Page 1
Preliminary Data Sheet
.125
.145
.071
.250
MIN.
.100
.018
1.000
.785
.550
1.140
1.100
.250
MAX.
.062
.250
.690
.930
.115
.057
.010
.190
OM6423SP6
OM6424SP6
POWER MOSFETS IN 11-PIN INDUSTRIAL
SIP PACKAGE
Industrial 11-Pin, 150 to 500 V, N-Channel
Power MOSFET, Full “H” Bridge
FEATURES
• Low R
• Fast Switching
• Single SIP Package
• 3 Voltage, Current Ratings
DESCRIPTION
This series of “H” Bridge configured circuits provides the user with a low cost solution
to power control. Ideally suited for stepper motors, limited span designs, lighting
systems, and D.C. motor applications.
DS(on)
OM6425SP6
OM6426SP6
SCHEMATIC
1 2 3 4 5,6,7 8 9 10 11
FOR FURTHER INFORMATION, CONTACT FACTORY DIRECT OR YOUR LOCAL SALES REPRESENTATIVE.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
MECHANICAL OUTLINE
2.1
4 11 R1
Supersedes 2 07 R0
2.1 - 123
Page 2
OM6423SP6 - OM6426SP6
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ELECTRICAL CHARACTERISTICS: T = 25° unless otherwise noted.
Characteristic Symbol Min. Max. Min. Max. Units
Drain-Source Breakdown Voltage V
(VGS= 0, ID= 0.25mA) 50 150 100 -
Zero Gate Voltage Drain Current I
(VDS= Rated V
= Rated V
(V
DS
Gate-Body Leakage Current, Forward I
Gate Threshold Voltage V
Static Drain-Source-On-Resistance
Drain-Source-On-Voltage @ I
Forward Transconductance (V
Input Capacitance (V
Output Capacitance V
Reverse Transfer Capacitance f = 1MHz) C
Turn-On Delay Time (V
Turn-Off Delay Time (V
Source Drain Diode Forward On Voltage I
= ±20 Vdc, VDS= 0) 500 500 500 500
(V
GSF
= VGS, ID= 250µA) 2.0 4.0 2.0 4.0
(V
DS
= 10Vdc)r
(V
GS
= 10V, TJ= 85°C) V
(V
GS
6423SP6 6424SP6
(BR)DSS
, VGS= 0) - 250 - 250 µA
DSS
, VGS= 0, TJ= 85°C) - 1000 - 1000
DSS
= 10V, ID= 12A) g
DS
= 25V, C
DS
= 0, C
GS
= 25V, ID= 2A) t
DD
= 25V, ID= 2A) t
DD
= 10 V
f
DSS
GSSF
GS(th)
DS(on)
D
DS(on)
FS
iss
oss
rss
d(on)
d(off)
SD
.02 .08 - .16
= - 5.0 - 4.0 A
- .4 - .64 V
- 8.0 - 5.0 mhos
- 700 - 850 pF
- 450 - 260 pF
- 180 - 50 pF
- 20 - 30 ns
- 110 - 40 ns
- 1.6 - 1.6 V
V
nA
dc
V
2.1
ELECTRICAL CHARACTERISTICS: T = 25° unless otherwise noted.
6425SP6 6426SP6
Characteristic Symbol Min. Max. Min. Max. Units
Drain-Source Breakdown Voltage V
(VGS= 0, ID= 0.25mA) 200 - 500 - V
Zero Gate Voltage Drain Current I
(VDS= Rated V
= Rated V
(V
DS
, VGS= 0) - 250 - 250 µA
DSS
, VGS= 0, TJ= 85°C) - 1000 - 1000
DSS
Gate-Body Leakage Current, Forward I
= ±20 Vdc, VDS= 0) 500 500 500 500
(V
GSF
Gate Threshold Voltage V
= VGS, ID= 250µA) 2.0 4.0 2.0 4.0
(V
DS
Static Drain-Source-On-Resistance
= 10Vdc)r
(V
GS
Drain-Source-On-Voltage @ I
= 10V, TJ= 85°C) V
(V
GS
Forward Transconductance (V
Input Capacitance (V
Output Capacitance V
= 10V, ID= 12A) g
DS
= 25V, C
DS
= 0, C
GS
Reverse Transfer Capacitance f = 1MHz) C
Turn-On Delay Time (V
Turn-Off Delay Time (V
Source Drain Diode Forward On Voltage I
= 25V, ID= 2A) t
DD
= 25V, ID= 2A) t
DD
= 4 V
f
(BR)DSS
DSS
GSSF
GS(th)
DS(on)
D
DS(on)
FS
iss
oss
rss
d(on)
d(off)
SD
- .8 - 3.0
= - 2.0 - 1.0 A
- 1.6 - 3.0 V
- 1.3 - 1.0 mhos
- 600 - 400 pF
- 300 - 150 pF
-80-40pF
- 40 - 60 ns
- 100 - 30 ns
- 1.6 - 1.6 V
dc
nA
V
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