Page 1
OM23P06ST
OM23P06SA
OM20P10ST
OM20P10SA
OM12P10ST
OM12P10SA
OM8P20ST
OM8P20SA
OM8P25ST
OM8P25SA
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE, P-CHANNEL
60V To 500V P-Channel MOSFET In A
Hermetic Package
OM2P50ST
OM2P50SA
FEATURES
D
• Isolated Hermetic Metal Package
• P-Channel
• Fast Switching, Low Drive Current
G
• Ease of Paralleling For Added Power
• Available Screened To MIL-S-19500, TX, TXV And S Level
• Ceramic Feedthroughs Available
S
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS (T
BASIC
PART NUMBER TO-257AA TO-254AA
OM23P06 60 .16 .12 23
OM20P10 100 .20 .16 20
OM12P10 100 .34 .30 12
OM8P20 200 .80 .75 8
OM8P25 250 2.08 2.00 8
OM2P50 500 6.10 6.00 2
VDS(V)
= 25°C unless otherwise noted.)
J
R
()
DS(on)
ID(A)
3.1
4 11 R0
PIN CONNECTION
TO-257AA TO-254AA
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
123
123
3.1 - 31
ORDERING INFORMATION
Example:
OM20P10
Basic Part Case Screening
Number Style Level
Case Style:
ST = TO-257AA
SA = TO-254AA
Standard Products are supplied with
glass feedthroughs. For ceramic
feedthroughs, add letter “C” to part
number: Example - OM20P10C
ST M
ST.
Page 2
3.1
G
D
S
G
D
S
OM23P06ST/SA - OM2P50ST/SA Series
3.1 - 32
ELECTRICAL CHARACTERISTICS: (T
STATIC P/N OM23P06ST/OM23P06SA (60V) STATIC P/N OM20P10ST/OM20P10SA (100V)
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
Parameter Min. Max. Units Test Conditions Parameter Min. Max. Units Test Conditions
BV
Drain-Source Breakdown
DSS
Voltage I
V
Gate-Threshold Voltage 2 4.5 V VDS= VGS, ID= 1.0 mA V
GS(th)
I
Gate-Body Leakage ± 100 nA VGS= ± 20 V I
GSS
I
Zero Gate Voltage Drain 0.1 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
V
Static Drain-Source
DS(on)
On-StateVoltage
R
Static Drain-Source .16
DS(on)
On-State Resistance
R
Static Drain-Source .32 VGS= 10 V, ID= 11.5 A, R
DS(on)
On-State Resistance
1
OM23P06ST
1
OM23P06SA
OM23P06ST
1
OM23P06SA
60 V
1.0 mA
3.5 V V
.12 On-State Resistance
.24 TC= 125 C On-State Resistance
DYNAMIC DYNAMIC
gfsForward Transductance
C
Input Capacitance 1700 pF VGS= 0 C
iss
C
Output Capacitance 900 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 400 pF f = 1 MHz C
rss
t
Turn-On Delay Time 30 ns t
d(on)
t
Rise Time 170 ns
r
Turn-Off Delay Time 140 ns
t
d(off)
Fall Time 120 ns t
t
f
1
5.0 S(W) VDS 2 V
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
= 10 V, ID= 23 A
GS
V
= 10 V, ID= 11.5 A
GS
(W)
V
DD
R
G
, ID= 11.5 A gfsForward Transductance
DS(on)
= 25 V, ID= 23 A
= 13 W
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2 4.5 V VDS= VGS, ID= 1.0 mA
GS(th)
Gate-Body Leakage ± 100 nA VGS= ± 20 V
GSS
Zero Gate Voltage Drain .01 mA VDS= Max. Rat., VGS= 0
DSS
100 V
.10 mA
Static Drain-Source
V
DS(on)
On-State Voltage
Static Drain-Source .20
R
DS(on)
Static Drain-Source .40 VGS= 10 V, ID= 10 A,
DS(on)
Input Capacitance 2000 pF VGS= 0
iss
Output Capacitance 950 pF VDS= 25 V
oss
Reverse Transfer Capacitance 400 pF f = 1 MHz
rss
Turn-On Delay Time 45 ns
d(on)
t
Rise Time 200 ns
r
t
Turn-Off Delay Time 150 ns
d(off)
Fall Time 150 ns
f
1
OM20P10ST
1
OM20P10SA
OM20P10ST
1
OM20P10SA
1
4.2 V V
.16
.32 TC= 125 C
5.0 S(W) VDS 2 V
VGS= 0,
VDS= Max. Rat., VGS= 0,
V
(W)
V
R
= 10 V, ID= 20 A
GS
= 10 V, ID= 10 A
GS
, ID= 10 A
DS(on)
= 25 V, ID= 10 A
DD
= 50 W
G
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
1
1
23 A
75 A
3.5 V
- 2.5 V VSDDiode Forward Voltage
200 ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
Modified MOSPOWER I
the integral P-N I
I
= 23 A, VGS= 0
S
IF= 23 A, t
dl
/ds = 100 A/ms
F
Continuous Source Current
S
Source Current
SM
V
Diode Forward Voltage
SD
Reverse Recovery Time
rr
20 A
1
1
1
80 A
4.0 V
- 2 V
475
Modified MOSPOWER
the integral P-N
I
= 20 A, VGS= 0
F
IF= 20 A,
ns
dlF/ds = 100 A/ms
Page 3
3.1 - 33
G
D
S
G
D
S
ELECTRICAL CHARACTERISTICS: (T
STATIC P/N OM12P10ST/OM12P10SA (100V) STATIC P/N OM8P20ST/OM8P20SA (200V)
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
Parameter Min. Max. Units Test Conditions Parameter Min. Max. Units Test Conditions
BV
Drain-Source Breakdown
DSS
Voltage I
V
Gate-Threshold Voltage 2 4.5 V VDS= VGS, ID= 1.0 mA V
GS(th)
I
Gate-Body Leakage ± 100 nA VGS= ± 20 V I
GSS
I
Zero Gate Voltage Drain .01 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
V
Static Drain-Source
DS(on)
On-StateVoltage
R
Static Drain-Source .34
DS(on)
On-State Resistance
R
Static Drain-Source .68 VGS= 10 V, ID= 6 A, R
DS(on)
On-State Resistance
1
OM12P10ST
1
OM12P10SA
OM12P10ST
1
OM12P10SA
100 V
.10 mA
4.2 V V
.30 On-State Resistance
.60 TC= 125 C On-State Resistance
DYNAMIC DYNAMIC
gfsForward Transductance
C
Input Capacitance 920 pF VGS= 0 C
iss
C
Output Capacitance 575 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 200 pF f = 1 MHz C
rss
t
Turn-On Delay Time 50 ns t
d(on)
t
Rise Time 150 ns
r
Turn-Off Delay Time 150 ns
t
d(off)
Fall Time 150 ns t
t
f
1
2.0 S(W) VDS 2 V
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
= 10 V, ID= 12 A
GS
V
= 10 V, ID= 6 A
GS
(W)
V
DD
R
G
, ID= 6 A gfsForward Transductance
DS(on)
= 25 V, ID= 6 A
= 50 W
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2 4.5 V VDS= VGS, ID= 1.0 mA
GS(th)
Gate-Body Leakage ± 100 nA VGS= ± 20 V
GSS
Zero Gate Voltage Drain .2 mA VDS= Max. Rat., VGS= 0
DSS
200 V
1.0 mA
Static Drain-Source
V
DS(on)
On-State Voltage
Static Drain-Source .80
R
DS(on)
Static Drain-Source 1.60 VGS= 10 V, ID= 4 A,
DS(on)
Input Capacitance 1600 pF VGS= 0
iss
Output Capacitance 400 pF VDS= 25 V
oss
Reverse Transfer Capacitance 120 pF f = 1 MHz
rss
Turn-On Delay Time 40 ns
d(on)
t
Rise Time 120 ns
r
t
Turn-Off Delay Time 100 ns
d(off)
Fall Time 80 ns
f
1
1
1
1
OM8P20ST
OM8P20SA
OM8P20ST
OM8P20SA
7.0 V V
.75
1.50 TC= 125 C
2.0 S(W) VDS 2 V
VGS= 0,
VDS= Max. Rat., VGS= 0,
V
(W)
V
R
= 10 V, ID= 8 A
GS
= 10 V, ID= 4 A
GS
, ID= 4 A
DS(on)
= 100 V, ID= 4 A
DD
= 50 W
G
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
1
1
12 A
28 A
5.5 V
- 2.5 V VSDDiode Forward Voltage
450 ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
Modified MOSPOWER I
the integral P-N I
I
= 12 A, VGS= 0
F
IF= 12 A, t
dl
/ds = 100 A/ms
F
Continuous Source Current
S
Source Current
SM
V
Diode Forward Voltage
SD
Reverse Recovery Time
rr
8A
1
1
1
30 A
3.0 V
- 2 V
475
Modified MOSPOWER
the integral P-N
I
= 8 A, VGS= 0
F
IF= 8 A,
ns
dlF/ds = 100 A/ms
OM23P06ST/SA - OM2P50ST/SA Series
3.1
Page 4
3.1
G
D
S
G
D
S
OM23P06ST/SA - OM2P50ST/SA Series
3.1 - 34
ELECTRICAL CHARACTERISTICS: (T
STATIC P/N OM8P25ST/OM8P25SA (250V) STATIC P/N OM2P50ST/OM2P50SA (500V)
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
Parameter Min. Max. Units Test Conditions Parameter Min. Max. Units Test Conditions
BV
Drain-Source Breakdown
DSS
Voltage I
V
Gate-Threshold Voltage 2 4.5 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage ± 100 nA VGS= ± 20 V I
GSS
I
Zero Gate Voltage Drain .20 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
V
Static Drain-Source
DS(on)
On-StateVoltage
R
Static Drain-Source 2.08
DS(on)
On-State Resistance
R
Static Drain-Source 4.16 VGS= 10 V, ID= 4 A, R
DS(on)
On-State Resistance
1
OM8P25ST
1
OM8P25SA
OM8P25ST
1
OM8P25SA
250 V
1.0 mA
18 V V
2.00 On-State Resistance
4.00 TC= 125 C On-State Resistance
DYNAMIC DYNAMIC
gfsForward Transductance
C
Input Capacitance 2200 pF VGS= 0 C
iss
C
Output Capacitance 500 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 300 pF f = 1 MHz C
rss
t
Turn-On Delay Time 40 ns t
d(on)
t
Rise Time 100 ns
r
Turn-Off Delay Time 160 ns
t
d(off)
Fall Time 90 ns t
t
f
1
3.0 S(W) VDS 2 V
VGS= 0, BV
= 250 mA Voltage ID= 5.0 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 100° C
C
= 10 V, ID= 8 A
GS
V
= 10 V, ID= 4 A
GS
(W)
V
DD
R
G
, ID= 4 A gfsForward Transductance
DS(on)
= 25 V, ID= 4 A
= 50 W
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2 4.5 V VDS= VGS, ID= 1.0 mA
GS(th)
Gate-Body Leakage ± 100 nA VGS= ± 20 V
GSS
Zero Gate Voltage Drain .25 mA VDS= 425 V, VGS= 0
DSS
500 V
2.5 mA
Static Drain-Source
V
DS(on)
On-State Voltage
Static Drain-Source 6.1
R
DS(on)
Static Drain-Source 12.2 VGS= 10 V, ID= 1.0 A,
DS(on)
Input Capacitance 100 pF VGS= 0
iss
Output Capacitance 200 pF VDS= 25 V
oss
Reverse Transfer Capacitance 80 pF f = 1 MHz
rss
Turn-On Delay Time 50 ns
d(on)
t
Rise Time 100 ns
r
t
Turn-Off Delay Time 150 ns
d(off)
Fall Time 50 ns
f
1
1
1
1
OM2P50ST
OM2P50SA
OM2P50ST
OM2P50SA
6.1 V V
6.0
12.0 TC= 125 C
.5 S(W ) VDS 2 V
VGS= 0,
VDS= 425 V, VGS= 0,
V
(W)
V
R
= 10 V, ID= 1.0 A
GS
= 10 V, ID= 1.0 A
GS
, ID= 1.0 A
DS(on)
= 125 V, ID= 1.0 A
DD
= 50 W
G
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode)
VSDDiode Forward Voltage
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
1
1
8A
24 A
5V
- 2.5 V VSDDiode Forward Voltage
400 ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
Modified MOSPOWER I
the integral P-N I
I
= 8 A, VGS= 0
F
IF= 8 A, t
dl
/ds = 100 A/ms
F
Continuous Source Current
S
Source Current
SM
V
Diode Forward Voltage
SD
Reverse Recovery Time
rr
2.0 A
1
1
1
8.0 A
1.8 V
- 2 V
125
Modified MOSPOWER
the integral P-N
Junction rectifier.
I
= 2.0 A, VGS= 0
S
IF= 2.0 A,
ns
dlF/ds = 100 A/ms
Page 5
OM23P06ST/SA - OM2P50ST/SA Series
SWITCHING TEST CIRCUIT SWITCHING WAVEFORMS
On-Region Characteristics
32
28
24
20
16
12
8
4
0
024
V
DS
, Drain-To-Source Characteristics (Volts)
I
D
, Drain Current (Amps)
6810
Gate-Threshold Variation
With Temperature
1.2
1.1
1
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125 150
0.5
0.4
0.3
0.2
0.1
0
0 4 8 12 16 20 24 28 32
T
J
, Junction Temperature (°C)
V
GS(th)
, Gate Threshold Voltage
(Normalized)
Transfer Characteristics
32
28
24
20
16
12
8
4
0
024
V
GS
, Gate-To-Source Voltage (Volts)
I
D
, Drain Current (Amps)
6810
Normalized Breakdown Voltage
verses Temperature
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T
J
, Junction Temperature (°C)
V
(BR)DSS
, Drain-To-Source
Breakdown Voltage (Normalized)
On-Resistance verses
Drain Current
ID, Drain Current (Amps)
R
DS(on)
, Drain-To-Source
Resistance (Normalized)
Normalized On-Resistance
verses Temperature
2
1.5
1
0.5
0
-50 0 50
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-To-Source
Resistance (Normalized)
100 150 200-25 25 75 125 175
TJ = 25°C
TJ = -55°C
TJ = 150°C
TJ = 25°C
VGS = 5V
VDS = V
GS
ID = 1mA
VDS = 0V
I
D
= 0.25mA
VGS = 10V
I
D
= 10A
6V
7V
8V
9V
10V
TJ = -55°C
TJ = 150°C
TJ = 25°C
R
gen
V
in
R
L
V
out
V
DD
DUT
50 Ω
50 Ω
z = 50 Ω
Pulse Generator
OUTPUT, V
out
INPUT, V
in
INVERTED
t
d(on)
t
d(off)
t
on
PULSE WIDTH
t
off
10%
90% 90%
90%
50%
50%
10%
t
r
t
f
TYPICAL ELECTRICAL CHARACTERISTICS, OM23P06
3.1
3.1 - 35
Page 6
OM23P06ST/SA - OM2P50ST/SA Series
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
DSG
FET 1
DSG
FET 3
DSG
FET 3
DSG
FET 4
DSG
FET 2
GSD
FET 1
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise noted)
C
Parameter OM23P06 OM20P10 OM12P10 OM8P20 OM8P25 OM2P50 Units
V
DS
V
DGR
I
D
I
DM
V
GS
P
D
R
JC
q
T
J
T
stg
Drain-Source Voltage 60 100 100 200 250 500 V
Drain-Gate Voltage (RGS= 1 M ) 60 100 100 200 250 500 V
Continuous Drain Current
Pulsed Drain Current
2
1,2
23 20 12 8 8 2 A
75 80 28 30 24 8 A
Gate-Source Voltage ±20 ±20 ±20 ±20 ±20 ±20 V
Maximum Power Dissipation 118 110 72 110 72 72 W
Junction-To-Case 1.32 1.1 1.76 1.1 1.76 1.76 °C/W
Operating and
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Linear Derating Factor .76 .91 .57 .91 .57 .57 W/°C
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations: TO-257AA, 15 Amps; TO-254AA, 25 Amps.
PACKAGE LIMITATIONS
Parameters TO-257AA TO-254AA Unit
I
D
Continuous Drain Current 15 25 A
Linear Derating Factor, Junction-to-Ambient .015 .020 W/°C
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation) 67 50 °C/W
MECHANICAL OUTLINE
3.1
TO-257AA TO-254AA
Note: MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
PACKAGE OPTIONS
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