Page 1
OMH310
OMH315
DU AL, LOW V OLTAGE, LOW R
DS(on)
, MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
FEATURES
• H-Bridge Configuration
• Zener Gate Protection
• 10 m Shunt Resistor
• 2 Linear Thermal Sensors, One For Each Bridge
• Isolated Package
• Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
DD
2.1
DS
DM
DS
DGR
(1)
(TC= @ 25°C)
R
DS(on)
I
D
(TC= @ 25°C unless otherwise noted)
50 50 V
50 50 V
56 100 A
(2)
(2)
20 50 W
1 1 18 W
Package
MAXIMUM RATINGS
Part V
Number (Volts) (m ) (Amps)
OMH310 50 100 15 MP-3
OMH315 50 70 20 MP-3
ABSOLUTE MAXIMUM RATINGS
Parameter OMH310 OMH315 Units
Drain Source Voltage, V
Drain-Gate (RGS= 1m ), V
Continuous Drain Current, ID@ TC= 25°C 15 25 A
Continuous Drain Current, ID@ TC= 70°C 11 16 A
Pulse Drain Current, I
Maximum Power Dissipation, PD@ TC= 25°C
Maximum Power Dissipation, PD@ TC= 70°C
Linear Derating Factor, Junction-To-Case 0. 2 0.33 W/C
Thermal Resistance, Junction-To-Case 5.0 3.0 °C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.
4 11 R0
2.1 - 29
Page 2
OMH310 OMH315
2.1
ELECTRICAL CHARACTERISTICS: OMH310
(TC= 25° unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID= 250 µA, VGS= 0 V
Zero Gate Voltage Drain Current = V
Gate-Body Leakage, V
= ±12 V I
GS
, VDS= Max. Rat. I
GS
= Max. Rat. x 0.8, TC= 70°C - - 500.0 µA
V
DS
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS= VGS, ID= 250 µA V
Static Drain-Source On-Resistance, V
Static Drain-Source On-Resistance T
On State Drain Current, V
> I
DS
= 10 Vdc, ID= 9.0 A R
GS
= 70°C - - 0.2
C
X R
D(on)
Max., VGS= 10 V I
DS(on)
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS> I
Input Capacitance V
Output Capacitance V
Reverse Transfer Capacitance f = 1.0 mHz C
D(on)
X R
Max., ID= 9.0A g
DS(on)
DS
= 25 V, C
= 0, C
GS
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
Rise Time V
Turn-Off Delay Time R
= 30 V, ID= 3 A, t
DD
= 50 , VGS= 10 V t
GS
Fall Time t
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current I
Source - Drain Current Pulsed I
Forward On-Voltage, I
Reverse Recovery Time
Reverse Recovered Charge Q
= 28 A, VGS= 0 V
SD
I
= 13 A, di/dt = 100 A/µSec
SD
RESISTOR CHARACTERISTICS
Resistor Tolerance R
Temperature Coefficient, -40°C to +70°C T
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
(BR)DSS
DSS
GSS
GS(th)
DS(on)
D(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
*--56A
SDM
SD
t
rr
rr
S
cr
50--V
- - 25.0 µA
- - ±500 nA
2.0 - 4.0 V
- - 0.1
15--A
3.0 - - mho
- - 650 pF
- - 450 pF
- - 280 pF
- - 30 ns
- - 85 ns
- - 90 ns
- - 110 ns
--14A
- - 1.8 V
- 120 - ns
- 0.15 - µC
9.0 10 11 m
- 100 - ppm
2.1 - 30
Page 3
OMH310 OMH315
ELECTRICAL CHARACTERISTICS: OMH315A
(TC= 25° unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID= 250 µA, VGS= 0 V
Zero Gate Voltage Drain Current = V
Gate-Body Leakage, V
= ±12 V I
GS
, VDS= Max. Rat. I
GS
= Max. Rat. x 0.8, TC= 70°C - - 750 µA
V
DS
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS= VGS, ID= 250 µA V
Static Drain-Source On-Resistance, V
Static Drain-Source On-Resistance T
On State Drain Current, V
> I
DS
= 10 Vdc, ID= 10 A R
GS
= 70°C - - 0.14
C
X R
D(on)
Max., VGS= 10 V I
DS(on)
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS> I
Input Capacitance V
Output Capacitance V
Reverse Transfer Capacitance f = 1.0 mHz C
D(on)
X R
Max., ID= 10 A g
DS(on)
DS
= 25 V, C
= 0, C
GS
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
Rise Time
Turn-Off Delay Time
Fall Time
= 30 V, ID= 10 A,
V
DD
= 4.7 , VGS= 10 V,
R
GS
R
= 2.4
L
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current I
Source - Drain Current (Pulsed) I
Forward On-Voltage, I
Reverse Recovery Time t
Reverse Recovered Charge
= 28 A, VGS= 0 V
SD
= 13 A,di/dt = 100 A/µSec
I
SD
RESISTOR CHARACTERISTICS
Resistor Tolerance R
Temperature Coefficient, -40°C to +70°C T
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
(BR)DSS
DSS
GSS
GS(th)
DS(on)
D(on)
fs
iss
oss
rss
d(on)
t
r
t
d(off)
t
f
SD
* - - 100 A
SDM
SD
rr
Q
rr
S
cr
50--V
- - 250 µA
- - ±500 nA
2.0 - 4.0 V
- - 0.07
20--A
5.0 - - mho
- 1020 - pF
- 500 - pF
- 120 - pF
- - 50 ns
- - 75 ns
- - 50 ns
- - 50 ns
--25A
- - 2.4 V
- 100 - ns
- 0.15 - µC
9.0 10 11 m
- 100 - ppm
2.1
2.1 - 31
Page 4
OMH310 OMH315
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Q1
R1
Z1
Q3
R3
Z3
Q5
R5
Z5
Q2
R2
Z2
Q4
R4
Z4
Q6
R6
Z6
Q7
R7
Z7
Q8
R8
Z8
PTC 1
PTC 2
RS
RS
7 6 5 8 11 12 13 9 1 6 10 21 22
14
15
20
19
1734
32 26 31 30 29 28 24 25
27
1
2
34
33
23 18
.360
.180
.020
.360 MAX.
2.000
1.350
.150
(4) PLCS.
4.0003.000
.150
.500
.500
.250
.250
.600
.325
.050
(34) PLCS.
.300
2.450
.135
SCHEMATIC
2.1
MECHANICAL OUTLINE
1
Mounting Recommendations: Maximum Mounting Torque: 3.0 mN.
The module must be attached to a flat heat sink (flatness 100µm maximum).
Pin 1: Gate Q2
Pin 2: Source Q2
Pin 3: PTC 1
Pin 4: PTC 1
Pin 5: Gate Q4
Pin 6: Source Q4
Pin 7: Sense R 1
Pin 8: Sense R 1
Pin 9: Gate Q6
Pin 10: Source Q6
Pin 11: Return Sense
Pin 12: Return
Pin 13: Return
Pin 14: Gate Q8
Pin 15: Source Q8
Pin 16: Sense R 2
Pin 17: Sense R 2
Contact factory for lead bending options.
Pin 34: Gate Q1
Pin 33: Source Q1
Pin 32: Output Q1, Q2
Pin 31: Gate Q3
Pin 30: Source Q3
Pin 29: V
Pin 28: V
Pin 27: V
M
M
M
Pin 26: Output Q3, Q4
Pin 25: Gate Q5
Pin 24: Source Q5
Pin 23: Output Q5, Q6
Pin 22: +PTC
Pin 21: -PTC
Pin 20: Gate Q7
Pin 19: Source Q7
Pin 18: Output Q7, Q8
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