Datasheet om6413sp3 Datasheet

THREE PHASE MOSFET HALF BRIDGE

G

S

D

G

S

D

G

S

D

G

S

D

G

S

D

G

S

D

1 3 4 5 6 9 10 11 12 14 15 16 17 18

IN A PLASTIC SIP PACKAGE

100V Thru 500V, Up to 6 Amp, Three Phase
MOSFET Half Bridge

FEATURES

• Isolated High Density, Low Profile Package

• 6 MOSFETs Per Package

• Fast Switching, Low Drive Current

• Heat Sinkable

• Low R

• P-Channel Also Available

DESCRIPTION

This series of three phase MOSFET half bridge products feature the latest advanced
MOSFET and packaging technology. They are ideally suited where small size, high
performance and high reliability are required in applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse
circuits.

DS(on)

OM6413SP3
OM6414SP3

OM6415SP3
OM6416SP3

2.1

MAXIMUM RATINGS (Per MOSFET)

PART NUMBER V

SCHEMATIC PIN CONNECTION

4 11 R1
Supersedes 1 06 R0

Pin 1: V
Pin 2: N/C Pin 6: Drain/Source Pin 10: Gate Pin 14: Gate Pin 18: V
Pin 3: Gate Pin 7: N/C Pin 11: Source Pin 15: Gate

Pin 4: Gate Pin 8: N/C Pin 12: Drain/Source Pin 16: Source

CC

DS

R

DS(on)

I

D(MAX)

OM6413SP3 100V .085 6A
OM6414SP3 200V .180 4A
OM6415SP3 400V .55 2.5A
OM6416SP3 500V .85 2A

1357911131517

2 4 6 8 10 12 14 16 18

Pin 5: Source Pin 9: Gate Pin 13: N/C Pin 17: Drain/Source

CC

Note: Pin 1 and Pin 18 are common

2.1 - 115

2.1

G

D

S

G

D

S

OM6413SP3 - OM6416SP3

ELECTRICAL CHARACTERISTICS: T

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM6413SP3 STATIC P/N OM6414SP3

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 100 V VGS= 0, BV

DSS

V

GS(th)

I

GSSF

I

GSSR

I

DSS

I

D(on)

V

DS(on)

R

DS(on)

R

2.1 - 116

DS(on)

Voltage I
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
Gate-Body Leakage Forward 100 nA VGS= 20 V I
Gate-Body Leakage Reverse -100 nA VGS= - 20 V I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
Current 0.2 1.0 mA V

On-State Drain Current

1

6AV

Static Drain-Source On-State 1.275 1.425 V VGS= 10 V, ID= 6 A V

1

Voltage
Static Drain-Source On-State .085 .095 VGS= 10 V, ID= 6 A R
Resistance

1

Static Drain-Source On-State .130 .155 VGS= 10 V, ID= 6 A, R
Resistance

1

= 250 mA Voltage ID= 250 mA

D

= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,

DS

T

= 100° C TC= 100° C

C

2 V

DS

, VGS= 10 V I

DS(on)

TC= 100 C Resistance

DYNAMIC DYNAMIC

g

Forward Transductance

fs

C

Input Capacitance 1275 1600 pF VGS= 0 C

iss

C

Output Capacitance 550 800 pF VDS= 25 V C

oss

C

Reverse Transfer Capacitance 160 300 pF f = 1 MHz C

rss

T

Turn-On Delay Time 16 30 ns VDD= 30 V, ID@ 15 A T

d(on)

t

Rise Time 19 60 ns Rg= 5 W, RL= 2 W t

r

T

Turn-Off Delay Time 42 80 ns T

d(off)

t

Fall Time 24 30 ns t

f

1

6.0 7.2 S VDS 2 V

(MOSFET) switching times are
essentially independent of
operating temperature.

, ID= 6 A g

DS(on)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current - 6 A Modified MOSPOWER I

S

(Body Diode) symbol showing

I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle

1

1

- 20 A

- 2.5 V TC= 25 C, IS= -12 A, VGS= 0 VSDDiode Forward Voltage

2%.

the integral P-N I

dl

/ds = 100 A/ms dlF/ds = 100 A/ms

F

1 Pulse Test: Pulse Width 300msec, Duty Cycle

Drain-Source Breakdown 200 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage Forward 100 nA VGS= 20 V

GSSF

Gate-Body Leakage Reverse - 100 nA VGS= - 20 V

GSSR

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current

D(on)

Static Drain-Source On-State 1.4 1.8 V VGS= 10 V, ID= 4 A

DS(on)

DS(on)

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

S

1

Voltage
Static Drain-Source On-State 0.14 0.18 VGS= 10 V, ID= 4 A
Resistance

1

Static Drain-Source On-State 0.28 0.36 VGS= 10 V, ID= 4 A,

1

Forward Transductance
Input Capacitance 1000 1600 pF VGS= 0
Output Capacitance 250 750 pF VDS= 25 V
Reverse Transfer Capacitance 100 300 pF f = 1 MHz
Turn-On Delay Time 17 30 ns VDD= 75 V, ID@ 10 A
Rise Time 52 60 ns Rg= 5 W, RL= 7.3 W
Turn-Off Delay Time 36 80 ns
Fall Time 30 60 ns

Continuous Source Current - 4 A Modified MOSPOWER

1

1

4AV

6.0 9.0 S VDS 2 V

(Body Diode) symbol showing
Source Current

SM

Reverse Recovery Time 350 ns TJ= 150 C,IF= IS,

rr

1

1

- 25 A

- 2 V TC= 25 C, IS= -9 A, VGS= 0

2%.

, I

= 250 mA

GS

D

2 V

DS

, VGS= 10 V

DS(on)

TC= 100 C

, ID= 4 A

DS(on)

(MOSFET) switching times are
essentially independent of
operating temperature.

the integral P-N

ELECTRICAL CHARACTERISTICS: T

G

D

S

G

D

S

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM6415SP3 STATIC P/N OM6416SP3

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 400 V VGS= 0, BV

DSS

V

GS(th)

I

GSSF

I

GSSR

I

DSS

I

D(on)

V

DS(on)

R

DS(on)

R

2.1 - 117

DS(on)

Voltage I

Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV

Gate-Body Leakage Forward 100 nA VGS= 20 V I

Gate-Body Leakage Reverse -100 nA VGS= - 20 V I

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I

Current 0.2 1.0 mA V

On-State Drain Current

1

2.5 A VDS 2 V

Static Drain-Source On-State 2.35 2.75 V VGS= 10 V, ID= 2.5 A V

1

Voltage

Static Drain-Source On-State 0.47 0.55 VGS= 10 V, ID= 2.5 A R

Resistance

1

Static Drain-Source On-State 0.93 1.10 VGS= 10 V, ID= 2.5 A, R

Resistance

1

= 250 mA Voltage ID= 250 mA

D

= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,

DS

T

= 100° C TC= 100° C

C

, VGS= 10 V I

DS(on)

TC= 100 C Resistance

DYNAMIC DYNAMIC

g

Forward Transductance

fs

C

Input Capacitance 1150 1600 pF VGS= 0 C

iss

C

Output Capacitance 165 450 pF VDS= 25 V C

oss

C

Reverse Transfer Capacitance 70 150 pF f = 1 MHz C

rss

T

Turn-On Delay Time 17 35 ns VDD= 175 V, ID@ 5 A T

d(on)

t

Rise Time 12 15 ns Rg= 5 W, RL= 35 W t

r

T

Turn-Off Delay Time 45 90 ns T

d(off)

t

Fall Time 30 35 ns t

f

1

4.0 4.4 S VDS 2 V

(MOSFET) switching times are
essentially independent of
operating temperature.

, ID= 2.5 A g

DS(on)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current - 2.5 A Modified MOSPOWER I

S

(Body Diode) symbol showing (Body Diode) symbol showing
I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1

1

- 10 A the integral P-N I

- 2 V TC= 25 C, IS= -5 A, VGS= 0 VSDDiode Forward Voltage

dl

/ds = 100 A/ms dlF/ds = 100 A/ms

F

Drain-Source Breakdown 500 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage Forward 100 nA VGS= 20 V

GSSF

Gate-Body Leakage Reverse - 100 nA VGS= - 20 V

GSSR

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current

D(on)

Static Drain-Source On-State 3.2 3.4 V VGS= 10 V, ID= 2 A

DS(on)

DS(on)

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

S

SM

rr

1

Voltage
Static Drain-Source On-State 0.8 0.85 VGS= 10 V, ID= 2 A
Resistance

1

Static Drain-Source On-State 1.50 1.65 VGS= 10 V, ID= 2 A,

1

Forward Transductance
Input Capacitance 1225 1600 pF VGS= 0
Output Capacitance 200 350 pF VDS= 25 V
Reverse Transfer Capacitance 85 150 pF f = 1 MHz
Turn-On Delay Time 17 35 ns VDD= 200 V, ID@ 4 A
Rise Time 5 15 ns Rg= 5 W, RL= 49 W
Turn-Off Delay Time 42 90 ns
Fall Time 14 30 ns

Continuous Source Current - 2 A Modified MOSPOWER

Source Current

Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,

1

1

1

1

2.0 A VDS 2 V

4.0 4.8 S VDS 2 V

- 8 A the integral P-N

- 2 V TC= 25 C, IS= -9 A, VGS= 0

, I

= 250 mA

GS

D

, VGS= 10 V

DS(on)

TC= 100 C

, ID= 2 A

DS(on)

(MOSFET) switching times are
essentially independent of
operating temperature.

OM6413SP3 - OM6416SP3

2.1

OM6413SP3 - OM6416SP3

205 Crawford Street, Leominster, MA 01453 USA [phone] FAX [phone]

.100

.100
17 PLCS.

.300 MIN.

.400

.405

2.800

2.500

.810

.187 R
2 PLCS.

.075 R
2 PLCS.

.150

.150

.010

.060

.115

.240
MAX.

.450
MIN.

.018
18 PLCS.

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)

V

DS

V

DGR

ID@ TC= 25°C Continuous Drain Current ± 6 ± 4 ± 2.5 ± 2 A
I

DM

V

GS

PD@ TC= 25°C Maximum Power Dissipation 50 50 50 50 W
Junction To Case Linear Derating Factor 0.5 0.5 0.5 0.5 W/°C
Junction To Ambient Linear Derating Factor .020 .020 .020 .020 W/°C
T

J

T

stg

Lead Temperature (1/16" from case for 5 secs.) 225 225 225 225 °C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Pan Head Screw, Non-Lubricated Threads

THERMAL RESISTANCE

R

thJC

R

thJA

2.1

Parameter OM6413 OM6414 OM6415 OM6416 Units

Drain-Source Voltage 100 200 400 500 V
Drain-Gate Voltage (RGS= 1 M ) 100 200 400 500 V

Pulsed Drain Current

1

± 30 ± 25 ± 20 ± 15 A

Gate-Source Voltage ± 20 ± 20 ± 20 ± 20 V

Operating and
Storage Temperature Range -55 to 125 -55 to 125 -55 to 125 -55 to 125 °C

Junction-to-Case 2.00 °C/W
Junction-to-Ambient 50 °C/W Free Air Operation
Mounting Torque 3.0 LBF•IN

POWER RATING MECHANICAL OUTLINE

150

125

100

75

50

25

- POWER DISSIPATION (WATTS)

D

P

0

0 25 50 75 100 125 150 175

TC- CASE TEMPERATURE (°C)