 11 12 100E-12 RCM2 12 98 50 * * PSRR=100dB, ZERO AT 200Hz *
RPS1 70 0 1E6 RPS2 71 0 1E6 CPS1 99 70 1E-5 CPS2 50 71 1E-5 EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1 RPS3 72 73 1.59E6 CPS3 72 73 500E-12 RPS4 73 98 15.9 * * INTERNAL VOLTAGE REFERENCE * EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5 GSY 99 50 POLY(1) (99,50) 2E-6 .1E-6 * * POLE AT 600kHz; ZERO AT 900kHz * G1 98 20 (4,6) 11.3E-6 R1 20 98 88.46E3 R2 20 21 176.8E3 C2 21 98 1E-12 * * GAIN STAGE * G4 98 30 (20,98) 19.54E-6 R7 30 98 111.6E6 CF 45 30 32E-12 D3 30 31 DX D4 32 30 DX V3 99 31 0.6 V4 32 50 0.6 * * OUTPUT STAGE * M1 45 46 99 99 POX L=2u W=100u M2 45 47 50 50 NOX L=2u W=98u EG1 99 46 POLY(1) (98,30) 0.82 1 EG2 47 50 POLY(1) (30,98) 0.79 1 * * MODELS * .MODEL POX PMOS (LEVEL=2, KP=10E-6, + VTO=-0.75, LAMBDA=0.01) .MODEL NOX NMOS (LEVEL=2, KP=17E-6, + VTO=0.75, LAMBDA=0.01) .MODEL PIX PNP (BF=185,KF=1.6E-12,AF=1) .MODEL DX D(IS=1E-14) .ENDS OP186
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Page 12
OP186
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
5-Lead SOT-23
(RT Suffix)
0.1181 (3.00)
0.1102 (2.80)
0.0669 (1.70)
0.0590 (1.50)
0.0512 (1.30)
0.0354 (0.90)
0.0059 (0.15)
0.0019 (0.05)
PIN 1
1 3
2
0.0748 (1.90) BSC
0.0197 (0.50)
0.0138 (0.35)
4 5
0.1181 (3.00)
0.1024 (2.60)
0.0374 (0.95) BSC
0.0571 (1.45)
0.0374 (0.95)
SEATING PLANE
108
08
C3330–8–4/98
0.0079 (0.20)
0.0031 (0.08)
0.0217 (0.55)
0.0138 (0.35)
–12–
PRINTED IN U.S.A.
REV. 0
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